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    MEMS AND CMOS INTEGRATION WITH LOW-TEMPERATURE BONDING
    62.
    发明申请
    MEMS AND CMOS INTEGRATION WITH LOW-TEMPERATURE BONDING 有权
    MEMS和CMOS集成与低温接合

    公开(公告)号：US20170057814A1

    公开(公告)日：2017-03-02

    申请号：US15170154

    申请日：2016-06-01

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Chun-Wen Cheng ,  Chia-Hua Chu ,  Jung-Huei Peng

    IPC分类号： B81C1/00 ,  B81B7/00

    CPC分类号： B81C1/00238 ,  B81B3/001 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/0132 ,  B81C2203/035 ,  B81C2203/037 ,  B81C2203/0792 ,  H01L2224/16

    摘要： The present disclosure relates an integrated chip having one or more MEMS devices. In some embodiments, the integrated chip has a carrier substrate with one or more cavities disposed within a first side of the carrier substrate. A dielectric layer is disposed between the first side of the carrier substrate and a first side of a micro-electromechanical system (MEMS) substrate. The dielectric layer has sidewalls that are laterally set back from sidewalls of openings extending through the MEMs substrate to the one or more cavities. A bonding structure, including an intermetallic compound having a plurality of metallic elements, abuts a second side of the MEMS substrate and is electrically connected to a metal interconnect layer within a dielectric structure disposed over a CMOS substrate.

    摘要翻译： 本公开涉及具有一个或多个MEMS器件的集成芯片。 在一些实施例中，集成芯片具有载体衬底，其具有设置在载体衬底的第一侧内的一个或多个空腔。 电介质层设置在载体衬底的第一侧和微机电系统（MEMS）衬底的第一侧之间。 电介质层具有侧壁，该侧壁从延伸穿过MEM衬底的开口的侧壁横向设置到一个或多个空腔。 包括具有多个金属元素的金属间化合物的接合结构邻接在MEMS基板的第二面上，并且电连接到设置在CMOS基板上的电介质结构内的金属互连层。

    INTEGRATED BIOSENSOR
    63.
    发明申请
    INTEGRATED BIOSENSOR 有权
    集成生物传感器

    公开(公告)号：US20170016851A1

    公开(公告)日：2017-01-19

    申请号：US15277108

    申请日：2016-09-27

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Chun-Wen Cheng ,  Fei-Lung Lai ,  Chia-Hua Chu ,  Yi-Hsien Chang ,  Hsin-Chieh Huang

    IPC分类号： G01N27/414 ,  H01L23/522 ,  H01L23/528 ,  H01L21/48

    CPC分类号： G01N27/4148 ,  G01N27/4145 ,  H01L21/486 ,  H01L23/5226 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present disclosure relates to an integrated chip having an integrated bio-sensor with horizontal and vertical sensing surfaces. In some embodiments, the integrated chip has a sensing device disposed within a substrate, and a lower metal wire over the substrate and electrically coupled to the sensing device. First and second metal vias are arranged on the lower metal wire at locations set back from sidewalls of the lower metal wire, and first and second upper metal wires respectively cover top surfaces of the first and second metal vias. A dielectric structure surrounds the lower metal wire, the first and second metal vias, and the first and second upper metal wires. A sensing well has sensing surfaces that extend along an upper surface of the lower metal wire and along sidewalls of the first and second metal vias and the first and second upper metal wires.

    摘要翻译： 本公开涉及具有具有水平和垂直感测表面的集成生物传感器的集成芯片。 在一些实施例中，集成芯片具有设置在衬底内的感测装置，以及位于衬底上的电子耦合到感测装置的下部金属线。 第一和第二金属通孔设置在下金属线上，从下金属线的侧壁设置的位置，第一和第二上金属线分别覆盖第一和第二金属通孔的顶表面。 电介质结构围绕下金属线，第一和第二金属通孔以及第一和第二上金属线。 感测井具有沿着下金属线的上表面并且沿着第一和第二金属通孔以及第一和第二上金属线的侧壁延伸的感测表面。

    Monolithic complementary metal-oxide semiconductor (CMOS)-integrated silicon microphone
    65.
    发明授权
    Monolithic complementary metal-oxide semiconductor (CMOS)-integrated silicon microphone 有权
    单片互补金属氧化物半导体（CMOS） - 集成硅麦克风

