公开(公告)号：US06797340B2

公开(公告)日：2004-09-28

申请号：US10268195

申请日：2002-10-10

申请人： Hongbin Fang ,  Hyung-Suk A. Yoon ,  Ken Kaung Lai ,  Chi Chung Young ,  James Horng ,  Ming XI ,  Michael X. Yang ,  Hua Chung

发明人： Hongbin Fang ,  Hyung-Suk A. Yoon ,  Ken Kaung Lai ,  Chi Chung Young ,  James Horng ,  Ming XI ,  Michael X. Yang ,  Hua Chung

IPC分类号： C23C800

CPC分类号： C23C16/06 ,  C23C16/02 ,  C23C16/0218 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/08 ,  C23C16/16 ,  C23C16/45525

摘要： A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.

公开(公告)号：US6079353A

公开(公告)日：2000-06-27

申请号：US50228

申请日：1998-03-28

申请人： David Leksell ,  Ming Xi Chan ,  Joseph P. Ellul ,  Jeanne L. Luce ,  David T. Ryan ,  Iqbal A. Shareef ,  Chung J. Lee ,  Giovanni Antonio Foggiato

发明人： David Leksell ,  Ming Xi Chan ,  Joseph P. Ellul ,  Jeanne L. Luce ,  David T. Ryan ,  Iqbal A. Shareef ,  Chung J. Lee ,  Giovanni Antonio Foggiato

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  C23C16/00

CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/45563

摘要： This invention relates to the design of apparatus for processing electronic devices, including equipment for chemical vapor deposition. The new designs of gas separator plates, their configuration, and the regulation of gas flows through the system provides control over the pattern of precursor gas flow away from the separation plates, thereby decreasing the amount of byproducts that are deposited on the plates and throughout the reactor. New designs for shaping other surfaces of the dispersion head reduces contamination of those elements, and new designs for chamber panels decrease the deposition of byproducts on those surfaces, as well as other elements of the reactor. Decreasing deposition of byproducts increases the amount of thin film, and the quality of the film which can be deposited without requiring the system to be shut down. This increases the throughput of products in the deposition process, thereby increasing the efficiency of electronic device manufacture and lowering the cost.

摘要翻译： 本发明涉及用于处理电子设备的装置的设计，包括用于化学气相沉积的设备。 气体分离器板的新设计，其结构和通过系统的气体流量的调节提供了控制离开分离板的前体气体流动的模式，从而减少了沉积在板上和整个过程中的副产物的量 反应堆。 用于成型分散头的其它表面的新设计减少了这些元件的污染，并且用于室板的新设计降低了在那些表面上以及反应器的其它元件的副产物的沉积。 副产物的沉积减少增加了薄膜的量，以及可以在不需要系统关闭的情况下沉积的膜的质量。 这增加了沉积工艺中产品的生产量，从而提高了电子设备制造的效率并降低了成本。

公开(公告)号：US6066836A

公开(公告)日：2000-05-23

申请号：US717780

申请日：1996-09-23

申请人： Steven Aihua Chen ,  Henry Ho ,  Mei Chang ,  Ming Xi ,  Chen-An Chen ,  Chiliang Chen

发明人： Steven Aihua Chen ,  Henry Ho ,  Mei Chang ,  Ming Xi ,  Chen-An Chen ,  Chiliang Chen

IPC分类号： C23C16/46 ,  F27D99/00 ,  F27B5/14 ,  C23C16/00

CPC分类号： F27D99/0006 ,  C23C16/46 ,  F27D2099/0008

摘要： A resistive heating structure for a processing apparatus such as a chemical vapor deposition chamber. The system includes a resistive heating substrate holder including a support surface and a support shaft, the holder being comprised of a first material. The support surface includes a resistive heating element. The support shaft has a given length, and through bores for allowing a thermocouple to engage the support surface and electrical conductors to couple to the resistive heating element in the support surface. A metallic mounting structure is coupled to the support shaft and secured to the process apparatus to create a sealed environment within the holder and mounting structure to protect the electrical leads and thermocouple from the process environment.

