公开(公告)号：US08999121B2

公开(公告)日：2015-04-07

申请号：US13116492

申请日：2011-05-26

申请人： Kyosuke Sugi ,  Tetsuya Endo ,  Einstein Noel Abarra

发明人： Kyosuke Sugi ,  Tetsuya Endo ,  Einstein Noel Abarra

IPC分类号： C23C14/34 ,  C23C14/22 ,  C23C14/50 ,  H01J37/32 ,  H01J37/34

CPC分类号： C23C14/225 ,  C23C14/34 ,  C23C14/345 ,  C23C14/505 ,  H01J37/32568 ,  H01J37/34

摘要： The present invention provides a sputtering apparatus and a film-forming method capable of forming a magnetic film having a reduced variation in the orientation of the magnetic anisotropy. The sputtering apparatus of the present invention is equipped with a rotatable cathode and a rotatable stage. The stage can have an electrostatic chuck. Moreover, the stage may electrically be connected with a bias power source capable of applying a bias voltage to the stage. Furthermore, the stage may have the electrostatic chuck and electrically be connected with the bias power source.

摘要翻译： 本发明提供一种能够形成具有降低的磁各向异性取向变化的磁性膜的溅射装置和成膜方法。 本发明的溅射装置装备有可旋转阴极和可旋转台。 舞台上可以有一个静电吸盘。 此外，该级可以与能够向该级施加偏置电压的偏置电源电连接。 此外，该台可以具有静电卡盘并与偏置电源电连接。

公开(公告)号：US08507113B2

公开(公告)日：2013-08-13

申请号：US13319209

申请日：2010-05-28

申请人： Einstein Noel Abarra ,  Tetsuya Endo

发明人： Einstein Noel Abarra ,  Tetsuya Endo

IPC分类号： H01L43/08 ,  G01R33/09 ,  H01F10/16

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/16 ,  H01F10/32 ,  H01L43/12 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/1171

摘要： The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall surfaces of a magnetoresistive element so as to be almost perpendicular to the junction wall surfaces. A magnetic sensor stack body has, on sides of opposed junction wall surfaces of a magnetoresistive element, field regions for applying a bias magnetic field to the element. The field region has first and second magnetic layers having magnetic particles having crystal c-axes, the first magnetic layer is disposed adjacent to the junction wall surface in the field region, the crystal c-axes in the first magnetic layer are aligned and oriented along an ABS in a film plane, the second magnetic layer is disposed adjacent to the first magnetic layer in the field region, and the crystal c-axis directions in the second magnetic layer are distributed at random in a plane.

摘要翻译： 本发明涉及在磁阻元件的两个相对的接合壁表面附近的磁性层中对准晶体c轴，以便几乎垂直于接合壁表面。 磁传感器堆叠体在磁阻元件的相对的接合壁表面的侧面上具有用于向元件施加偏置磁场的场区域。 场区具有第一和第二磁性层，具有具有晶体c轴的磁性颗粒，第一磁性层与场区域中的接合壁表面相邻地设置，第一磁性层中的晶体c轴对准并定向 在膜平面中的ABS，第二磁性层与场区域中的第一磁性层相邻地设置，并且第二磁性层中的晶体c轴方向在平面内随机分布。

公开(公告)号：US20120160672A1

公开(公告)日：2012-06-28

申请号：US13334859

申请日：2011-12-22

申请人： Tetsuya Endo

发明人： Tetsuya Endo

IPC分类号： C23C14/35

CPC分类号： H01J37/3455 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3435

摘要： A sputtering apparatus includes a target electrode capable of mounting a target, a first support member which supports the target electrode, a magnet unit which forms a magnetic field on a surface of the target, a second support member which supports the magnet unit, and a force generation portion which is provided between the first support member and the second support member, and generates a second force in a direction opposite to a first force that acts on the second support member by an action of the magnetic field formed between the target and the magnet unit, wherein the second force has a magnitude which increases as the magnet unit comes closer to the target electrode.

