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公开(公告)号：US06548124B1
公开(公告)日：2003-04-15
申请号：US09531036
申请日：2000-03-20
申请人： Paul Brumer , Bijoy Dey , Moshe Shapiro
发明人： Paul Brumer , Bijoy Dey , Moshe Shapiro
IPC分类号： C23C800
CPC分类号： G21K1/00 , B82B3/00 , B82Y30/00 , B82Y40/00 , C23C14/048 , G03F1/78 , G03F7/001 , G03F7/2051 , G03F7/70375 , Y10S977/887 , Y10S977/89 , Y10S977/896 , Y10S977/901 , Y10S977/951
摘要： A method for the controlled nanometer-scale deposition of molecules on a surface, by means of coherently controlled optical focusing. The coherent control is conveniently performed by inducing a linear superposition of molecular bound states, by means of electromagnetic fields supplied by an applied laser beam. The optical focusing is conveniently performed by passing a beam of such suitably prepared molecules through another electromagnetic field supplied by a standing wave induced by two interacting laser beams. Altering the characteristics of the laser beams alters the forces operating on the molecules, thus directing them to the desired position on the surface. Selection of the frequencies, intensities, and relative phases of the electromagnetic fields, as well as the geometry of the interaction between the molecular beam and the electromagnetic fields, enables deposition of aperiodic molecular patterns on the surface with a resolution of 10 to 15 nanometers. Such nanoscale focusing of molecules by coherent light can be used for executing nanometric molecular lithographic processes.
摘要翻译： 通过相干控制的光学聚焦在表面上对分子进行受控纳米级沉积的方法。 通过利用施加的激光束提供的电磁场，通过诱导分子结合状态的线性叠加来方便地执行相干控制。 通过将这种适当制备的分子的束通过由由两个相互作用的激光束引起的驻波提供的另一电磁场来方便地执行光聚焦。 改变激光束的特性改变在分子上作用的力，从而将它们引导到表面上的期望位置。 电磁场的频率，强度和相对相位的选择以及分子束和电磁场之间的相互作用的几何形状使得能够以10至15纳米的分辨率在表面上沉积非周期性分子图案。 通过相干光的分子的这种纳米尺度聚焦可以用于执行纳米分子光刻过程。
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公开(公告)号：US06468366B1
公开(公告)日：2002-10-22
申请号：US09568500
申请日：2000-05-11
申请人： Yuji Katsuda , Taketoshi Tsutsumi , Masaaki Masuda
发明人： Yuji Katsuda , Taketoshi Tsutsumi , Masaaki Masuda
IPC分类号： C23C800
摘要： A nitriding portion made of aluminum nitride as a main ingredient having a high concentration region in which an element mentioned below is existent at a high concentration and a low concentration region in which the element existent at a low concentration is formed on a surface of a substrate made of aluminum, aluminum alloy or aluminum-containing composite material by existing at least one element other than aluminum selected from Group 2A, Group 3A, Group 4A and Group 4B in Periodic Table in a stepwise manner. Thereby, it is possible to form the nitriding portion which shows a high corrosion resistance property with respect to a halogen-based corrosive gas.
摘要翻译： 在高浓度下存在具有高浓度区域的高浓度区域的氮化铝的氮化部分，在基板的表面上形成有以低浓度存在的元素的低浓度区域 由铝，铝合金或含铝复合材料制成，通过逐步地在元素周期表中存在选自元素2A，组3A，组4A和组4B中的铝以外的至少一种元素。 由此，能够形成相对于卤素系腐蚀性气体显示出高耐腐蚀性的氮化部。
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公开(公告)号：US06322859B1
公开(公告)日：2001-11-27
申请号：US09430772
申请日：1999-10-29
申请人： Arthur W. Pluim , Elise C. Kinkead
发明人： Arthur W. Pluim , Elise C. Kinkead
IPC分类号： C23C800
CPC分类号： C23C30/00
摘要： A process is described for producing a decorative material such as a wall covering material by applying a very thin layer of metal to the surface of a textured flexible substrate. The thin metal layer replicates the surface features and texture of the substrate to thereby create interesting visual effects.
