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    Semiconductor laser having a burying layer of a II-VI compound
    1.
    发明授权
    Semiconductor laser having a burying layer of a II-VI compound 失效
    半导体激光器具有II-VI化合物的掩埋层

    公开(公告)号：US4607369A

    公开(公告)日：1986-08-19

    申请号：US480460

    申请日：1983-03-30

    申请人： Tatsuhiko Niina ,  Keiichi Yodoshi

    发明人： Tatsuhiko Niina ,  Keiichi Yodoshi

    IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S3/19

    CPC分类号： H01S5/2231 ,  H01L33/0062 ,  H01L33/26 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/2211 ,  H01S5/223 ,  H01S5/2234 ,  H01S5/32308

    摘要： A semiconductor laser includes an oscillation layer comprising a first clad layer, an active layer and a second clad layer which are comprised of gallium aluminum arsenide and deposited, in this order, on a semiconductor substrate. A buried cap layer in a stripe geometry for narrowing a width of a current path is deposited on a second clad layer. A burying layer comprised of II-VI compound such as zinc selenide, zinc sulfide and the like is formed on the second clad layer other than the portion on which the cap layer is formed, so that the cap layer is buried. The buried layer is formed utilizing a low temperature deposition such as a molecular beam epitaxy.

    摘要翻译： 半导体激光器包括振荡层，该振荡层包括由镓砷化铝构成的第一覆盖层，有源层和第二覆盖层，并依次沉积在半导体衬底上。 用于使电流路径的宽度变窄的条形几何形状的掩埋盖层沉积在第二覆盖层上。 在除了形成有盖层的部分之外的第二包层上形成由诸如硒化锌，硫化锌等的II-VI化合物构成的掩埋层，从而掩盖覆盖层。 掩埋层是利用诸如分子束外延的低温沉积形成的。

    Semiconductor laser device and manufacturing method thereof
    3.
    发明授权
    Semiconductor laser device and manufacturing method thereof 失效
    半导体激光器件及其制造方法

    公开(公告)号：US5963572A

    公开(公告)日：1999-10-05

    申请号：US773346

    申请日：1996-12-26

    申请人： Ryoji Hiroyama ,  Takahiro Uetani ,  Kiyoshi Oota ,  Koji Komeda ,  Masayuki Shono ,  Akira Ibaraki ,  Keiichi Yodoshi

    发明人： Ryoji Hiroyama ,  Takahiro Uetani ,  Kiyoshi Oota ,  Koji Komeda ,  Masayuki Shono ,  Akira Ibaraki ,  Keiichi Yodoshi

    IPC分类号： H01S5/22 ,  H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/2231 ,  H01S5/2206 ,  H01S5/222

    摘要： A semiconductor laser device including an n-type cladding layer, an active layer, a p-type cladding layer having a ridge portion, an n-type optical confinement layer formed on the flat portion and side surfaces of the ridge portion of the p-type cladding layer, and an n-type current blocking layer formed on the n-type optical confinement layer in this order. The optical confinement layer is composed of a low resistivity layer doped with n-type impurity, which has a smaller refractive index than the p-type cladding layer and a bandgap energy greater than the energy of lasing light. The optical confinement layer has an impurity concentration of 5.times.10.sup.7 cm.sup.-3 or less. The n-type current blocking layer has a thickness of 0.4 .mu.m or less.

    摘要翻译： 一种半导体激光装置，包括n型包层，有源层，具有脊部的p型包覆层，形成在平坦部分上的n型光限制层和p型包层， 型包层，以及n型光限制层上形成的n型电流阻挡层。 光限制层由掺杂有n型杂质的低电阻率层构成，其折射率比p型覆层更小，并且带隙能量大于激光的能量。 光学限制层的杂质浓度为5×10 7 cm -3以下。 n型电流阻挡层的厚度为0.4μm以下。

    Semiconductor laser apparatus and optical pickup apparatus using the same
    4.
    发明授权
    Semiconductor laser apparatus and optical pickup apparatus using the same 失效
    半导体激光装置及使用其的光学拾取装置

    公开(公告)号：US5727009A

    公开(公告)日：1998-03-10

    申请号：US811457

    申请日：1997-03-03

    申请人： Atsushi Tajiri ,  Kazushi Mori ,  Keiichi Yodoshi ,  Takao Yamaguchi ,  Akira Ibaraki ,  Tatsuhiko Niina

    发明人： Atsushi Tajiri ,  Kazushi Mori ,  Keiichi Yodoshi ,  Takao Yamaguchi ,  Akira Ibaraki ,  Tatsuhiko Niina

    IPC分类号： G11B7/09 ,  G11B7/12 ,  G11B7/13 ,  G11B7/135 ,  G11B7/1353 ,  G11B7/22 ,  H01S3/00 ,  H01S5/00 ,  H01S5/022 ,  H01S5/30 ,  H01S3/19

    CPC分类号： G11B7/22 ,  G11B7/123 ,  G11B7/1353 ,  G11B7/1362 ,  H01L2224/48091 ,  H01S5/005 ,  H01S5/02216 ,  H01S5/02248 ,  H01S5/02292

