公开(公告)号：US20120250396A1

公开(公告)日：2012-10-04

申请号：US13526671

申请日：2012-06-19

Applicant: Mark G. Johnson ,  Thomas H. Lee ,  Vivek Subramanian ,  Paul Michael Farmwald ,  James M. Cleeves

Inventor： Mark G. Johnson ,  Thomas H. Lee ,  Vivek Subramanian ,  Paul Michael Farmwald ,  James M. Cleeves

IPC: G11C11/00 ,  H01L21/8239

CPC classification number: G11C17/06 ,  G11C11/5692 ,  G11C13/003 ,  G11C17/14 ,  G11C17/16 ,  G11C17/165 ,  G11C2213/71 ,  G11C2213/76 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/16

Abstract: A memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. The steering element and state change element are disposed in a vertically-oriented pillar. Other aspects are also provided.

Abstract translation: 提供了一种存储单元，其包括转向元件和与该转向元件串联耦合的非易失性状态变化元件。 转向元件和状态改变元件设置在垂直定向的支柱中。 还提供其他方面。

公开(公告)号：US20120223380A1

公开(公告)日：2012-09-06

申请号：US13468731

申请日：2012-05-10

Applicant: Thomas H. Lee ,  Vivek Subramanian ,  James M. Cleeves ,  Andrew J. Walker ,  Christopher J. Petti ,  Igor G. Kouznetzov ,  Mark G. Johnson ,  Paul Michael Farmwald ,  Brad Herner

Inventor： Thomas H. Lee ,  Vivek Subramanian ,  James M. Cleeves ,  Andrew J. Walker ,  Christopher J. Petti ,  Igor G. Kouznetzov ,  Mark G. Johnson ,  Paul Michael Farmwald ,  Brad Herner

IPC: H01L29/788 ,  H01L21/336 ,  H01L29/792

CPC classification number: H01L27/11582 ,  G11C16/0466 ,  G11C16/10 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3427 ,  G11C2211/5612 ,  H01L21/31053 ,  H01L21/76819 ,  H01L21/8221 ,  H01L23/528 ,  H01L23/5329 ,  H01L27/0688 ,  H01L27/112 ,  H01L27/11286 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11558 ,  H01L27/11565 ,  H01L27/11568 ,  H01L27/11573 ,  H01L27/11578 ,  H01L27/1158 ,  H01L27/12 ,  H01L27/1203 ,  H01L29/0626 ,  H01L29/0661 ,  H01L29/16 ,  H01L29/1604 ,  H01L29/42324 ,  H01L29/42332 ,  H01L29/42364 ,  H01L29/511 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7391 ,  H01L29/78642 ,  H01L29/7881 ,  H01L29/7889 ,  H01L29/792 ,  H01L29/7926 ,  H01L29/861 ,  H01L29/8616

Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.

Abstract translation: 提供了一种包括多个器件级的电荷存储器件的单片三维阵列，其中通过化学机械抛光将两个连续的器件级之间的至少一个表面平坦化。

公开(公告)号：US08138921B1

公开(公告)日：2012-03-20

申请号：US12189037

申请日：2008-08-08

Applicant: James Montague Cleeves ,  Vivek Subramanian

Inventor： James Montague Cleeves ,  Vivek Subramanian

IPC: G08B13/14

CPC classification number: G08B13/2411 ,  G08B13/242 ,  G08B13/2425

Abstract: A method for reliable deactivation of a security (EAS) tag, and an apparatus for accomplishing the same. The method generally includes placing a security tag a first distance from a deactivation apparatus; determining whether a deactivation confirmation signal has occurred; and when it is determined that the deactivation confirmation signal did not occur, placing the security tag closer to the deactivation apparatus. The deactivation apparatus generally includes a pad configured to transmit a deactivation pulse having a power sufficient to deactivate the security tag when it is within a deactivation field; a tag reader configured to detect a signal transmission from an active tag when it is in a read field of the deactivation apparatus; a confirmation indicator configured to indicate that the pad has sent the deactivation pulse; and logic configured to determine when an active tag is in the deactivation field or the read field, and communicate to the confirmation indicator that the pad has sent the deactivation pulse.

