发明授权
US09459224B1 Gas sensor, integrated circuit device using the same, and manufacturing method thereof
有权
气体传感器，使用该气体传感器的集成电路装置及其制造方法
- 专利标题： Gas sensor, integrated circuit device using the same, and manufacturing method thereof
- 专利标题（中）： 气体传感器，使用该气体传感器的集成电路装置及其制造方法
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申请号： US14788352申请日： 2015-06-30
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公开(公告)号： US09459224B1公开(公告)日： 2016-10-04
- 发明人: Chun-Wen Cheng , Chia-Hua Chu , Fei-Lung Lai , Shiang-Chi Lin
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Maschoff Brennan
- 主分类号： H01L27/14
- IPC分类号： H01L27/14 ; G01N27/16 ; H01L49/02 ; H01L21/768 ; H01L23/31
摘要：
A gas sensor includes a substrate, a heater, a dielectric layer, a sensing electrode, and a gas sensitive film. The substrate has a sensing region and a peripheral region surrounding the sensing region, and the substrate further has an opening disposed in the sensing region. The heater is disposed at least above the opening, and the heater has an electrical resistivity larger than about 6×10−8 ohm-m. The dielectric layer is disposed on the heater. The sensing electrode is disposed on the dielectric layer. The gas sensitive film is disposed on the sensing electrode.
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