公开(公告)号：US06567449B1

公开(公告)日：2003-05-20

申请号：US09651057

申请日：2000-08-30

申请人： Masayoshi Ashida

发明人： Masayoshi Ashida

IPC分类号： H01S500

CPC分类号： H01S5/4043 ,  H01S5/2231 ,  H01S5/2275 ,  H01S5/4018 ,  H01S5/4087

摘要： A group of semiconductor layers of a first light emitting region(6) including an active layer(3), determined by a first wavelength of laser beam, sandwiched between two cladding layers(2) and(4) of which the band gap is greater than that of the active layer(3) are deposited on a semiconductor substrate 1. Similarly, another group of semiconductor layers of a second light emitting region(16) including an active layer(13), determined by a second wavelength of laser beam, sandwiched between two cladding layers(12) and(14) of which the band gap is greater than that of the active layer 13 are deposited via a contact layer(5) on the first light emitting region(6). The first and the second light emitting region(6) and (16) are aligned with each other along the perpendicular (vertical) to the semiconductor substrate(1). Accordingly, a multi-color semiconductor laser having multiple laser beam sources in their respective light emitting regions aligned along the vertical to the substrate can be fabricated by simple steps of production.

摘要翻译： 包括由激光束的第一波长确定的有源层（3）的第一发光区域（6）的一组半导体层夹在两个包层（2）和（4）之间，其中带隙较大 类似地，包括由激光束的第二波长确定的活性层（13）的第二发光区域（16）的另一组半导体层， 夹在两个包覆层（12）和（14）之间，其带隙大于有源层13的带隙，经由第一发光区域（6）上的接触层（5）沉积。 第一和第二发光区域（6）和（16）沿着与半导体衬底（1）的垂直（垂直）彼此对准。 因此，通过简单的制造步骤可以制造在其垂直于衬底对准的各自的发光区域中具有多个激光束源的多色半导体激光器。

公开(公告)号：US06463087B1

公开(公告)日：2002-10-08

申请号：US09325208

申请日：1999-06-03

申请人： Masayoshi Ashida ,  Satoshi Uchida

发明人： Masayoshi Ashida ,  Satoshi Uchida

IPC分类号： H01S522

CPC分类号： B82Y20/00 ,  H01S5/209 ,  H01S5/2231 ,  H01S5/3432

摘要： A semiconductor laser element is made by forming a lower clad layer, an active layer and an upper clad layer sequentially one on top of another on a semiconductor substrate, forming an etching stop layer completely over the upper clad layer, forming a contact layer on the etching stop layer, and etching portions of the contact layer to form steps. The etching stop layer has a slower etching speed than the contact layer against the etching liquid used for forming the steps by etching portions of the contact layer. An upper electrode is formed on the contact layer and a lower electrode is formed on the bottom surface of the substrate. The steps provide areas in the active layer where a current will not flow through.

摘要翻译： 半导体激光元件通过在半导体衬底上依次形成下包层，有源层和上包层，在上包覆层上形成完全的蚀刻停止层，在其上形成接触层 蚀刻停止层和蚀刻接触层的部分以形成步骤。 与通过蚀刻接触层的部分形成步骤的蚀刻液的接触层相比，蚀刻停止层的蚀刻速度慢。 在接触层上形成上电极，在基板的底面上形成下电极。 这些步骤提供活动层中的电流不会流过的区域。

公开(公告)号：US5949809A

公开(公告)日：1999-09-07

申请号：US935890

申请日：1997-09-23

申请人： Masayoshi Ashida

发明人： Masayoshi Ashida

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/2219

摘要： A semiconductor laser device is of a double-hetero structure having an active layer sandwiched between a first conductivity type cladding layer and a second conductivity type cladding layer, one of the first and second conductivity type cladding layers being formed by a first cladding layer and a second cladding layer. A current blocking layer is provided between the first cladding layer and the second cladding layer, and formed of a material having a forbidden band gap wider than that of the active layer and a refractive index lower than that of the one cladding layer, the current blocking layer being formed with a current injecting region having a conductivity type different from that of the one cladding layer. An over-saturation absorbing layer is formed in the current blocking layer, the over-saturation absorbing layer is formed of such a material that has approximately the same forbidden band gap as that of the active layer. It is possible to set independently the distance between the active layer and the over-saturation absorbing layer as well as the distance between the active layer and the current blocking layer, so as to provide device operation on a low operating current (lowered threshold value) with low noise and astigmatism in a multi mode instead of a longitudinal mode.

摘要翻译： 半导体激光装置是具有夹在第一导电型包覆层和第二导电型包层之间的有源层的双异质结构，第一和第二导电型包覆层中的一个由第一包层和 第二包层。 电流阻挡层设置在第一包层和第二覆层之间，由具有比有源层宽的禁带宽度的材料形成，折射率低于一层包层的电流阻挡层 层形成有具有与一个包层的导电类型不同的导电类型的电流注入区。 在电流阻挡层中形成过饱和吸收层，过饱和吸收层由与有源层大致相同禁带宽度的材料形成。 可以独立地设置有源层和过饱和吸收层之间的距离以及有源层和电流阻挡层之间的距离，以便在低工作电流（降低的阈值）上提供器件操作， 在多模式而不是纵向模式下具有低噪声和散光。