摘要翻译： 描述了一种用于通过将非常薄的金属层施加到纹理柔性基底的表面来生产装饰材料（例如壁覆盖材料）的方法。 薄金属层复制了基板的表面特征和纹理，从而产生有趣的视觉效果。
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公开(公告)号：US06656293B2
公开(公告)日：2003-12-02
申请号：US10006207
申请日：2001-12-10
IPC分类号： C23C800
摘要： A method for treating a surface of a first component wherein at least a portion of the surface of the first component contacts a surface of a second component. The method includes forming a compound layer at at least a portion of the surface of the first component by a thermochemical diffusion treatment and isotropically finishing the at least a portion of the surface of the first component that contacts the surface of the second component.
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公开(公告)号：US06623568B2
公开(公告)日：2003-09-23
申请号：US10274727
申请日：2002-10-21
申请人： Masahito Hirose , Hiroaki Asanuma
发明人： Masahito Hirose , Hiroaki Asanuma
IPC分类号： C23C800
CPC分类号： F01L3/02 , C23C8/10 , C23C8/80 , F01L2101/00 , F01L2103/00 , Y10T137/7036
摘要： A Ti alloy poppet valve consists of a valve stem and a valve head, and is employed as intake or exhaust valve in an internal combustion engine of an automobile. O2 is put into the valve in a furnace at very slight amount and heated to introduce oxygen atoms into titanium of the valve to form a Ti—O interstitial solid solution without making titanium oxides. The valve is strengthened to increase hardness and wear resistance.
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公开(公告)号：US06361628B1
公开(公告)日：2002-03-26
申请号：US09529604
申请日：2000-04-17
IPC分类号： C23C800
摘要： The invention concerns a method for making a composite metal product by adding at least one substance to said product, which consists in using a metal product in the form of a continuous strip (1) moved in a vacuum chamber (2), applying the substance on said strip and diffusing said substance at least partially into the strip when it is passing in the vacuum chamber maintaining it at a temperature lower than its melting point, but sufficiently high for enabling said diffusion.
摘要翻译： 本发明涉及一种通过向所述产品中加入至少一种物质来制备复合金属产品的方法，该方法包括使用在真空室（2）中移动的连续条带（1）形式的金属产品， 在所述条带上并且当所述物质在真空室中通过时将所述物质至少部分地扩散到所述条带中，使其保持在低于其熔点的温度，但足够高以实现所述扩散。
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7.发明授权Enhanced solder surface and process for chemically and mechanically enhancing solder surface properties 失效增强的焊料表面和用于化学和机械增强焊料表面性能的工艺公开(公告)号：US06210547B1
公开(公告)日：2001-04-03
申请号：US09382221
申请日：1999-08-24
申请人： Frank D. Egitto , Edmond O. Fey , Luis J. Matienzo , David L. Questad , Rajinder S. Rai , Daniel C. Van Hart
发明人： Frank D. Egitto , Edmond O. Fey , Luis J. Matienzo , David L. Questad , Rajinder S. Rai , Daniel C. Van Hart
IPC分类号： C23C800
CPC分类号： C23C26/00 , B23K35/262 , B23K35/268 , C23C8/00 , H05K3/3457 , H05K2203/092 , H05K2203/095 , Y10S148/901 , Y10S148/903 , Y10T428/12687 , Y10T428/12701 , Y10T428/12708 , Y10T428/12861 , Y10T428/12896
摘要： A process for altering surface properties of a mass of metal alloy solder comprising a first metal and a second metal. The process comprises exposing the mass to energized ions to preferentially sputter atoms of the first metal to form a surface layer ratio of first metal to second metal atoms that is less than the bulk ratio. The solder may be located on the surface of a substrate, wherein the process may further comprise masking the substrate to shield all but a selected area from the ion beam. The sputtering gas may comprises a reactive gas such as oxygen and the substrate may be an organic substrate. The process may further comprise simultaneously exposing the organic substrate to energized ions of the reactive gas to roughen the organic substrate surface.
