公开(公告)号：US07550781B2

公开(公告)日：2009-06-23

申请号：US11056794

申请日：2005-02-11

Applicant: Daniel M. Kinzer ,  Robert Beach

Inventor： Daniel M. Kinzer ,  Robert Beach

IPC: H01L29/772

CPC classification number: H01L29/872 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/7786

Abstract: A III-nitride based integrated semiconductor device which includes at least two III-nitride based semiconductor devices formed in a common die.

Abstract translation: 一种III族氮化物基集成半导体器件，其包括形成在共用管芯中的至少两个III族氮化物基半导体器件。

公开(公告)号：US07288803B2

公开(公告)日：2007-10-30

申请号：US11240017

申请日：2005-09-30

Applicant: Robert Beach ,  Paul Bridger ,  Daniel M. Kinzer

Inventor： Robert Beach ,  Paul Bridger ,  Daniel M. Kinzer

IPC: H01L31/00

CPC classification number: H01L29/41758 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A III-nitride power semiconductor device that includes a current sense electrode.

Abstract translation: 一种III族氮化物功率半导体器件，其包括电流检测电极。

公开(公告)号：US07465997B2

公开(公告)日：2008-12-16

申请号：US11056062

申请日：2005-02-11

Applicant: Daniel M. Kinzer ,  Robert Beach

Inventor： Daniel M. Kinzer ,  Robert Beach

IPC: H01L27/088

CPC classification number: H01L29/7787 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42316

Abstract: A III-nitride bidirectional switch which includes an AlGaN/GaN interface that obtains a high current currying channel. The bidirectional switch operates with at least one gate that prevents or permits the establishment of a two dimensional electron gas to form the current carrying channel for the bidirectional switch.

Abstract translation: 一种III族氮化物双向开关，其包括获得高电流通道的AlGaN / GaN界面。 双向开关用至少一个栅极操作，该栅极防止或允许建立二维电子气体以形成用于双向开关的载流通道。

公开(公告)号：US08853749B2

公开(公告)日：2014-10-07

申请号：US13362669

申请日：2012-01-31

Applicant: Alexander Lidow ,  Jianjun Cao ,  Robert Beach ,  Robert Strittmatter ,  Guang Y. Zhao ,  Alana Nakata

Inventor： Alexander Lidow ,  Jianjun Cao ,  Robert Beach ,  Robert Strittmatter ,  Guang Y. Zhao ,  Alana Nakata

IPC: H01L29/76 ,  H01L21/336 ,  H01L29/423 ,  H01L29/778 ,  H01L29/66 ,  H01L21/265 ,  H01L29/20

CPC classification number: H01L21/26586 ,  H01L21/26546 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

Abstract: A self-aligned transistor gate structure that includes an ion-implanted portion of gate material surrounded by non-implanted gate material on each side. The gate structure may be formed, for example, by applying a layer of GaN material over an AlGaN barrier layer and implanting a portion of the GaN layer to create the gate structure that is laterally surrounded by the GaN layer.

Abstract translation: 一种自对准的晶体管栅极结构，其包括在每侧由非植入栅极材料包围的栅极材料的离子注入部分。 栅极结构可以例如通过在AlGaN阻挡层上施加GaN材料层并且注入GaN层的一部分以形成由GaN层横向包围的栅极结构来形成。

公开(公告)号：US08699474B2

公开(公告)日：2014-04-15

申请号：US11622161

申请日：2007-01-11

Applicant: Robert Beach

Inventor： Robert Beach

IPC: H04W4/00 ,  H04W84/12

CPC classification number: H04W84/12 ,  H04L12/4625 ,  H04L29/04 ,  H04L69/08 ,  H04L69/18 ,  H04W12/02 ,  H04W16/26 ,  H04W60/00 ,  H04W74/00 ,  H04W88/08 ,  H04W88/085 ,  H04W88/12

Abstract: A wireless local area network is provided with simplified RF ports which are configured to provide lower level media access control functions. Higher level media access control functions and management functions are provided with a system having a cell controller, which may service one or more RF ports. Mobile units can also be configured with the higher level media access control functions being performed in a host processor.