摘要翻译： 用于诸如化学气相沉积室的处理装置的电阻加热结构。 该系统包括电阻加热衬底保持器，其包括支撑表面和支撑轴，该保持器由第一材料构成。 支撑表面包括电阻加热元件。 支撑轴具有给定的长度，并且通过孔允许热电偶接合支撑表面和电导体以耦合到支撑表面中的电阻加热元件。 金属安装结构联接到支撑轴并固定到处理装置以在保持器和安装结构内形成密封环境，以保护电引线和热电偶免受过程环境的影响。

公开(公告)号：US5926743A

公开(公告)日：1999-07-20

申请号：US146080

申请日：1998-09-02

申请人： Ming Xi ,  Kazuhiro Nishina ,  Steve Chen ,  Toshiaki Fujita

发明人： Ming Xi ,  Kazuhiro Nishina ,  Steve Chen ,  Toshiaki Fujita

IPC分类号： C23C16/44 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00 ,  B08B9/00

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  Y10S438/905

摘要： A method and apparatus for removing particles and residue that build up inside a substrate processing system during a substrate processing operation, without overetching system components, is described. One method includes the steps of: flowing an etchant gas comprising chlorine trifluoride (ClF.sub.3), diluted with an inert carrier gas, into a processing chamber after completion of the substrate processing operation. The parts of the system within the chamber with the greatest amount of build-up are preferentially heated to facilitate more extensive cleaning of those parts. Parts of the system within the chamber with less build up are protected from overetching by keeping them about 200.degree. C. cooler than the heavily-deposited parts. Heating the heavily-deposited chamber parts to a temperature of at least about 400.degree. C. allows using a lower concentration of etchant gas for the cleaning process than a lower temperature process would allow. The etchant gas reacts with both particles and residue in the chamber, reducing both particulate-related defects and deposition build-up. Another method includes blanketing lightly-deposited areas of the chamber with a nonreactive gas to displace and dilute the etchant gas from these areas for part of the cleaning process, while heavily-deposited areas are exposed to a higher concentration of the etchant gas for. a longer period of time. The blanketing gas is turned off for another part of the cleaning process so that these areas are also cleaned.

摘要翻译： 描述了在基板处理操作期间在基板处理系统内部积聚的颗粒和残留物的方法和装置，而不用过滤系统部件。 一种方法包括以下步骤：在完成基板处理操作之后，使包含用惰性载气稀释的三氟化氯（ClF 3）的蚀刻剂气体流入处理室。 具有最大累积量的室内的系统部分被优先加热以便于对这些部件进行更广泛的清洁。 室内较少堆积的室内部分系统通过保持其比重沉积部分冷却约200℃来保护免于过蚀刻。 将重沉积的室部件加热到至少约400℃的温度，允许使用较低浓度的蚀刻剂气体用于清洁过程，而不是较低温度过程将允许。 蚀刻剂气体与室中的颗粒和残余物反应，减少了颗粒相关缺陷和沉积物积聚。 另一种方法包括用非反应性气体覆盖室内轻度沉积的区域，以便从这些区域置换和稀释蚀刻剂气体用于部分清洁过程，同时沉积的区域暴露于较高浓度的蚀刻剂气体。 更长的一段时间。 对于清洁过程的另一部分，遮盖气体被关闭，使得这些区域也被清洁。

公开(公告)号：US5837058A

公开(公告)日：1998-11-17

申请号：US680328

申请日：1996-07-12

申请人： Steven Aihua Chen ,  Ming Xi ,  Ruiping Wang

发明人： Steven Aihua Chen ,  Ming Xi ,  Ruiping Wang

IPC分类号： C23C16/44 ,  C23C16/458 ,  H01L21/205 ,  H01L21/683 ,  C23C16/00

CPC分类号： C23C16/4581

摘要： A susceptor with improved resistance to thermal cycling and chemical attack between processing and cleaning cycles. The susceptor comprises a top surface is surrounded by a lip, the lip having a beveled inner side, a top side, an outer side, a first rounded edge between the top side and the outer side, a second rounded edge between the top side and the inner side, and a third rounded edge between the inner side and the top surface. The susceptor comprises a body of graphite covered by a coating of aluminum nitride.