摘要翻译： 一种用于改变包含第一金属和第二金属的金属合金焊料块的表面性质的方法。 该方法包括将质量暴露于通电离子以优先溅射第一金属的原子，以形成小于体积比的第一金属与第二金属原子的表面层比。 焊料可以位于衬底的表面上，其中该工艺可以进一步包括掩蔽衬底以屏蔽离开所述离子束的所有区域。 溅射气体可以包括诸如氧的反应性气体，并且衬底可以是有机衬底。 该方法可以进一步包括将有机底物同时暴露于活性气体的激发离子以粗糙化有机基底表面。
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8.发明授权公开(公告)号：US06692795B2
公开(公告)日：2004-02-17
申请号：US10026205
申请日：2001-12-21
申请人： Seok-jun Won , Soon-yeon Park , Cha-young Yoo
发明人： Seok-jun Won , Soon-yeon Park , Cha-young Yoo
IPC分类号： C23C800
CPC分类号： H01L28/60 , C23C16/0281 , C23C16/18 , H01L21/28556 , H01L28/55
摘要： A method for fabricating a semiconductor device is provided. The method includes the steps of: forming an insulating layer having an opening region on a semiconductor substrate; forming a first ruthenium layer on the insulating layer and the opening region by sputtering at a first pressure; forming a second ruthenium layer on the first ruthenium layer by first chemical vapor deposition (CVD) at a first flow rate of oxygen gas and at a second pressure, wherein the second pressure is greater than the first pressure; and forming a third ruthenium layer on the second ruthenium layer by second CVD at a second flow rate of oxygen gas and at a third pressure, wherein the third pressure is greater than the first pressure.
摘要翻译： 提供一种制造半导体器件的方法。 该方法包括以下步骤：在半导体衬底上形成具有开口区域的绝缘层; 在第一压力下通过溅射在绝缘层和开口区域上形成第一钌层; 通过第一化学气相沉积（CVD）以第一氧气流量和第二压力在第一钌层上形成第二钌层，其中第二压力大于第一压力; 以及在所述第二钌层上通过第二CVD以第二流量的氧气和在第三压力下形成第三钌层，其中所述第三压力大于所述第一压力。
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公开(公告)号：US06610375B2
公开(公告)日：2003-08-26
申请号：US09836225
申请日：2001-04-18
IPC分类号： C23C800
CPC分类号： G21B1/13 , C23C16/08 , C23C16/4402 , Y02E30/128
摘要： In a plasma facing member exposed to a plasma beam of nuclear fusion reactors or the like, such as an electron beam, a tungsten layer is formed by the use of a CVD method and has a thickness of 500 micron meters or more. The tungsten layer may be overlaid on a substrate of molybdenum or tungsten and comprises included gases reduced to 2 ppm or less and impurities reduced to 2 ppm or less. The tungsten layer is specified by either a fine equi-axed grain structure or a columnar grain structure. Alternatively, the material of the substrate may be, for example, Cu alloy, stainless steel, Nb alloy, or V alloy.
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公开(公告)号：US06468604B1
公开(公告)日：2002-10-22
申请号：US09453889
申请日：2000-03-03
申请人： Ryoki Tobe , Hiroshi Doi , Atsushi Sekiguchi
发明人： Ryoki Tobe , Hiroshi Doi , Atsushi Sekiguchi
IPC分类号： C23C800
CPC分类号： C23C16/34
摘要： A method of manufacturing a titanium nitride thin film at the surface of a substrate the chemical vapor deposition method (CVD method) includes supplying trakisdialkylamino titanium (TDAAT and ammonia into a reaction vessel, and heating it a prescribed temperature under a low pressure of less than 100 Pa total pressure, wherein the partial pressure PTDAAT of the source-material gas is set in a range of 0
摘要翻译： 一种在基板表面制造氮化钛薄膜的方法，化学气相沉积方法（CVD方法）包括向反应容器中提供中间二烷基氨基钛（TDAAT和氨），并将其在低于 100Pa的总压，其中源材料气体的分压PTDAAT相对于加入的氨气的分压PNH3设定在0
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