公开(公告)号：US20130113169A1

公开(公告)日：2013-05-09

申请号：US13728607

申请日：2012-12-27

申请人： Canon Anelva Corporation

发明人： Kyosuke Sugi

IPC分类号： H01L21/683

CPC分类号： H01L21/6833 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/68764 ,  H01L21/68792 ,  Y10T279/23

摘要： A power input mechanism includes a first stationary conductive member, a second stationary conductive member, a stationary insulating member which is fixed to a housing and insulates the first stationary conductive member and the second stationary conductive member from each other, a first rotary conductive member, a second rotary conductive member, a rotary insulating member which is fixed to a support column and insulates the first rotary conductive member and the second rotary conductive member from each other, a first power input member which supplies a first voltage to a substrate holder via the first rotary conductive member and the first stationary conductive member, and a second power input member which supplies a second voltage to the substrate holder via the second rotary conductive member and the second stationary conductive member.

摘要翻译： 电源输入机构包括第一固定导电构件，第二固定导电构件，固定绝缘构件，其固定到壳体并使第一固定导电构件和第二静止导电构件彼此绝缘;第一旋转导电构件， 第二旋转导电构件，旋转绝缘构件，固定到支撑柱并使第一旋转导电构件和第二旋转导电构件彼此绝缘;第一电力输入构件，其经由基座保持器经由 第一旋转导电构件和第一固定导电构件;以及第二电力输入构件，其经由第二旋转导电构件和第二静止导电构件向基板保持器提供第二电压。

公开(公告)号：US20120288963A1

公开(公告)日：2012-11-15

申请号：US13494797

申请日：2012-06-12

申请人： Kazumasa NISHIMURA

发明人： Kazumasa NISHIMURA

IPC分类号： H01L43/12

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  C08K2201/01 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909

摘要： The present invention provides a manufacturing method of a magneto-resistive element capable of obtaining a higher MR ratio, in a method of forming a metal oxide layer (e.g., MgO layer) by oxidation treatment of a metal layer (e.g., Mg layer). An embodiment of the present invention includes the steps of; providing a substrate having a first ferromagnetic layer; fabricating a tunnel barrier layer on the first ferromagnetic layer; and forming a second ferromagnetic layer on the tunnel barrier layer. The step of fabricating the tunnel barrier layer includes; the steps of; depositing a first metal layer on the first ferromagnetic layer;oxidizing the first metal layer; depositing a second metal layer on the oxidized first metal layer; and performing heating treatment on the oxidized first metal layer and the second metal layer at a temperature at which the second metal layer boils.

摘要翻译： 本发明提供了在通过金属层（例如Mg层）的氧化处理形成金属氧化物层（例如，MgO层）的方法中能够获得较高MR比的磁阻元件的制造方法。 本发明的实施例包括以下步骤： 提供具有第一铁磁层的衬底; 在所述第一铁磁层上制造隧道势垒层; 以及在隧道势垒层上形成第二铁磁层。 制造隧道势垒层的步骤包括： 的步骤; 在第一铁磁层上沉积第一金属层; 氧化第一金属层; 在氧化的第一金属层上沉积第二金属层; 在第二金属层沸腾的温度下对氧化的第一金属层和第二金属层进行加热处理。

公开(公告)号：US08309917B2

公开(公告)日：2012-11-13

申请号：US12632464

申请日：2009-12-07

申请人： Yoshiro Shiokawa ,  Harumi Maruyama ,  Yasuyuki Taneda ,  Megumi Nakamura

发明人： Yoshiro Shiokawa ,  Harumi Maruyama ,  Yasuyuki Taneda ,  Megumi Nakamura

IPC分类号： H01J49/00

CPC分类号： H01J49/145 ,  H01J49/0468

摘要： The present invention maintains a stable emission amount from an emitter. In an embodiment of the present invention, a solid sample or a liquid sample is heated to gasify an object to be measured contained in the solid sample or the liquid sample, thereby forming a neutral gaseous molecule, and a metal ion emitted from an emitter having an oxidized surface is attached to the neutral gaseous molecule to ionize the neutral gaseous molecule, which is subjected to mass spectrometry. The solid sample or the liquid sample is a sample that emits a reducing gas by heating. The heating for gasifying the object to be measured is performed at a temperature lower than the vaporization temperature of the solid sample or the liquid sample and not less than the vaporization temperature of the object to be measured, and an oxidizing gas is provided to the emitter.

