公开(公告)号：US09758367B2

公开(公告)日：2017-09-12

申请号：US14963998

申请日：2015-12-09

申请人： Analog Devices, Inc.

发明人： Bradley C. Kaanta

IPC分类号： H01L23/02 ,  B81B7/00 ,  B81C1/00

CPC分类号： B81B7/0006 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0118 ,  B81B2207/015 ,  B81B2207/07 ,  B81C1/0015 ,  B81C1/00682 ,  B81C1/00698 ,  B81C2201/0161 ,  B81C2201/0176

摘要： Various embodiments produce a semiconductor device, such a MEMS device, having metallized structures formed by replacing a semiconductor structure with a metal structure. Some embodiments expose a semiconductor structure to one or more a reacting gasses, such as gasses including tungsten or molybdenum.

公开(公告)号：US09685611B2

公开(公告)日：2017-06-20

申请号：US15196197

申请日：2016-06-29

申请人： International Business Machines Corporation

发明人： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

IPC分类号： H01L21/00 ,  H01L49/00 ,  H01L29/423 ,  H01L21/306 ,  H01L21/465 ,  H01L21/02 ,  H01L27/092

CPC分类号： B81B3/0086 ,  B81B7/0058 ,  B81B2203/0307 ,  B81B2203/033 ,  B81C1/00039 ,  B81C1/00698 ,  B81C2201/017 ,  B81C2203/0764 ,  B82Y10/00 ,  C08K5/34 ,  G06N3/0635 ,  H01L21/00 ,  H01L21/02263 ,  H01L21/30625 ,  H01L21/465 ,  H01L27/092 ,  H01L29/42316 ,  H01L49/00

摘要： An electromechanical device comprises a substrate structure, a set of electrodes, one or more anchor trenches, and one or more multi-faced components. For example, each of the one or more multi-faced components comprises an isolation region formed on a first portion of the surface of the component, a high resistance region formed on a second portion of the surface of the component, and a low resistance region formed on a third portion of the surface of the component. For example, the synapse device is configured to provide an analog resistive output, ranging between the high resistance region and the low resistance region, from at least one of the set of electrodes in response to a pulsed voltage input to at least another one of the set of electrodes.

公开(公告)号：US20170168085A1

公开(公告)日：2017-06-15

申请号：US15363333

申请日：2016-11-29

申请人： INVENSENSE INTERNATIONAL, INC.

发明人： Giacomo Gafforelli ,  Luca Coronato ,  Adolfo Giambastiani

IPC分类号： G01P21/00 ,  G01P15/125

CPC分类号： G01P21/00 ,  B81B2201/0235 ,  B81C1/00698 ,  G01P15/125 ,  G01P2015/0831

摘要： A microelectromechanical (MEMS) sensor, such as an accelerometer, has one more proof masses that respond to movement of the sensor, the movement of which is measured based on a distance between the one or more proof masses and on one or more sense electrodes. The accelerometer also has a plurality of auxiliary electrodes and a signal generator configured to apply an auxiliary signal having a first harmonic frequency to the plurality of auxiliary electrodes. Circuitry receives a sensed signal from the plurality of sense electrodes and identifies a portion of the sensed signal having the first harmonic frequency. Based on this identified portion of the sensed signal, the circuitry determines whether a residual voltage is present on the one or more proof masses or on the one or more sense electrodes, and the circuitry modifies the operation of the accelerometer when the residual voltage is determined to be present in order to compensate for the residual voltage.

公开(公告)号：US20170084837A1

公开(公告)日：2017-03-23

申请号：US15196197

申请日：2016-06-29

申请人： International Business Machines Corporation

发明人： QING CAO ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

IPC分类号： H01L49/00 ,  H01L27/092 ,  H01L21/465 ,  H01L21/02 ,  H01L29/423 ,  H01L21/306

CPC分类号： B81B3/0086 ,  B81B7/0058 ,  B81B2203/0307 ,  B81B2203/033 ,  B81C1/00039 ,  B81C1/00698 ,  B81C2201/017 ,  B81C2203/0764 ,  B82Y10/00 ,  C08K5/34 ,  G06N3/0635 ,  H01L21/00 ,  H01L21/02263 ,  H01L21/30625 ,  H01L21/465 ,  H01L27/092 ,  H01L29/42316 ,  H01L49/00

摘要： An electromechanical device comprises a substrate structure, a set of electrodes, one or more anchor trenches, and one or more multi-faced components. For example, each of the one or more multi-faced components comprises an isolation region formed on a first portion of the surface of the component, a high resistance region formed on a second portion of the surface of the component, and a low resistance region formed on a third portion of the surface of the component. For example, the synapse device is configured to provide an analog resistive output, ranging between the high resistance region and the low resistance region, from at least one of the set of electrodes in response to a pulsed voltage input to at least another one of the set of electrodes.

