公开(公告)号：US07892602B2

公开(公告)日：2011-02-22

申请号：US11422826

申请日：2006-06-07

申请人： Hua Chung ,  Ling Chen ,  Barry L. Chin

发明人： Hua Chung ,  Ling Chen ,  Barry L. Chin

IPC分类号： C23C16/34

CPC分类号： C23C16/45531 ,  C23C16/34 ,  H01L21/28562 ,  H01L21/76843

摘要： Methods for depositing a metal silicon nitride layer on a substrate during an atomic layer deposition (ALD) process. The methods provide positioning a substrate within a process chamber containing a centralized expanding channel that conically tapers towards and substantially covers the substrate, flowing a process gas into the centralized expanding channel to form a circular flow pattern, exposing the substrate to the process gas having the circular flow pattern, and exposing the substrate sequentially to chemical precursors during an ALD process to form a metal silicon nitride material. In one example, the ALD process provides sequentially pulsing a metal precursor, a nitrogen precursor, and a silicon precursor into the process gas having the circular flow pattern. The metal silicon nitride material may contain tantalum or titanium. In other examples, the process gas or the substrate may be exposed to a plasma.

摘要翻译： 在原子层沉积（ALD）工艺中在衬底上沉积金属氮化硅层的方法。 该方法提供了将处理室中的衬底定位在处理室内，该处理室包含集中的扩展通道，该通道朝向并基本上覆盖衬底呈锥形锥形，将工艺气体流入集中扩展通道以形成圆形流动图案，将衬底暴露于具有 圆形流动图案，并且在ALD工艺期间将衬底依次暴露于化学前体以形成金属氮化硅材料。 在一个实例中，ALD工艺顺序地将金属前体，氮前体和硅前体顺序地引入到具有圆形流动图案的工艺气体中。 金属氮化硅材料可以包含钽或钛。 在其它实例中，工艺气体或衬底可以暴露于等离子体。

公开(公告)号：US20100099270A1

公开(公告)日：2010-04-22

申请号：US12646706

申请日：2009-12-23

申请人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

发明人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

IPC分类号： H01L21/302 ,  G06F17/00 ,  C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

摘要翻译： 描述了用于原子层沉积（ALD）的方法和装置。 该装置包括沉积室和晶片支架。 沉积室被分成两个或更多个彼此一体地连接的沉积区域。 晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

公开(公告)号：US20090053888A1

公开(公告)日：2009-02-26

申请号：US12288540

申请日：2008-10-20

申请人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John C. Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara

发明人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John C. Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara

IPC分类号： H01L21/4763 ,  H01L21/31

CPC分类号： H01L21/02183 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/02266 ,  H01L21/2855 ,  H01L21/318 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876

摘要： A method of depositing a duffusion barrier layer with overlying conductive layer or fill which lowers resistivity of a semiconductor device interconnect. The lower resistivity is achieved by inducing the formation of alpha tantalum within a tantalum-comprising barrier layer.

摘要翻译： 一种用覆盖的导电层或填充物沉积具有降低半导体器件互连电阻率的渗透阻挡层的方法。 通过诱导在含钽隔离层内形成α钽来实现较低的电阻率。

公开(公告)号：US07048837B2

公开(公告)日：2006-05-23

申请号：US10659902

申请日：2003-09-11

申请人： Sasson R. Somekh ,  Marc O. Schweitzer ,  John C. Forster ,  Zheng Xu ,  Roderick C. Mosely ,  Barry L. Chin ,  Howard E. Grunes

发明人： Sasson R. Somekh ,  Marc O. Schweitzer ,  John C. Forster ,  Zheng Xu ,  Roderick C. Mosely ,  Barry L. Chin ,  Howard E. Grunes

IPC分类号： C23C14/35

CPC分类号： C23C14/544 ,  C23C14/046 ,  C23C14/165 ,  C23C14/5833 ,  C23C14/5873 ,  G01N21/68 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/3455 ,  H01L21/2855 ,  H01L21/76814 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while additional material is being sputter deposited onto a substrate. A path positioned within a chamber of the system directs light or other radiation emitted by the plasma to a chamber window or other optical view-port which is protected by a shield against deposition by the conductor material. In one embodiment, the radiation path is folded to reflect plasma light around the chamber shield and through the window to a detector positioned outside the chamber window. Although deposition material may be deposited onto portions of the folded radiation path, in many applications, the deposition material will be sufficiently reflective to permit the emission spectra to be detected by a spectrometer or other suitable detector without significant signal loss. The etching or resputtering may be terminated when the detector detects that an underlying layer has been reached or when some other suitable process point has been reached.