摘要翻译： 具有改善的抗热循环耐受性和在处理和清洁循环之间的化学侵蚀的感受器。 所述感受体包括顶表面，所述顶表面由唇缘包围，所述唇缘具有斜边的内侧，顶侧，外侧，在所述顶侧和外侧之间的第一圆形边缘，在所述顶侧和所述外侧之间的第二圆形边缘， 内侧和内侧和顶表面之间的第三圆形边缘。 感受体包括由氮化铝涂层覆盖的石墨体。

公开(公告)号：US08123860B2

公开(公告)日：2012-02-28

申请号：US12261487

申请日：2008-10-30

申请人： Randhir P. S. Thakur ,  Alfred W. Mak ,  Ming Xi ,  Walter Benjamin Glenn ,  Ahmad A. Khan ,  Ayad A. Al-Shaikh ,  Avgerinos V. Gelatos ,  Salvador P. Umotoy

发明人： Randhir P. S. Thakur ,  Alfred W. Mak ,  Ming Xi ,  Walter Benjamin Glenn ,  Ahmad A. Khan ,  Ayad A. Al-Shaikh ,  Avgerinos V. Gelatos ,  Salvador P. Umotoy

IPC分类号： C23C16/455 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45544 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/45582 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32834 ,  H01L21/6719

摘要： An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.

摘要翻译： 一种用于在半导体衬底上循环沉积薄膜的装置，包括具有气体分配系统的处理室，该气体分配系统具有用于处理气体的独立路径，以及与将所述工艺气体计量到所述室的反应区域的阀的操作同步的排气系统。

公开(公告)号：US08114789B2

公开(公告)日：2012-02-14

申请号：US12846253

申请日：2010-07-29

申请人： Sean M. Seutter ,  Michael X. Yang ,  Ming Xi

发明人： Sean M. Seutter ,  Michael X. Yang ,  Ming Xi

IPC分类号： H01L21/469

CPC分类号： C23C16/45553 ,  C23C16/34 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76844 ,  H01L21/76862

摘要： A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer.

摘要翻译： 公开了一种在衬底上形成材料的方法。 在一个实施例中，该方法包括在设置在等离子体处理室中的衬底上形成氮化钽层，通过将衬底顺序地暴露于钽前体和氮前体，然后通过暴露衬底来降低氮化钽层的氮浓度 等离子体退火工艺。 随后在氮化钽层上沉积含金属的层。

公开(公告)号：US07745333B2

公开(公告)日：2010-06-29

申请号：US12179002

申请日：2008-07-24

申请人： Ken Kaung Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Avgerinos V. Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael X. Yang ,  Hua Chung ,  Jeong Soo Byun

发明人： Ken Kaung Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Avgerinos V. Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael X. Yang ,  Hua Chung ,  Jeong Soo Byun

IPC分类号： H01L21/44

CPC分类号： H01L21/28562 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.

摘要翻译： 在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段 以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。 该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。 在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核 层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

公开(公告)号：US07660644B2

公开(公告)日：2010-02-09

申请号：US11423535

申请日：2006-06-12

申请人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

发明人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

IPC分类号： G06F19/00

CPC分类号： C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

摘要翻译： 描述了用于原子层沉积（ALD）的方法和装置。 该装置包括沉积室和晶片支架。 沉积室被分成两个或更多个彼此一体地连接的沉积区域。 晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

公开(公告)号：US07605083B2

公开(公告)日：2009-10-20

申请号：US12128499

申请日：2008-05-28

申请人： Ken K. Lai ,  Jeong Soo Byun ,  Frederick C. Wu ,  Ramanujapuran A. Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok K. Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred W. Mak ,  Michael X. Yang ,  Ming Xi

发明人： Ken K. Lai ,  Jeong Soo Byun ,  Frederick C. Wu ,  Ramanujapuran A. Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok K. Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred W. Mak ,  Michael X. Yang ,  Ming Xi

IPC分类号： H01L21/44

CPC分类号： C23C16/45525 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 Å, such as about 15 Å. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.

摘要翻译： 本发明的实施例提供了沉积钨材料的方法。 在一个实施例中，提供了一种用于形成复合钨膜的方法，其包括将衬底定位在处理室内，通过在循环中随后将衬底暴露于钨前体和含氢的还原气体，在衬底上形成钨成核层 沉积工艺，以及在等离子体增强化学气相沉积（PE-CVD）工艺期间形成钨体层。 PE-CVD工艺包括将衬底暴露于含有钨前体的沉积气体，同时在钨成核层上沉积钨体层。 在一些实例中，钨成核层的厚度小于约，例如约为15。 在其他实例中，在循环沉积过程中，含有氢气的载气不断地流入处理室。