公开(公告)号：US09553013B2

公开(公告)日：2017-01-24

申请号：US14633024

申请日：2015-02-26

申请人： QUALCOMM Incorporated

发明人： Michael A. Stuber ,  George Imthurn

IPC分类号： H01L21/30 ,  H01L21/762 ,  H01L21/84 ,  H01L21/02 ,  H01L21/20 ,  H01L21/768 ,  H01L21/302 ,  H01L23/48 ,  H01L29/78 ,  H01L27/12 ,  B81C1/00

CPC分类号： H01L21/76251 ,  B81C1/00238 ,  B81C1/00698 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/02178 ,  H01L21/2007 ,  H01L21/302 ,  H01L21/76224 ,  H01L21/76256 ,  H01L21/76898 ,  H01L21/84 ,  H01L23/481 ,  H01L27/1203 ,  H01L29/7803 ,  H01L2224/80001 ,  H01L2224/9202 ,  H01L2924/1461 ,  H01L2924/00

摘要： A method is disclosed. The method comprises fabricating a device layer on a top portion of a semiconductor wafer that comprises a substrate. The device layer comprises an active device. The method also comprises forming a trap rich layer at a top portion of a handle wafer. The forming comprises etching the top portion of the handle wafer to form a structure in the top portion of the handle wafer that configures the trap rich layer. The method also comprises bonding a top surface of the handle wafer to a top surface of the semiconductor wafer. The method also comprises removing a bottom substrate portion of the semiconductor wafer.

摘要翻译： 公开了一种方法。 该方法包括在包括衬底的半导体晶片的顶部上制造器件层。 器件层包括有源器件。 该方法还包括在处理晶片的顶部形成富含阱的层。 成形包括蚀刻处理晶片的顶部部分，以在构造陷阱富集层的手柄晶片的顶部部分中形成结构。 该方法还包括将手柄晶片的顶表面接合到半导体晶片的顶表面。 该方法还包括去除半导体晶片的底部衬底部分。

公开(公告)号：US20160308507A1

公开(公告)日：2016-10-20

申请号：US14686509

申请日：2015-04-14

申请人： International Business Machines Corporation

发明人： Johan B.C. Engelen ,  Mark A. Lantz ,  Wabe W. Koelmans

IPC分类号： H03H9/02

CPC分类号： H03H9/02393 ,  B81B3/0045 ,  B81B3/007 ,  B81B7/008 ,  B81B2203/0163 ,  B81C1/00698 ,  B81C2201/017 ,  H02N11/00 ,  H03H9/02244 ,  H03H2009/02165 ,  H03H2009/02299 ,  H03H2009/02322

摘要： A mechanical resonator includes a spring-mass system, wherein the spring-mass system comprises a phase-change material. The mechanical resonator typically comprises an electrical circuit portion, coupled to the phase-change material to alter a phase configuration within the phase-change material. Methods of operation are also disclosed.

摘要翻译： 机械谐振器包括弹簧质量系统，其中弹簧质量系统包括相变材料。 机械谐振器通常包括耦合到相变材料的电路部分，以改变相变材料内的相位配置。 还公开了操作方法。

公开(公告)号：US20160233097A1

公开(公告)日：2016-08-11

申请号：US15007867

申请日：2016-01-27

申请人： THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA

发明人： Robert W. Carpick ,  Frank Streller ,  Rahul Agarwal ,  Filippo Mangolini

IPC分类号： H01L21/285 ,  C01B33/06 ,  H01L29/45 ,  H01L21/768 ,  B81C1/00 ,  B81B3/00

CPC分类号： H01L21/28518 ,  B81B3/0086 ,  B81B2201/01 ,  B81B2203/04 ,  B81C1/00698 ,  B81C2201/0181 ,  C01B33/06 ,  H01L29/456 ,  H01L29/84

摘要： The disclosed subject matter provides thin films including a metal silicide and methods for forming such films. The disclosed subject matter can provide techniques for tailoring the electronic structure of metal thin films to produce desirable properties. In example embodiments, the metal silicide can comprise a platinum silicide, such as for example, PtSi, Pt2Si, or Pt3Si. For example, the disclosed subject matter provides methods which include identifying a desired phase of a metal silicide, providing a substrate, depositing at least two film layers on the substrate which include a first layer including amorphous silicon and a second layer including metal contacting the first layer, and annealing the two film layers to form a metal silicide. Methods can be at least one of a source-limited method and a kinetically-limited method. The film layers can be deposited on the substrate using techniques known in the art including, for example, sputter depositing.

