公开(公告)号：US20090226824A1

公开(公告)日：2009-09-10

申请号：US12320874

申请日：2009-02-06

Applicant: Sang Kyun Kim ,  Sang Hak Lim ,  Mi Young Kim ,  Sang Ran Koh ,  Hui Chan Yun ,  Do Hyeon Kim ,  Dong Seon Uh ,  Jong Seob Kim

Inventor： Sang Kyun Kim ,  Sang Hak Lim ,  Mi Young Kim ,  Sang Ran Koh ,  Hui Chan Yun ,  Do Hyeon Kim ,  Dong Seon Uh ,  Jong Seob Kim

IPC: G03F1/00 ,  G03F7/20

CPC classification number: H01L21/31144 ,  C08G77/04 ,  C09D183/04 ,  H01L21/0276

Abstract: A hardmask composition for processing a resist underlayer film includes a solvent and an organosilane polymer, wherein the organosilane polymer is represented by Formula 6: In Formula 6, R is methyl or ethyl, R′ is substituted or unsubstituted cyclic or acyclic alkyl, Ar is an aromatic ring-containing functional group, x, y and z satisfy the relations x+y=4, 0.4≦x≦4, 0≦y≦3.6, and 4×10−4≦z≦1, and n is from about 3 to about 500.

Abstract translation: 用于加工抗蚀剂下层膜的硬掩模组合物包括溶剂和有机硅烷聚合物，其中有机硅烷聚合物由式6表示：在式6中，R是甲基或乙基，R'是取代或未取代的环状或无环烷基，Ar是 含芳环的官能团x，y和z满足x + y = 4,0.4 <= x <= 4,0 <= y <= 3.6和4×10-4 <= z <1的关系，以及 n为约3至约500。

公开(公告)号：US20090140216A1

公开(公告)日：2009-06-04

申请号：US12289963

申请日：2008-11-07

Applicant: Hyoun Young Kim ,  Dong Seon Uh ,  Jeong Ku Kang ,  Young Hoon Kim ,  Jae Sun Han ,  Ja Young Hwang ,  Gyu Ho Lee ,  Tae Hyun Lee

Inventor： Hyoun Young Kim ,  Dong Seon Uh ,  Jeong Ku Kang ,  Young Hoon Kim ,  Jae Sun Han ,  Ja Young Hwang ,  Gyu Ho Lee ,  Tae Hyun Lee

IPC: H01B1/20 ,  H01B1/22 ,  H01B1/24

CPC classification number: H05K3/323 ,  C08J5/18 ,  C08J2363/00

Abstract: An anisotropic conductive film composition includes a polymer resin, a first epoxy resin including at least one of a bisphenol epoxy resin, a novolac epoxy resin, a glycidyl epoxy resin, an aliphatic epoxy resin, and an alicyclic epoxy resin, a second epoxy resin including an acetal epoxy resin, an epoxy resin curing agent, and conductive particles.

Abstract translation: 各向异性导电膜组合物包括聚合物树脂，包含双酚环氧树脂，酚醛环氧树脂，缩水甘油环氧树脂，脂族环氧树脂和脂环族环氧树脂中的至少一种的第一环氧树脂，包括 缩醛环氧树脂，环氧树脂固化剂和导电颗粒。

公开(公告)号：US20080305441A1

公开(公告)日：2008-12-11

申请号：US12155490

申请日：2008-06-05

Applicant: Kyong Ho YOON ,  Jong Seob KIM ,  Dong Seon UH ,  Hwan Sung CHEON ,  Chang Il OH ,  Min Soo KIM ,  Jin Kuk LEE

Inventor： Kyong Ho YOON ,  Jong Seob KIM ,  Dong Seon UH ,  Hwan Sung CHEON ,  Chang Il OH ,  Min Soo KIM ,  Jin Kuk LEE

IPC: G03F7/26 ,  G03F1/00

CPC classification number: G03F7/091 ,  Y10S438/952

Abstract: A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formulae 1, 2 and 3:

