公开(公告)号：USRE36802E

公开(公告)日：2000-08-01

申请号：US299420

申请日：1999-04-26

申请人： Randall S. Geels ,  Jo S. Major, Jr.

发明人： Randall S. Geels ,  Jo S. Major, Jr.

IPC分类号： H01S5/065 ,  H01S5/223 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19 ,  H01S3/085

CPC分类号： B82Y20/00 ,  H01S5/34326 ,  H01S2301/14 ,  H01S5/0658 ,  H01S5/2022 ,  H01S5/2231 ,  H01S5/3404

摘要： An AlGaInP/GaAs laser diode is disclosed in which the active region is made up of quantum wells that are sufficiently thin (less than 5 nm thick) that the transition energy increase due to quantum confinement of the carriers becomes significant. This allows the quantum well material composition to be selected for compressive strain so that the laser operates in the TE polarization mode, while still obtaining a transition energy of from 1.9-2.0 eV for 620-650 nm laser emission. Quantum barriers have sufficient thickness to confine carriers to the quantum wells. Self-pulsation may be obtained in a heterostructure that also includes a saturable absorption layer proximate to the active region and a ridge structure transversely confining absorption produced carriers in the central section of the absorber layer, while allowing lateral carrier diffusion to side regions where carriers are allowed to leave the absorber layer.

摘要翻译： 公开了一种AlGaInP / GaAs激光二极管，其中有源区由足够薄（小于5nm厚）的量子阱组成，由于载流子的量子限制而导致的跃迁能量增加变得显着。 这允许选择量子阱材料组合物用于压缩应变，使得激光器以TE偏振模式工作，同时对于620-650nm的激光发射仍然获得1.9-2.0eV的跃迁能量。 量子势垒具有足够的厚度以将载流子限制到量子阱。 可以在异质结构中获得自脉动，该异质结构还包括邻近有源区的可饱和吸收层，并且脊结构横向地限制吸收层在吸收层的中心部分中产生的载流子，同时允许侧向载流子扩散到载体为 允许离开吸收层。

公开(公告)号：US5850411A

公开(公告)日：1998-12-15

申请号：US713892

申请日：1996-09-17

申请人： Jo S. Major, Jr. ,  Randall S. Geels

发明人： Jo S. Major, Jr. ,  Randall S. Geels

IPC分类号： H01S5/065 ,  H01S5/223 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34326 ,  H01S2301/14 ,  H01S5/0658 ,  H01S5/2022 ,  H01S5/2231 ,  H01S5/3404

摘要： An AlGaInP/GaAs laser diode is disclosed in which the active region is made up of quantum wells that are sufficiently thin (less than 5 nm thick) that the transition energy increase due to quantum confinement of the carriers becomes significant. This allows the quantum well material composition to be selected for compressive strain so that the laser operates in the TE polarization mode, while still obtaining a transition energy of from 1.9-2.0 eV for 620-650 nm laser emission. Quantum barriers have sufficient thickness to confine carriers to the quantum wells. Self-pulsation may be obtained in a heterostructure that also includes a saturable absorption layer proximate to the active region and a ridge structure transversely confining absorption produced carriers in the central section of the absorber layer, while allowing lateral carrier diffusion to side regions where carriers are allowed to leave the absorber layer.

公开(公告)号：US06330257B1

公开(公告)日：2001-12-11

申请号：US09368398

申请日：1999-08-04

申请人： Jo S. Major, Jr. ,  Garnet Luick ,  Ian J. Booth ,  David C. Dawson ,  Fritz Christo ,  Robert G. Waarts

发明人： Jo S. Major, Jr. ,  Garnet Luick ,  Ian J. Booth ,  David C. Dawson ,  Fritz Christo ,  Robert G. Waarts

IPC分类号： H01S514

CPC分类号： H01S5/146 ,  H01S5/0656

摘要： The effectiveness of reflected light to stabilize the operational characteristics of a semiconductor diode laser varies with the polarization orientation of the reflected light. Stabilization failure can occur if the polarization orientation of the reflected light is orthogonal to the polarization of the light emitted by the laser source. The use of multiple reflectors can reduce the probability of stabilization failure by arranging the reflectors to return to the laser source portions of light having polarization orientations that are statistically independent with respect to each other.

