Abstract:
A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.
Abstract:
A dual-column-parallel image CCD sensor utilizes a dual-column-parallel readout circuit including two pairs of cross-connected transfer gates to alternately transfer pixel data (charges) from a pair of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the two adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at twice the line clock rate to pass the image charges to the shared output circuit. A symmetrical Y-shaped diffusion is utilized in one embodiment to merge the image charges from the two pixel columns. A method of driving the dual-column-parallel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the dual-column-parallel CCD sensor is also described.
Abstract:
A dual-column-parallel image CCD sensor utilizes a dual-column-parallel readout circuit including two pairs of cross-connected transfer gates to alternately transfer pixel data (charges) from a pair of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the two adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at twice the line clock rate to pass the image charges to the shared output circuit. A symmetrical Y-shaped diffusion is utilized in one embodiment to merge the image charges from the two pixel columns. A method of driving the dual-column-parallel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the dual-column-parallel CCD sensor is also described.
Abstract:
A laser assembly generates continuous wave (CW) laser output light in the range of approximately 181 nm to approximately 185 nm by generating fourth harmonic light from first fundamental CW light having a first fundamental wavelength between 1 μm and 1.1 μm, generating fifth harmonic light by mixing the fourth harmonic light with the first fundamental CW light, and then mixing the fifth harmonic light with second fundamental or signal CW light having a second wavelength between 1.26 μm and 1.82 μm. The fifth harmonic light is generated using an external cavity that circulates first fundamental CW light through a first nonlinear crystal, and by directing the fourth harmonic light through the first nonlinear crystal. The laser output light is generated using a second cavity that passes circulated second fundamental or signal CW light through a second nonlinear crystal, and directing the fifth harmonic light through the second nonlinear crystal.
Abstract:
A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.
Abstract:
A laser assembly for generating laser output light at an output wavelength of approximately 183 nm includes a fundamental laser, an optical parametric system (OPS), a fifth harmonic generator, and a frequency mixing module. The fundamental laser generates fundamental light at a fundamental frequency. The OPS generates a down-converted signal at a down-converted frequency. The fifth harmonic generator generates a fifth harmonic of the fundamental light. The frequency mixing module mixes the down-converted signal and the fifth harmonic to produce the laser output light at a frequency equal to a sum of the fifth harmonic frequency and the down-converted frequency. The OPS generates the down-converted signal by generating a down-converted seed signal at the down-converted frequency, and then mixing the down-converted seed signal with a portion of the fundamental light. At least one of the frequency mixing, frequency conversion or harmonic generation utilizes an annealed, deuterium-treated or hydrogen-treated CLBO crystal.
Abstract:
A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such as unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.
Abstract:
A system for inspecting a sample including a detector, either a photomultiplier tube or an electron-bombarded image sensor, that is positioned to receive light from the sample. The detector includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. The semiconductor photocathode includes silicon, and further includes a pure boron coating on at least one surface.
Abstract:
Improved inspection systems utilize laser systems and associated techniques to generate an ultra-violet (UV) wavelength of approximately 193.368 nm from a fundamental vacuum wavelength near 1063.5 nm. Preferred embodiments separate out an unconsumed portion of an input wavelength to at least one stage and redirect that unconsumed portion for use in another stage. The improved laser systems and associated techniques result in less expensive, longer life lasers than those currently being used in the industry. These laser systems can be constructed with readily-available, relatively inexpensive components.
Abstract:
An electron-bombarded detector for detecting low light signals includes a vacuum tube structure defining a cylindrical vacuum tube chamber, a photocathode disposed at a first end of the vacuum tube chamber, a sensor disposed at a second end of the vacuum tube chamber, ring electrodes disposed in the vacuum tube chamber for generating an electric field that accelerates emitted photoelectrons toward the sensor, and a magnetic field generator configured to generate a symmetric magnetic field that applies a focusing lens effect on the photoelectrons. The ring electrodes and magnetic field generator are operating using one of a reduced distance focusing approach and an acceleration/deceleration approach such that the photoelectrons have a landing energy below 2 keV. The use of reflective mode photocathodes is enabled using either multi-pole deflector coils, or ring electrodes formed by segmented circular electrode structures. Large angle deflections are achieved using magnetic or electrostatic deflectors.