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    ATOMIC LAYER DEPOSITION APPARATUS
    1.
    发明申请
    ATOMIC LAYER DEPOSITION APPARATUS 有权
    原子层沉积装置

    公开(公告)号：US20120006265A1

    公开(公告)日：2012-01-12

    申请号：US13235855

    申请日：2011-09-19

    申请人： BARRY L. CHIN ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

    发明人： BARRY L. CHIN ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

    IPC分类号： C23C16/455

    CPC分类号： C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

    摘要： A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.

    摘要翻译： 描述了用于原子层沉积（ALD）的方法和装置。 在一个实施例中，一种装置包括具有连续的内部容积的真空室主体，其包括与第二沉积区域间隔开的第一沉积区域，所述室主体具有可操作以最小化第一和第二沉积物之间的气体混合的特征 区域，形成在所述室主体中并且定位成优先地将气体脉冲至所述第一沉积区域的第一气体端口，以使得能够在所述第一沉积区域中执行第一沉积工艺，以及形成在所述室主体中并定位成 优选提供脉冲气体到第二沉积区域以使得能够在第二沉积区域中进行第二沉积工艺。

    Method for depositing tungsten-containing layers by vapor deposition techniques
    3.
    发明授权
    Method for depositing tungsten-containing layers by vapor deposition techniques 有权
    通过气相沉积技术沉积含钨层的方法

    公开(公告)号：US07220673B2

    公开(公告)日：2007-05-22

    申请号：US11461909

    申请日：2006-08-02

    申请人： Ming Xi ,  Ashok Sinha ,  Moris Kori ,  Alfred W. Mak ,  Xinliang Lu ,  Ken Kaung Lai ,  Karl A. Littau

    发明人： Ming Xi ,  Ashok Sinha ,  Moris Kori ,  Alfred W. Mak ,  Xinliang Lu ,  Ken Kaung Lai ,  Karl A. Littau

    IPC分类号： H01L21/44

    CPC分类号： C23C16/0272 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876

    摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten nucleation layer by sequentially exposing a substrate to a boron-containing gas and a tungsten-containing gas within a processing chamber during an atomic layer deposition process, and forming a tungsten bulk layer on the tungsten nucleation layer by exposing the substrate to a processing gas that contains the tungsten-containing gas and a reactive precursor gas within another processing chamber during a chemical vapor deposition process. In one example, the tungsten nucleation layer is deposited on a dielectric material, such as silicon oxide. In another example, the tungsten nucleation layer is deposited on a barrier material, such as titanium or titanium nitride. Other examples provide that the tungsten nucleation layer and the tungsten bulk layer are deposited in the same processing chamber.

    摘要翻译： 在一个实施例中，提供了一种用于在基板上形成含钨材料的方法，其包括通过在原子层中将衬底顺序地暴露于处理室内的含硼气体和含钨气体来形成钨成核层 通过在化学气相沉积工艺期间将衬底暴露于另一处理室内含有含钨气体和反应性前体气体的处理气体，在钨成核层上形成钨体层。 在一个实例中，钨成核层沉积在介电材料如氧化硅上。 在另一个实例中，钨成核层沉积在诸如钛或氮化钛的阻挡材料上。 其他实例提供了钨成核层和钨本体层沉积在相同的处理室中。

    Showerhead with reduced contact area
    4.
    发明授权
    Showerhead with reduced contact area 有权
    淋浴头接触面积减小

    公开(公告)号：US06461435B1

    公开(公告)日：2002-10-08

    申请号：US09603117

    申请日：2000-06-22

    申请人： Karl A. Littau ,  Bevan Vo ,  Salvador P. Umotoy ,  Son N. Trinh ,  Chien-Teh Kao ,  Ken Kaung Lai ,  Bo Zheng ,  Ping Jian ,  Siqing Lu ,  Anzhong Chang

    发明人： Karl A. Littau ,  Bevan Vo ,  Salvador P. Umotoy ,  Son N. Trinh ,  Chien-Teh Kao ,  Ken Kaung Lai ,  Bo Zheng ,  Ping Jian ,  Siqing Lu ,  Anzhong Chang