摘要翻译： 用于稳定半导体二极管激光器的操作特性的反射光的有效性随反射光的偏振取向而变化。 如果反射光的偏振方向与激光源发出的光的偏振正交，就会发生稳定失效。 使用多个反射器可以通过布置反射器返回具有相对于彼此统计学独立的偏振取向的光的激光源部分来降低稳定化失败的可能性。

公开(公告)号：US5926493A

公开(公告)日：1999-07-20

申请号：US859416

申请日：1997-05-20

申请人： Stephen O'Brien ,  Hanmin Zhao ,  Jo S. Major, Jr.

发明人： Stephen O'Brien ,  Hanmin Zhao ,  Jo S. Major, Jr.

IPC分类号： G02B6/12 ,  G02B6/124 ,  H01S5/12 ,  H01S5/125 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19 ,  G02B6/34

CPC分类号： B82Y20/00 ,  G02B6/124 ,  H01S5/12 ,  G02B2006/12107 ,  H01S5/125 ,  H01S5/3211 ,  H01S5/32333 ,  H01S5/3408 ,  H01S5/34313 ,  H01S5/3432

摘要： Optical semiconductor devices with integrated diffraction gratings with higher quality are realized through the use of Al-free grating layers. AlGaAs/GaAs regime optical semiconductor devices, such as laser diodes or optical filters, conventionally utilize an AlGaAs grating layer that has a strong affinity for oxidation. Instead of a Al-containing layer, a quantenary, InGaAsP grating layer is utilized, lattice matched to the underlying AlGaAs/GaAs structure, substantially eliminating any problem of oxide contamination. Also, an Al-free, ternary InGaP grating layer is utilized in the InGaP/InGaAsP/GaAs material regime. The quantum well active region of these devices may also be modified to extend the gain bandwidth of operation of these devices to insure continued operation over a wider temperature range with the wavelength peak of the grating in that the wavelength peak of the grating more assuredly remains within the wavelength operating range of the device.

摘要翻译： 具有高质量集成衍射光栅的光学半导体器件通过使用无Al栅格层实现。 诸如激光二极管或滤光器的AlGaAs / GaAs态光学半导体器件通常利用对氧化具有强亲和力的AlGaAs光栅层。 代替含Al层，使用量子化的InGaAsP栅格层，与下面的AlGaAs / GaAs结构晶格匹配，基本上消除了氧化物污染的任何问题。 而且，在InGaP / InGaAsP / GaAs材料体系中使用了不含Al的三元InGaP光栅层。 这些器件的量子阱有源区也可以被修改，以扩大这些器件的工作的增益带宽，以确保在光栅的波长峰值的更宽的温度范围内继续工作，因为光栅的波长峰值更可靠地保持在 设备的波长工作范围。

公开(公告)号：US07223964B2

公开(公告)日：2007-05-29

申请号：US10449763

申请日：2003-05-30

申请人： Lynn Karl Wiese ,  Matthew Glenn Peters ,  Jo S. Major, Jr.

发明人： Lynn Karl Wiese ,  Matthew Glenn Peters ,  Jo S. Major, Jr.

IPC分类号： H01J5/02 ,  H01J40/14

CPC分类号： H01S5/02248 ,  H01L23/047 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/1433 ,  H01S5/02216 ,  H01S5/02276 ,  H01S5/02284 ,  H01L2924/00014 ,  H01L2924/00

摘要： A storage information system is disclosed for keeping archival information on the individual active optoelectronic components that are used in telecommunication equipment. The system involves enclosing a nonvolatile memory chip inside the hermetic package of the active optoelectronic component. A memory chip is used to keep the relevant information about the active optoelectronic component such as serial number, part number and specifications. Sensors can also be included inside the hermetic package to monitor the operating conditions of the optoelectronic component. The information system is capable of storing information that is relevant to the component reliability such as: hours of operation, maximum current or voltage, and maximum temperature. The information storage system has the advantage that the archived information is intimately associated with the optoelectronic component thereby lessening the likelihood that information is lost or tampered with. The information system eliminates need for keeping paper records on individual optoelectronic components. It also provides a means for determining if the optoelectronic component was operated outside its specified operating limits. The users of optoelectronic components can also access the information system as needed for the purposes of repair or maintenance of telecommunications equipment.