Abstract translation: 硬掩模组合物包括有机溶剂和由式1,2和3表示的一种或多种含芳族环的聚合物：

公开(公告)号：US20080160460A1

公开(公告)日：2008-07-03

申请号：US12003731

申请日：2007-12-31

Applicant: Kyong Ho Yoon ,  Jong Seob Kim ,  Dong Seon Uh ,  Chang Il Oh ,  Kyung Hee Hyung ,  Min Soo Kim ,  Jin Kuk Lee

Inventor： Kyong Ho Yoon ,  Jong Seob Kim ,  Dong Seon Uh ,  Chang Il Oh ,  Kyung Hee Hyung ,  Min Soo Kim ,  Jin Kuk Lee

IPC: G03F7/00 ,  C08G67/00 ,  G02B5/22

CPC classification number: G02B1/111 ,  C08G10/02 ,  C08G61/02 ,  G03F7/091

Abstract: A naphthalene-backbone polymer represented by Formula 1: wherein n and m are independently at least 1 and less than about 190, R1 is a hydrogen, a hydroxyl, a hydrocarbon group of about 10 carbons or less, or a halogen, R2 is methylene or includes an aryl linking group, R3 is a conjugated diene group, and R4 is an unsaturated dienophile group.

Abstract translation: 由式1表示的萘主链聚合物：其中n和m独立地为至少1且小于约190，R 1是氢，羟基，约10个碳以下的烃基 或卤素，R 2是亚甲基或包括芳基连接基团，R 3是共轭二烯基团，R 4是 不饱和亲电子基团。

公开(公告)号：US20070148974A1

公开(公告)日：2007-06-28

申请号：US11508074

申请日：2006-08-22

Applicant: Dong Seon Uh ,  Chang Il Oh ,  Do Hyeon Kim ,  Hui Chan Yun ,  Jin Kuk Lee ,  Irina Nam ,  Jong Seob Kim

Inventor： Dong Seon Uh ,  Chang Il Oh ,  Do Hyeon Kim ,  Hui Chan Yun ,  Jin Kuk Lee ,  Irina Nam ,  Jong Seob Kim

IPC: C23F1/00 ,  H01L21/302

CPC classification number: H01L21/0273 ,  G03F7/11

Abstract: Provided herein are hardmask compositions for resist underlayer films, wherein according to some embodiments of the invention, hardmask compositions include a polymer prepared by the reaction of a compound of Formula 1 with a compound of Formula 2 (R)m—Si—(OCH3)4-m   (2) in the presence of a catalyst, wherein R is a monovalent organic group, n is an integer from 3 to 20, and m is 1 or 2; and an organic solvent.Also provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the invention. Further provided are semiconductor integrated circuit devices produced by a method embodiment of the invention.

Abstract translation: 本文提供了用于抗蚀剂下层膜的硬掩模组合物，其中根据本发明的一些实施方案，硬掩模组合物包括通过式1的化合物与式2化合物的反应制备的聚合物， （2）（2）式（2）所示的化合物，其中R 1，R 2，R 3， 在存在催化剂的情况下，<？in-line-formula description =“In-line Formulas”end =“tail”？>，其中R为一价有机基团，n为3至20的整数，m为1 或2; 和有机溶剂。 本文还提供了使用根据本发明实施例的硬掩模组合物制造半导体集成电路器件的方法。 还提供了通过本发明的方法实施例生产的半导体集成电路器件。

公开(公告)号：US20070148586A1

公开(公告)日：2007-06-28

申请号：US11507701

申请日：2006-08-22

Applicant: Dong Seon Uh ,  Chang Il Oh ,  Do Hyeon Kim ,  Hui Chan Yun ,  Jin Kuk Lee ,  Irina Nam ,  Jong Seob Kim

Inventor： Dong Seon Uh ,  Chang Il Oh ,  Do Hyeon Kim ,  Hui Chan Yun ,  Jin Kuk Lee ,  Irina Nam ,  Jong Seob Kim