    公开(公告)号：US09462402B2

    公开(公告)日：2016-10-04

    申请号：US14620368

    申请日：2015-02-12

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Chin-Yi Cho ,  Chia-Hua Chu ,  Chun-Wen Cheng ,  Jung-Huei Peng ,  Yao-Te Huang

    IPC分类号： H01R31/00 ,  H04R31/00 ,  H04R19/04

    CPC分类号： H04R1/04 ,  H04R19/005 ,  H04R19/04

    摘要： Some embodiments relate to a manufacturing process that combines a MEMS capacitor of a microelectromechanical systems (MEMS) microphone and an integrated circuit (IC) onto a single substrate. A dielectric is formed over a device substrate. A conductive diaphragm and a conductive backplate are formed within the dielectric, with a sacrificial portion of the dielectric between them. A first recess is formed, which extends through the dielectric to an upper surface of the conductive diaphragm. A second recess is formed, which extends through the substrate and dielectric to a lower surface of the conductive backplate. The sacrificial layer is removed to create an air gap between the conductive diaphragm and the conductive backplate. The air gap joins the first and second recesses to form a cavity that extends continuously through the dielectric and the substrate. The present disclosure is also directed to the semiconductor structure of the MEMS microphone resulting from the manufacturing process.

    摘要翻译： 一些实施例涉及将微机电系统（MEMS）麦克风的MEMS电容器和集成电路（IC）组合到单个基板上的制造工艺。 在器件衬底上形成电介质。 导电隔膜和导电背板形成在电介质内，电介质的牺牲部分在它们之间。 形成第一凹部，其延伸穿过电介质到导电隔膜的上表面。 形成第二凹槽，其延伸穿过基板和电介质到导电背板的下表面。 去除牺牲层以在导电隔膜和导电背板之间产生气隙。 空气间隙连接第一和第二凹部以形成连续延伸通过电介质和基底的空腔。 本公开还涉及由制造过程产生的MEMS麦克风的半导体结构。

    Gas sensor, integrated circuit device using the same, and manufacturing method thereof
    66.
    发明授权
    Gas sensor, integrated circuit device using the same, and manufacturing method thereof 有权
    气体传感器，使用该气体传感器的集成电路装置及其制造方法

    公开(公告)号：US09459224B1

    公开(公告)日：2016-10-04

    申请号：US14788352

    申请日：2015-06-30

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    发明人： Chun-Wen Cheng ,  Chia-Hua Chu ,  Fei-Lung Lai ,  Shiang-Chi Lin

    IPC分类号： H01L27/14 ,  G01N27/16 ,  H01L49/02 ,  H01L21/768 ,  H01L23/31

    CPC分类号： H01L23/3121 ,  G01N27/128 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L28/60

    摘要： A gas sensor includes a substrate, a heater, a dielectric layer, a sensing electrode, and a gas sensitive film. The substrate has a sensing region and a peripheral region surrounding the sensing region, and the substrate further has an opening disposed in the sensing region. The heater is disposed at least above the opening, and the heater has an electrical resistivity larger than about 6×10−8 ohm-m. The dielectric layer is disposed on the heater. The sensing electrode is disposed on the dielectric layer. The gas sensitive film is disposed on the sensing electrode.

    摘要翻译： 气体传感器包括基板，加热器，电介质层，感测电极和气体敏感膜。 衬底具有感测区域和围绕感测区域的周边区域，并且衬底还具有设置在感测区域中的开口。 加热器设置在开口的至少上方，并且加热器的电阻率大于约6×10-8欧姆 - 米。 电介质层设置在加热器上。 感测电极设置在电介质层上。 气体敏感膜设置在感测电极上。

    MULTI-PRESSURE MEMS PACKAGE
    67.
    发明申请
    MULTI-PRESSURE MEMS PACKAGE 有权
    多压力MEMS包装

    公开(公告)号：US20160244325A1

    公开(公告)日：2016-08-25

    申请号：US14629738

    申请日：2015-02-24

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Chun-Wen Cheng ,  Chia-Hua Chu ,  Kuei-Sung Chang

    IPC分类号： B81B7/02 ,  B81C1/00

    CPC分类号： B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2207/095 ,  B81C1/00293 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/0145

    摘要： The present disclosure relates to a microelectromechanical systems (MEMS) package having two MEMS devices with different pressures, and an associated method of formation. In some embodiments, the (MEMS) package includes a device substrate and a cap substrate bonded together. The bonded substrate comprises a first cavity corresponding to a first MEMS device having a first pressure and a second cavity corresponding to a second MEMS device having a different second pressure. The second cavity comprises a major volume and a vent hole connected by a lateral channel disposed between the device substrate and the cap substrate and the vent hole is hermetically sealed by a sealing structure.

