公开(公告)号：US5968845A

公开(公告)日：1999-10-19

申请号：US796194

申请日：1997-02-07

申请人： Toyoji Chino ,  Yasuhito Kumabuchi ,  Isao Kidoguchi ,  Hideto Adachi

发明人： Toyoji Chino ,  Yasuhito Kumabuchi ,  Isao Kidoguchi ,  Hideto Adachi

IPC分类号： H01L21/306 ,  H01L21/473 ,  H01S5/10 ,  H01S5/20 ,  H01S5/223 ,  H01S5/227 ,  H01S5/323 ,  H01L21/20

CPC分类号： H01L21/473 ,  H01L21/30621 ,  H01S5/227 ,  H01S5/1064 ,  H01S5/209 ,  H01S5/2231 ,  H01S5/2275 ,  H01S5/32325 ,  H01S5/32391 ,  Y10S438/935

摘要： An etching method for performing dry-etching on a III-V group compound semiconductor or a II-VI group compound semiconductor in a dry-etching apparatus comprising a plasma source for creating a plasma of density of about 10.sup.10 cm.sup.-3 or greater, using a mixed gas containing a gas including a halogen element and a gas including nitrogon. The etching conditions are as follows: (a flow rate of the gas containing said halogen gas)/(a flow rate of said nitrogen gas) .gtoreq.1; and an internal pressure during etching reaction is about 1 mTorr or greater.

摘要翻译： 一种用于在干蚀刻装置中对III-V族化合物半导体或II-VI族化合物半导体进行干蚀刻的蚀刻方法，该干蚀刻装置包括用于产生密度为约1010cm -3或更大的等离子体的等离子体源，其使用 含有包含卤素元素的气体和包括硝基的气体的混合气体。 蚀刻条件如下：（含有卤素气体的气体的流量）/（所述氮气的流量）> = 1; 并且蚀刻反应期间的内部压力为约1mTorr或更大。

公开(公告)号：US5960019A

公开(公告)日：1999-09-28

申请号：US828034

申请日：1997-03-27

申请人： Nobuhiko Hayashi ,  Daisuke Ide ,  Akira Ibaraki

发明人： Nobuhiko Hayashi ,  Daisuke Ide ,  Akira Ibaraki

IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/204 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/222 ,  H01S5/32316 ,  H01S5/3432

摘要： A semiconductor laser device comprises a cladding layer of a first conductivity type, an active layer, a cladding layer of a second conductivity type, and a current blocking layer having a stripe-shaped opening having a predetermined width W for restricting a current path and forming the current path, and having a larger band gap than that of the cladding layer of the second conductivity type and having a smaller refractive index than that of the cladding layer of the second conductivity type. A difference .DELTA.n between effective refractive indexes in a region, which corresponds to the opening, in the active layer and an effective refractive index in a region, which corresponds to both sides of the opening, in the active layer and the width W (.mu.m) of the opening are so set as to satisfy a predetermined relationship. The difference .DELTA.n between the effective refractive indexes is set by selecting the A1 composition ratio of the current blocking layer and the thickness of the cladding layer of the second conductivity type on the both sides of the opening.

摘要翻译： 半导体激光装置包括第一导电类型的包覆层，有源层，第二导电类型的包覆层和具有用于限制电流路径的预定宽度W的条形开口的电流阻挡层，并形成 电流路径，并且具有比第二导电类型的包层更大的带隙，并且具有比第二导电类型的包覆层的折射率更小的折射率。 与有源层中的开口对应的区域中的有效折射率与对应于开口的两侧的区域中的有效折射率在有效层中的有效折射率和宽度W（mu m）设定为满足规定的关系。 通过选择开口两侧的电流阻挡层的A1组成比和第二导电类型的包覆层的厚度来设定有效折射率之间的差ΔTAn。