摘要翻译： 可以在溅射反应器系统中控制包括不透明金属导体材料的溅射材料层的等离子体蚀刻或再溅射。 在一个实施例中，溅射沉积层的溅射在材料溅射沉积之后进行，并且另外的材料被溅射沉积到衬底上。 位于系统的腔室内的路径将等离子体发射的光或其他辐射引导到腔室窗口或其他光学视图端口，其被屏蔽物保护以防止被导体材料沉积。 在一个实施例中，辐射路径被折叠以将等离子体光围绕室屏蔽件并且通过窗口反射到位于室窗口外部的检测器。 虽然沉积材料可以沉积在折叠辐射路径的部分上，但是在许多应用中，沉积材料将被充分反射，以允许发射光谱由光谱仪或其它合适的检测器检测，而没有显着的信号损失。 当检测器检测到已经到达下层或者当达到某些其它合适的处理点时，蚀刻或再溅射可以被终止。

公开(公告)号：US06793779B2

公开(公告)日：2004-09-21

申请号：US10369856

申请日：2003-02-20

申请人： Peijun Ding ,  Tony Chiang ,  Barry L. Chin

发明人： Peijun Ding ,  Tony Chiang ,  Barry L. Chin

IPC分类号： C23C1434

CPC分类号： H01L21/76877 ,  H01L21/2855

摘要： A method of filling trenches or vias on a semiconductor workpiece surface with copper using sputtering techniques. A copper wetting layer and a copper fill layer may both be applied by sputtering techniques. The thin wetting layer of copper is applied at a substrate surface temperature ranging between about 20° C. to about 250° C., and subsequently the temperature of the substrate is increased, with the application of the sputtered copper fill layer beginning at above at least about 200° C. and continuing while the substrate temperature is increased to a temperature as high as about 600° C. Preferably the substrate temperature during application of the sputtered fill layer ranges between about 300° C. and about 500° C.

摘要翻译： 使用溅射技术用铜填充半导体工件表面上的沟槽或通孔的方法。 铜浸润层和铜填充层都可以通过溅射技术施加。 在约20℃至约250℃范围内的衬底表面温度下施加铜的薄润湿层，随后随着溅射铜填充层的应用从上方开始施加，衬底的温度升高 至少约200℃，并且在衬底温度升高至高达约600℃的温度下继续进行。优选地，溅射填充层施加期间的衬底温度范围为约300℃至约500℃。

公开(公告)号：US6152074A

公开(公告)日：2000-11-28

申请号：US905166

申请日：1997-08-01

申请人： Marc O. Schweitzer ,  Barry L. Chin ,  Ivo J. Raaijmakers

发明人： Marc O. Schweitzer ,  Barry L. Chin ,  Ivo J. Raaijmakers

IPC分类号： C30B23/08 ,  C23C14/24 ,  C30B23/02 ,  C30B23/06 ,  H01L21/203 ,  C23C14/00

CPC分类号： C23C14/24 ,  C23C14/243 ,  C30B23/02 ,  C30B23/066

摘要： A multi-beam source for deposition of a material on to a substrate with enhanced deposition rate, uniformity and beam directionality. A plurality of orifices are provided in a head unit having a cavity containing a vapor of the deposition material. The cavity and the vapor contained therein are maintained at a high temperature to increase the deposition rate. The orifices are maintained at the same high temperature and act as heated collimators to produce highly directional beams for deposition of materials into high aspect ratio features. When used in jet vapor deposition techniques, an inert gas flow is introduced into the cavity and forced out thereof through the orifices as jets to transport particles of the deposition material to the substrate.

摘要翻译： 一种用于将材料沉积到衬底上的多光束源，具有增强的沉积速率，均匀性和光束方向性。 在具有包含沉积材料的蒸气的空腔的头单元中设置多个孔。 其中容纳的空腔和蒸汽保持在高温以增加沉积速率。 孔保持在相同的高温，并作为加热准直仪，以产生高度定向的光束，用于将材料沉积到高纵横比特征中。 当用于喷射气相沉积技术时，将惰性气体流引入空腔中并将其通过孔口作为喷射流出，以将沉积材料的颗粒输送到基底。

公开(公告)号：US5925411A

公开(公告)日：1999-07-20

申请号：US487789

申请日：1995-06-07

申请人： Everhardus P. van de Ven ,  Eliot K. Broadbent ,  Jeffrey C. Benzing ,  Barry L. Chin ,  Christopher W. Burkhart