    摘要翻译： 本公开涉及具有两个具有不同压力的MEMS器件的微机电系统（MEMS）封装以及相关联的形成方法。 在一些实施例中，（MEMS）封装包括结合在一起的器件衬底和帽衬底。 键合衬底包括对应于具有第一压力的第一MEMS器件的第一腔和对应于具有不同第二压力的第二MEMS器件的第二腔。 第二空腔包括主体积和通过设置在装置基板和盖基板之间的横向通道连接的通气孔，并且通气孔由密封结构气密密封。

    MEMS-CMOS integrated devices, and methods of integration at wafer level
    69.
    发明授权
    MEMS-CMOS integrated devices, and methods of integration at wafer level 有权
    MEMS-CMOS集成器件，以及晶圆级集成方法

    公开(公告)号：US09309109B2

    公开(公告)日：2016-04-12

    申请号：US13936380

    申请日：2013-07-08

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Chia-Hua Chu ,  Chun-Wen Cheng

    IPC分类号： B81C1/00

    CPC分类号： B81C1/00238 ,  B81B2201/0257 ,  B81C1/00222 ,  B81C1/0023 ,  B81C1/00261 ,  B81C1/00301 ,  B81C2203/0792

    摘要： A method for forming an integrated semiconductor device includes providing a first wafer, providing a second wafer, and bonding the first wafer over the second wafer. The first wafer includes a first substrate having a microelectromechanical system (MEMS) device layer. The second wafer includes a second substrate having at least one active device, and at least one interconnect layer over the second substrate. The MEMS device layer is connected with the at least one interconnect layer. The method further includes forming at least one conductive plug through the first substrate and the MEMS device layer and inside the at least one interconnect layer, etching the second substrate and the at least one interconnect layer to form a cavity extending from a surface of the second substrate to the MEMS device layer, and etching the first substrate and the MEMS device layer to form a MEMS device interfacing with the cavity.

    摘要翻译： 一种用于形成集成半导体器件的方法包括提供第一晶片，提供第二晶片，以及将第一晶片接合在第二晶片上。 第一晶片包括具有微机电系统（MEMS）器件层的第一衬底。 第二晶片包括具有至少一个有源器件的第二衬底和在第二衬底上的至少一个互连层。 MEMS器件层与至少一个互连层连接。 该方法还包括通过第一衬底和MEMS器件层和至少一个互连层内部形成至少一个导电插塞，蚀刻第二衬底和至少一个互连层以形成从第二衬底的表面延伸的空腔 衬底到MEMS器件层，并蚀刻第一衬底和MEMS器件层，以形成与腔体接合的MEMS器件。

    CMOS-MEMS integrated flow for making a pressure sensitive transducer
    70.
    发明授权
    CMOS-MEMS integrated flow for making a pressure sensitive transducer 有权
    用于制造压敏传感器的CMOS-MEMS集成流

    公开(公告)号：US09254997B2

    公开(公告)日：2016-02-09

    申请号：US14013080

    申请日：2013-08-29

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Chun-Wen Cheng ,  Kai-Chih Liang ,  Chia-Hua Chu

    IPC分类号： H01L29/66 ,  B81C1/00

    CPC分类号： B81C1/00238 ,  B81B2201/0264

    摘要： A sensor is made up of two substrates which are adhered together. A first substrate includes a pressure-sensitive micro-electrical-mechanical (MEMS) structure and a conductive contact structure that protrudes outwardly beyond a first face of the first substrate. A second substrate includes a complementary metal oxide semiconductor (CMOS) device and a receiving structure made up of sidewalls that meet a conductive surface which is recessed from a first face of the second substrate. A conductive bonding material physically adheres the conductive contact structure to the conductive surface and electrically couples the MEMS structure to the CMOS device.

    摘要翻译： 传感器由粘合在一起的两个基板组成。 第一衬底包括压敏微电机械（MEMS）结构和向外突出超过第一衬底的第一面的导电接触结构。 第二基板包括互补金属氧化物半导体（CMOS）器件和由侧壁构成的接收结构，所述接收结构满足从第二基板的第一面凹入的导电表面。 导电接合材料将导电接触结构物理地粘附到导电表面并将MEMS结构电耦合到CMOS器件。