摘要翻译： 所公开的主题提供了包括金属硅化物的薄膜和用于形成这种膜的方法。 所公开的主题可以提供用于定制金属薄膜的电子结构以产生期望特性的技术。 在示例性实施例中，金属硅化物可以包括铂硅化物，例如PtSi，Pt 2 Si或Pt 3 Si。 例如，所公开的主题提供了包括识别金属硅化物的期望相位，提供衬底，在衬底上沉积至少两个膜层的方法，该至少两个膜层包括包含非晶硅的第一层和包括与第一层接触的金属的第二层 层，并且退火两个膜层以形成金属硅化物。 方法可以是源限制方法和动力学限制方法中的至少一种。 可以使用本领域已知的技术将膜层沉积在基板上，包括例如溅射沉积。

公开(公告)号：US20160069926A1

公开(公告)日：2016-03-10

申请号：US14698329

申请日：2015-04-28

申请人： Samsung Electro-Mechanics Co., ltd.,

发明人： Tae Yoon KIM ,  Seung Hoon HAN ,  Chang Hyun LIM

IPC分类号： G01P15/12 ,  G01L1/16

CPC分类号： G01P15/123 ,  B81B7/0029 ,  B81B2201/0235 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00698 ,  G01P2015/0842

摘要： There is provided an acceleration sensor in which outer surfaces of a plurality of beams in which piezo-resistive elements are provided and upper portions of a mass body and a support body connected to the plurality of beams may be enclosed by a protective layer to prevent electrical disturbances from being transferred from an external environment to the piezo-resistive elements.

摘要翻译： 提供一种加速度传感器，其中设置有压阻元件的多个梁的外表面，连接到多个梁的质量体和支撑体的上部可以被保护层包围以防止电气 干扰从外部环境转移到压阻元件。

公开(公告)号：US09266713B2

公开(公告)日：2016-02-23

申请号：US13261882

申请日：2011-11-14

申请人： Leif Steen Johansen ,  Jan Tue Ravnkilde ,  Pirmin Hermann Otto Rombach ,  Kurt Rasmussen ,  Dennis Mortensen

发明人： Leif Steen Johansen ,  Jan Tue Ravnkilde ,  Pirmin Hermann Otto Rombach ,  Kurt Rasmussen ,  Dennis Mortensen

IPC分类号： B81B3/00 ,  H04R19/00 ,  B81C1/00 ,  H04R31/00

CPC分类号： B81B3/0086 ,  B81C1/00158 ,  B81C1/00698 ,  H04R19/005 ,  H04R31/006 ,  H04R2201/003 ,  Y10T428/24273

摘要： A MEMS backplate enables MEMS microphones with reduced parasitic capacitance. The MEMS backplate includes a central area and a perforation in the central area. A suspension area surrounds the central area at least partially. An aperture is disposed in the suspension area.

摘要翻译： MEMS背板使MEMS麦克风具有减小的寄生电容。 MEMS背板包括中心区域和中心区域中的穿孔。 悬挂区域至少部分地围绕中心区域。 在悬挂区域设置有孔。

公开(公告)号：US09207138B2

公开(公告)日：2015-12-08

申请号：US14161740

申请日：2014-01-23

申请人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION ,  Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Qiyang He ,  Chenglong Zhang

IPC分类号： G01L9/00 ,  B81C1/00

CPC分类号： G01L9/0073 ,  B81B3/0021 ,  B81B2201/0264 ,  B81C1/00134 ,  B81C1/00698

摘要： A capacitive pressure sensor is provided. The capacitive pressure sensor includes a substrate; and a first electrode formed in one surface of the substrate and vertical to the surface of the substrate. The capacitive pressure sensor also includes a second electrode with a portion facing the first sub-electrode, a portion facing the second sub-electrode and a portion formed in the other surface of the substrate. Further, the capacitive pressure sensor includes a first chamber between the first electrode and the second electrode and a second chamber formed in the second electrode. Further, the pressure sensor also includes a first sealing layer formed on the second electrode; and a second sealing layer formed on the other surface of the substrate.

摘要翻译： 提供电容式压力传感器。 电容式压力传感器包括基板; 以及形成在所述基板的一个表面中且垂直于所述基板的表面的第一电极。 电容式压力传感器还包括具有面向第一子电极的部分的第二电极，面对第二子电极的部分和形成在基板的另一表面中的部分。 此外，电容式压力传感器包括在第一电极和第二电极之间的第一室和形成在第二电极中的第二室。 此外，压力传感器还包括形成在第二电极上的第一密封层; 以及形成在所述基板的另一个表面上的第二密封层。