发明人： Everhardus P. van de Ven ,  Eliot K. Broadbent ,  Jeffrey C. Benzing ,  Barry L. Chin ,  Christopher W. Burkhart

IPC分类号： C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  H01L21/00 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/31 ,  H01L21/683 ,  H01L21/687

CPC分类号： C23C16/45521 ,  C23C16/04 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/45519 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6838 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

摘要： A platen supports a substrate on an interior platen region during the deposition of materials such as tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition ("CVD") reactor. A deposition control gas composed of a suitable inert gas such as argon or a mixture of inert and reactive gases such as argon and hydrogen is introduced into the CVD reactor. Deposition control gas is preferably introduced through a restrictive opening in a gas orifice surrounding the platen interior region and exits near an edge of the substrate. The restrictive opening accommodates a uniform deposition control gas flow proximate to an edge of the substrate at a pressure greater than reactor pressure near the substrate edge. The deposition control gas substantially prevents process gas access to the substrate edge and backside. In one embodiment, the restrictive opening is formed by placing a restrictive insert within a gas groove surrounding the platen interior region. In another embodiment, the restrictive opening is formed by an exclusion guard substantially uniformly spaced from the edge of the substrate.

摘要翻译： 在化学气相沉积（“CVD”）反应器中，在诸如钨，金属氮化物，其它金属和硅化物的材料沉积期间，压板支撑在内部压板区域上的衬底。 由合适的惰性气体如氩气或惰性气体和反应性气体如氩气和氢气的混合物组成的沉积控制气体被引入到CVD反应器中。 沉积控制气体优选通过围绕压板内部区域的气体孔口中的限制性开口引入并离开基板的边缘附近。 限制开口在靠近基板边缘的压力大于反应器压力的情况下，容纳靠近基板边缘的均匀沉积控制气流。 沉积控制气体基本上防止工艺气体进入衬底边缘和背面。 在一个实施例中，限制性开口通过将限制性插入物放置在围绕压板内部区域的气体槽中而形成。 在另一个实施方案中，限制性开口由与衬底的边缘基本上均匀间隔开的排除保护膜形成。

公开(公告)号：US5843233A

公开(公告)日：1998-12-01

申请号：US485191

申请日：1995-06-07

申请人： Everhardus P. van de Ven ,  Eliot K. Broadbent ,  Jeffrey C. Benzing ,  Barry L. Chin ,  Christopher W. Burkhart ,  Lawrence C. Lane ,  Edward J. McInerney

发明人： Everhardus P. van de Ven ,  Eliot K. Broadbent ,  Jeffrey C. Benzing ,  Barry L. Chin ,  Christopher W. Burkhart ,  Lawrence C. Lane ,  Edward J. McInerney

IPC分类号： C30B25/12 ,  C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  C30B25/14 ,  H01L21/00 ,  H01L21/205 ,  H01L21/285 ,  H01L21/31 ,  H01L21/683 ,  H01L21/687 ,  C23C16/06

CPC分类号： C23C16/45519 ,  C23C16/04 ,  C23C16/455 ,  C23C16/45521 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6838 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

摘要： A platen supports a wafer during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition reactor. A deposition control gas that includes a suitable inert gas such as argon or a mixture of inert and reactant gases such as argon and hydrogen is introduced through a restrictive opening into an ambient in the reactor. An exclusion guard aligned with the platen has an extension extending over a frontside peripheral region of the wafer. Deposition control gas is introduced under the exclusion guard extension and exits through a restrictive opening between the exclusion guard extension and a wafer frontside peripheral region. The restrictive opening provides a uniform pressure of deposition control gas at the edge and frontside of the wafer to prevent deposition on the wafer edge and backside.

摘要翻译： 压板在化学气相沉积反应器中沉积钨，金属氮化物，其它金属和硅化物期间支撑晶片。 包括合适的惰性气体如氩气或惰性气体和反应气体如氩气和氢气的混合物的沉积控制气体通过限制性开口引入反应器中的环境中。 与压板对准的排除保护罩具有在晶片的前侧周边区域上延伸的延伸部。 沉积控制气体被引入排阻护延伸部分，并通过排除保护延伸部和晶片正面周边区域之间的限制开口排出。 限制开口在晶片的边缘和前侧提供均匀的沉积控制气体压力，以防止沉积在晶片边缘和背面。