公开(公告)号：US5949809A

公开(公告)日：1999-09-07

申请号：US935890

申请日：1997-09-23

申请人： Masayoshi Ashida

发明人： Masayoshi Ashida

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/2219

摘要： A semiconductor laser device is of a double-hetero structure having an active layer sandwiched between a first conductivity type cladding layer and a second conductivity type cladding layer, one of the first and second conductivity type cladding layers being formed by a first cladding layer and a second cladding layer. A current blocking layer is provided between the first cladding layer and the second cladding layer, and formed of a material having a forbidden band gap wider than that of the active layer and a refractive index lower than that of the one cladding layer, the current blocking layer being formed with a current injecting region having a conductivity type different from that of the one cladding layer. An over-saturation absorbing layer is formed in the current blocking layer, the over-saturation absorbing layer is formed of such a material that has approximately the same forbidden band gap as that of the active layer. It is possible to set independently the distance between the active layer and the over-saturation absorbing layer as well as the distance between the active layer and the current blocking layer, so as to provide device operation on a low operating current (lowered threshold value) with low noise and astigmatism in a multi mode instead of a longitudinal mode.

摘要翻译： 半导体激光装置是具有夹在第一导电型包覆层和第二导电型包层之间的有源层的双异质结构，第一和第二导电型包覆层中的一个由第一包层和 第二包层。 电流阻挡层设置在第一包层和第二覆层之间，由具有比有源层宽的禁带宽度的材料形成，折射率低于一层包层的电流阻挡层 层形成有具有与一个包层的导电类型不同的导电类型的电流注入区。 在电流阻挡层中形成过饱和吸收层，过饱和吸收层由与有源层大致相同禁带宽度的材料形成。 可以独立地设置有源层和过饱和吸收层之间的距离以及有源层和电流阻挡层之间的距离，以便在低工作电流（降低的阈值）上提供器件操作， 在多模式而不是纵向模式下具有低噪声和散光。

公开(公告)号：US5932004A

公开(公告)日：1999-08-03

申请号：US861762

申请日：1997-05-22

申请人： Taiji Morimoto ,  Zenkichi Shibata ,  Takashi Ishizumi ,  Keisuke Miyazaki ,  Toshio Hata ,  Yoshinori Ohitsu

发明人： Taiji Morimoto ,  Zenkichi Shibata ,  Takashi Ishizumi ,  Keisuke Miyazaki ,  Toshio Hata ,  Yoshinori Ohitsu

IPC分类号： H01S5/00 ,  H01L33/30 ,  H01S5/042 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  C30B19/06

CPC分类号： H01S5/305 ,  H01L33/305 ,  H01S5/0421 ,  H01S5/32308 ,  H01S2304/06 ,  H01S5/2231 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/32316

摘要： A semiconductor laser device having high performance, low operating voltage, and long service life, and a method for fabricating the same are provided. A semiconductor multilayer film including an active layer for use of laser beam oscillation is stacked on a substrate. Then a clad layer composed of p-type AlGaAs doped with a p-type impurity Mg, and a contact layer composed of p-type GaAs doped also with Mg are grown by an LPE growth process, and further a surface layer having a high-resistance portion present in the contact layer and low in carrier concentration is removed. The active layer for use of laser beam oscillation is arranged in a substantially center of an end surface from which the laser beam is emitted.

摘要翻译： 提供了具有高性能，低工作电压和长使用寿命的半导体激光器件及其制造方法。 包括用于激光束振荡的有源层的半导体多层膜堆叠在基板上。 然后，通过LPE生长法生长由掺杂有p型杂质Mg的p型AlGaAs构成的包层和由Mg掺杂的由p型GaAs构成的接触层， 存在于接触层中的电阻部分和载流子浓度低。 用于激光束振荡的有源层被布置在发射激光束的端面的大致中心。

公开(公告)号：US5872022A

公开(公告)日：1999-02-16

申请号：US522933

申请日：1995-09-01

申请人： Takashi Motoda ,  Manabu Kato ,  Masayoshi Takemi

发明人： Takashi Motoda ,  Manabu Kato ,  Masayoshi Takemi

IPC分类号： H01L21/302 ,  H01L21/20 ,  H01L21/306 ,  H01S3/094 ,  H01S5/00 ,  H01S5/026 ,  H01S5/12 ,  H01S5/20 ,  H01S5/223 ,  H01S5/227 ,  H01S5/343 ,  H01S5/40 ,  H01L21/00

CPC分类号： B82Y20/00 ,  H01L21/02392 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/30612 ,  H01S5/026 ,  H01S5/12 ,  H01S5/2232 ,  H01S5/227 ,  H01S5/4031 ,  H01S2304/04 ,  H01S5/1228 ,  H01S5/2077 ,  H01S5/2081 ,  H01S5/2086 ,  H01S5/2237 ,  H01S5/2275 ,  H01S5/34306 ,  H01S5/3434

