公开(公告)号：US20100258912A1

公开(公告)日：2010-10-14

申请号：US12756063

申请日：2010-04-07

Applicant: Robert Beach ,  Guang Yuan Zhao

Inventor： Robert Beach ,  Guang Yuan Zhao

IPC: H01L29/20 ,  H01L21/20

CPC classification number: H01L21/02579 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7783

Abstract: A semi-conductor crystal and method of forming the same. The method includes providing a flow of dopant and column III element containing gases, then stopping flow of dopant and column III element containing gases, reducing the temperature, restarting flow of column III containing gases and then elevating the temperature.

Abstract translation: 半导体晶体及其形成方法。 该方法包括提供含有气体的掺杂剂和含有III族元素的气流，然后停止含掺杂剂和含有III族元素的气体的流动，降低温度，重新开始含有气体的第III族气体的流动，然后升高温度。

公开(公告)号：US20100258848A1

公开(公告)日：2010-10-14

申请号：US12756906

申请日：2010-04-08

Applicant: Alexander Lidow ,  Robert Beach ,  Jianjun Cao ,  Alana Nakata ,  Guang Yuan Zhao

Inventor： Alexander Lidow ,  Robert Beach ,  Jianjun Cao ,  Alana Nakata ,  Guang Yuan Zhao

IPC: H01L29/78 ,  H01L29/772

CPC classification number: H01L29/802 ,  H01L29/2003 ,  H01L29/66522

Abstract: A MISFET, such as a GaN transistor, with low gate leakage. In one embodiment, the gate leakage is reduced with a compensated GaN layer below the gate contact and above the barrier layer. In another embodiment, the gate leakage is reduced by employing a semi-insulating layer below the gate contact and above the barrier layer.

Abstract translation: 具有低栅极泄漏的MISFET，例如GaN晶体管。 在一个实施例中，栅极泄漏随着栅极接触下方的补偿GaN层和势垒层上方而减小。 在另一个实施例中，通过在栅极接触之下和阻挡层之上采用半绝缘层来减小栅极泄漏。

公开(公告)号：US20100258844A1

公开(公告)日：2010-10-14

申请号：US12756975

申请日：2010-04-08

Applicant: Alexander Lidow ,  Robert Beach ,  Alana Nakata ,  Jianjun Cao

Inventor： Alexander Lidow ,  Robert Beach ,  Alana Nakata ,  Jianjun Cao

IPC: H01L29/772 ,  H01L23/367 ,  H01L23/488

CPC classification number: H01L23/3192 ,  H01L23/3178 ,  H01L23/367 ,  H01L23/3672 ,  H01L24/13 ,  H01L24/16 ,  H01L29/0657 ,  H01L29/205 ,  H01L29/267 ,  H01L29/41725 ,  H01L29/7787 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2224/05599 ,  H01L2224/05099

Abstract: A semiconductor device comprising a silicon substrate, a compound semiconductor material, an insulating material between the silicon substrate and the compound semiconductor material, and a top surface comprising means of electrical connection, and passivation material, where the passivation material is silicon nitride, silicon dioxide, or a combination of both. The present invention eliminates the need for a thick electrical insulator between a heat sink and the back surface of a surface mounted device by the inclusion of an AlN seed layer to electrically isolate the silicon substrate of the device. The sidewalls of the device are also electrically isolated from the active area of the device.

Abstract translation: 一种半导体器件，包括硅衬底，化合物半导体材料，硅衬底和化合物半导体材料之间的绝缘材料，以及包括电连接装置的顶表面和钝化材料，其中钝化材料是氮化硅，二氧化硅 ，或两者的组合。 本发明通过包含AlN晶种层来电绝缘器件的硅衬底，消除了散热器与表面安装器件背面之间的厚电绝缘体的需要。 器件的侧壁也与器件的有源区域电隔离。

公开(公告)号：US07653033B2

公开(公告)日：2010-01-26

申请号：US10784588

申请日：2004-02-23

Applicant: Robert Beach ,  Heiner Schwede

Inventor： Robert Beach ,  Heiner Schwede

IPC: H04Q7/24 ,  H04L12/28

CPC classification number: H04W8/26 ,  H04L12/4625 ,  H04W52/0203 ,  H04W52/0216 ,  H04W84/12 ,  H04W88/08 ,  Y02D70/142

Abstract: A wireless data communications system includes simplified access points which are connected to ports of an intelligent switching hub. The switching hub relays data packets to the access points in accordance with destination address data in the data communications. In a preferred arrangement the access points are provided with power over the data cable from the switching hub location.

Abstract translation: 无线数据通信系统包括连接到智能交换集线器端口的简化接入点。 交换集线器根据数据通信中的目的地址数据将数据分组中继到接入点。 在优选的布置中，接入点通过数据电缆从交换集线器位置提供电力。

公开(公告)号：US07652311B2

公开(公告)日：2010-01-26

申请号：US11906823

申请日：2007-10-04

Applicant: Robert Beach

Inventor： Robert Beach

IPC: H01L29/739 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/06 ,  H01L29/22 ,  H01L33/00

CPC classification number: H01L29/7787 ,  H01L29/2003

Abstract: A III-nitride based field effect transistor obtains improved performance characteristics through manipulation of the relationship between the in-plane lattice constant of the interface of material layers. A high mobility two dimensional electron gas generated at the interface of the III-nitride materials permits high current conduction with low ON resistance, and is controllable through the manipulation of spontaneous polarization fields obtained according to the characteristics of the III-nitride material. The field effect transistor produced can be made to be a nominally on device where the in-plane lattice constants of the material forming the interface match. A nominally off device may be produced where one of the material layers has an in-plane lattice constant that is larger than that of the other layer material. The layer materials are preferably InAlGaN/GaN layers that are particularly tailored to the characteristics of the present invention.

