公开(公告)号：US20210343321A1

公开(公告)日：2021-11-04

申请号：US16861869

申请日：2020-04-29

申请人： Regents of the University of Minnesota

发明人： Jian-Ping Wang ,  Delin Zhang ,  Protyush Sahu

IPC分类号： G11C11/16 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  G11C11/18

摘要： A magnetic device may include a layer stack. The layer stack may include a first ferromagnetic layer; a spacer layer on the first ferromagnetic layer; a second ferromagnetic layer on the spacer layer; and a dielectric barrier layer on the second ferromagnetic layer. In some examples, the layer stack may also include an additional ferromagnetic layer and an additional spacer layer. The magnetic device also may include a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field.

公开(公告)号：US20200279597A1

公开(公告)日：2020-09-03

申请号：US16803454

申请日：2020-02-27

申请人： Regents of the University of Minnesota

发明人： Jian-Ping Wang ,  Sachin S. Sapatnekar ,  Ulya R. Karpuzcu ,  Zhengyang Zhao ,  Masoud Zabihi ,  Michael Salonik Resch ,  Zamshed I. Chowdhury ,  Thomas Peterson

IPC分类号： G11C11/16

摘要： A logic-memory cell includes a spin-orbit torque device having first, second and third terminals configured such that current between the second and third terminals is capable of changing a resistance between the first and second terminals. In the cell, a first transistor is connected between a logic connection line and the first terminal of the spin-orbit torque device and a second transistor is connected between the logic connection line and the third terminal of the spin-orbit torque device.

公开(公告)号：US10586579B2

公开(公告)日：2020-03-10

申请号：US16032716

申请日：2018-07-11

申请人： Regents of the University of Minnesota ,  Carnegie Mellon University

发明人： Jian-Ping Wang ,  Delin Zhang ,  Sara A. Majetich ,  Mukund Bapna

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  B82Y25/00 ,  H01L27/22

摘要： A magnetic device may include a layer stack. The layer stack may include a first ferromagnetic layer; a non-magnetic spacer layer on the first ferromagnetic layer, where the non-magnetic spacer layer comprises at least one of Ru, Ir, Ta, Cr, W, Mo, Re, Hf, Zr, or V; a second ferromagnetic layer on the non-magnetic spacer layer; and an oxide layer on the second ferromagnetic layer. The magnetic device also may include a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field or a current. A thickness and composition of the non-magnetic spacer layer may be selected to enable a switching direction of the magnetic orientation of the second ferromagnetic layer to be controlled by a sign of the bias voltage.

公开(公告)号：US10529775B2

公开(公告)日：2020-01-07

申请号：US16374925

申请日：2019-04-04

申请人： Regents of the University of Minnesota

发明人： Jian-Ping Wang ,  Yang Lv ,  Mahdi Jamali

IPC分类号： G11C11/00 ,  H01L27/22 ,  G11C11/16 ,  H03K19/18 ,  H01L43/04 ,  G11C11/18 ,  H03K19/177 ,  H01L43/08 ,  H01L43/10

摘要： This disclosure describes an example device that includes a first contact line, a second contact line, a spin-orbital coupling channel, and a magnet. The spin-orbital coupling channel is coupled to, and is positioned between, the first contact line and second contact line. The magnet is coupled to the spin-orbital coupling channel and positioned between the first contact line and the second contact line. A resistance of the magnet and spin-orbital coupling channel is a unidirectional magnetoresistance.

公开(公告)号：US20190295617A1

公开(公告)日：2019-09-26

申请号：US16032716

申请日：2018-07-11

申请人： Regents of the University of Minnesota ,  Carnegie Mellon University

发明人： Jian-Ping Wang ,  Delin Zhang ,  Sara A. Majetich ,  Mukund Bapna

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02

摘要： A magnetic device may include a layer stack. The layer stack may include a first ferromagnetic layer; a non-magnetic spacer layer on the first ferromagnetic layer, where the non-magnetic spacer layer comprises at least one of Ru, Ir, Ta, Cr, W, Mo, Re, Hf, Zr, or V; a second ferromagnetic layer on the non-magnetic spacer layer; and an oxide layer on the second ferromagnetic layer. The magnetic device also may include a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field or a current. A thickness and composition of the non-magnetic spacer layer may be selected to enable a switching direction of the magnetic orientation of the second ferromagnetic layer to be controlled by a sign of the bias voltage.

公开(公告)号：US10347467B2

公开(公告)日：2019-07-09

申请号：US15243689

申请日：2016-08-22

申请人： Regents of the University of Minnesota

发明人： Jian-Ping Wang ,  Patrick Quarterman ,  Jianxin Zhu

IPC分类号： H01F41/30 ,  H01J37/32 ,  H01L29/82 ,  H01L43/08 ,  H01J37/317 ,  H01L21/311 ,  H01L21/3213

摘要： In some examples, a method including depositing a functional layer over a substrate; depositing a granular layer over the functional layer, the granular layer including a first material defining a plurality of grains separated by a second material defining grain boundaries of the plurality of grains; removing the second material from the granular layer such that the plurality of grains of the granular layer define a hard mask layer on the functional layer; and removing, via reactive ion etching with a carrier gas, portions of the functional layer not masked by the hard mask layer, wherein the carrier gas comprises a gas with an atomic number less than an atomic number of argon.

