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    Patterning process and resist composition
    4.
    发明授权
    Patterning process and resist composition 有权
    图案化过程和抗蚀剂组成

    公开(公告)号：US08895231B2

    公开(公告)日：2014-11-25

    申请号：US13225211

    申请日：2011-09-02

    申请人： Jun Hatakeyama ,  Kazuhiro Katayama

    发明人： Jun Hatakeyama ,  Kazuhiro Katayama

    IPC分类号： G03F7/004 ,  G03F7/40 ,  H01L21/027 ,  G03F7/00 ,  G03F7/039 ,  G03F7/20

    CPC分类号： G03F7/0045 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/40 ,  H01L21/0274 ,  Y10S430/114 ,  Y10S430/12

    摘要： A pattern is formed by coating a first positive resist composition comprising a base resin, a photoacid generator, and a base generator having both a 9-fluorenylmethyloxycarbonyl-substituted amino group and a carboxyl group onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for causing the base generator to generate a base for inactivating the pattern to acid, coating a second positive resist composition comprising an alcohol and an optional ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.

    摘要翻译： 通过将包含基础树脂，光酸产生剂和具有9-芴基甲氧基羰基取代的氨基和羧基的碱发生剂的第一正性抗蚀剂组合物涂布到基材上以形成第一抗蚀剂膜，形成图案曝光来形成图案 ，PEB和显影以形成第一抗蚀剂图案，加热第一抗蚀剂图案，使基底发生器产生用于使图案失去酸的基底，将包含醇和任选的醚的第二正性抗蚀剂组合物涂覆到第一抗蚀剂上 图案承载基板以形成第二抗蚀剂膜，图案曝光，PEB和显影以形成第二抗蚀剂图案。

    Patterning process and resist composition
    5.
    发明授权
    Patterning process and resist composition 有权
    图案化过程和抗蚀剂组成

    公开(公告)号：US08828647B2

    公开(公告)日：2014-09-09

    申请号：US13482650

    申请日：2012-05-29

    申请人： Jun Hatakeyama ,  Tomohiro Kobayashi

    发明人： Jun Hatakeyama ,  Tomohiro Kobayashi

    IPC分类号： G03F7/038 ,  G03F7/11 ,  G03F7/30 ,  G03F7/32 ,  G03F7/20 ,  G03F7/38 ,  G03F7/004 ,  G03F7/039

    CPC分类号： G03F7/004 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/20 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/2008 ,  G03F7/2022 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/38 ,  G03F7/70466

    摘要： A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units having an acid labile group-substituted carboxyl group and/or hydroxy group and recurring units having an oxirane or oxetane ring, an acid generator, and an organic solvent displays a high dissolution contrast in organic solvent development and controlled acid diffusion. A fine hole pattern featuring good size control can be formed.

    摘要翻译： 通过将抗蚀剂组合物施加到基材上，预烘烤，暴露于高能辐射，烘烤（PEB）和在有机溶剂显影剂中显影曝光的抗蚀剂膜以溶解抗蚀剂膜的未曝光区域来形成负图案。 包含具有酸不稳定基团取代的羧基和/或羟基的重复单元的聚合物和具有环氧乙烷或氧杂环丁烷环的重复单元，酸产生剂和有机溶剂的抗蚀剂组合物在有机溶剂显影中显示高溶解度对比度 并控制酸扩散。 可以形成具有良好尺寸控制的细孔图案。

    Positive resist composition and patterning process
    6.
    发明授权
    Positive resist composition and patterning process 有权
    正抗蚀剂组成和图案化工艺

    公开(公告)号：US08735046B2

    公开(公告)日：2014-05-27

    申请号：US13300894

    申请日：2011-11-21

    申请人： Jun Hatakeyama ,  Koji Hasegawa

    发明人： Jun Hatakeyama ,  Koji Hasegawa

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38

    CPC分类号： G03F7/0392 ,  C08F220/18 ,  C08F2220/283 ,  C08F2220/346 ,  C08F2220/382 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/085

    摘要： A polymer obtained from copolymerization of a recurring unit having a carboxyl group and/or phenolic hydroxyl group substituted with an acid labile group with a methacrylate having a phenolic hydroxyl-bearing pyridine is useful as a base resin in a positive resist composition. The resist composition comprising the polymer is improved in contrast of alkali dissolution rate before and after exposure, acid diffusion control, resolution, and profile and edge roughness of a pattern after exposure.