IPC: G03C1/00

CPC classification number: G03F7/11 ,  G03F7/0752 ,  Y10S430/106 ,  Y10S430/111

Abstract: Provided herein are hardmask compositions for resist underlayer films, wherein in some embodiments, the hardmask compositions include(a) a first polymer prepared by the reaction of a compound of Formula 1 wherein n is a number of 3 to 20, with a compound of Formula 2 (R)m—Si—(OCH3)4-m   (2) wherein R is a monovalent organic group and m is 0, 1 or 2;(b) a second polymer that includes at least one of the structures represented by Formulae 3-6;(c) an acid or base catalyst; and(d) an organic solvent.Further provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the present invention.In addition, provided herein are semiconductor integrated circiut devices produced by a method embodiment of the invention.

Abstract translation: 本文提供了用于抗蚀剂下层膜的硬掩模组合物，其中在一些实施方案中，硬掩模组合物包括（a）通过其中n为3至20数的式1化合物与式1化合物的反应制备的第一聚合物 2 <？in-line-formula description =“In-line Formulas”end =“lead”？（R） -Si-（OCH 3 3）_{其中R是一价有机基团，m是0,1或2; （b）第二聚合物，其包含由式3-6表示的至少一种结构; （c）酸或碱催化剂; 和（d）有机溶剂。 本文还提供了使用根据本发明实施例的硬掩模组合物制造半导体集成电路器件的方法。 此外，本发明提供了通过本发明的方法实施例制造的半导体集成循环装置。}

公开(公告)号：US09048240B2

公开(公告)日：2015-06-02

申请号：US13728215

申请日：2012-12-27

Applicant: Young Woo Park ,  Nam Ju Kim ,  Kyoung Soo Park ,  Joon Mo Seo ,  Kyung Il Sul ,  Dong Seon Uh ,  Arum Yu ,  Hyun Min Choi

Inventor： Young Woo Park ,  Nam Ju Kim ,  Kyoung Soo Park ,  Joon Mo Seo ,  Kyung Il Sul ,  Dong Seon Uh ,  Arum Yu ,  Hyun Min Choi

IPC: H01B1/00 ,  H01L23/48 ,  H01L23/538 ,  C09J9/02 ,  C08G59/22 ,  C08G59/24 ,  H01L23/00 ,  C08L63/00

CPC classification number: H01L23/538 ,  C08G59/226 ,  C08G59/245 ,  C08K2201/001 ,  C08K2201/011 ,  C09J9/02 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/16225 ,  H01L2224/2929 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29366 ,  H01L2224/29371 ,  H01L2224/29386 ,  H01L2224/2939 ,  H01L2224/29393 ,  H01L2224/29439 ,  H01L2224/29444 ,  H01L2224/29447 ,  H01L2224/29455 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/07802 ,  H01L2924/07811 ,  H01L2924/15788 ,  H01L2924/00 ,  C08L63/00 ,  C08K3/36 ,  C08K3/10

Abstract: An electronic device includes an anisotropic conductive film as a connection material, the anisotropic conductive film being formed from an anisotropic conductive film-forming composition. The anisotropic conductive film-forming composition includes a polycyclic aromatic ring-containing epoxy resin, a fluorene epoxy resin, nano silica and conductive particles.

Abstract translation: 电子器件包括各向异性导电膜作为连接材料，各向异性导电膜由各向异性导电膜形成组合物形成。 各向异性导电膜形成组合物包括多环芳族环的环氧树脂，芴环氧树脂，纳米二氧化硅和导电颗粒。

公开(公告)号：US09035192B2

公开(公告)日：2015-05-19

申请号：US12974476

申请日：2010-12-21

Applicant: Gyu Ho Lee ,  Young Woo Park ,  Il Rae Cho ,  Young Hun Kim ,  Kyoung Soo Park ,  Jin Seong Park ,  Dong Seon Uh ,  Kyung Jin Lee ,  Kwang Jin Jung