摘要翻译： 本发明保持来自发射体的稳定的发射量。 在本发明的一个实施方案中，将固体样品或液体样品加热以使包含在固体样品或液体样品中的待测物体气化，从而形成中性气体分子，并从具有 将氧化的表面附着到中性气体分子上以使经过质谱的中性气体分子电离。 固体样品或液体样品是通过加热发射还原气体的样品。 用于使待测物体气化的加热在比固体样品或液体样品的蒸发温度低的温度下进行，并且不低于待测物体的蒸发温度，并且向发射体提供氧化气体 。

公开(公告)号：US08281740B2

公开(公告)日：2012-10-09

申请号：US12502344

申请日：2009-07-14

申请人： Kazuto Yamanaka ,  Masahiro Shibamoto ,  Ayumu Miyoshi ,  Satoshi Hitomi ,  David Djulianto Djayaprawira

发明人： Kazuto Yamanaka ,  Masahiro Shibamoto ,  Ayumu Miyoshi ,  Satoshi Hitomi ,  David Djulianto Djayaprawira

IPC分类号： C23C16/00

CPC分类号： G11B5/8404 ,  H01J27/024 ,  H01J37/04 ,  H01J37/09 ,  H01J37/3053 ,  H01J37/32422 ,  H01J2237/022 ,  H01J2237/0453 ,  H01J2237/0822 ,  H01J2237/0825

摘要： The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate W, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate W, and an area of a first grid in the first ion beam generator, and an area of a second grid in the second ion beam generator, each area corresponding to an opening of the substrate W, are occluded.

摘要翻译： 本发明提供一种基板处理装置，其能够抑制经由基板彼此相对布置的离子束发生器的内部的相互污染和/或损坏，以及磁记录介质制造方法。 根据本发明的实施例的基板处理装置包括将离子束施加到待加工基板W的一个表面的第一离子束发生器和将另一个表面施加离子束的第二离子束发生器 经由基板W彼此相对布置的第一离子束发生器中的第一格栅的区域和第二离子束发生器中的第二格栅的区域，每个区域对应于基板的开口 W，被遮挡。

公开(公告)号：US20120247952A1

公开(公告)日：2012-10-04

申请号：US13446015

申请日：2012-04-13

申请人： Tetsuya ENDO ,  Hiroyuki HOSOYA

发明人： Tetsuya ENDO ,  Hiroyuki HOSOYA

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  C23C14/044 ,  C23C14/225 ,  C23C14/3407 ,  C23C14/352 ,  H01J37/3408 ,  H01J37/3441 ,  H01J37/3447

摘要： The present invention provides a film forming method which can reduce deterioration of film thickness distribution even if the thickness of a film to be formed is extremely small while improving use efficiency of a target and a sputtering apparatus. A film forming method by a sputtering apparatus according to one embodiment of the present invention has a first step of fixing a magnet to a first position and performing film formation on a substrate on a substrate support surface, a second step of moving the magnet to a second position different from the first position after finishing the film formation on the substrate and then fixing it thereto, and a third step of performing film formation on the substrate on the substrate support surface by using the magnet fixed to the second position.

摘要翻译： 本发明提供了即使要形成的膜的厚度非常小，同时提高靶和溅射装置的使用效率，也能够降低膜厚分布的劣化的成膜方法。 通过根据本发明的一个实施例的溅射装置的成膜方法具有将磁体固定到第一位置并在基板支撑表面上的基板上进行成膜的第一步骤，将磁体移动到 在完成基板上的成膜并然后固定之后的第一位置的第二位置，以及通过使用固定到第二位置的磁体在基板支撑表面上的基板上进行成膜的第三步骤。

公开(公告)号：US08278211B2

公开(公告)日：2012-10-02

申请号：US13004263

申请日：2011-01-11

申请人： Hanako Hirayama ,  Eisaku Watanabe

发明人： Hanako Hirayama ,  Eisaku Watanabe

IPC分类号： H01L21/44

CPC分类号： C23C14/0641 ,  C23C14/0036 ,  C23C14/046 ,  C23C14/542

摘要： According to the present invention, a thin film having a desired thickness is formed on an inner sidewall of a step with excellent step coverage in a film forming step and an etching step at least once, respectively. In an embodiment of the present invention, a target material is deposited on a substrate (17) having a concave step (31, 32) having an opening width or opening diameter of 3 μm or less and an aspect ratio of 1 or more. At this time, a film forming method according to the present invention has a first step of depositing a thin film onto a bottom (33) of the step (31, 32) and a second step of forming a film on an inner sidewall (34) of the step (31, 32) by re-sputtering the thin film deposited on the bottom (33) and the pressure in a process chamber in the second step is set lower than that in the process chamber in the first step and the ratio of anode power to cathode power in the second step is set greater than the power ratio in the first step.

