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    Semiconductor laser device and manufacturing method thereof
    1.
    发明授权
    Semiconductor laser device and manufacturing method thereof 失效
    半导体激光器件及其制造方法

    公开(公告)号：US5963572A

    公开(公告)日：1999-10-05

    申请号：US773346

    申请日：1996-12-26

    申请人： Ryoji Hiroyama ,  Takahiro Uetani ,  Kiyoshi Oota ,  Koji Komeda ,  Masayuki Shono ,  Akira Ibaraki ,  Keiichi Yodoshi

    发明人： Ryoji Hiroyama ,  Takahiro Uetani ,  Kiyoshi Oota ,  Koji Komeda ,  Masayuki Shono ,  Akira Ibaraki ,  Keiichi Yodoshi

    IPC分类号： H01S5/22 ,  H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/2231 ,  H01S5/2206 ,  H01S5/222

    摘要： A semiconductor laser device including an n-type cladding layer, an active layer, a p-type cladding layer having a ridge portion, an n-type optical confinement layer formed on the flat portion and side surfaces of the ridge portion of the p-type cladding layer, and an n-type current blocking layer formed on the n-type optical confinement layer in this order. The optical confinement layer is composed of a low resistivity layer doped with n-type impurity, which has a smaller refractive index than the p-type cladding layer and a bandgap energy greater than the energy of lasing light. The optical confinement layer has an impurity concentration of 5.times.10.sup.7 cm.sup.-3 or less. The n-type current blocking layer has a thickness of 0.4 .mu.m or less.

    摘要翻译： 一种半导体激光装置，包括n型包层，有源层，具有脊部的p型包覆层，形成在平坦部分上的n型光限制层和p型包层， 型包层，以及n型光限制层上形成的n型电流阻挡层。 光限制层由掺杂有n型杂质的低电阻率层构成，其折射率比p型覆层更小，并且带隙能量大于激光的能量。 光学限制层的杂质浓度为5×10 7 cm -3以下。 n型电流阻挡层的厚度为0.4μm以下。

    Semiconductor laser device
    2.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5559818A

    公开(公告)日：1996-09-24

    申请号：US312696

    申请日：1994-09-27

    申请人： Masayuki Shono ,  Ryoji Hiroyama ,  Keiichi Yodoshi

    发明人： Masayuki Shono ,  Ryoji Hiroyama ,  Keiichi Yodoshi

    IPC分类号： H01S5/34 ,  H01S5/343 ,  H01S3/18 ,  H01L33/00

    CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34326

    摘要： The present invention is directed to a semiconductor laser device in which an active layer is constituted by a quantum well layer having a structure in which well layers and barrier layers which are formed on a GaAs substrate are alternately layered, cladding layers are provided so as to interpose the active layer, the value of a strain on each of the well layers is -0.8% to -1.5%, the thickness of a well layer is from 80 .ANG. to 180 .ANG., the value of strain on each of the barrier layers is +0.5% to +1.0%, the thickness of the barrier layer is 20 .ANG. to 60 .ANG., and the respective numbers of layered well layers and barrier layers are 2 to 4.

    摘要翻译： 本发明涉及一种半导体激光器件，其中有源层由具有结构的量子阱层构成，其中形成在GaAs衬底上的阱层和阻挡层交替层叠，提供包层，以便 插入有源层，阱层的应变值为-0.8％〜-1.5％，阱层的厚度为80〜180，势垒层的应变值为 + 0.5％〜+ 1.0％时，阻挡层的厚度为20〜60，分层阱层和阻挡层的数量为2〜4。