    IPC分类号： C23C1600

    CPC分类号： C23C16/45565 ,  C23C16/455 ,  H01J37/3244

    摘要： A showerhead for distributing gases in a semiconductor process chamber. In one embodiment, a showerhead comprising a perforated center portion, a mounting portion circumscribing the perforated center portion and a plurality of bosses extending from the mounting portion each having a hole disposed therethrough is provided. Another embodiment of the invention provides a showerhead that includes a mounting portion having a first side circumscribing a perforated center portion. A ring extends from the first side of the mounting portion. A plurality of mounting holes are disposed in the mounting portion radially to either side of the ring. The showerhead provides controlled thermal transfer between the showerhead and chamber lid resulting in less deposition on the showerhead.

    摘要翻译： 用于在半导体处理室中分配气体的喷头。 在一个实施例中，提供了一种喷头，包括穿孔中心部分，围绕穿孔中心部分的安装部分和从安装部分延伸的多个凸起，每个凸起具有穿过其中设置的孔。 本发明的另一个实施例提供了一种喷头，其包括具有围绕穿孔中心部分的第一侧面的安装部分。 环从安装部分的第一侧延伸。 多个安装孔径向地设置在安装部分的环的任一侧。 淋浴头在喷头和室盖之间提供受控的热转印，从而在喷头上沉积较少。

    Atomic layer deposition apparatus
    5.
    发明授权
    Atomic layer deposition apparatus 有权
    原子层沉积装置

    公开(公告)号：US08626330B2

    公开(公告)日：2014-01-07

    申请号：US13235855

    申请日：2011-09-19

    申请人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

    发明人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

    IPC分类号： G06F19/00 ,  C23C16/00

    CPC分类号： C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

    摘要： A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.

    摘要翻译： 描述了用于原子层沉积（ALD）的方法和装置。 在一个实施例中，一种装置包括具有连续的内部容积的真空室主体，其包括与第二沉积区域间隔开的第一沉积区域，所述室主体具有可操作以最小化第一和第二沉积物之间的气体混合的特征 区域，形成在所述室主体中并且定位成优先地将气体脉冲至所述第一沉积区域的第一气体端口，以使得能够在所述第一沉积区域中执行第一沉积工艺，以及形成在所述室主体中并定位成 优选提供脉冲气体到第二沉积区域以使得能够在第二沉积区域中进行第二沉积工艺。

    Pulsed nucleation deposition of tungsten layers
    8.
    发明授权
    Pulsed nucleation deposition of tungsten layers 有权
    钨层的脉冲成核沉积

    公开(公告)号：US07211144B2

    公开(公告)日：2007-05-01

    申请号：US10194629

    申请日：2002-07-12

    申请人： Xinliang Lu ,  Ping Jian ,  Jong Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

    发明人： Xinliang Lu ,  Ping Jian ,  Jong Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

    IPC分类号： C30B25/16

    CPC分类号： H01L21/28562 ,  C23C16/14 ,  C23C16/45523 ,  C23C16/45525 ,  C30B25/02 ,  C30B29/02

    摘要： A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereafter, reaction by-products generated from the tungsten deposition are removed from the process chamber. After the reaction by-products are removed from the process chamber, a flow of the reducing gas is provided to the process chamber to react with residual tungsten-containing precursor remaining therein. Such a deposition process forms tungsten nucleation layers having good step coverage. The sequential deposition process of reacting pulses of the tungsten-containing precursor and the reducing gas, removing reaction by-products, and than providing a flow of the reducing gas to the process chamber may be repeated until a desired thickness for the tungsten nucleation layer is formed.

    摘要翻译： 使用顺序沉积工艺形成钨成核层的方法。 钨成核层通过在处理室中使含钨前体和还原气体的脉冲反应而在基底上沉积钨而形成。 此后，从处理室除去从钨沉积产生的反应副产物。 在从处理室中除去反应副产物之后，将还原气体的流动提供给处理室以与其中剩余的含钨前体反应。 这种沉积工艺形成具有良好阶梯覆盖的钨成核层。 可以重复将含钨前体和还原气体的脉冲反应，除去反应副产物以及向处理室提供还原气体流的顺序沉积过程，直到钨成核层的期望厚度为 形成。