TECHNIQUES FOR CONTROLLING A CHARGED PARTICLE BEAM
    73.
    发明申请
    TECHNIQUES FOR CONTROLLING A CHARGED PARTICLE BEAM 有权
    用于控制充电颗粒光束的技术

    公开(公告)号:US20090072163A1

    公开(公告)日:2009-03-19

    申请号:US11854852

    申请日:2007-09-13

    IPC分类号: G21K5/04

    摘要: Techniques for controlling a charged particle beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle acceleration/deceleration system. The charged particle acceleration/deceleration system may comprise an acceleration column. The acceleration column may comprise a plurality of electrodes having apertures through which a charged particle beam may pass. The charged particle acceleration/deceleration system may also comprise a plurality of resistors electrically coupled to the plurality of electrodes. The charged particle acceleration/deceleration system may further comprise a plurality of switches electrically coupled to the plurality of electrodes and the plurality of resistors, each of the plurality of switches may be configured to be selectively switched respectively in a plurality of operation modes.

    摘要翻译: 公开了用于控制带电粒子束的技术。 在一个特定的示例性实施例中,这些技术可以被实现为带电粒子加速/减速系统。 带电粒子加速/减速系统可以包括加速度列。 加速柱可以包括具有孔的多个电极,带电粒子束可以通过该孔。 带电粒子加速/减速系统还可包括电耦合到多个电极的多个电阻器。 带电粒子加速/减速系统还可以包括电耦合到多个电极和多个电阻器的多个开关,多个开关中的每一个可被配置为分别以多种操作模式选择性地切换。

    Ion beam contamination determination
    74.
    发明授权
    Ion beam contamination determination 有权
    离子束污染测定

    公开(公告)号:US07402820B2

    公开(公告)日:2008-07-22

    申请号:US11289885

    申请日:2005-11-30

    IPC分类号: H01L21/425 H01J37/317

    摘要: A system, method and program product for determining contamination of an ion beam are disclosed. In the event of an isobaric interference, or near isobaric interference between a contaminant ion and an expected ion of an ion beam, which is difficult to detect, it is possible to measure a third ion in the ion beam and estimate, based on the amount of the third ion measured, a relative amount of the contaminant ion compared to the expected ion. The estimated relative amount of the contaminant ion is used together with a measured mass resolution of the ion implantation system to determine whether an ion implantation process needs to be suspended.

    摘要翻译: 公开了一种用于确定离子束污染的系统,方法和程序产品。 在难以检测的等离子体干扰或离子束的预期离子之间的等压干扰或接近等压干扰的情况下,可以测量离子束中的第三离子并基于量 测量的第三离子,与预期离子相比的污染物离子的相对量。 污染物离子的估计相对量与离子注入系统的测量质量分辨率一起使用以确定离子注入过程是否需要暂停。

    TECHNIQUES FOR PROVIDING A RIBBON-SHAPED GAS CLUSTER ION BEAM
    76.
    发明申请
    TECHNIQUES FOR PROVIDING A RIBBON-SHAPED GAS CLUSTER ION BEAM 有权
    提供RIBBON型气体聚集体离子束的技术

    公开(公告)号:US20080149826A1

    公开(公告)日:2008-06-26

    申请号:US11615290

    申请日:2006-12-22

    IPC分类号: H01J27/02 H01J27/08

    摘要: Techniques for providing a ribbon-shaped gas cluster ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for providing a ribbon-shaped gas cluster ion beam. The apparatus may comprise at least one nozzle configured to inject a source gas at a sufficient speed into a low-pressure vacuum space to form gas clusters. The apparatus may also comprise at least one ionizer that causes at least a portion of the gas clusters to be ionized. The apparatus may further comprise a beam-shaping mechanism that forms a ribbon-shaped gas cluster ion beam based on the ionized gas clusters.

    摘要翻译: 公开了提供带状气体簇离子束的技术。 在一个特定的示例性实施例中,可以将技术实现为用于提供带状气体簇离子束的装置。 该装置可以包括至少一个喷嘴,其构造成以足够的速度将源气体注入到低压真空空间中以形成气体团。 该装置还可以包括使至少一部分气体簇被离子化的至少一个离子发生器。 该装置还可以包括基于离子化气体簇形成带状气体团簇离子束的束形成机构。

    Technique for isocentric ion beam scanning
    77.
    发明授权
    Technique for isocentric ion beam scanning 有权
    等中心离子束扫描技术

    公开(公告)号:US07391038B2

    公开(公告)日:2008-06-24

    申请号:US11385634

    申请日:2006-03-21

    IPC分类号: H01J37/317 H01J37/08 A61N5/00

    摘要: A technique for isocentric ion beam scanning is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for isocentric ion beam scanning. The apparatus may comprise an end station having a mechanism for holding and translating a wafer. The apparatus may also comprise a deflector that tilts an ion beam to a predetermined angle and directs the ion beam into the end station. The wafer may be translated with respect to the ion beam for isocentric scanning at least a portion of a surface of the wafer, and wherein the ion beam is maintained at the predetermined angle during isocentric scanning.