摘要翻译： 根据本发明，在成膜步骤和蚀刻步骤中分别具有优异的阶梯覆盖度的步骤的内侧壁上分别形成具有期望厚度的薄膜。 在本发明的一个实施例中，将目标材料沉积在具有开口宽度或开口直径为3μm以下，纵横比为1以上的凹形台阶（31,32）的基板（17）上。 此时，根据本发明的成膜方法具有将薄膜沉积到台阶（31,32）的底部（33）上的第一步骤和在内侧壁（34）上形成薄膜的第二步骤 ）通过再沉积在底部（33）上的薄膜和第二步骤中的处理室中的压力而设置为比第一步骤中的处理室低，并且比率 在第二步骤中阳极功率与阴极功率的关系设定为大于第一步骤中的功率比。

公开(公告)号：US20120219921A1

公开(公告)日：2012-08-30

申请号：US13511092

申请日：2010-12-21

申请人： Masami Shibagaki ,  Kaori Mashimo

发明人： Masami Shibagaki ,  Kaori Mashimo

IPC分类号： F27D19/00 ,  H01L21/425 ,  G05D23/00

CPC分类号： H01L21/67248

摘要： The present invention provides a temperature control method for a substrate heat treatment apparatus that achieves high throughput while securing stability in rapid heating where a large-diameter silicon carbide (SiC) substrate having impurity ions implanted thereinto is subjected to an activation annealing treatment.A temperature control method for a substrate heat treatment apparatus (1) that includes a heating element includes: increasing the treatment temperature; continuing the temperature increase by reducing the value of power in a stepwise manner after the treatment temperature reaches a preset temperature (T1) before reaching the annealing temperature, the power being applied to heat the heating element; and maintaining the treatment temperature at a fixed value until an annealing treatment is completed after the treatment temperature reaches the annealing temperature (TA).

摘要翻译： 本发明提供了一种用于基板热处理装置的温度控制方法，其在确保其中具有杂质离子的大直径碳化硅（SiC）基板经受活化退火处理的快速加热的稳定性的同时实现高产量。 包括加热元件的基板热处理设备（1）的温度控制方法包括：提高处理温度; 在达到退火温度之前处理温度达到预设温度（T1）后逐步降低功率值继续升温，加热加热元件; 并且在处理温度达到退火温度（TA）后，将处理温度保持在固定值直到退火处理完成。

公开(公告)号：US08246798B2

公开(公告)日：2012-08-21

申请号：US12667836

申请日：2009-03-02

申请人： Hiroyuki Hosoya ,  Koji Tsunekawa ,  Yoshinori Nagamine

发明人： Hiroyuki Hosoya ,  Koji Tsunekawa ,  Yoshinori Nagamine

IPC分类号： C23C14/35 ,  C23C16/00

CPC分类号： C23C14/505 ,  B82Y10/00 ,  B82Y25/00 ,  C23C14/351 ,  C23C14/352 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/3909 ,  H01J37/3402 ,  H01L43/12

摘要： According to the present invention, it can be switched whether or not to apply a magnetic field to a substrate depending on a material of a film to be formed, and a magnetic layer and a non-magnetic layer can be formed in the same chamber.A sputtering apparatus 100 includes a substrate holder 102 configured to support a substrate W; magnet holders 106 that are disposed around the substrate holder; magnets 104 that are movably loaded on the magnet holders; supporting members 103 that protrude from the substrate holder so as to face the magnets; connecting members 105 that protrude from the magnets to face the substrate holder; a rotation mechanism 121 configured to rotationally move at least one of the substrate holder and the magnet holders; and a connection switching mechanism 122 configured to move, when positions of the supporting members and the connecting members are matched to each other by rotational movement of the rotation mechanism, the substrate holder upward and downward to engage the supporting members and the connecting members with each other or separate the supporting members and the connecting members from each other, and switch whether or not to apply a magnetic field to the substrate W.

