知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

398 records (took 0.051 seconds)

    Graded topcoat materials for immersion lithography
    2.
    发明授权
    Graded topcoat materials for immersion lithography 失效
    分级面漆浸渍光刻

    公开(公告)号：US08440387B2

    公开(公告)日：2013-05-14

    申请号：US12687380

    申请日：2010-01-14

    Applicant: Robert D. Allen ,  Phillip Brock ,  Daniel P. Sanders ,  Linda K. Sundberg

    Inventor： Robert D. Allen ,  Phillip Brock ,  Daniel P. Sanders ,  Linda K. Sundberg

    IPC: C08L27/12 ,  G03F7/11

    CPC classification number: G03F7/2041 ,  G03F7/11 ,  Y10S438/952

    Abstract: A topcoat material for immersion lithography and a method of performing immersion lithography using the topcoat material. The topcoat material includes a mixture of a first polymer and a second polymer. The first and second polymers of the topcoat material, when the topcoat material is formed into a topcoat layer between an immersion fluid and a photoresist layer, disperse non-homogenously throughout the topcoat layer.

    Abstract translation: 用于浸渍光刻的面漆材料和使用面漆材料进行浸渍光刻的方法。 面漆材料包括第一聚合物和第二聚合物的混合物。 面涂层材料的第一和第二聚合物当面涂层材料形成浸渍流体和光致抗蚀剂层之间的顶涂层时，不均匀地分散在整个顶涂层中。

    Ultra dark polymer
    4.
    发明授权
    Ultra dark polymer 有权
    超暗聚合物

    公开(公告)号：US08153353B2

    公开(公告)日：2012-04-10

    申请号：US12575670

    申请日：2009-10-08

    Applicant: Jason Michael Neidrich

    Inventor： Jason Michael Neidrich

    IPC: G03C1/835 ,  H01L21/02 ,  H01L21/70 ,  H01L21/77 ,  G02B26/00

    CPC classification number: G02B1/111 ,  G02B26/0833 ,  Y10S430/151 ,  Y10S430/162 ,  Y10S438/952 ,  Y10S438/964

    Abstract: A method and a material for creating an antireflective coating on an integrated circuit. A preferred embodiment comprises applying a dark polymer material on a reflective surface, curing the dark polymer material, and roughening a top surface of the dark polymer material. The roughening can be achieved by ashing the dark polymer material in an ash chamber. The dark polymer material, preferably a black matrix resin or a polyimide black matrix resin, when ashed in an oxygen rich atmosphere for a short period of time, forms a surface that is capable of absorbing light as well as randomly refracting light it does not absorb. A protective cap layer may be formed on top of the ashed dark polymer material to provide protection for the dark polymer material.

    Abstract translation: 一种用于在集成电路上产生抗反射涂层的方法和材料。 优选的实施方案包括在反射表面上施加深色聚合物材料，固化黑色聚合物材料，以及粗糙化深色聚合物材料的顶表面。 粗化可以通过在灰室中灰化黑色聚合物材料来实现。 黑色聚合物材料，优选黑色矩阵树脂或聚酰亚胺黑色矩阵树脂，当在富氧气氛中短时间灰化时，形成能够吸收光的表面以及不吸收光的随机折射光 。 可以在灰色深色聚合物材料的顶部上形成保护盖层，以保护黑色聚合物材料。

    Self-segregating multilayer imaging stack with built-in antireflective properties
    5.
    发明授权
    Self-segregating multilayer imaging stack with built-in antireflective properties 有权
    具有内置抗反射特性的自分离多层成像叠层

    公开(公告)号：US08084193B2

    公开(公告)日：2011-12-27

    申请号：US12172233

    申请日：2008-07-12

    Applicant: Joy Cheng ,  Dario L Goldfarb ,  David R Medeiros ,  Daniel P Sanders ,  Dirk Pfeifer ,  Libor Vylicky

    Inventor： Joy Cheng ,  Dario L Goldfarb ,  David R Medeiros ,  Daniel P Sanders ,  Dirk Pfeifer ,  Libor Vylicky

    IPC: G03F7/30 ,  G03F7/11

    CPC classification number: G03F7/091 ,  G03F7/0752 ,  Y10S430/136 ,  Y10S438/952 ,  Y10T428/24802

    Abstract: A coating process comprises forming a patterned material layer on a substrate using a self-segregating polymeric composition comprising a polymeric photoresistive material and an antireflective coating material. The polymeric photoresistive material and the antireflective coating material that make up the self segregating composition are contained in a single solution. When depositing this solution on a substrate and removing the solvent, the two materials self-segregate into two layers. The substrate can comprise one of a ceramic, dielectric, metal, or semiconductor material and in some instances a material such as a BARC material that is not from the self segregating composition. The composition may also contain a radiation-sensitive acid generator and a base quencher. This produces a coated substrate having a uniaxial bilayer coating oriented in a direction orthogonal to the substrate with a top photoresistive coating layer and a bottom antireflective coating layer. The process may also include optionally coating a top coat material on the coated substrate. Pattern-wise exposing the coated substrate to imaging radiation and contacting the coated substrate with a developer, produces the patterned material layer wherein the optional top coat material and a portion of the photoresist layer are simultaneously removed from the coated substrate, thereby forming a patterned photoresist layer on the substrate. Alternatively, the optional top coat material, a portion of the photoresist layer and a portion of the bottom antireflective layers are simultaneously removed from the coated substrate by the developer, thereby forming a patterned photoresist layer on the substrate.

