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    Technique for providing a segmented electrostatic lens in an ion implanter
    4.
    发明授权
    Technique for providing a segmented electrostatic lens in an ion implanter 有权
    在离子注入机中提供分段静电透镜的技术

    公开(公告)号：US07339179B2

    公开(公告)日：2008-03-04

    申请号：US11413570

    申请日：2006-04-28

    申请人： Svetlana B. Radovanov ,  Anthony Renau ,  James Steve Buff

    发明人： Svetlana B. Radovanov ,  Anthony Renau ,  James Steve Buff

    IPC分类号： H01J37/10

    CPC分类号： H01J37/12 ,  H01J37/3171

    摘要： A technique for providing a segmented electrostatic lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as an electrostatic lens for use in an ion implanter. The lens may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the electrostatic lens through the entrance electrode. The lens may also comprise an exit electrode biased at a second voltage potential, wherein the ion beam exits the electrostatic lens through the exit electrode. The lens may further comprise a suppression electrode located between the entrance electrode and the exit electrode, the suppression electrode comprising a plurality of segments that are independently biased to manipulate an energy and a shape of the ion beam.

    摘要翻译： 公开了一种在离子注入机中提供分段静电透镜的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于离子注入机的静电透镜。 透镜可以包括偏置在第一电压电位的入口电极，其中离子束通过入口电极进入静电透镜。 透镜还可以包括偏压在第二电压电位的出射电极，其中离子束通过出射电极离开静电透镜。 透镜还可以包括位于入射电极和出射电极之间的抑制电极，所述抑制电极包括多个段，所述多个段被独立地偏置以操纵离子束的能量和形状。

    Plasma processing apparatus
    5.
    发明授权
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号：US08664098B2

    公开(公告)日：2014-03-04

    申请号：US13353993

    申请日：2012-01-19

    申请人： Ludovic Godet ,  Timothy J. Miller ,  Svetlana B. Radovanov ,  Anthony Renau ,  Vikram Singh

    发明人： Ludovic Godet ,  Timothy J. Miller ,  Svetlana B. Radovanov ,  Anthony Renau ,  Vikram Singh

    IPC分类号： H01L21/26 ,  C23F1/00 ,  C23C16/00 ,  H01L21/3065

    CPC分类号： H01J37/32623 ,  C23C14/48

    摘要： A plasma processing apparatus includes a process chamber, a platen for supporting a workpiece, a source configured to generate a plasma in the process chamber, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.

    摘要翻译： 等离子体处理装置包括处理室，用于支撑工件的压板，被配置为在处理室中产生等离子体的源和绝缘改性剂。 绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。 间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。 另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角 到工件。

    Plasma Potential Modulated ION Implantation Apparatus
    6.
    发明申请
    Plasma Potential Modulated ION Implantation Apparatus 审中-公开
    等离子体电位调制离子注入装置

    公开(公告)号：US20130287963A1

    公开(公告)日：2013-10-31

    申请号：US13457455

    申请日：2012-04-26

    申请人： Svetlana B. Radovanov ,  Ludovic Godet ,  Bon-Woong Koo ,  Timothy J. Miller

    发明人： Svetlana B. Radovanov ,  Ludovic Godet ,  Bon-Woong Koo ,  Timothy J. Miller

    IPC分类号： C23C14/48

    CPC分类号： C23C14/48 ,  H01J37/32357 ,  H01J37/32412

    摘要： An ion implantation apparatus including a first plasma chamber, a second plasma chamber and an extraction electrode disposed therebetween. The first and second plasma chambers configured to house respective plasmas in response to the introduction of a different feed gases therein. The extraction electrode is electrically isolated from the plasma chamber. An extraction voltage is applied to the first plasma chamber above a bias potential used to generate the plasma therein. The extraction voltage drives the plasma potential to accelerate the ions in the first plasma to a desired implant energy. The accelerated ions pass through an aperture in the extraction electrode and are directed toward a substrate housed within the second plasma chamber for implantation.

    摘要翻译： 一种离子注入装置，包括第一等离子体室，第二等离子体室和设置在其间的提取电极。 第一和第二等离子体室被配置为响应于其中引入不同的进料气体来容纳各个等离子体。 提取电极与等离子体室电隔离。 提供电压施加到第一等离子体室以上用于在其中产生等离子体的偏置电位。 提取电压驱动等离子体电位以将第一等离子体中的离子加速到期望的注入能量。 加速离子通过引出电极中的孔，并且被引向容纳在第二等离子体室内用于注入的衬底。

    End terminations for electrodes used in ion implantation systems
    8.
    发明授权
    End terminations for electrodes used in ion implantation systems 有权
    用于离子注入系统的电极的终端

