发明授权
- 专利标题: Magnetic sensor stack body, method of forming the same, film formation control program, and recording medium
- 专利标题(中): 磁传感器堆叠体,其形成方法,成膜控制程序和记录介质
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申请号: US12849907申请日: 2010-08-04
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公开(公告)号: US08810974B2公开(公告)日: 2014-08-19
- 发明人: Abarra Einstein Noel , Masahiro Suenaga , Yoshinori Ota , Tetsuya Endo
- 申请人: Abarra Einstein Noel , Masahiro Suenaga , Yoshinori Ota , Tetsuya Endo
- 申请人地址: JP Kawasaki-shi
- 专利权人: Canon Anelva Corporation
- 当前专利权人: Canon Anelva Corporation
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Fitzpatrick, Cella, Harper & Scinto
- 优先权: JP2009-181479 20090804; JP2009-219943 20090925; JP2010-149407 20100630
- 主分类号: G11B5/39
- IPC分类号: G11B5/39 ; G11B5/31 ; H01L43/08 ; H01L43/12 ; G01R33/09
摘要:
The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall faces of a magnetoresistive element so as to be almost perpendicular to the junction wall faces. A magnetic sensor stack body has, on a substrate, a magnetoresistive element whose electric resistance fluctuates when a bias magnetic field is applied and, on sides of opposed junction wall faces of the magnetoresistive element, field regions including magnetic layers for applying the bias magnetic field to the element. The magnetoresistive element has at least a ferromagnetic stack on a part of an antiferromagnetic layer, and width of an uppermost face of the ferromagnetic stack along a direction in which the junction wall faces are opposed to each other is smaller than width of an uppermost face of the antiferromagnetic layer in the same direction.
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