知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

33 records (took 0.022 seconds)

    Multiple precursor cyclical deposition system
    1.
    发明授权
    Multiple precursor cyclical deposition system 失效
    多前体循环沉积系统

    公开(公告)号：US07396565B2

    公开(公告)日：2008-07-08

    申请号：US10913888

    申请日：2004-08-06

    Applicant: Michael Xi Yang ,  Hyungsuk Alexander Yoon ,  Hui Zhang ,  Hongbin Fang ,  Ming Xi

    Inventor： Michael Xi Yang ,  Hyungsuk Alexander Yoon ,  Hui Zhang ,  Hongbin Fang ,  Ming Xi

    IPC: C23C16/40

    CPC classification number: C23C16/45544 ,  C23C16/45531 ,  C23C16/45561

    Abstract: Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy). In one aspect, the composition of the ternary material layer may be tuned by changing the flow ratio of the second precursor to the third precursor between cycles.

    Abstract translation: 本发明的实施方案涉及利用三种或更多种前体的循环沉积的装置和方法，其中至少两种前体至少部分重叠的衬底结构。 在衬底结构上沉积三元材料层的一个实施例包括提供至少一个循环的气体以沉积三元材料层。 一个周期包括引入第一前体的脉冲，引入第二前体的脉冲，以及引入第三前体的脉冲，其中第二前体的脉冲和第三前体的脉冲至少部分重叠。 在一个方面，三元材料层包括但不限于钨硼硅（W x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x <<） （TaSi x N y），氮化硅（TaSi x N y N y），氮氧化硅（SiO 2） N x Y）和氧化铪氧化铪（HfSi x O y y）。 在一个方面，三元材料层的组成可以通过在循环之间改变第二前体与第三前体的流动比来调节。

    Electroless cobalt alloy deposition process
    5.
    发明申请
    Electroless cobalt alloy deposition process 审中-公开
    无电钴合金沉积工艺

    公开(公告)号：US20050161338A1

    公开(公告)日：2005-07-28

    申请号：US10970839

    申请日：2004-10-21

    Applicant: Hongbin Fang ,  Ramin Emami ,  Timothy Weidman ,  Arulkumar Shanmugasundram

    Inventor： Hongbin Fang ,  Ramin Emami ,  Timothy Weidman ,  Arulkumar Shanmugasundram

    IPC: C23C18/18 ,  C23C18/34 ,  C23C18/50 ,  C25D5/10 ,  H01L21/288 ,  H01L21/768

    CPC classification number: H01L21/288 ,  C23C18/1844 ,  C23C18/34 ,  C23C18/50 ,  H01L21/76849 ,  H01L21/76874

    Abstract: In one embodiment, a method for depositing a cobalt-containing capping layer on a metal layer is provided which includes rinsing the metal layer with a deionized water wetting step, depositing a palladium layer on the metal layer by exposing the metal layer to an electroless activation solution comprising a palladium precursor and an acid, and depositing the cobalt-containing capping layer on the palladium layer by exposing the palladium layer to an electroless cobalt-containing solution comprising a cobalt source, a tungsten source, an oxygen scavenger and a surfactant. Ascorbic acid may be used as the oxygen scavenger. In another embodiment, a composition of an electroless plating solution is provided which includes a cobalt source at a concentration in a range from about 50 mM to about 250 mM, a tungsten source at a concentration in a range from about 10 mM to about 100 mM, a complexing agent at a concentration in a range from about 10 mM to about 200 mM, at least one reductant at a concentration in a range from about 1 mM to about 100 mM, a surfactant at a concentration in a range from about 1 mg/L to about 100 mg/L, and ascorbic acid at a concentration in a range from about 30 mg/L to about 300 mg/L.

    Abstract translation: 在一个实施例中，提供了一种用于在金属层上沉积含钴覆盖层的方法，其包括用去离子水润湿步骤冲洗金属层，通过将金属层暴露于无电激活 包含钯前体和酸的溶液，并通过将钯层暴露于包含钴源，钨源，除氧剂和表面活性剂的无电镀钴溶液中，将钯覆盖层沉积在钯层上。 可以使用抗坏血酸作为除氧剂。 在另一个实施方案中，提供了化学镀溶液的组合物，其包含浓度在约50mM至约250mM范围内的钴源，浓度范围为约10mM至约100mM的钨源 浓度范围为约10mM至约200mM的络合剂，至少一种浓度为约1mM至约100mM的还原剂，浓度为约1mg的表面活性剂 L至约100mg / L，抗坏血酸浓度为约30mg / L至约300mg / L。

    Multiple precursor cyclical depositon system
    6.
    发明申请
    Multiple precursor cyclical depositon system 失效
    多个前体循环保存系统

    公开(公告)号：US20050008779A1

    公开(公告)日：2005-01-13

    申请号：US10913888

    申请日：2004-08-06

    Applicant: Michael Yang ,  Hyungsuk Yoon ,  Hui Zhang ,  Hongbin Fang ,  Ming Xi

    Inventor： Michael Yang ,  Hyungsuk Yoon ,  Hui Zhang ,  Hongbin Fang ,  Ming Xi

    IPC: C23C16/44 ,  C23C16/455 ,  C23C16/00

    CPC classification number: C23C16/45544 ,  C23C16/45531 ,  C23C16/45561

    Abstract: Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy). In one aspect, the composition of the ternary material layer may be tuned by changing the flow ratio of the second precursor to the third precursor between cycles.

