Photonic device structure and method of manufacture
    62.
    发明授权
    Photonic device structure and method of manufacture 有权
    光子器件结构及制造方法

    公开(公告)号:US09568674B2

    公开(公告)日:2017-02-14

    申请号:US14662524

    申请日:2015-03-19

    Abstract: Disclosed method and apparatus embodiments provide a photonic device with optical isolation from a supporting substrate. A generally rectangular cavity in cross section is provided below an element of the photonic device and the element may be formed from a ledge of the supporting substrate which is over the cavity.

    Abstract translation: 公开的方法和设备实施例提供了一种具有与支撑衬底的光学隔离的光子器件。 在光子器件的元件的下方提供横截面的大致矩形的空腔,并且元件可以由在空腔上的支撑衬底的凸缘形成。

    METHODS OF FABRICATING MEMORY DEVICES HAVING CHARGED SPECIES AND METHODS OF ADJUSTING FLATBAND VOLTAGE IN SUCH MEMORY DEVICES
    70.
    发明申请
    METHODS OF FABRICATING MEMORY DEVICES HAVING CHARGED SPECIES AND METHODS OF ADJUSTING FLATBAND VOLTAGE IN SUCH MEMORY DEVICES 有权
    制造具有充电物种的存储器件的方法和在这样的存储器件中调整平面电压的方法

    公开(公告)号:US20150115349A1

    公开(公告)日:2015-04-30

    申请号:US14588659

    申请日:2015-01-02

    Inventor: Roy Meade

    Abstract: Methods for fabricating memory devices having charged species, and methods for adjusting flatband voltages in such memory devices. In one such method, a dielectric material is formed adjacent to a semiconductor. A charged species is introduced into the dielectric material, wherein the charged species has an energy barrier in a range of greater than about 0.5 eV to about 3.0 eV. A control gate is formed adjacent to the dielectric material. A flatband voltage of the memory device can be adjusted by moving the charged species to different levels within the dielectric material, thus programming different states into the device.

    Abstract translation: 用于制造具有带电物种的存储器件的方法,以及用于调节这些存储器件中的扁平带电压的方法。 在一种这样的方法中,与半导体相邻地形成电介质材料。 将电荷物质引入电介质材料中,其中带电物质具有大于约0.5eV至约3.0eV范围内的能量势垒。 控制栅极与电介质材料相邻地形成。 可以通过将电荷种类移动到介电材料内的不同水平来调节存储器件的扁平带电压,从而将不同的状态编程到器件中。

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