发明授权
- 专利标题: Ion beam neutral detection
- 专利标题(中): 离子束中性检测
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申请号: US11056445申请日: 2005-02-11
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公开(公告)号: US07250617B2公开(公告)日: 2007-07-31
- 发明人: Anthony Renau , Joseph C. Olson , Eric Hermanson , Gordon C. Angel
- 申请人: Anthony Renau , Joseph C. Olson , Eric Hermanson , Gordon C. Angel
- 申请人地址: US MA Gloucester
- 专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址: US MA Gloucester
- 主分类号: H01J37/08
- IPC分类号: H01J37/08
摘要:
An ion beam neutral detector system, an ion implanter system including the detector system and a method of detecting ion beam neutrals that ensures an ion implant is meeting contamination requirements are disclosed. The detector includes an energy contamination monitor positioned with in an ion implanter system. A method of the invention includes implanting the workpiece using an ion beam, and periodically detecting ion beam neutrals in the ion beam such that adjustments to the ion implanter system can be made for optimization.
公开/授权文献
- US20050178981A1 Ion beam neutral detection 公开/授权日:2005-08-18
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