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公开(公告)号：US07887910B2
公开(公告)日：2011-02-15
申请号：US11665182
申请日：2006-05-11
IPC分类号： B32B5/16
CPC分类号： B32B5/16 , G02B3/00 , G02B3/02 , G02B5/188 , G02B5/1895 , Y10T428/24413 , Y10T428/25 , Y10T428/265 , Y10T428/31598 , Y10T428/31609
摘要： A laminated optical element includes an optical substrate made of an optical material, an intermediate layer provided on the optical substrate, and an optical resin layer provided on the intermediate layer. The optical resin layer is made of a resin composed of an organometallic polymer having an -M-O-M- bond (M is a metal atom), a metal alkoxide and/or a hydrolysate thereof having only one hydrolyzable group, and an organic polymer having a urethane bond and a methacryloxy group or an acryloxy group. The intermediate layer is obtained by dispersing metal oxide microparticles in a matrix resin composed of a metal alkoxide having a radical polymerizable group and a hydrolyzable group and/or a hydrolysate thereof.
摘要翻译： 层压光学元件包括由光学材料制成的光学基板，设置在光学基板上的中间层和设置在中间层上的光学树脂层。 光学树脂层由具有-MOM-键（M为金属原子）的有机金属聚合物，仅具有一个可水解基团的金属醇盐和/或其水解产物组成的树脂和具有氨基甲酸酯的有机聚合物 键和甲基丙烯酰氧基或丙烯酰氧基。 中间层通过将金属氧化物微粒分散在由具有自由基聚合性基团的金属醇盐和可水解基团和/或其水解产物构成的基质树脂中而获得。
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公开(公告)号：US20100246100A1
公开(公告)日：2010-09-30
申请号：US12720876
申请日：2010-03-10
申请人： Takashi UMEMOTO , Nobuhiko Hayashi
发明人： Takashi UMEMOTO , Nobuhiko Hayashi
IPC分类号： H01G9/08
摘要： A solid electrolytic capacitor includes at least one capacitor element in which the other end of an anode lead extends beyond an exposed portion of an electrolyte layer exposed from a cathode layer. The solid electrolytic capacitor further includes: an anode terminal connected to the other end of the anode lead, a cathode terminal connected to the cathode layer, a resin layer and a resin outer package covering the capacitor element and the resin layer. The resin layer covering the exposed portion of the electrolyte layer, the other end of the anode lead, and a connecting part between the other end of the anode lead and the anode terminal. The resin layer includes a first resin layer covering the exposed portion and a second resin layer covering the first resin layer, the first resin layer being softer than the second resin layer.
摘要翻译： 固体电解电容器包括至少一个电容器元件，其中阳极引线的另一端延伸超过暴露于阴极层的电解质层的暴露部分。 固体电解电容器还包括：连接到阳极引线的另一端的阳极端子，连接到阴极层的阴极端子，覆盖电容器元件和树脂层的树脂层和树脂外部封装。 覆盖电解质层的暴露部分的树脂层，阳极引线的另一端以及阳极引线和阳极端子的另一端之间的连接部分。 树脂层包括覆盖暴露部分的第一树脂层和覆盖第一树脂层的第二树脂层，第一树脂层比第二树脂层软。
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公开(公告)号：US07457507B2
公开(公告)日：2008-11-25
申请号：US10586664
申请日：2005-11-30
IPC分类号： G02B6/00
摘要： An organometallic polymer material is obtained which excels in translucency, shows improved hardness after it is cured and exhibits high reliability at high temperature and high humidity.Characteristically, the organometallic polymer material contains an organometallic polymer having an —M—O—M— bond (M indicates a metal atom), a metal alkoxide having a single hydrolyzable group and/or its hydrolysate and an organic polymer having a urethane bond and a methacryloxy or acryloxy group, and preferably further contains an organic anhydride and/or an organic acid.
摘要翻译： 得到透明性优异的有机金属聚合物材料，其在固化后显示出提高的硬度，并且在高温和高湿度下表现出高可靠性。 特征在于，有机金属聚合物材料含有具有-MOM-键（M表示金属原子）的有机金属聚合物，具有单个可水解基团的金属醇盐和/或其水解产物和具有氨基甲酸酯键和甲基丙烯酰氧基或丙烯酰氧基的有机聚合物 并且优选还包含有机酸酐和/或有机酸。
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公开(公告)号：US20080232762A1
公开(公告)日：2008-09-25
申请号：US10586664
申请日：2005-11-30
摘要： An organometallic polymer material is obtained which excels in translucency, shows improved hardness after it is cured and exhibits high reliability at high temperature and high humidity.Characteristically, the organometallic polymer material contains an organometallic polymer having an -M-O-M- bond (M indicates a metal atom), a metal alkoxide having a single hydrolyzable group and/or its hydrolysate and an organic polymer having a urethane bond and a methacryloxy or acryloxy group, and preferably further contains an organic anhydride and/or an organic acid.
