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    Semiconductor devices and methods for manufacturing the same
    61.
    发明授权
    Semiconductor devices and methods for manufacturing the same 有权

    公开(公告)号：US10242984B2

    公开(公告)日：2019-03-26

    申请号：US15614911

    申请日：2017-06-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Panjae Park ,  Sutae Kim ,  Donghyun Kim ,  Ha-Young Kim ,  Jung-ho Do ,  Sunyoung Park ,  Sanghoon Baek ,  Jaewan Choi

    IPC: H01L27/02 ,  H01L27/092 ,  H01L21/8238

    Abstract: According to example embodiments, a semiconductor device and a method for manufacturing the same are provided, the semiconductor device includes a substrate including a PMOSFET region and an NMOSFET region, a first gate electrode and a second gate electrode on the PMOSFET region, a third gate electrode and a fourth gate electrode on the NMOSFET region, and a first contact and a second contact connected to the first gate electrode and the fourth gate electrode, respectively. The first to fourth gate cut electrodes define a gate cut region that passes between the first and third gate electrodes and between the second and fourth gate electrodes. A portion of each of the first and second contacts overlaps with the gate cut region when viewed from a plan view.

    Semiconductor device and fabricating method thereof
    65.
    发明授权
    Semiconductor device and fabricating method thereof 有权
    半导体器件及其制造方法

    公开(公告)号：US09117910B2

    公开(公告)日：2015-08-25

    申请号：US14313435

    申请日：2014-06-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Heedon Jeong ,  Jae Yup Chung ,  Heesoo Kang ,  Donghyun Kim ,  Sanghyuk Hong ,  Soohun Hong

    IPC: H01L29/66 ,  H01L29/78

    CPC classification number: H01L21/823431 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/28518 ,  H01L21/32139 ,  H01L21/823418 ,  H01L21/823437 ,  H01L27/0886 ,  H01L29/66545 ,  H01L29/7831 ,  H01L29/7855

    Abstract: A semiconductor device includes a fin region with long and short sides, a first field insulating layer including a top surface lower than that of the fin region and adjacent to a side surface of the short side of the fin region, a second field insulating layer including a top surface lower than that of the fin region and adjacent to a side surface of the long side of the fin region, an etch barrier pattern on the first field insulating layer, a first gate on the fin region and the second field insulating layer to face a top surface of the fin region and side surfaces of the long sides of the fin region. A second gate is on the etch barrier pattern overlapping the first field insulating layer. A source/drain region is between the first gate and the second gate, in contact with the etch barrier pattern.

    Abstract translation: 半导体器件包括具有短边和短边的鳍片区域，第一场绝缘层，其包括比翅片区域低的顶表面，并且与鳍片区域的短边的侧表面相邻;第二场绝缘层，包括 与翅片区域相比较靠近散热片区域的长边侧表面的顶表面，第一场绝缘层上的蚀刻阻挡图案，鳍状区域上的第一栅极和第二场绝缘层， 面对翅片区域的顶表面和翅片区域的长边的侧表面。 第二栅极位于与第一场绝缘层重叠的蚀刻阻挡图案上。 源极/漏极区在第一栅极和第二栅极之间，与蚀刻阻挡图案接触。

    METHOD AND APPARATUS FOR HANDOVER BETWEEN HETEROGENEOUS NETWORKS
    66.
    发明申请
    METHOD AND APPARATUS FOR HANDOVER BETWEEN HETEROGENEOUS NETWORKS 审中-公开
    异构网络之间切换的方法和装置

    公开(公告)号：US20130128864A1

    公开(公告)日：2013-05-23

    申请号：US13679614

    申请日：2012-11-16

    Applicant: Samsung Electronics Co., Ltd

    Inventor： Donghyun Kim

    IPC: H04W36/14

    CPC classification number: H04W36/14 ,  H04W36/0022

    Abstract: Provided are a handover method between heterogeneous networks and an apparatus thereof. The handover method between heterogeneous networks includes receiving a handover request message indicating a handover request from an evolved Node B (eNB) to the heterogeneous network, transmitting a first indirect data forwarding tunnel request requesting generation of an indirect data forwarding tunnel between the heterogeneous networks to an enhanced Packet Data Gateway (ePDG) when the handover request message is received, receiving ePDG address information of a tunneling target ePDG from the ePDG, transmitting a second indirect data forwarding tunnel request including the ePDG address information to a serving gateway, receiving S-GW address information from the serving gateway, and transmitting a handover command including the S-GW address information to the eNB. The method can prevent data from being lost during handover procedure between heterogeneous networks.

    Abstract translation: 提供了异构网络及其装置之间的切换方法。 异构网络之间的切换方法包括从演进节点B（eNB）向异构网络接收指示切换请求的切换请求消息，发送请求在异构网络之间生成间接数据转发隧道的第一间接数据转发隧道请求，以 当接收到切换请求消息时，增强分组数据网关（ePDG），从ePDG接收隧道目标ePDG的ePDG地址信息，向服务网关发送包含ePDG地址信息的第二间接数据转发隧道请求， GW地址信息，并向eNB发送包含S-GW地址信息的切换命令。 该方法可以防止异构网络之间的切换过程中的数据丢失。

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