Abstract translation: 用于可靠地停用安全（EAS）标签的方法，以及用于实现其的装置。 该方法通常包括将安全标签放置在去激活装置的第一距离处; 确定是否发生了去激活确认信号; 并且当确定没有发生停用确认信号时，将安全标签放置在更接近停用装置的位置。 去激活设备通常包括：配置为发送具有足够的功率的去激活脉冲的焊盘，当其处于去激活区域内时，该功能足以停用安全标签; 标签读取器，被配置为当其处于去激活装置的读取字段时，检测来自活动标签的信号传输; 确认指示器，被配置为指示所述焊盘已经发送去激活脉冲; 以及逻辑，被配置为确定活动标签何时处于去激活字段或读取字段中，并且向确认指示符通知衬垫已发送去激活脉冲。

公开(公告)号：US07816189B2

公开(公告)日：2010-10-19

申请号：US11925723

申请日：2007-10-26

Applicant: Vivek Subramanian ,  James M. Cleeves

Inventor： Vivek Subramanian ,  James M. Cleeves

IPC: H01L21/82

CPC classification number: G11C17/06 ,  G11C11/5692 ,  G11C13/003 ,  G11C17/14 ,  G11C17/16 ,  G11C17/165 ,  G11C2213/71 ,  G11C2213/76 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/16

Abstract: A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

Abstract translation: 公开了一种非常高密度的现场可编程存储器。 阵列垂直地形成在衬底上方，使用几层，其各层包括垂直制造的存储单元。 N级阵列中的单元可以形成N + 1掩蔽步骤以及接触所需的掩蔽步骤。 自动对准技术的最大限度地使光刻限制最小化。 在一个实施例中，外围电路形成在硅衬底中，并且在衬底上方制造N电平阵列。

公开(公告)号：US20080261843A1

公开(公告)日：2008-10-23

申请号：US11736871

申请日：2007-04-18

Applicant: Christine Marie Nixon Lee ,  Michael Augustine Brennan ,  Vivek Subramanian

Inventor： Christine Marie Nixon Lee ,  Michael Augustine Brennan ,  Vivek Subramanian

IPC: A61K8/02

CPC classification number: C11D9/444 ,  C11D1/02 ,  C11D1/38 ,  C11D1/65 ,  C11D1/66 ,  C11D1/83 ,  C11D1/835 ,  C11D1/86 ,  C11D3/40 ,  C11D9/267 ,  C11D17/0047 ,  C11D17/006

Abstract: The invention relates to bar compositions comprising thermochromatic pigment or dye signaling temperature and/or benefit agent release. In a preferred embodiment, the pigment is introduced in the form of a separate domain (e.g., separate chips) which separate chip or chips is combined with a surfactant-containing chips to form the final bar.

Abstract translation: 本发明涉及包含热色素或染料信号传导温度和/或有益剂释放的棒组合物。 在一个优选的实施方案中，将颜料以单独的区域（例如分离的芯片）的形式引入，其将芯片或芯片与含表面活性剂的芯片组合以形成最终的棒。

公开(公告)号：US20080259996A1

公开(公告)日：2008-10-23

申请号：US11736901

申请日：2007-04-18

Applicant: Christine Marie Nixon Lee ,  Michael Augustine Brennan ,  Vivek Subramanian

Inventor： Christine Marie Nixon Lee ,  Michael Augustine Brennan ,  Vivek Subramanian

IPC: G01K11/00

CPC classification number: G01K11/12 ,  C11D3/40 ,  C11D9/444 ,  C11D17/006 ,  G01K2207/00

Abstract: The invention relates to method of signaling temperature and/or benefit agent release using bar compositions comprising thermochromatic pigment or dye. In a preferred embodiment, the pigment is introduced in the form of a separate domain (e.g., separate chips) which separate chip or chips is combined with a surfactant-containing chips to form the final bar.

