Photocathode including silicon substrate with boron layer

    公开(公告)号:US11081310B2

    公开(公告)日:2021-08-03

    申请号:US16177144

    申请日:2018-10-31

    Abstract: A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

    Dual-column-parallel CCD sensor and inspection systems using a sensor

    公开(公告)号:US10313622B2

    公开(公告)日:2019-06-04

    申请号:US15337604

    申请日:2016-10-28

    Abstract: A dual-column-parallel image CCD sensor utilizes a dual-column-parallel readout circuit including two pairs of cross-connected transfer gates to alternately transfer pixel data (charges) from a pair of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the two adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at twice the line clock rate to pass the image charges to the shared output circuit. A symmetrical Y-shaped diffusion is utilized in one embodiment to merge the image charges from the two pixel columns. A method of driving the dual-column-parallel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the dual-column-parallel CCD sensor is also described.

    183 nm CW Laser and Inspection System
    74.
    发明申请

    公开(公告)号:US20190107766A1

    公开(公告)日:2019-04-11

    申请号:US16205032

    申请日:2018-11-29

    Abstract: A laser assembly generates continuous wave (CW) laser output light in the range of approximately 181 nm to approximately 185 nm by generating fourth harmonic light from first fundamental CW light having a first fundamental wavelength between 1 μm and 1.1 μm, generating fifth harmonic light by mixing the fourth harmonic light with the first fundamental CW light, and then mixing the fifth harmonic light with second fundamental or signal CW light having a second wavelength between 1.26 μm and 1.82 μm. The fifth harmonic light is generated using an external cavity that circulates first fundamental CW light through a first nonlinear crystal, and by directing the fourth harmonic light through the first nonlinear crystal. The laser output light is generated using a second cavity that passes circulated second fundamental or signal CW light through a second nonlinear crystal, and directing the fifth harmonic light through the second nonlinear crystal.

    Photocathode including silicon substrate with boron layer

    公开(公告)号:US10199197B2

    公开(公告)日:2019-02-05

    申请号:US15353980

    申请日:2016-11-17

    Abstract: A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

    Scanning Electron Microscope And Methods Of Inspecting And Reviewing Samples

    公开(公告)号:US20170329025A1

    公开(公告)日:2017-11-16

    申请号:US15667500

    申请日:2017-08-02

    Abstract: A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such as unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

    Inspection System Using 193nm Laser
    79.
    发明申请
    Inspection System Using 193nm Laser 审中-公开
    193nm激光检测系统

    公开(公告)号:US20160365693A1

    公开(公告)日:2016-12-15

    申请号:US15249096

    申请日:2016-08-26

    Abstract: Improved inspection systems utilize laser systems and associated techniques to generate an ultra-violet (UV) wavelength of approximately 193.368 nm from a fundamental vacuum wavelength near 1063.5 nm. Preferred embodiments separate out an unconsumed portion of an input wavelength to at least one stage and redirect that unconsumed portion for use in another stage. The improved laser systems and associated techniques result in less expensive, longer life lasers than those currently being used in the industry. These laser systems can be constructed with readily-available, relatively inexpensive components.

    Abstract translation: 改进的检查系统利用激光系统和相关技术从1063.5nm附近的基本真空波长产生约193.368nm的紫外(UV)波长。 优选实施例将输入波长的未消耗的部分分离成至少一个级,并将该未消耗的部分重定向以用于另一级。 改进的激光系统和相关技术导致比当前在工业中使用的激光器更便宜,更长寿命的激光器。 这些激光系统可以由容易获得的相对便宜的部件构成。

    High resolution high quantum efficiency electron bombarded CCD or CMOS imaging sensor
    80.
    发明授权
    High resolution high quantum efficiency electron bombarded CCD or CMOS imaging sensor 有权
    高分辨率高量子效率电子轰击CCD或CMOS成像传感器

    公开(公告)号:US09460886B2

    公开(公告)日:2016-10-04

    申请号:US14614088

    申请日:2015-02-04

    CPC classification number: H01J31/26 G01N21/88 H01J29/46

    Abstract: An electron-bombarded detector for detecting low light signals includes a vacuum tube structure defining a cylindrical vacuum tube chamber, a photocathode disposed at a first end of the vacuum tube chamber, a sensor disposed at a second end of the vacuum tube chamber, ring electrodes disposed in the vacuum tube chamber for generating an electric field that accelerates emitted photoelectrons toward the sensor, and a magnetic field generator configured to generate a symmetric magnetic field that applies a focusing lens effect on the photoelectrons. The ring electrodes and magnetic field generator are operating using one of a reduced distance focusing approach and an acceleration/deceleration approach such that the photoelectrons have a landing energy below 2 keV. The use of reflective mode photocathodes is enabled using either multi-pole deflector coils, or ring electrodes formed by segmented circular electrode structures. Large angle deflections are achieved using magnetic or electrostatic deflectors.

    Abstract translation: 用于检测低光信号的电子轰击检测器包括限定圆柱形真空管室的真空管结构,设置在真空管室的第一端的光电阴极,设置在真空管室的第二端的传感器,环形电极 设置在真空管室中,用于产生将发射的光电子朝向传感器加速的电场;以及磁场发生器,被配置为产生对光电子产生聚焦透镜效应的对称磁场。 环形电极和磁场发生器使用减小的距离聚焦方法和加速/减速方法之一进行操作,使得光电子具有低于2keV的着陆能量。 使用反射模式光电阴极可以使用多极偏转线圈或由分段圆形电极结构形成的环形电极。 使用磁性或静电偏转器实现大角度偏转。

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