摘要翻译： 公开了一种存储信息系统，用于保存在电信设备中使用的各个有源光电子部件上的归档信息。 该系统包括将非易失性存储器芯片封装在有源光电子部件的密封封装内。 存储芯片用于保存有源光电子元件的相关信息，如序列号，部件号和规格。 传感器也可以包括在密封包装内，以监测光电子部件的工作状态。 信息系统能够存储与组件可靠性相关的信息，例如：操作小时数，最大电流或电压以及最高温度。 信息存储系统具有的优点是归档信息与光电子部件密切相关，从而减少信息丢失或篡改的可能性。 信息系统消除了在各个光电子部件上保存纸张记录的需要。 它还提供了一种确定光电子元件是否在其规定的工作极限以外运行的方法。 光电组件的用户也可以根据需要访问信息系统，以便维护或维护电信设备。

公开(公告)号：US6122303A

公开(公告)日：2000-09-19

申请号：US25888

申请日：1998-02-18

申请人： Jo S. Major, Jr.

发明人： Jo S. Major, Jr.

IPC分类号： H01S5/068 ,  H01S5/343 ,  H04B10/155 ,  H04B10/158 ,  H01S3/19

CPC分类号： H01S5/3434 ,  B82Y20/00 ,  H01S5/34313 ,  H04B10/504 ,  H04B10/6911 ,  H04B10/6932 ,  H01S5/068 ,  H01S5/34306

摘要： A single transverse mode semiconductor laser diode source is designed for employment in an optical transmission link comprising a transmitter module and a receiver module operable under uncooled conditions, i.e., without the need of costly cooling equipment, such as thermoelectric coolers. The optical transmission system includes both the semiconductor laser diode source and the optical receiver module that are both designed to operate uncooled under high frequencies (e.g., GHz range) over a wide temperature range without significant changes in signal bandwidth and at temperatures in excess of 125.degree. C.

摘要翻译： 单个横模半导体激光二极管源设计用于光传输链路中，该光传输链路包括可在非冷却条件下操作的发射机模块和接收机模块，即不需要昂贵的冷却设备，例如热电冷却器。 光传输系统包括半导体激光二极管源和光接收器模块，两者都被设计成在宽的温度范围内在高频（例如，GHz范围）下不经过冷却而在没有信号带宽的显着变化和超过125的温度下运行 DEG C.

公开(公告)号：US5760939A

公开(公告)日：1998-06-02

申请号：US546852

申请日：1995-10-23

申请人： Radhakrishnan Nagarajan ,  Jo S. Major, Jr.

发明人： Radhakrishnan Nagarajan ,  Jo S. Major, Jr.

IPC分类号： H01S5/068 ,  H01S5/343 ,  H04B10/155 ,  H04B10/158 ,  H04B10/00

CPC分类号： H01S5/3434 ,  B82Y20/00 ,  H01S5/34313 ,  H04B10/504 ,  H04B10/6911 ,  H04B10/6932 ,  H01S5/068 ,  H01S5/34306

摘要： An optical transmission link has both a transmitter module and a receiver module operable under uncooled conditions, i.e., without the need of costly cooling equipment, such as thermoelectric coolers. The optical transmission system includes both a semiconductor laser diode source and an optical receiver module that are both designed to operate uncooled under high frequencies (e.g., GHz range) over a wide temperature range without significant changes in signal bandwidth and at temperatures in excess of 125.degree. C. Compensation is provided to reduce the effect of photodiode noise and amplifier noise. In addition, temperature compensation can be provided that provides for overall reduction in receiver noise across the bandwidth of the receiver module through maintenance of a temperature environment optimizing receiver performance.

摘要翻译： 光传输链路具有在不冷却条件下可操作的发射器模块和接收器模块，即不需要昂贵的冷却设备，例如热电冷却器。 光传输系统包括半导体激光二极管源和光接收器模块，其均被设计为在宽的温度范围内在高频（例如，GHz范围）下未经制冷而不经过信号带宽的显着变化并且在超过125℃的温度下运行 DEG C.提供补偿以减少光电二极管噪声和放大器噪声的影响。 此外，可以提供温度补偿，其通过维持优化接收机性能的温度环境来提供整个接收器模块的带宽上的接收机噪声的整体降低。