摘要翻译： 得到透明性优异的有机金属聚合物材料，其在固化后显示出提高的硬度，并且在高温和高湿度下表现出高可靠性。 特征在于，有机金属聚合物材料含有具有-MOM-键（M表示金属原子）的有机金属聚合物，具有单个可水解基团的金属醇盐和/或其水解产物和具有氨基甲酸酯键和甲基丙烯酰氧基或丙烯酰氧基的有机聚合物 并且优选还包含有机酸酐和/或有机酸。
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5.发明申请Nitride-based semiconductor element and method of forming nitride-based semiconductor 有权基于氮化物的半导体元件和形成氮化物基半导体的方法公开(公告)号：US20080224151A1
公开(公告)日：2008-09-18
申请号：US12071978
申请日：2008-02-28
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02576 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01S5/0207 , H01S5/22 , H01S5/2214 , H01S5/227 , H01S5/34333 , H01S2304/12
摘要： A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained.
摘要翻译： 获得具有优异的质量生产率和优异的元件特性的氮化物基半导体元件。 该氮化物系半导体元件包括基板，该基板包括具有突出部的表面，形成为仅与基板的表面的突出部接触的掩模层，形成在基板的凹部的第一氮化物系半导体层 以及形成在具有元件区域的第一氮化物系半导体层上的掩模层和氮化物系半导体元件层。 因此，具有低位错密度的第一氮化物基半导体层通过用于选择生长的掩模层容易地形成在衬底和掩模层的突出部分上。 当在具有低位错密度的第一氮化物基半导体层上生长具有元素区域的氮化物基半导体元件层时，可以容易地获得具有优异元素特性的氮化物基半导体元件。 第一氮化物基半导体层仅通过基板上的单一生长形成，从而获得具有优异的批量生产率的氮化物基半导体元件。
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6.发明申请ORGANIC-INORGANIC COMPOSITE FORMING MATERIAL, ORGANIC-INORGANIC COMPOSITE AND OPTICAL ELEMENT USING THE SAME 审中-公开有机无机复合材料，有机无机复合材料和使用它的光学元件公开(公告)号：US20080161444A1
公开(公告)日：2008-07-03
申请号：US11847091
申请日：2007-08-29
IPC分类号： C08K3/22
摘要： An organic-inorganic composite forming material is disclosed which contains a fluorene-based compound having an acryloyl or methacryloyl group, an acrylic monomer other than the fluorene-based compound, metal oxide fine particles, an alkylamine, an organic amine having a phenyl group and a photoinitiator.
摘要翻译： 公开了一种有机 - 无机复合材料形成材料，其含有具有丙烯酰基或甲基丙烯酰基的芴系化合物，除了芴系化合物以外的丙烯酸单体，金属氧化物微粒，烷基胺，具有苯基的有机胺和 光引发剂。
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公开(公告)号：US07279344B2
公开(公告)日：2007-10-09
申请号：US11518174
申请日：2006-09-11
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/0237 , H01L21/0242 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/0265 , H01L33/007 , H01S5/22 , H01S5/3063 , H01S5/3086 , H01S5/309 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A nitride-based semiconductor element having excellent element characteristics is obtained by forming a nitride-based semiconductor layer having excellent crystallinity without performing a long etching process. This nitride-based semiconductor element and the method thereof includes forming a mask layer having a recess portion on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer. A nitride-based semiconductor layer is laterally grown on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer. Thus, the strain of the laterally grown nitride-based semiconductor layer is so relaxed that the crystallinity of the nitride-based semiconductor layer is improved.