摘要： A method of etching a III-V compound semiconductor uses an etching gas including the group V element of the III-V compound semiconductor substrate layer while keeping the III-V compound semiconductor layer at a temperature higher than the crystal growth temperature of the III-V compound semiconductor. Etching using this method provides a higher degree of controllability than wet etching. In addition, because no etching solution is employed, the etching method can be employed in a crystal growth apparatus. Further, because an element of the III-V compound semiconductor layer is employed in the etching gas, incorporation of residual impurities can be prevented, keeping the etched surface clean.

摘要翻译： 蚀刻III-V族化合物半导体的方法使用包含III-V族化合物半导体衬底层的V族元素的蚀刻气体，同时将III-V族化合物半导体层保持在比III- V化合物半导体。 使用该方法的蚀刻提供比湿蚀刻更高的可控性。 此外，由于不使用蚀刻溶液，因此可以在晶体生长装置中使用蚀刻方法。 此外，由于在蚀刻气体中使用III-V族化合物半导体层的元素，因此可以防止残留杂质的并入，保持蚀刻表面的清洁。

公开(公告)号：US5850411A

公开(公告)日：1998-12-15

申请号：US713892

申请日：1996-09-17

申请人： Jo S. Major, Jr. ,  Randall S. Geels

发明人： Jo S. Major, Jr. ,  Randall S. Geels

IPC分类号： H01S5/065 ,  H01S5/223 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34326 ,  H01S2301/14 ,  H01S5/0658 ,  H01S5/2022 ,  H01S5/2231 ,  H01S5/3404

摘要： An AlGaInP/GaAs laser diode is disclosed in which the active region is made up of quantum wells that are sufficiently thin (less than 5 nm thick) that the transition energy increase due to quantum confinement of the carriers becomes significant. This allows the quantum well material composition to be selected for compressive strain so that the laser operates in the TE polarization mode, while still obtaining a transition energy of from 1.9-2.0 eV for 620-650 nm laser emission. Quantum barriers have sufficient thickness to confine carriers to the quantum wells. Self-pulsation may be obtained in a heterostructure that also includes a saturable absorption layer proximate to the active region and a ridge structure transversely confining absorption produced carriers in the central section of the absorber layer, while allowing lateral carrier diffusion to side regions where carriers are allowed to leave the absorber layer.

公开(公告)号：US5822350A

公开(公告)日：1998-10-13

申请号：US711744

申请日：1996-09-10

申请人： Takashi Nishimura ,  Shoichi Karakida ,  Motoharu Miyashita ,  Diethard Marx

发明人： Takashi Nishimura ,  Shoichi Karakida ,  Motoharu Miyashita ,  Diethard Marx

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/2205 ,  H01S5/221 ,  H01S5/2227 ,  H01S5/3432

摘要： A semiconductor laser includes a ridge structure includes a cladding layer having a thermal expansion coefficient. Current blocking structures are disposed at both sides of the ridge structure and include Al.sub.x Ga.sub.1-x As first current blocking layers having an Al composition x larger than 0.7 and contacting the ridge structure. In this structure, even when the Al composition of the first current blocking layers is reduced at both sides of the ridge structure, the wavelength of light absorbed by the first current blocking layers does not exceed the wavelength of laser light produced in the active layer. Therefore, unwanted absorption of the laser light at both sides of the ridge structure is avoided, resulting in a semiconductor laser with improved laser characteristics.

摘要翻译： 半导体激光器包括具有热膨胀系数的包层的脊结构。 电流阻挡结构设置在脊结构的两侧，并且包括Al x Ga 1-x As具有大于0.7的Al组分x并接触脊结构的第一电流阻挡层。 在该结构中，即使当第一电流阻挡层的Al组成在脊结构的两侧减小时，由第一电流阻挡层吸收的光的波长也不会超过在有源层中产生的激光的波长。 因此，避免了在脊结构的两侧不必要地吸收激光，导致具有改善的激光特性的半导体激光器。