Abstract translation: 本发明涉及使用包含热色素或染料的棒组合物来发出温度和/或有益剂释放的方法。 在一个优选的实施方案中，将颜料以单独的区域（例如分离的芯片）的形式引入，其将芯片或芯片与含表面活性剂的芯片组合以形成最终的棒。

公开(公告)号：US20070299270A1

公开(公告)日：2007-12-27

申请号：US11475825

申请日：2006-06-27

Applicant: Bijan Harichian ,  Vivek Subramanian

Inventor： Bijan Harichian ,  Vivek Subramanian

IPC: C07C237/02

CPC classification number: C07C231/12 ,  C07C233/47 ,  C07C233/49

Abstract: The invention relates to an improved process for oxidizing a primary amidoalcohol to the corresponding amidocarboxylic acid in high yield.

Abstract translation: 本发明涉及以高产率将伯酰胺醇氧化成相应的酰胺基羧酸的改进方法。

公开(公告)号：US07307187B1

公开(公告)日：2007-12-11

申请号：US11475825

申请日：2006-06-27

Applicant: Bijan Harichian ,  Vivek Subramanian

Inventor： Bijan Harichian ,  Vivek Subramanian

IPC: C07C409/24 ,  C07C229/00

CPC classification number: C07C231/12 ,  C07C233/47 ,  C07C233/49

Abstract: The invention relates to an improved process for oxidizing a primary amidoalcohol to the corresponding amidocarboxylic acid in high yield.

Abstract translation: 本发明涉及以高产率将伯酰胺醇氧化成相应的酰胺基羧酸的改进方法。

公开(公告)号：US07265000B2

公开(公告)日：2007-09-04

申请号：US11354470

申请日：2006-02-14

Applicant: Vivek Subramanian ,  James M. Cleeves

Inventor： Vivek Subramanian ,  James M. Cleeves

IPC: H01L21/82

CPC classification number: G11C17/06 ,  G11C11/5692 ,  G11C13/003 ,  G11C17/14 ,  G11C17/16 ,  G11C17/165 ,  G11C2213/71 ,  G11C2213/76 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/16

Abstract: A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

Abstract translation: 公开了一种非常高密度的现场可编程存储器。 阵列垂直地形成在衬底上方，使用几层，其各层包括垂直制造的存储单元。 N级阵列中的单元可以形成N + 1掩蔽步骤以及接触所需的掩蔽步骤。 自动对准技术的最大限度地使光刻限制最小化。 在一个实施例中，外围电路形成在硅衬底中，并且在衬底上方制造N电平阵列。

公开(公告)号：US20070175296A1

公开(公告)日：2007-08-02

申请号：US11205881

申请日：2005-08-15

Applicant: Vivek Subramanian ,  Daniel Huang ,  Steven Volkman ,  Frank Liao

Inventor： Vivek Subramanian ,  Daniel Huang ,  Steven Volkman ,  Frank Liao

IPC: B22F3/10

CPC classification number: H05K1/097 ,  B22F1/0022 ,  B22F1/0062 ,  B22F9/24 ,  B22F2998/10 ,  B82Y30/00 ,  H01B1/22 ,  H01L2924/19042 ,  H01Q9/27 ,  H05K3/1241 ,  B22F1/0085 ,  B22F3/1021

Abstract: Metallic nanoparticles are provided which can be used in forming metallic film conductors at reduced temperatures compatible with plastic carriers for the film conductors. This is realized by using a lower molecular weight organic encapsulant of the nanoparticle and thereby reducing the temperature at which the organic encapsulant evaporates. Further, the sintering or melting temperature of the metallic nanoparticle is reduced by using a lower sized nanoparticle, thereby increasing the particle surface area relative to the particle volume and thus reducing the required heat and melting temperature of the particle.

Abstract translation: 提供金属纳米粒子，其可用于在与导体的塑料载体相容的降低的温度下形成金属膜导体。 这通过使用纳米颗粒的较低分子量有机密封剂并由此降低有机密封剂蒸发的温度来实现。 此外，通过使用较小尺寸的纳米颗粒来降低金属纳米颗粒的烧结或熔融温度，从而相对于颗粒体积增加颗粒表面积，从而降低颗粒所需的热和熔融温度。