摘要翻译： 溅射装置包括能够安装靶的目标电极，支撑目标电极的第一支撑构件，在靶的表面上形成磁场的磁体单元，支撑磁体单元的第二支撑构件，以及 力产生部分，其设置在第一支撑构件和第二支撑构件之间，并且通过形成在目标和第二支撑构件之间的磁场的作用沿与第二支撑构件作用的第一力相反的方向产生第二力 磁体单元，其中所述第二力具有随着所述磁体单元靠近所述目标电极而增加的大小。

公开(公告)号：US20120070693A1

公开(公告)日：2012-03-22

申请号：US13319209

申请日：2010-05-28

申请人： Einstein Noel Abarra ,  Tetsuya Endo

发明人： Einstein Noel Abarra ,  Tetsuya Endo

IPC分类号： G11B5/33 ,  C23C14/16 ,  B05D5/12

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/16 ,  H01F10/32 ,  H01L43/12 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/1171

摘要： The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall surfaces of a magnetoresistive element so as to be almost perpendicular to the junction wall surfaces. A magnetic sensor stack body has, on sides of opposed junction wall surfaces of a magnetoresistive element, field regions for applying a bias magnetic field to the element. The field region has first and second magnetic layers having magnetic particles having crystal c-axes, the first magnetic layer is disposed adjacent to the junction wall surface in the field region, the crystal c-axes in the first magnetic layer are aligned and oriented along an ABS in a film plane, the second magnetic layer is disposed adjacent to the first magnetic layer in the field region, and the crystal c-axis directions in the second magnetic layer are distributed at random in a plane.

摘要翻译： 本发明涉及在磁阻元件的两个相对的接合壁表面附近的磁性层中对准晶体c轴，以便几乎垂直于接合壁表面。 磁传感器堆叠体在磁阻元件的相对的接合壁表面的侧面上具有用于向元件施加偏置磁场的场区域。 场区具有第一和第二磁性层，具有具有晶体c轴的磁性颗粒，第一磁性层与场区域中的接合壁表面相邻地设置，第一磁性层中的晶体c轴对准并定向 在膜平面中的ABS，第二磁性层与场区域中的第一磁性层相邻地设置，并且第二磁性层中的晶体c轴方向在平面内随机分布。

公开(公告)号：US20110297537A1

公开(公告)日：2011-12-08

申请号：US13151759

申请日：2011-06-02

申请人： Tetsuya Endo ,  Einstein Noel Abarra

发明人： Tetsuya Endo ,  Einstein Noel Abarra

IPC分类号： C23C14/35 ,  H01F7/02

CPC分类号： H01J37/3408 ,  H01J37/3452

摘要： The present invention provides a magnet unit and a magnetron sputtering apparatus which can suppress the consumption amount of a target by efficiently consuming the target and can easily cause erosion on the target to progress uniformly regardless whether the target size is small or large and whether the target is made of magnetic material or not. A magnet unit according to an embodiment of the present invention includes a member configured to be provided with a predetermined magnet, an internal magnet unit which is provided for the member and includes n magnet elements extending radially in the surface of the member from a predetermined position of the member in at least n (n: positive integer equal to or larger than 3) directions, the n magnet elements having one polarity on a side opposite to the member, and an external magnet unit which is provided for the member so as to surround the internal magnet unit along the shape of the internal magnet unit, the external magnet unit having the other polarity on a side opposite to the member.

摘要翻译： 本发明提供一种磁体单元和磁控管溅射装置，其能够通过有效地消耗目标物来抑制目标物的消耗量，并且能够容易地使目标物的侵蚀均匀地进行，而不管目标尺寸小还是大，以及靶 是由磁性材料制成的。 根据本发明的实施例的磁体单元包括构造成设置有预定磁体的构件，为该构件设置的内部磁体单元，并且包括从构件的表面中的预定位置径向延伸的n个磁体元件 的至少n（n：正整数等于或大于3）的方向，n个磁体元件在与构件相对的一侧具有一个极性，并且外部磁体单元设置成用于该构件 沿着内部磁体单元的形状包围内部磁体单元，外部磁体单元在与构件相对的一侧具有另一极性。

