发明授权
- 专利标题: Ion beam contamination determination
- 专利标题(中): 离子束污染测定
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申请号: US11289885申请日: 2005-11-30
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公开(公告)号: US07402820B2公开(公告)日: 2008-07-22
- 发明人: Russell Low , Joseph C. Olson , Antonella Cucchetti , Anthony Renau , Marie Welsch
- 申请人: Russell Low , Joseph C. Olson , Antonella Cucchetti , Anthony Renau , Marie Welsch
- 申请人地址: US MA Gloucester
- 专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址: US MA Gloucester
- 主分类号: H01L21/425
- IPC分类号: H01L21/425 ; H01J37/317
摘要:
A system, method and program product for determining contamination of an ion beam are disclosed. In the event of an isobaric interference, or near isobaric interference between a contaminant ion and an expected ion of an ion beam, which is difficult to detect, it is possible to measure a third ion in the ion beam and estimate, based on the amount of the third ion measured, a relative amount of the contaminant ion compared to the expected ion. The estimated relative amount of the contaminant ion is used together with a measured mass resolution of the ion implantation system to determine whether an ion implantation process needs to be suspended.
公开/授权文献
- US20070241276A1 Ion beam contamination determination 公开/授权日:2007-10-18
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