公开(公告)号：US5769951A

公开(公告)日：1998-06-23

申请号：US591241

申请日：1996-01-17

申请人： Everhardus P. van de Ven ,  Eliot K. Broadbent ,  Jeffrey C. Benzing ,  Barry L. Chin ,  Christopher W. Burkhart ,  Lawrence C. Lane

发明人： Everhardus P. van de Ven ,  Eliot K. Broadbent ,  Jeffrey C. Benzing ,  Barry L. Chin ,  Christopher W. Burkhart ,  Lawrence C. Lane

IPC分类号： C30B25/12 ,  C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  C30B25/14 ,  H01L21/00 ,  H01L21/205 ,  H01L21/285 ,  H01L21/31 ,  H01L21/683 ,  H01L21/687

CPC分类号： C23C16/45519 ,  C23C16/04 ,  C23C16/455 ,  C23C16/45521 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6838 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

摘要： A platen supports a wafer during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition reactor. A deposition control gas that includes a suitable inert gas such as argon or a mixture of inert and reactant gases such as argon and hydrogen is introduced through a restrictive opening into an ambient in the reactor. An exclusion guard aligned with the platen has an extension extending over a frontside peripheral region of the wafer. Deposition control gas is introduced under the exclusion guard extension and exits through a restrictive opening between the exclusion guard extension and a wafer frontside peripheral region. The restrictive opening provides a uniform pressure of deposition control gas at the edge and frontside of the wafer to prevent deposition on the wafer edge and backside.

摘要翻译： 压板在化学气相沉积反应器中沉积钨，金属氮化物，其它金属和硅化物期间支撑晶片。 包括合适的惰性气体如氩气或惰性气体和反应气体如氩气和氢气的混合物的沉积控制气体通过限制性开口引入反应器中的环境中。 与压板对准的排除保护罩具有在晶片的前侧周边区域上延伸的延伸部。 沉积控制气体被引入排阻护延伸部分，并通过排除保护延伸部和晶片正面周边区域之间的限制开口排出。 限制开口在晶片的边缘和前侧提供均匀的沉积控制气体压力，以防止沉积在晶片边缘和背面。

公开(公告)号：US5578532A

公开(公告)日：1996-11-26

申请号：US294514

申请日：1994-08-23

申请人： Everhardus P. van de Ven ,  Eliot K. Broadbent ,  Jeffrey C. Benzing ,  Barry L. Chin ,  Christopher W. Burkhart

发明人： Everhardus P. van de Ven ,  Eliot K. Broadbent ,  Jeffrey C. Benzing ,  Barry L. Chin ,  Christopher W. Burkhart

IPC分类号： C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  H01L21/00 ,  H01L21/683 ,  H01L21/687 ,  C23C16/00 ,  C23C14/04

CPC分类号： C23C16/04 ,  C23C16/455 ,  C23C16/45519 ,  C23C16/45521 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67201 ,  H01L21/6838 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  Y10T29/41

摘要： A process comprising a platen having a substrate contact supporting a substrate during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition reactor. A deposition control gas composed of a suitable inert gas such as argon or a mixture of inert and reactant gases such as argon and hydrogen is introduced through a restrictive opening into an ambient in the reactor. An exclusion guard is positioned adjacent to the substrate contact and has an extension extending over a frontside peripheral region of the substrate. Deposition control gas is introduced through an opening beneath the exclusion guard extension and exits through a restrictive opening between the exclusion guard extension and a substrate frontside peripheral region. The restrictive opening provides a uniform deposition control gas flow at a pressure greater than reactor ambient pressure and process gas pressure impinging on the frontside of the substrate. Deposition control gas flows uniformly through the restrictive opening across the entire substrate frontside peripheral region, thereby preventing deposition on the substrate edge and backside.

摘要翻译： 一种方法，包括在化学气相沉积反应器中沉积钨，金属氮化物，其它金属和硅化物期间具有支撑衬底的衬底接触的压板。 由合适的惰性气体如氩气或惰性气体和反应气体如氩气和氢气的混合物组成的沉积控制气体通过限制性开口引入反应器中的环境中。 排除保护件定位成与衬底接触相邻，并且具有在衬底的前侧周边区域上延伸的延伸部。 沉积控制气体通过排除保护延伸部下面的开口引入，并通过排除保护延伸部和衬底前侧周边区域之间的限制性开口离开。 限制开口提供均匀的沉积控制气流，其压力大于反应器环境压力和冲击衬底前侧的工艺气体压力。 沉积控制气体均匀地流过穿过整个基板前侧周边区域的限制开口，从而防止在基板边缘和背面上的沉积。