公开(公告)号：US20100279227A1

公开(公告)日：2010-11-04

申请号：US12805007

申请日：2010-07-07

Applicant: Takahiro KISHIOKA

Inventor： Takahiro KISHIOKA

IPC: G03F7/004

CPC classification number: G03F7/091 ,  C08G59/40 ,  Y10S438/952

Abstract: There is provided an underlayer coating forming composition for lithography that is used in lithography process of manufacture of semiconductor device; and an underlayer coating having a high dry etching rate compared with photoresist. Concretely, it is a composition for forming an underlayer without use of crosslinking reaction by an strong acid catalyst, and an underlayer coating forming composition containing a component having an epoxy group (a polymer, a compound) and a component having a phenolic hydroxyl group, a carboxyl group, a protected carboxyl group or an acid anhydride structure (a polymer, a compound).

Abstract translation: 提供了用于制造半导体器件的光刻工艺中的用于光刻的底层涂层形成组合物; 以及与光致抗蚀剂相比具有高干蚀刻速率的底层涂层。 具体而言，作为不使用强酸性催化剂进行交联反应而形成底层的组合物和含有具有环氧基的成分（聚合物，化合物）和具有​​酚性羟基的成分的下层成膜组合物， 羧基，被保护的羧基或酸酐结构（聚合物，化合物）。