Inventor： Gyu Ho Lee ,  Young Woo Park ,  Il Rae Cho ,  Young Hun Kim ,  Kyoung Soo Park ,  Jin Seong Park ,  Dong Seon Uh ,  Kyung Jin Lee ,  Kwang Jin Jung

IPC: H05K1/09 ,  C09J11/04 ,  C09J9/02 ,  H05K3/32 ,  C08K3/00 ,  C08K9/02

CPC classification number: C09J11/04 ,  C08K3/017 ,  C08K9/02 ,  C09J9/02 ,  H05K3/323 ,  H05K2201/0218

Abstract: An anisotropic conductive adhesive composite and film include a binder and conductive particles dispersed in the binder. The conductive particles include a copper core particle and a metal coating layer coated on a surface of the corresponding copper core particle.

Abstract translation: 各向异性导电粘合剂复合物和膜包括粘合剂和分散在粘合剂中的导电颗粒。 导电颗粒包括铜芯颗粒和涂覆在相应的铜芯颗粒的表面上的金属涂层。

公开(公告)号：US20140034882A1

公开(公告)日：2014-02-06

申请号：US14050555

申请日：2013-10-10

Applicant: Youn Jo KO ,  Dong Seon UH ,  Jang Hyun CHO ,  Jin Seong PARK ,  Sang Sik BAE ,  Jin Kyu KIM

Inventor： Youn Jo KO ,  Dong Seon UH ,  Jang Hyun CHO ,  Jin Seong PARK ,  Sang Sik BAE ,  Jin Kyu KIM

IPC: H01B1/12

CPC classification number: H01B1/24 ,  C08L33/12 ,  C08L35/04 ,  C09J9/02 ,  C09J175/16 ,  H01B1/12

Abstract: An anisotropic conductive film includes a binder part, a curing part, an initiator, and conductive particles, wherein the binder part includes at least one of a nitrile butadiene rubber (NBR) resin and a urethane resin, wherein the anisotropic conductive film has an electrical conductivity of more than 0 μS/cm to about 100 μS/cm.

Abstract translation: 各向异性导电膜包括粘合剂部分，固化部分，引发剂和导电颗粒，其中粘合剂部分包括丁腈橡胶（NBR）树脂和聚氨酯树脂中的至少一种，其中各向异性导电膜具有电 电导率大于0μS/ cm至约100μS/ cm。

公开(公告)号：US20130281559A1

公开(公告)日：2013-10-24

申请号：US13924877

申请日：2013-06-24

Applicant: Baek Soung Park ,  Ki Tae SONG ,  Dong Seon UH ,  In Hwan KIM

Inventor： Baek Soung Park ,  Ki Tae SONG ,  Dong Seon UH ,  In Hwan KIM

IPC: C09J163/00

CPC classification number: C09J163/00 ,  C08L63/00 ,  C09J7/00 ,  C09J7/10 ,  H01L24/27 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/27436 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29386 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48145 ,  H01L2224/73215 ,  H01L2224/83191 ,  H01L2224/83862 ,  H01L2224/92165 ,  H01L2224/94 ,  H01L2225/06506 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2224/27 ,  H01L2924/05442 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

Abstract: An adhesive composition for a semiconductor has two exothermic peaks between 65° C. and 350° C. and has an area ratio of voids of less than 10%, measured after curing at 150° C. for 10 minutes and then at 150° C. for 30 minutes, and then molding at 175° C. for 60 seconds. A first exothermic peak appears between 65° C. and 185° C. and a second exothermic peak appears between 155° C. and 350° C.

Abstract translation: 用于半导体的粘合剂组合物在65℃和350℃之间具有两个放热峰，并且在150℃下固化10分钟然后在150℃下测量的空隙面积比小于10％ 30分钟，然后在175℃下成型60秒。 第一个放热峰出现在65°C和185°C之间，第二个放热峰出现在155°C和350°C之间。