    摘要： In an optical pickup apparatus, a laser beam emitted from a semiconductor laser device is reflected upward by a reflecting member, transmitted through a transmission type diffraction grating and split into at least three beams, and which beams are transmitted through a transmission type holographic optical element and condensed onto an optical recording medium by a condenser portion. A return beam reflected by the optical recording medium passes through the condenser portion and diffracted not to impinge upon the transmission type diffraction grating by the holographic optical element and directed to a photodetector portion of a light receiving device. The semiconductor laser device and the light receiving device are disposed in a mount member. The transmission type holographic optical element is supported by a supporting member three-dimensionally movably with respect to the mount member, and the supporting member or/and the holographic optical element is/are fixed with adhesive material with the transmission type holographic optical element being positioned with respect to the mount member.

    摘要翻译： 在光学拾取装置中，从半导体激光装置发射的激光束被反射部件向上反射，通过透射型衍射光栅透射并分裂成至少三束光束，并且哪些光束通过透射型全息光学元件 并通过冷凝器部分冷凝到光学记录介质上。 由光记录介质反射的返回光束通过冷凝器部分，并通过全息光学元件衍射而不被撞击在透射型衍射光栅上并被引导到光接收装置的光电检测器部分。 半导体激光装置和光接收装置设置在安装构件中。 透射型全息光学元件由相对于安装构件三维地移动的支撑构件支撑，并且支撑构件或/和全息光学元件被固定有粘合材料，透射型全息光学元件被定位 相对于安装构件。

    Optical pickup device
    5.
    发明授权
    Optical pickup device 失效
    光学拾取装置

    公开(公告)号：US6072607A

    公开(公告)日：2000-06-06

    申请号：US866444

    申请日：1997-05-30

    申请人： Atsushi Tajiri ,  Kazushi Mori ,  Keiichi Yodoshi ,  Takao Yamaguchi

    发明人： Atsushi Tajiri ,  Kazushi Mori ,  Keiichi Yodoshi ,  Takao Yamaguchi

    IPC分类号： G02B27/10 ,  G11B7/12 ,  G11B7/13 ,  G11B7/135 ,  G11B7/22 ,  G02B5/32 ,  G02B5/12 ,  G11B7/00

    CPC分类号： G11B7/131 ,  G02B27/1006 ,  G02B27/108 ,  G02B27/1093 ,  G11B7/123 ,  G11B7/1353 ,  G11B7/22 ,  H01L2224/05553 ,  H01L2924/19107

    摘要： An optical pickup device of the present invention includes a substrate having at least a major surface, a semiconductor laser provided on the surface of the substrate for emitting laser beam, a reflection-type diffraction grating oriented to the semiconductor laser for splitting the laser beam into at least three beams and reflecting them upward, a hologram for receiving the three beams reflected from the reflection-type diffraction grating, and an objective lens for converging onto an optical recording medium the three beams transmitted by the hologram. The three beams reflected from the optical recording medium are focused by the hologram and directed onto the photodetector from the above.

    摘要翻译： 本发明的光拾取装置包括至少具有主表面的基板，设置在用于发射激光束的基板的表面上的半导体激光器，定向到用于将激光束分裂的半导体激光器的反射型衍射光栅 至少三个光束并向上反射，用于接收从反射型衍射光栅反射的三个光束的全息图，以及用于会聚到光记录介质上的由全息图传输的三个光束的物镜。 从光记录介质反射的三个光束由全息图聚焦并从上面引导到光电探测器上。

    Semiconductor laser device
    10.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5559818A

    公开(公告)日：1996-09-24

    申请号：US312696

    申请日：1994-09-27

    申请人： Masayuki Shono ,  Ryoji Hiroyama ,  Keiichi Yodoshi

    发明人： Masayuki Shono ,  Ryoji Hiroyama ,  Keiichi Yodoshi

    IPC分类号： H01S5/34 ,  H01S5/343 ,  H01S3/18 ,  H01L33/00

    CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34326

    摘要： The present invention is directed to a semiconductor laser device in which an active layer is constituted by a quantum well layer having a structure in which well layers and barrier layers which are formed on a GaAs substrate are alternately layered, cladding layers are provided so as to interpose the active layer, the value of a strain on each of the well layers is -0.8% to -1.5%, the thickness of a well layer is from 80 .ANG. to 180 .ANG., the value of strain on each of the barrier layers is +0.5% to +1.0%, the thickness of the barrier layer is 20 .ANG. to 60 .ANG., and the respective numbers of layered well layers and barrier layers are 2 to 4.

    摘要翻译： 本发明涉及一种半导体激光器件，其中有源层由具有结构的量子阱层构成，其中形成在GaAs衬底上的阱层和阻挡层交替层叠，提供包层，以便 插入有源层，阱层的应变值为-0.8％〜-1.5％，阱层的厚度为80〜180，势垒层的应变值为 + 0.5％〜+ 1.0％时，阻挡层的厚度为20〜60，分层阱层和阻挡层的数量为2〜4。