公开(公告)号：US08048277B2

公开(公告)日：2011-11-01

申请号：US13058709

申请日：2009-07-09

申请人： Tetsuya Endo ,  Einstein Noel Abarra

发明人： Tetsuya Endo ,  Einstein Noel Abarra

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  H01J37/3405 ,  H01J37/3452

摘要： A magnet unit, which can realize uniform film thickness distribution of a thin film formed on a substrate without increasing the length and width of a target. The magnet unit includes a peripheral magnet, which is disposed on the yoke on the back side of a cathode electrode so as to follow the outline of a target, and an inner magnet disposed in the peripheral magnet and having a polarity different from the polarity of the peripheral magnet. The magnet unit provides a magnetic track MT that is a set of regions which tangents of magnetic field lines M generated on the target parallels to the target surface. The magnet unit further includes n (n is a positive integer of two or more) extending magnetic pole portions and n−1 projecting magnetic pole portions, which form 2n−1 folded shape portions U at the both ends in the longitudinal direction of the magnetic track.

摘要翻译： 一种磁体单元，其可以在不增加靶的长度和宽度的情况下实现在基板上形成的薄膜的均匀膜厚分布。 磁体单元包括外围磁体，该外围磁体设置在阴极背面的磁轭上，以便遵循目标的轮廓，并且设置在周边磁体中的具有与极性不同的极性的内磁体 外围磁铁。 磁体单元提供磁道MT，该磁道MT是与目标表面平行的在目标上产生的磁场线M的切线的一组区域。 磁体单元还包括在磁体的长度方向上的两端形成2n-1个折叠形状部分U的n（n是两个或更多个的正整数）的磁极部分和n-1个突出的磁极部分 跟踪。

公开(公告)号：US20110155569A1

公开(公告)日：2011-06-30

申请号：US12975962

申请日：2010-12-22

申请人： Tetsuya ENDO ,  Einstein Noel Abarra

发明人： Tetsuya ENDO ,  Einstein Noel Abarra

IPC分类号： F28F13/00 ,  C23C14/34

CPC分类号： H05K7/20009 ,  F25D25/027 ,  H01J37/34 ,  H05K7/20372 ,  H05K7/20545

摘要： A cooling system that cools a wafer in a vacuum chamber of a sputtering apparatus, includes a wafer cooling stage for cooling the wafer, a cooling mechanism for cooling the wafer cooling stage, cooling gas supply units which introduces a cooling gas to the wafer cooling stage, a wafer rotating mechanism which holds the wafer in a state separated from the wafer cooling stage by a predetermined gap, and is rotated while holding the wafer, and a driving mechanism which rotates the wafer rotating mechanism at a predetermined rotational speed.

摘要翻译： 在溅射装置的真空室中冷却晶片的冷却系统包括用于冷却晶片的晶片冷却阶段，用于冷却晶片冷却级的冷却机构，将冷却气体引入到晶片冷却级的冷却气体供给单元 晶片旋转机构，其将晶片保持在与晶片冷却台分离预定间隙的状态，并且在保持晶片的同时旋转;以及驱动机构，其以预定旋转速度旋转晶片旋转机构。

公开(公告)号：US07955480B2

公开(公告)日：2011-06-07

申请号：US12683921

申请日：2010-01-07

申请人： Tetsuya Endo ,  Einstein Noel Abarra

发明人： Tetsuya Endo ,  Einstein Noel Abarra

IPC分类号： C23C14/35

CPC分类号： C23C14/225 ,  C23C14/042 ,  C23C14/16

摘要： The present invention provides a sputtering apparatus and a film deposition method capable of forming a magnetic film with reduced variations in the direction of magnetic anisotropy. The sputtering apparatus of the present invention is provided with a rotatable cathode (802), a rotatable stage (801) and a rotatable shielding plate (805). The sputtering apparatus controls the rotation of at least one of the cathode (802), stage (801) and shielding plate (805) so that sputtered particles impinging at an angle formed with respect to a normal line of the substrate (804) of 0° or more and 50° or less out of sputtered particles generated from the target (803a) during sputtering are made to impinge on the substrate (804).