摘要翻译： 根据本发明，可以切换是否根据要形成的膜的材料向基板施加磁场，并且可以在同一室中形成磁性层和非磁性层。 溅射装置100包括被配置为支撑基板W的基板保持件102; 设置在基板支架周围的磁体保持器106; 可移动地装载在磁体保持器上的磁体104; 支撑构件103，其从基板保持件突出以面对磁体; 连接构件105，其从所述磁体突出以面对所述衬底保持器; 旋转机构121，被配置为旋转地移动所述基板保持件和所述磁体保持器中的至少一个; 以及连接切换机构122，其被配置为当所述支撑部件和所述连接部件的位置通过所述旋转机构的旋转运动彼此匹配时移动，所述基板保持件向上和向下移动以使所述支撑部件和所述连接部件与每个 将支撑构件和连接构件彼此分离或分离，并且切换是否向基板W施加磁场。

公开(公告)号：US20120193071A1

公开(公告)日：2012-08-02

申请号：US13307673

申请日：2011-11-30

申请人： Koji Tsunekawa ,  Yoshinori Nagamine ,  Shinji Furukawa

发明人： Koji Tsunekawa ,  Yoshinori Nagamine ,  Shinji Furukawa

IPC分类号： H01L21/477 ,  F27D11/12 ,  F25B29/00

CPC分类号： H01L21/6719 ,  H01L21/67109 ,  H01L21/67115 ,  H01L43/12

摘要： The present invention provides a vacuum heating/cooling apparatus capable of rapidly heating and also rapidly cooling only a substrate while a high vacuum degree is maintained after film-formation processing. The vacuum heating/cooling apparatus according to an embodiment of the present invention includes a vacuum chamber (1), a halogen lamp (2) which emits heating light, a quartz window (3) for allowing the heating light to enter the vacuum chamber (1), a substrate supporting base (9) having a cooling function, and a lift pin (13) which causes the substrate (5) to stand still at a heating position P3 and a cooling position P1 and moves the substrate (5) between the heating position P3 and the cooling position P1.

摘要翻译： 本发明提供了一种真空加热/冷却装置，其能够在成膜处理之后保持高真空度的同时快速加热并且仅快速冷却基板。 根据本发明实施例的真空加热/冷却装置包括真空室（1），发出加热灯的卤素灯（2），用于使加热光进入真空室的石英窗（3） 1），具有冷却功能的基板支撑基座（9）和提升销（13），其使基板（5）静止在加热位置P3和冷却位置P1，并使基板（5）在 加热位置P3和冷却位置P1。

公开(公告)号：US20120160805A1

公开(公告)日：2012-06-28

申请号：US13329985

申请日：2011-12-19

申请人： Kiyoshi Ehara ,  Mitsuo Suzuki

发明人： Kiyoshi Ehara ,  Mitsuo Suzuki

IPC分类号： C23F1/12 ,  C23F1/08 ,  B05D1/36 ,  B05D3/02 ,  B05D3/00 ,  C23C16/52 ,  B05D3/10

CPC分类号： H01L21/67745 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67393

摘要： A substrate processing method comprises: an execution step of executing the first processing for the plurality of substrates, and executing the second processing for the substrates having undergone the first processing; a recovery step of recovering the plurality of substrates having undergone the first processing and the second processing to the retraction chamber; a conditioning step of, after completion of the first processing for the last substrate among the plurality of substrates, loading a dummy substrate into the first processing chamber, executing the third processing for the dummy substrate, and unloading the dummy substrate from the first processing chamber; and a second execution step of, after the dummy substrate is unloaded from the first processing chamber in the conditioning step, loading the substrates recovered in the recovery step into the first processing chamber, and executing the third processing for the substrates loaded into the first processing chamber.

摘要翻译： 一种基板处理方法，包括：执行步骤，对所述多个基板执行所述第一处理，并对经过所述第一处理的基板执行所述第二处理; 回收步骤，将经过第一处理和第二处理的多个基板回收到回缩室; 调整步骤，在所述多个基板中的最后基板的第一处理完成之后，将虚设基板装载到所述第一处理室中，对所述虚设基板进行所述第三处理，从所述第一处理室卸载所述虚设基板 ; 以及第二执行步骤，在所述调节步骤中从所述第一处理室中卸载所述虚设基板之后，将在所述回收步骤中回收的所述基板装载到所述第一处理室中，并对被加载到所述第一处理中的所述基板执行所述第三处理 房间。