公开(公告)号：US5809053A

公开(公告)日：1998-09-15

申请号：US675479

申请日：1996-07-03

申请人： Shin'ichi Nakatsuka ,  Seiji Maruo ,  Shinya Kobayashi ,  Akira Arimoto ,  Susumu Saito

发明人： Shin'ichi Nakatsuka ,  Seiji Maruo ,  Shinya Kobayashi ,  Akira Arimoto ,  Susumu Saito

IPC分类号： H01S5/042 ,  H01S5/10 ,  H01S5/16 ,  H01S5/223 ,  H01S5/40 ,  H01S3/19

CPC分类号： H01S5/10 ,  H01S5/0425 ,  H01S5/2231 ,  H01S2301/18 ,  H01S5/0421 ,  H01S5/0655 ,  H01S5/1064 ,  H01S5/16 ,  H01S5/4031

摘要： A semiconductor laser device is disclosed, in which two semiconductor layers of different conduction types are formed on a semiconductor substrate, an active semiconductor layer having a forbidden band width narrower than the two semiconductor layers is formed between the two semiconductor layers, and a waveguide encloses the light in a plane parallel to the active layer. The waveguide includes at least two regions of different widths. The wider one of the waveguide regions is located in the vicinity of the end surface of the semiconductor laser. A relation holds that .pi./6

摘要翻译： 公开了一种半导体激光器件，其中在半导体衬底上形成两种不同导电类型的半导体层，在两个半导体层之间形成具有比两个半导体层窄的禁带宽的有源半导体层，并且波导封装 平行于有源层的平面中的光。 波导包括至少两个不同宽度的区域。 较宽的一个波导区域位于半导体激光器的端面附近。 关系式表示pi / 6

公开(公告)号：US5793788A

公开(公告)日：1998-08-11

申请号：US693806

申请日：1996-08-01

申请人： Yuichi Inaba ,  Kiyoshi Fujihara ,  Masato Ishino ,  Takeshi Shimazaki ,  Isao Kidoguchi

发明人： Yuichi Inaba ,  Kiyoshi Fujihara ,  Masato Ishino ,  Takeshi Shimazaki ,  Isao Kidoguchi

IPC分类号： H01L33/30 ,  H01L33/32 ,  H01L33/40 ,  H01S5/042 ,  H01S5/223 ,  H01S5/227 ,  H01S5/30 ,  H01S3/19 ,  H01L23/48 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01S5/0425 ,  H01L33/30 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/2231 ,  H01S5/2275 ,  H01S5/2277 ,  H01S5/3054

摘要： A semiconductor light emitting element includes a p-type electrode which in turn includes a contact electrode layer including at least a Pt layer. Particularly, the semiconductor light emitting element further includes a layered structure including at least an n-type cladding layer, an active layer, and a p-type cladding layer; and a p-type contact layer formed above the layered structure, and the contact electrode layer is formed on the p-type contact layer.

摘要翻译： 半导体发光元件包括p型电极，该p型电极又包括至少包括Pt层的接触电极层。 特别地，半导体发光元件还包括至少包括n型包覆层，有源层和p型覆层的层状结构; 以及形成在层状结构上方的p型接触层，并且在p型接触层上形成接触电极层。

公开(公告)号：US5787104A

公开(公告)日：1998-07-28

申请号：US588863

申请日：1996-01-19

申请人： Satoshi Kamiyama ,  Masakatsu Suzuki ,  Takeshi Uenoyama ,  Kiyoshi Ohnaka ,  Akira Takamori ,  Masaya Mannoh ,  Isao Kidoguchi ,  Hideto Adachi ,  Akihiko Ishibashi ,  Toshiya Fukuhisa ,  Yasuhito Kumabuchi

发明人： Satoshi Kamiyama ,  Masakatsu Suzuki ,  Takeshi Uenoyama ,  Kiyoshi Ohnaka ,  Akira Takamori ,  Masaya Mannoh ,  Isao Kidoguchi ,  Hideto Adachi ,  Akihiko Ishibashi ,  Toshiya Fukuhisa ,  Yasuhito Kumabuchi

IPC分类号： H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2201 ,  H01S5/34333 ,  H01L33/16 ,  H01L33/32 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/02272 ,  H01S5/2068 ,  H01S5/2232 ,  H01S5/2237 ,  H01S5/24 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/3403 ,  Y10S257/918 ,  Y10T428/12528

摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.