Abstract translation: 基于III族氮化物的场效应晶体管通过处理材料层的界面的面内晶格常数之间的关系来获得改进的性能特性。 在III族氮化物材料的界面处产生的高迁移率二维电子气体允许具有低导通电阻的高电流传导，并且可以通过操纵根据III族氮化物材料的特性获得的自发极化场来控制。 所产生的场效应晶体管可以在名义上成为形成界面的材料的面内晶格常数匹配的器件上。 可以制造名义上关闭的装置，其中材料层之一的面内晶格常数大于其它层材料的面内晶格常数。 层材料优选是特别适合于本发明特征的InAlGaN / GaN层。

公开(公告)号：US20090065785A1

公开(公告)日：2009-03-12

申请号：US11899510

申请日：2007-09-06

Applicant: Robert Beach

Inventor： Robert Beach

IPC: H01L29/20 ,  H01L21/336 ,  H01L29/78

CPC classification number: H01L29/7813 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/66734

Abstract: A power semiconductor device that includes common conduction regions, charge compensation regions, each adjacent a respective common conduction region, and a stand off region over the common conduction regions and charge compensation regions.

Abstract translation: 一种功率半导体器件，其包括公共导电区域，电荷补偿区域，每个邻近相应的公共导电区域，以及在共同导电区域和电荷补偿区域上的支撑区域。

公开(公告)号：US07465997B2

公开(公告)日：2008-12-16

申请号：US11056062

申请日：2005-02-11

Applicant: Daniel M. Kinzer ,  Robert Beach

Inventor： Daniel M. Kinzer ,  Robert Beach

IPC: H01L27/088

CPC classification number: H01L29/7787 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42316

Abstract: A III-nitride bidirectional switch which includes an AlGaN/GaN interface that obtains a high current currying channel. The bidirectional switch operates with at least one gate that prevents or permits the establishment of a two dimensional electron gas to form the current carrying channel for the bidirectional switch.

Abstract translation: 一种III族氮化物双向开关，其包括获得高电流通道的AlGaN / GaN界面。 双向开关用至少一个栅极操作，该栅极防止或允许建立二维电子气体以形成用于双向开关的载流通道。

公开(公告)号：US20080296621A1

公开(公告)日：2008-12-04

申请号：US12154341

申请日：2008-05-22

Applicant: Paul Bridger ,  Robert Beach

Inventor： Paul Bridger ,  Robert Beach

IPC: H01L29/43

CPC classification number: H01L29/778 ,  H01L29/0692 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/7787

Abstract: A III-nitride heterojunction semiconductor device having a III-nitride heterojunction that includes a discontinuous two-dimensional electron gas under a gate thereof.

Abstract translation: 具有III族氮化物异质结的III族氮化物异质结半导体器件，其在栅极下方包括不连续的二维电子气。

公开(公告)号：US07440781B2

公开(公告)日：2008-10-21

申请号：US11245576

申请日：2005-10-07

Applicant: Robert Beach ,  Puneet Batta

Inventor： Robert Beach ,  Puneet Batta

IPC: H04B1/38

CPC classification number: H04W52/0225 ,  H04W52/0229 ,  Y02D70/142 ,  Y02D70/146 ,  Y02D70/166 ,  Y02D70/23

Abstract: Described is a system and method for power conservation in a wireless device. The method includes switching, by a wireless computing unit, from a first communication mode to a second communication mode at a predefined time interval. The unit receives wireless signals only when in the second communication mode, and the first communication mode is a power-save mode. The unit then receives a wireless signal, and initiates a wireless connection to a wireless arrangement to obtain traffic data from the wireless arrangement when the signal includes a traffic data indicator which is indicative of existence of the traffic data. The unit switches into the first communication mode when the indicator is absent from the signal.

Abstract translation: 描述了一种用于无线设备中的功率节省的系统和方法。 该方法包括以预定的时间间隔将无线计算单元从第一通信模式切换到第二通信模式。 该单元仅在处于第二通信模式时接收无线信号，并且第一通信模式是省电模式。 然后该单元接收无线信号，并且当信号包括表示业务数据的存在的业务数据指示符时，发起到无线装置的无线连接以从无线装置获得业务数据。 当指示灯不在信号中时，该单元切换到第一通信模式。

公开(公告)号：US07417267B2

公开(公告)日：2008-08-26

申请号：US11232646

申请日：2005-09-22

Applicant: Robert Beach

Inventor： Robert Beach

IPC: H01L31/00

CPC classification number: H01L29/7789 ,  H01L29/0657 ,  H01L29/0692 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

Abstract: A III-nitride power semiconductor device that includes a heterojunction body with a sloping portion, a first power electrode, a second power electrode and a gate over the sloping portion of the heterojunction to control the conduction of current between the first power electrode and the second power electrode of the HI-nitride power semiconductor device.

Abstract translation: 一种III族氮化物功率半导体器件，其包括具有倾斜部分的异质结体，第一电源电极，第二电源电极和位于异质结的倾斜部分上的栅极，以控制第一电力电极和第二电极之间的电流传导 HI氮化物功率半导体器件的电源电极。