公开(公告)号：US20180254836A1

公开(公告)日：2018-09-06

申请号：US15972357

申请日：2018-05-07

申请人： Regents of the University of Minnesota

发明人： Mo Li ,  Jian-Ping Wang

IPC分类号： H04B10/80 ,  H04B10/67 ,  H04B10/532

CPC分类号： H04B10/801 ,  H04B10/532 ,  H04B10/671

摘要： Techniques are described for data transfer in spin-based systems where digital bit values are represented by magnetization states of magnetoresistive devices rather than voltages or currents. For data transmission, a spin-based signal is converted to an optical signal and transmitted via an optical transport. For data reception, the optical signal is received via the optical transport and converted back to a spin-based signal. Such data transfer may not require an intervening conversion of the spin-based signal to charge-based signal that relies on voltages or currents to represent digital bit values. In addition, techniques are described to use magnetoresistive devices to control the amount of current or voltage that is delivered, where the magnetization state of the magnetoresistive device is set by an optical signal.

公开(公告)号：US20180166500A1

公开(公告)日：2018-06-14

申请号：US15839081

申请日：2017-12-12

申请人： Regents of the University of Minnesota

发明人： Jian-Ping Wang ,  Yang Lv ,  Mahdi Jamali

IPC分类号： H01L27/22 ,  G11C11/16 ,  G11C11/18 ,  H01L43/04 ,  H03K19/177 ,  H03K19/18

CPC分类号： H01L27/224 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/22 ,  H01L43/04 ,  H03K19/177 ,  H03K19/1776 ,  H03K19/18

摘要： This disclosure describes an example device that includes a first contact line, a second contact line, a spin-orbital coupling channel, and a magnet. The spin-orbital coupling channel is coupled to, and is positioned between, the first contact line and second contact line. The magnet is coupled to the spin-orbital coupling channel and positioned between the first contact line and the second contact line. A resistance of the magnet and spin-orbital coupling channel is a unidirectional magnetoresistance.

公开(公告)号：US20180100227A1

公开(公告)日：2018-04-12

申请号：US15840747

申请日：2017-12-13

申请人： Regents of the University of Minnesota ,  UT-BATTELLE, LLC

发明人： Michael P. Brady ,  Orlando Rios ,  Yanfeng Jiang ,  Gerard M. Ludtka ,  Craig A. Bridges ,  Jian-Ping Wang ,  Xiaowei Zhang ,  Lawrence F. Allard ,  Edgar Lara-Curzio

IPC分类号： C23C8/26 ,  C21D6/00 ,  C21D1/26 ,  C22C38/00 ,  C23C28/00

CPC分类号： C23C8/26 ,  C01B21/0622 ,  C01P2002/72 ,  C01P2006/42 ,  C21D1/26 ,  C21D6/00 ,  C22C33/00 ,  C22C38/00 ,  C22C38/001 ,  C23C28/322 ,  C23C28/34 ,  H01F1/047 ,  H01F1/065

摘要： A method may include annealing a material including iron and nitrogen in the presence of an applied magnetic field to form at least one Fe16N2 phase domain. The applied magnetic field may have a strength of at least about 0.2 Tesla (T).

公开(公告)号：US20170186518A1

公开(公告)日：2017-06-29

申请号：US15129439

申请日：2015-03-26

申请人： REGENTS OF THE UNIVERSITY OF MINNESOTA ,  UT-BATTELLE, LLC ,  UNIVERSITY OF TENNESSEE RESEARCH FOUNDATION

发明人： Jian-Ping Wang ,  Yanfeng Jiang ,  Craig A. Bridges ,  Michael Brady ,  Orlando Rios ,  Roberta A. Meisner ,  Lawrence F. Allard ,  Edgar Lara-Curzio ,  Shihai He

IPC分类号： H01F1/047 ,  H01F1/06 ,  C23C14/16 ,  C23C14/34 ,  C23C14/56 ,  C23C14/06 ,  H01F1/00 ,  C23C14/00

CPC分类号： H01F1/047 ,  B22F1/0018 ,  C22C38/001 ,  C22C38/002 ,  C22C2202/02 ,  C23C14/0036 ,  C23C14/0605 ,  C23C14/165 ,  C23C14/185 ,  C23C14/3414 ,  C23C14/3464 ,  C23C14/566 ,  C23C14/568 ,  C23C14/5806 ,  C23C14/586 ,  H01F1/0054 ,  H01F1/065 ,  H01F41/0253

摘要： The disclosure describes techniques for forming nanoparticles including Fe16N2 phase. In some examples, the nanoparticles may be formed by first forming nanoparticles including iron, nitrogen, and at least one of carbon or boron. The carbon or boron may be incorporated into the nanoparticles such that the iron, nitrogen, and at least one of carbon or boron are mixed. Alternatively, the at least one of carbon or boron may be coated on a surface of a nanoparticle including iron and nitrogen. The nano particle including iron, nitrogen, and at least one of carbon or boron then may be annealed to form at least one phase domain including at least one of Fe16N2, Fe16(NB)2, Fe16(NC)2, or Fe16(NCB)2.