    公开(公告)号：US08309935B2

    公开(公告)日：2012-11-13

    申请号：US12418053

    申请日：2009-04-03

    申请人： Frank Sinclair ,  Svetlana B. Radovanov ,  Kenneth H. Purser

    发明人： Frank Sinclair ,  Svetlana B. Radovanov ,  Kenneth H. Purser

    IPC分类号： H01J3/14

    CPC分类号： H01J37/3171 ,  H01J37/04 ,  H01J2237/036 ,  H01J2237/15

    摘要： An ion implantation system includes an electrostatic lens. The electrostatic lens includes a terminal electrode, a ground electrode and a suppression electrode disposed therebetween. An ion beam enters the electrostatic lens through the terminal electrode and exits through the ground electrode. The electrodes have associated electrostatic equipotentials. An end plate is disposed between a top and bottom portion of the suppression electrode and/or the top and bottom portion of the ground electrode. The respective end plate has a shape which corresponds to the electrostatic equipotential associated with the particular electrode in order to maintain uniformity of the beam as it passes through the electrostatic lens.

    摘要翻译： 离子注入系统包括静电透镜。 静电透镜包括端子电极，接地电极和设置在它们之间的抑制电极。 离子束通过端子电极进入静电透镜并通过接地电极离开。 电极具有相关的静电等电位。 端板设置在抑制电极的顶部和底部之间和/或接地电极的顶部和底部之间。 相应的端板具有对应于与特定电极相关联的静电等电位的形状，以便在光束通过静电透镜时保持光束的均匀性。

    END TERMINATIONS FOR ELECTRODES USED IN ION IMPLANTATION SYSTEMS
    9.
    发明申请
    END TERMINATIONS FOR ELECTRODES USED IN ION IMPLANTATION SYSTEMS 有权
    在离子植入系统中使用的电极的终止终止

    公开(公告)号：US20100252746A1

    公开(公告)日：2010-10-07

    申请号：US12418053

    申请日：2009-04-03

    申请人： Frank Sinclair ,  Svetlana B. Radovanov ,  Kenneth H. Purser

    发明人： Frank Sinclair ,  Svetlana B. Radovanov ,  Kenneth H. Purser

    IPC分类号： H01J3/14

    CPC分类号： H01J37/3171 ,  H01J37/04 ,  H01J2237/036 ,  H01J2237/15

    摘要： An ion implantation system includes an electrostatic lens. The electrostatic lens includes a terminal electrode, a ground electrode and a suppression electrode disposed therebetween. An ion beam enters the electrostatic lens through the terminal electrode and exits through the ground electrode. The electrodes have associated electrostatic equipotentials. An end plate is disposed between a top and bottom portion of the suppression electrode and/or the top and bottom portion of the ground electrode. The respective end plate has a shape which corresponds to the electrostatic equipotential associated with the particular electrode in order to maintain uniformity of the beam as it passes through the electrostatic lens.

    摘要翻译： 离子注入系统包括静电透镜。 静电透镜包括端子电极，接地电极和设置在它们之间的抑制电极。 离子束通过端子电极进入静电透镜并通过接地电极离开。 电极具有相关的静电等电位。 端板设置在抑制电极的顶部和底部之间和/或接地电极的顶部和底部之间。 相应的端板具有对应于与特定电极相关联的静电等电位的形状，以便在光束通过静电透镜时保持光束的均匀性。

    Plasma potential modulated ion implantation system
    10.
    发明授权
    Plasma potential modulated ion implantation system 有权
    等离子体电位调制离子注入系统

    公开(公告)号：US09297063B2

    公开(公告)日：2016-03-29

    申请号：US13457451

    申请日：2012-04-26

    申请人： Svetlana B. Radovanov ,  Victor M. Benveniste ,  Bon-Woong Koo ,  Richard M. White ,  Kevin M. Daniels

    发明人： Svetlana B. Radovanov ,  Victor M. Benveniste ,  Bon-Woong Koo ,  Richard M. White ,  Kevin M. Daniels

    IPC分类号： H01J37/317 ,  H01J37/16 ,  C23C14/48 ,  C23C16/04 ,  H01J37/32

    CPC分类号： C23C14/48 ,  C23C16/042 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J2237/0817 ,  H01J2237/083

    摘要： An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.

    摘要翻译： 一种离子注入系统，包括等离子体源，掩模狭缝和等离子体室。 等离子体源被配置为响应于其中引入气体而在等离子体室内产生等离子体。 掩模狭缝与等离子体室电隔离。 将正电压偏压施加到用于产生等离子体的偏置电位之上的等离子体室。 正电压偏压驱动等离子体电位以将离子加速到所需的注入能量。 加速的离子通过掩模狭缝中的孔，并且被引导到用于植入的基底。 掩模狭缝与等离子体室电隔离并且相对于等离子体保持在接地电位。