    摘要翻译: 公开了一种等中心离子束扫描技术。 在一个特定的示例性实施例中,该技术可以由用于等中心离子束扫描的装置来实现。 该装置可以包括具有用于保持和平移晶片的机构的终端站。 该装置还可以包括将离子束倾斜到预定角度并将离子束引导到终端站的偏转器。 晶片可以相对于离子束平移,用于等中心扫描晶片的表面的至少一部分,并且其中离子束在等中心扫描期间保持在预定角度。

    Technique for providing a segmented electrostatic lens in an ion implanter
    78.
    发明授权
    Technique for providing a segmented electrostatic lens in an ion implanter 有权
    在离子注入机中提供分段静电透镜的技术

    公开(公告)号:US07339179B2

    公开(公告)日:2008-03-04

    申请号:US11413570

    申请日:2006-04-28

    IPC分类号: H01J37/10

    CPC分类号: H01J37/12 H01J37/3171

    摘要: A technique for providing a segmented electrostatic lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as an electrostatic lens for use in an ion implanter. The lens may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the electrostatic lens through the entrance electrode. The lens may also comprise an exit electrode biased at a second voltage potential, wherein the ion beam exits the electrostatic lens through the exit electrode. The lens may further comprise a suppression electrode located between the entrance electrode and the exit electrode, the suppression electrode comprising a plurality of segments that are independently biased to manipulate an energy and a shape of the ion beam.

    摘要翻译: 公开了一种在离子注入机中提供分段静电透镜的技术。 在一个特定的示例性实施例中,该技术可以被实现为用于离子注入机的静电透镜。 透镜可以包括偏置在第一电压电位的入口电极,其中离子束通过入口电极进入静电透镜。 透镜还可以包括偏压在第二电压电位的出射电极,其中离子束通过出射电极离开静电透镜。 透镜还可以包括位于入射电极和出射电极之间的抑制电极,所述抑制电极包括多个段,所述多个段被独立地偏置以操纵离子束的能量和形状。

    Methods of implanting ions and ion sources used for same
    79.
    发明申请
    Methods of implanting ions and ion sources used for same 审中-公开
    植入离子和离子源的方法

    公开(公告)号:US20070178678A1

    公开(公告)日:2007-08-02

    申请号:US11342183

    申请日:2006-01-28

    IPC分类号: H01L21/26

    摘要: Methods of ion implantation and ion sources used for the same are provided. The methods involve generating ions from a source feed gas that comprises multiple elements. For example, the source feed gas may comprise boron and at least two other elements (e.g., XaBbYc). The use of such source feed gases can lead to a number of advantages over certain conventional processes including enabling use of higher implant energies and beam currents when forming implanted regions having ultra-shallow junction depths. Also, in certain embodiments, the composition of the source feed gas may be selected to be thermally stable at relatively high temperatures (e.g., greater than 350° C.) which allows use of such gases in many conventional ion sources (e.g., indirectly heated cathode (IHC), Bernas) which generate such temperatures during use.

    摘要翻译: 提供了用于其的离子注入和离子源的方法。 该方法涉及从包含多个元素的源馈送气体产生离子。 例如,源原料气体可以包含硼和至少两个其它元素(例如,X a,B B,B和C)。 使用这种源进料气体可以产生比某些常规方法多的优点,包括当形成具有超浅结深度的注入区域时能够使用更高的注入能量和束流。 此外,在某些实施方案中,源进料气体的组成可以选择为在相对较高的温度(例如,大于350℃)下是热稳定的,其允许在许多常规离子源中使用这种气体(例如,间接加热 阴极(IHC),伯纳斯)在使用过程中产生这种温度。

    Ion beam neutral detection
    80.
    发明授权
    Ion beam neutral detection 有权
    离子束中性检测

    公开(公告)号:US07250617B2

    公开(公告)日:2007-07-31

    申请号:US11056445

    申请日:2005-02-11

    IPC分类号: H01J37/08

    摘要: An ion beam neutral detector system, an ion implanter system including the detector system and a method of detecting ion beam neutrals that ensures an ion implant is meeting contamination requirements are disclosed. The detector includes an energy contamination monitor positioned with in an ion implanter system. A method of the invention includes implanting the workpiece using an ion beam, and periodically detecting ion beam neutrals in the ion beam such that adjustments to the ion implanter system can be made for optimization.

    摘要翻译: 公开了一种离子束中性检测器系统,包括检测器系统的离子注入机系统和检测离子束中性物质的方法,其确保离子注入满足污染要求。 检测器包括一个位于离子注入机系统中的能量污染监测器。 本发明的方法包括使用离子束注入工件,并周期性地检测离子束中的离子束中性粒子,使得可以对离子注入机系统进行优化调整。