摘要翻译： 本发明提供能够形成具有减小磁各向异性方向变化的磁性膜的溅射装置和成膜方法。 本发明的溅射装置设置有可旋转的阴极（802），可旋转的台（801）和可旋转的屏蔽板（805）。 溅射装置控制阴极（802），载物台（801）和屏蔽板（805）中的至少一个的旋转，使得以相对于基板（804）的法线形成的角度为0的溅射颗粒入射 使溅射时从靶（803a）产生的溅射粒子的角度θ°以上且50°以下，使其撞击在基板（804）上。

公开(公告)号：US09299544B2

公开(公告)日：2016-03-29

申请号：US13334859

申请日：2011-12-22

申请人： Tetsuya Endo

发明人： Tetsuya Endo

IPC分类号： C23C14/00 ,  C25B11/00 ,  C25B13/00 ,  H01J37/34 ,  C23C14/34 ,  C23C14/35

CPC分类号： H01J37/3455 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3435

摘要： A sputtering apparatus includes a target electrode capable of mounting a target, a first support member which supports the target electrode, a magnet unit which forms a magnetic field on a surface of the target, a second support member which supports the magnet unit, and a force generation portion which is provided between the first support member and the second support member, and generates a second force in a direction opposite to a first force that acts on the second support member by an action of the magnetic field formed between the target and the magnet unit, wherein the second force has a magnitude which increases as the magnet unit comes closer to the target electrode.

摘要翻译： 溅射装置包括能够安装靶的目标电极，支撑目标电极的第一支撑构件，在靶的表面上形成磁场的磁体单元，支撑磁体单元的第二支撑构件，以及 力产生部分，其设置在第一支撑构件和第二支撑构件之间，并且通过形成在目标和第二支撑构件之间的磁场的作用沿与第二支撑构件作用的第一力相反的方向产生第二力 磁体单元，其中所述第二力具有随着所述磁体单元靠近所述目标电极而增加的大小。

公开(公告)号：US08810974B2

公开(公告)日：2014-08-19

申请号：US12849907

申请日：2010-08-04

申请人： Abarra Einstein Noel ,  Masahiro Suenaga ,  Yoshinori Ota ,  Tetsuya Endo

发明人： Abarra Einstein Noel ,  Masahiro Suenaga ,  Yoshinori Ota ,  Tetsuya Endo

IPC分类号： G11B5/39 ,  G11B5/31 ,  H01L43/08 ,  H01L43/12 ,  G01R33/09

CPC分类号： G11B5/3932 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/398 ,  H01L43/08 ,  H01L43/12

摘要： The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall faces of a magnetoresistive element so as to be almost perpendicular to the junction wall faces. A magnetic sensor stack body has, on a substrate, a magnetoresistive element whose electric resistance fluctuates when a bias magnetic field is applied and, on sides of opposed junction wall faces of the magnetoresistive element, field regions including magnetic layers for applying the bias magnetic field to the element. The magnetoresistive element has at least a ferromagnetic stack on a part of an antiferromagnetic layer, and width of an uppermost face of the ferromagnetic stack along a direction in which the junction wall faces are opposed to each other is smaller than width of an uppermost face of the antiferromagnetic layer in the same direction.

摘要翻译： 本发明涉及在磁阻元件的两个相对的接合壁面附近的磁性层中对准晶体c轴，以便几乎垂直于接合壁面。 磁传感器堆叠体在衬底上具有在施加偏置磁场时其电阻波动的磁阻元件，并且在磁阻元件的相对的接合壁面的侧面包括用于施加偏置磁场的磁性层的场区域 到元素 磁阻元件在反铁磁层的一部分上具有至少一个铁磁性堆叠，并且铁磁性堆叠沿着接合壁所面对的方向的最上面的宽度小于彼此相对的方向的宽度 反铁磁层在同一方向。