Invention Grant
US07417267B2 Non-planar III-nitride power device having a lateral conduction path
有权
具有横向导电路径的非平面III族氮化物功率器件
- Patent Title: Non-planar III-nitride power device having a lateral conduction path
- Patent Title (中): 具有横向导电路径的非平面III族氮化物功率器件
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Application No.: US11232646Application Date: 2005-09-22
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Publication No.: US07417267B2Publication Date: 2008-08-26
- Inventor: Robert Beach
- Applicant: Robert Beach
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Ostrolenk, Faber, Gerb & Soffen, LLP
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
A III-nitride power semiconductor device that includes a heterojunction body with a sloping portion, a first power electrode, a second power electrode and a gate over the sloping portion of the heterojunction to control the conduction of current between the first power electrode and the second power electrode of the HI-nitride power semiconductor device.
Public/Granted literature
- US20060065912A1 Non-planar III-nitride power device having a lateral conduction path Public/Granted day:2006-03-30
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