Abstract translation: 无线局域网提供有简化的RF端口，其被配置为提供较低级媒体访问控制功能。 具有高级媒体访问控制功能和管理功能的系统具有可以服务于一个或多个RF端口的小区控制器的系统。 移动单元还可以配置在主处理器中执行的更高级媒体访问控制功能。

公开(公告)号：US08697581B2

公开(公告)日：2014-04-15

申请号：US12217830

申请日：2008-07-09

Applicant: Robert Beach ,  Paul Bridger

Inventor： Robert Beach ,  Paul Bridger

IPC: H01L21/302

CPC classification number: H01L29/7813 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66734 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/7835

Abstract: A III-nitride trench device has a vertical conduction region with an interrupted conduction channel when the device is not on, providing an enhancement mode device. The trench structure may be used in a vertical conduction or horizontal conduction device. A gate dielectric provides improved performance for the device by being capable of withstanding higher electric field or manipulating the charge in the conduction channel. A passivation of the III-nitride material decouples the dielectric from the device to permit lower dielectric constant materials to be used in high power applications.

Abstract translation: III型氮化物沟槽器件在器件未导通时具有具有中断的导通通道的垂直导电区域，提供增强型器件。 沟槽结构可以用在垂直传导或水平传导装置中。 门电介质通过能够承受更高的电场或操纵传导通道中的电荷而为器件提供改进的性能。 III族氮化物材料的钝化将电介质与器件分离，以允许较低的介电常数材料用于高功率应用。

公开(公告)号：US20130240963A1

公开(公告)日：2013-09-19

申请号：US13421963

申请日：2012-03-16

Applicant: Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Witold Kula ,  Po-Kang Wang

Inventor： Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Witold Kula ,  Po-Kang Wang

IPC: H01L29/82 ,  H01L21/8239

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

Abstract: An STT MTJ cell is formed with a magnetic anisotropy of its free and reference layers that is perpendicular to their planes of formation. The reference layer of the cell is an SAF multilayered structure with a single magnetic domain to enhance the bi-stability of the magnetoresistive states of the cell. The free layer of the cell is etched back laterally from the reference layer, so that the fringing stray field of the reference layer is no more than 15% of the coercivity of the free layer and has minimal effect on the free layer.

Abstract translation: 形成具有垂直于其形成平面的游离和参考层的磁各向异性的STT MTJ电池。 单元的参考层是具有单个磁畴的SAF多层结构，以增强单元的磁阻状态的双稳定性。 电池的自由层从参考层横向回蚀刻，使得参考层的边缘杂散场不超过自由层的矫顽力的15％，并且对自由层的影响最小。

公开(公告)号：US08441030B2

公开(公告)日：2013-05-14

申请号：US11238206

申请日：2005-09-29

Applicant: Robert Beach

Inventor： Robert Beach

IPC: H01L29/66 ,  H01L29/74

CPC classification number: H01L29/7786 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/872

Abstract: A III-nitride power semiconductor device that includes a plurality of III-nitride heterojunctions.

Abstract translation: 一种III族氮化物功率半导体器件，其包括多个III族氮化物异质结。

公开(公告)号：US08416735B2

公开(公告)日：2013-04-09

申请号：US10649207

申请日：2003-08-27

Applicant: Robert Beach

Inventor： Robert Beach

IPC: H04W4/00

CPC classification number: H04W88/06 ,  H04W4/18 ,  H04W52/288 ,  H04W84/10 ,  H04W84/12 ,  H04W88/04 ,  H04W92/10

Abstract: A system is provided with mobile units that are arranged to conduct wireless data communications with access points following a first protocol, such as IEEE standard 802.11. The mobile units are further arranged for modified protocol communications with peripheral devices that permanently associate with a mobile unit.

Abstract translation: 为系统提供移动单元，移动单元被安排为按照诸如IEEE标准802.11之类的第一协议进行与接入点的无线数据通信。 移动单元还被布置成用于与与移动单元永久关联的外围设备的修改的协议通信。

公开(公告)号：US08350294B2

公开(公告)日：2013-01-08

申请号：US12756906

申请日：2010-04-08

Applicant: Alexander Lidow ,  Robert Beach ,  Jianjun Cao ,  Alana Nakata ,  Guang Yuan Zhao

Inventor： Alexander Lidow ,  Robert Beach ,  Jianjun Cao ,  Alana Nakata ,  Guang Yuan Zhao

IPC: H01L29/66

CPC classification number: H01L29/802 ,  H01L29/2003 ,  H01L29/66522

Abstract: A MISFET, such as a GaN transistor, with low gate leakage. In one embodiment, the gate leakage is reduced with a compensated GaN layer below the gate contact and above the barrier layer. In another embodiment, the gate leakage is reduced by employing a semi-insulating layer below the gate contact and above the barrier layer.

Abstract translation: 具有低栅极泄漏的MISFET，例如GaN晶体管。 在一个实施例中，栅极泄漏随着栅极接触下方的补偿GaN层和势垒层上方而减小。 在另一个实施例中，通过在栅极接触之下和阻挡层之上采用半绝缘层来减小栅极泄漏。