    Abstract translation: 本发明的实施方案涉及利用三种或更多种前体的循环沉积的装置和方法，其中至少两种前体至少部分重叠的衬底结构。 在衬底结构上沉积三元材料层的一个实施例包括提供至少一个循环的气体以沉积三元材料层。 一个周期包括引入第一前体的脉冲，引入第二前体的脉冲，以及引入第三前体的脉冲，其中第二前体的脉冲和第三前体的脉冲至少部分重叠。 在一个方面，三元材料层包括但不限于钨硼硅（WBxSiy），氮化硅钛（TiSixNy），氮化钽（TaSixNy），氧氮化硅（SiOxNy）和氧化铪铪（HfSixOy） 。 在一个方面，三元材料层的组成可以通过在循环之间改变第二前体与第三前体的流动比来调节。

    HYBRID HETEROJUNCTION SOLAR CELL FABRICATION USING A METAL LAYER MASK
    9.
    发明申请
    HYBRID HETEROJUNCTION SOLAR CELL FABRICATION USING A METAL LAYER MASK 失效
    使用金属层掩模的混合异相太阳能电池制造

    公开(公告)号：US20100015751A1

    公开(公告)日：2010-01-21

    申请号：US12504193

    申请日：2009-07-16

    Applicant: Timothy W. Weidman ,  Rohit Mishra ,  Michael P. Stewart ,  Yonghwa Chris Cha ,  Kapila P. Wijekoon ,  Hongbin Fang

    Inventor： Timothy W. Weidman ,  Rohit Mishra ,  Michael P. Stewart ,  Yonghwa Chris Cha ,  Kapila P. Wijekoon ,  Hongbin Fang

    IPC: H01L21/28 ,  B05C11/00

    CPC classification number: H01L31/022425 ,  H01L21/67155 ,  H01L31/0236 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/521

    Abstract: Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include the use of various etching and patterning processes that are used to define active regions of the device and regions where the device and/or contact structure is to be located on a surface of a solar cell substrate. The method generally includes the steps of forming one or more layers on a backside of a solar cell substrate to prevent attack of the backside surface of the substrate, and provide a stable supporting surface, when the front side regions of a solar cell are formed. In one embodiment, the one or more layers are a metalized backside contact structure that is formed on the backside of the solar cell substrate. In another embodiment, the one or more layers are a chemical resistant dielectric layer that is formed over the backside of the solar cell substrate.

    Abstract translation: 本发明的实施例考虑使用新颖的处理顺序形成高效太阳能电池来形成太阳能电池装置。 在一个实施例中，所述方法包括使用各种蚀刻和图案化工艺，其用于限定器件的有源区和器件和/或接触结构将位于太阳能电池基板的表面上的区域。 该方法通常包括以下步骤：在太阳能电池基板的背面形成一个或多个层，以防止在形成太阳能电池的前侧区域时衬底的背面发生侵蚀，并提供稳定的支撑表面。 在一个实施例中，一个或多个层是形成在太阳能电池基板的背面上的金属化的背面接触结构。 在另一个实施例中，一个或多个层是形成在太阳能电池基板的背面上的耐化学电介质层。

    Pretreatment for electroless deposition
    10.
    发明授权
    Pretreatment for electroless deposition 有权
    化学沉积预处理

    公开(公告)号：US07256111B2

    公开(公告)日：2007-08-14

    申请号：US10934850

    申请日：2004-09-03

    Applicant: Sergey Lopatin ,  Arulkumar Shanmugasundram ,  Ramin Emami ,  Hongbin Fang

    Inventor： Sergey Lopatin ,  Arulkumar Shanmugasundram ,  Ramin Emami ,  Hongbin Fang

    IPC: H01L21/26 ,  H01L21/42

    CPC classification number: H01L21/02074 ,  H01L21/288 ,  H01L21/67161 ,  H01L21/6723 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76864

    Abstract: Embodiments of the present invention relate to an apparatus and method of annealing substrates in a thermal anneal chamber and/or a plasma anneal chamber before electroless deposition thereover. In one embodiment, annealing in a thermal anneal chamber includes heating the substrate in a vacuum environment while providing a gas, such as noble gases, hydrogen gas, other reducing gases, nitrogen gas, other non-reactive gases, and combinations thereof. In another embodiment, annealing in a plasma chamber comprises plasma annealing the substrate in a plasma, such as a plasma from an argon gas, helium gas, hydrogen gas, and combinations thereof.

    Abstract translation: 本发明的实施例涉及在其之前的无电沉积之前在热退火室和/或等离子体退火室中退火衬底的装置和方法。 在一个实施例中，热退火室中的退火包括在真空环境中加热衬底，同时提供气体，例如惰性气体，氢气，其它还原气体，氮气，其它非反应性气体及其组合。 在另一个实施例中，等离子体室中的退火包括等离子体等离子体等离子体退火，例如来自氩气，氦气，氢气及其组合的等离子体。

Patent Agency Ranking