摘要翻译： 通过在不进行长蚀刻处理的情况下形成具有优异的结晶性的氮化物系半导体层，可以获得元素特性优异的氮化物系半导体元件。 这种氮化物基半导体元件及其方法包括在底层的基本平坦的上表面上形成具有凹部的掩模层，以部分地暴露底层的上表面。 在掩模层的凹部上形成空隙的同时，在底层的露出部和掩模层上横向生长氮化物系半导体层。 因此，横向生长的氮化物基半导体层的应变如此松弛，从而提高了氮化物基半导体层的结晶度。
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公开(公告)号：US07181121B2
公开(公告)日：2007-02-20
申请号：US10850463
申请日：2004-05-21
申请人： Keiichi Kuramoto , Youhei Nakagawa , Mitsuaki Matsumoto , Hiroaki Izu , Hitoshi Hirano , Nobuhiko Hayashi
发明人： Keiichi Kuramoto , Youhei Nakagawa , Mitsuaki Matsumoto , Hiroaki Izu , Hitoshi Hirano , Nobuhiko Hayashi
IPC分类号： G02B6/10
CPC分类号： G02B6/1221 , G02B6/125 , G02B2006/12126
摘要： An optical device includes a substrate, a core provided on the substrate, a first clad and a second clad formed around the core. The optical device further includes a light absorber layer, provided on the substrate, which absorbs light leaked from the core. The light absorber layer is formed of, for instance, the same material as that constituting the core.
摘要翻译： 光学装置包括基板，设置在基板上的芯，围绕芯部形成的第一包层和第二包层。 光学装置还包括设置在基板上的吸收层，其吸收从芯部泄漏的光。 光吸收层由例如与构成芯的材料相同的材料形成。
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公开(公告)号：US07109530B2
公开(公告)日：2006-09-19
申请号：US10796154
申请日：2004-03-10
IPC分类号： H01L33/00
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/0237 , H01L21/0242 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/0265 , H01L33/007 , H01S5/22 , H01S5/3063 , H01S5/3086 , H01S5/309 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A nitride-based semiconductor element having excellent element characteristics is obtained by fabricating a nitride-based semiconductor layer having excellent crystallinity without performing extended etching. The nitride-based semiconductor element comprises a mask layer, having a recess portion, formed on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer, a nitride-based semiconductor layer formed on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer, and a nitride-based semiconductor element layer, formed on the nitride-based semiconductor layer, having an element region. During laterally growth, strain is relaxed thereby improving crystallinity. The underlayer is formed in a substantially flat shape, thereby avoiding extended etching.
摘要翻译： 通过在不进行延伸蚀刻的情况下制造具有优异结晶性的氮化物系半导体层，可以获得元素特性优异的氮化物系半导体元件。 氮化物系半导体元件包括具有凹部的掩模层，形成在下层的大致平坦的上表面上以部分地暴露下层的上表面;形成在底层的露出部分上的氮化物系半导体层 以及掩模层，同时在掩模层的凹部上形成空隙，以及形成在具有元件区域的氮化物基半导体层上的氮化物基半导体元件层。 在横向生长期间，松弛应变，从而提高结晶度。 底层形成为大致平坦的形状，从而避免延长蚀刻。
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公开(公告)号：US20060011946A1
公开(公告)日：2006-01-19
申请号：US10506100
申请日：2003-02-28
申请人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura , Masayuki Shouno , Yuuji Hishida , Keiichi Yodoshi , Daijiro Inoue , Takashi Kano , Nobuhiko Hayashi
发明人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura , Masayuki Shouno , Yuuji Hishida , Keiichi Yodoshi , Daijiro Inoue , Takashi Kano , Nobuhiko Hayashi
IPC分类号： H01L27/10
CPC分类号： H01S5/32341 , H01S5/22 , H01S5/2219
摘要： A nitride semiconductor laser element capable of controlling the lateral confinement of light with a good reproducibility, the nitride semiconductor element comprising an n-type cladding layer (3), an MQW light emitting layer (4) formed on the cladding layer (3), a p-type cladding layer (5) and a p-type contact layer (6) formed on the light emitting layer (4), and an ion implantation light absorbing layer (7) formed, by introducing carbon, in regions other than a current passing region (8) in the cladding layer (5) and the contact layer (6).
摘要翻译： 一种氮化物半导体激光元件，其能够以良好的再现性控制光的横向限制，所述氮化物半导体元件包括n型包覆层（3），形成在所述包层（3）上的MQW发光层（4） 形成在发光层（4）上的p型覆盖层（5）和p型接触层（6），以及通过引入碳而形成的离子注入光吸收层（7） 包覆层（5）和接触层（6）中的电流通过区域（8）。
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