    摘要翻译： 由具有酸不稳定基取代的具有羧基和/或酚羟基的重复单元与具有含酚羟基的吡啶的甲基丙烯酸酯共聚得到的聚合物可用作正性抗蚀剂组合物中的基础树脂。 包含聚合物的抗蚀剂组合物在曝光前后的碱溶解速率，酸扩散控制，分辨率以及曝光后图案的轮廓和边缘粗糙度的对比度方面得到改善。

    Patterning process
    7.
    发明授权
    Patterning process 有权
    图案化过程

    公开(公告)号：US08703404B2

    公开(公告)日：2014-04-22

    申请号：US13368417

    申请日：2012-02-08

    申请人： Jun Hatakeyama ,  Masashi Iio

    发明人： Jun Hatakeyama ,  Masashi Iio

    IPC分类号： G03F7/26

    CPC分类号： G03F7/11 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/095 ,  G03F7/2041

    摘要： A negative pattern is formed by coating a resist composition onto a substrate, exposure, bake, and development in alkaline water. The resist composition comprises a polymer comprising acid labile group-containing recurring units, adapted to turn soluble in alkaline developer under the action of acid, an acid generator and/or an acid, a photobase generator capable of generating an amino-containing compound, a quencher for neutralizing acid for inactivation, and an organic solvent.

    摘要翻译： 通过将抗蚀剂组合物涂覆在基材上，在碱性水中曝光，烘烤和显影来形成负图案。 抗蚀剂组合物包括含有酸不稳定基团的重复单元的聚合物，其适于在酸的作用下使可溶于碱性显影剂，酸产生剂和/或酸，能够产生含氨基化合物的光碱产生剂， 用于中和酸灭活的猝灭剂和有机溶剂。

    Patterning process
    9.
    发明授权
    Patterning process 有权
    图案化过程

    公开(公告)号：US08492078B2

    公开(公告)日：2013-07-23

    申请号：US13010318

    申请日：2011-01-20

    申请人： Jun Hatakeyama ,  Takeshi Nagata ,  Koji Hasegawa

    发明人： Jun Hatakeyama ,  Takeshi Nagata ,  Koji Hasegawa

    IPC分类号： G03F7/26

    CPC分类号： G03F7/0397 ,  G03F7/0046 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325

    摘要： A pattern is formed by coating a resist composition comprising a polymer comprising recurring units having an optionally acid labile group-substituted naphthol group, an acid generator, and an organic solvent onto a substrate, baking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film with an organic solvent developer to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved. In the process of image formation via positive/negative reversal by organic solvent development, the resist film has a high dissolution contrast and controlled acid diffusion. By subjecting the resist film to exposure through a mask having a lattice-like pattern and organic solvent development, a fine hole pattern can be formed at a high precision of dimensional control.

    摘要翻译： 通过将包含含有任选的酸不稳定基取代的萘酚基的重复单元，酸产生剂和有机溶剂的聚合物的抗蚀剂组合物涂布在基材上，烘烤以形成抗蚀剂膜，将抗蚀剂膜暴露于 高能辐射，烘烤，并用有机溶剂显影剂显影曝光的薄膜以形成其中未暴露的薄膜区域溶解并且曝光区域不溶解的负图案。 在通过有机溶剂显影的正/负反转的图像形成过程中，抗蚀剂膜具有高的溶解对比度和受控的酸扩散。 通过使抗蚀剂膜通过具有格子状图案和有机溶剂显影的掩模进行曝光，可以以高精度的尺寸控制形成细孔图案。

    PATTERNING PROCESS AND RESIST COMPOSITION
    10.
    发明申请
    PATTERNING PROCESS AND RESIST COMPOSITION 审中-公开
    绘图工艺和耐腐蚀组合物

    公开(公告)号：US20130065183A1

    公开(公告)日：2013-03-14

    申请号：US13606297

    申请日：2012-09-07

    申请人： Tomohiro Kobayashi ,  Jun Hatakeyama ,  Masashi Iio ,  Yuuki Suka ,  Koji Hasegawa ,  Yuji Harada

    发明人： Tomohiro Kobayashi ,  Jun Hatakeyama ,  Masashi Iio ,  Yuuki Suka ,  Koji Hasegawa ,  Yuji Harada

    IPC分类号： G03F7/004 ,  G03F7/20

    CPC分类号： G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325

    摘要： A resist composition is provided comprising a polymer comprising recurring units having a protected hydroxyl group, a photoacid generator, an organic solvent, and a hydroxyl-free polymeric additive comprising fluorinated recurring units. A negative pattern is formed by coating the resist composition, prebaking to form a resist film, exposing, baking, and developing the exposed film in an organic solvent-based developer to selectively dissolve the unexposed region of resist film.

    摘要翻译： 提供了抗蚀剂组合物，其包含聚合物，其包含具有被保护的羟基的重复单元，光致酸产生剂，有机溶剂和包含氟化重复单元的无羟基聚合物添加剂。 通过涂覆抗蚀剂组合物，预烘烤以形成抗蚀剂膜，在有机溶剂基显影剂中曝光，烘烤和显影曝光的膜以选择性地溶解抗蚀剂膜的未曝光区域，形成负图案。