    Abstract translation: 涂覆方法包括使用包含聚合物光致抗蚀剂材料和抗反射涂层材料的自分离聚合物组合物在基材上形成图案化材料层。 构成自分离组合物的聚合物光致抗蚀剂材料和抗反射涂层材料包含在单一溶液中。 当将该溶液沉积在基材上并除去溶剂时，两种材料自分离成两层。 衬底可以包括陶瓷，电介质，金属或半导体材料中的一种，并且在一些情况下可以是不是来自自分离组合物的诸如BARC材料的材料。 组合物还可以含有辐射敏感性酸产生剂和碱猝灭剂。 这产生了具有单轴双层涂层的涂覆基材，该单轴双层涂层在垂直于基板的方向上具有顶部光刻胶涂层和底部抗反射涂层。 该方法还可以包括任选在涂覆的基材上涂覆顶涂层材料。 将涂覆的基底图案地曝光成成像辐射并使涂覆的基底与显影剂接触，产生图案化材料层，其中可任选的外涂层材料和光刻胶层的一部分同时从涂覆的基底上移除，从而形成图案化的光致抗蚀剂 层。 或者，可选的顶涂层材料，光致抗蚀剂层的一部分和底部抗反射层的一部分由显影剂同时从涂覆的基底上移除，从而在基板上形成图案化的光致抗蚀剂层。

    Method of depositing thin film and method of manufacturing semiconductor using the same
    9.
    发明授权
    Method of depositing thin film and method of manufacturing semiconductor using the same 有权
    沉积薄膜的方法和使用其制造半导体的方法

    公开(公告)号：US07842606B2

    公开(公告)日：2010-11-30

    申请号：US11720450

    申请日：2005-11-28

    Applicant: Ki Hoon Lee ,  Young Hoon Park ,  Sahng Kyoo Lee ,  Tae Wook Seo ,  Ho Seung Chang

    Inventor： Ki Hoon Lee ,  Young Hoon Park ,  Sahng Kyoo Lee ,  Tae Wook Seo ,  Ho Seung Chang

    IPC: H01L21/4763 ,  H01L21/02

    CPC classification number: G03F7/091 ,  H01L21/0276 ,  H01L21/3146 ,  Y10S438/952

    Abstract: Disclosed herein are a method of depositing a thin film and a method of manufacturing a semiconductor using the same, having high selectivity by increasing etching resistance while an extinction coefficient associated with anti-reflectivity is maintained low. The method of depositing a thin film according to the invention includes (a) depositing an carbon anti-reflective film on the bottom film of a substrate; and (b) adding a compound containing nitrogen (N), fluorine (F) or silicon (Si) to the surface or the inner portion of the carbon anti-reflective film, to deposit a thin film of a-C:N, a-C:F or a-C:Si, having high selectivity, to a thickness from 1 to 100 nm using an atomic layer deposition process. Therefore, an ultrathin film having etching resistance is formed on or in the carbon anti-reflective film and the density and compressive stress of the carbon anti-reflective film are increased, thus increasing etching selectivity.

    Abstract translation: 本文公开了一种沉积薄膜的方法和使用该薄膜的半导体的制造方法，通过增加抗蚀性而具有高选择性，同时将与抗反射性相关联的消光系数保持为低。 根据本发明的沉积薄膜的方法包括（a）在基底的底膜上沉积碳抗反射膜; 和（b）在碳抗反射膜的表面或内部添加含有氮（N），氟（F）或硅（Si）的化合物，沉积a：N，aC：F 或aC：Si，具有高选择性，使用原子层沉积工艺，厚度为1至100nm。 因此，在碳抗反射膜上或碳抗反射膜上形成具有耐腐蚀性的超薄膜，并且碳抗反射膜的密度和压缩应力增加，从而增加蚀刻选择性。

    Composition for forming underlayer coating for litography containing epoxy compound and carboxylic acid compound
    10.
    发明申请
    Composition for forming underlayer coating for litography containing epoxy compound and carboxylic acid compound 有权
    用于形成含有环氧化合物和羧酸化合物的用于成像的下层涂层的组合物

    公开(公告)号：US20100279227A1

    公开(公告)日：2010-11-04

    申请号：US12805007

    申请日：2010-07-07

    Applicant: Takahiro KISHIOKA

    Inventor： Takahiro KISHIOKA

    IPC: G03F7/004

    CPC classification number: G03F7/091 ,  C08G59/40 ,  Y10S438/952

    Abstract: There is provided an underlayer coating forming composition for lithography that is used in lithography process of manufacture of semiconductor device; and an underlayer coating having a high dry etching rate compared with photoresist. Concretely, it is a composition for forming an underlayer without use of crosslinking reaction by an strong acid catalyst, and an underlayer coating forming composition containing a component having an epoxy group (a polymer, a compound) and a component having a phenolic hydroxyl group, a carboxyl group, a protected carboxyl group or an acid anhydride structure (a polymer, a compound).

    Abstract translation: 提供了用于制造半导体器件的光刻工艺中的用于光刻的底层涂层形成组合物; 以及与光致抗蚀剂相比具有高干蚀刻速率的底层涂层。 具体而言，作为不使用强酸性催化剂进行交联反应而形成底层的组合物和含有具有环氧基的成分（聚合物，化合物）和具有​​酚性羟基的成分的下层成膜组合物， 羧基，被保护的羧基或酸酐结构（聚合物，化合物）。

Patent Agency Ranking