公开(公告)号：US20240222652A1

公开(公告)日：2024-07-04

申请号：US18550084

申请日：2022-03-04

申请人： UNIVERSITY OF PITTSBURGH - OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION

发明人： Prashant N. Kumta ,  Shrinath Dattatray Ghadge ,  Oleg Velikokhatnyi ,  Moni Kanchan Datta

IPC分类号： H01M4/92 ,  C01B33/06

CPC分类号： H01M4/921 ,  C01B33/06 ,  H01M4/923 ,  C01P2002/50 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/03 ,  C01P2006/40

摘要： The invention relates to systems and methods for successful operation of acid mediated proton exchange membrane fuel cell (PEMFC), and highly efficient, earth-abundant, and ultra-low noble metal-containing, e.g., platinum group metal (PGM)-containing, electrocatalyst materials for anodic hydrogen oxidation reaction (HOR). The electrocatalyst materials include metal silicide alloy-based solid solutions of the general formula: (A(n-x)Bx)Siy, wherein A is a transition metal element or mixture or alloy thereof, B is a noble metal element or mixture or alloy thereof, and each of n and x, is a positive integer or a positive fractional number, and y is a positive integer.

公开(公告)号：US11932579B2

公开(公告)日：2024-03-19

申请号：US17293062

申请日：2019-11-15

申请人： KANTHAL AB

发明人： Erik Ström ,  Maria Ivermark

IPC分类号： C04B35/58 ,  C01B33/06 ,  C04B33/06 ,  C04B35/63 ,  C04B35/64 ,  H05B3/14

CPC分类号： C04B35/58092 ,  C01B33/06 ,  C04B35/6303 ,  C04B35/64 ,  H05B3/141 ,  C04B2235/349 ,  C04B2235/3891 ,  C04B2235/604 ,  C04B2235/656 ,  C04B2235/661 ,  H05B2203/017

摘要： A process of manufacturing a chromium alloyed molybdenum silicide portion of a heating element comprising the steps of: forming a mixture of a chromium powder and a silicon powder; reacting the mixture to a reaction product in an inert atmosphere at a temperature of at least 1100° C. but not more than 1580° C.; converting the reaction product to a powder comprising CrSi2; forming a powder ceramic composition by mixing the powder comprising CrSi2 with a MoSi2 powder and optionally with an extrusion aid; forming the portion of the heating element; and sintering the portion of the heating element in a temperature of from about 1450° C. to about 1700° C.; characterized in that the chromium powder and the silicon powder are provided separately to the mixture.

公开(公告)号：US11901556B2

公开(公告)日：2024-02-13

申请号：US17960597

申请日：2022-10-05

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Hiroyuki Yamaguchi ,  Hironori Daikoku ,  Jun Yoshida ,  Kazuhiro Suzuki ,  Mitsutoshi Otaki

IPC分类号： H01M4/58 ,  C01B33/06 ,  H01M10/0525 ,  H01M10/0565

CPC分类号： H01M4/58 ,  C01B33/06 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2006/40

摘要： A main object of the present disclosure is to provide an active material wherein an expansion upon intercalation of a metal ion such as a Li ion is suppressed. The present disclosure achieves the object by providing an active material comprising a silicon clathrate type crystal phase, and the active material includes a Na element, a Si element and a M element that is a metal element with an ion radius larger than the Si element, and a proportion of the M element to a total of the Si element and the M element is 0.1 atm % or more and 5 atm % or less.

公开(公告)号：US20230183844A1

公开(公告)日：2023-06-15

申请号：US17999050

申请日：2021-05-17

申请人： TOSOH CORPORATION

发明人： Ryo AKIIKE ,  Yoichiro KODA ,  Masami MESUDA

IPC分类号： C22C30/00 ,  C22C24/00 ,  H10N10/851 ,  C01B33/06

CPC分类号： C22C30/00 ,  C22C24/00 ,  H10N10/8556 ,  C01B33/06 ,  C22C2202/02 ,  C01P2006/40 ,  C01P2006/32 ,  C01P2002/60

摘要： A silicide-based alloy material and a device in which the silicide-based alloy material is used are disclosed. The silicide-based alloy material can reduce environmental impact and provide high thermoelectric FIGURE of merit at room temperature. Provided is a silicide-based alloy material comprising, as major components, silver, barium and silicon, wherein atomic ratios of elements that constitute the alloy material are as follows: 9 at %≤Ag/(Ag+Ba+Si)≤27 at %, 20 at %≤Ba/(Ag+Ba+Si)≤53 at %, and 37 at %≤Si/(Ag+Ba+Si)≤65 at %, where Ag represents a content of the silver, Ba represents a content of the barium and Si represents a content of the silicon, and the silicide-based alloy material has an average grain size of less than or equal to 20 μm.

公开(公告)号：US20190245129A1

公开(公告)日：2019-08-08

申请号：US16314841

申请日：2017-07-05

申请人： Tokyo University of Science Foundation

发明人： Tsutomu IIDA ,  Syunsuke KONDO ,  Mitsunobu NAKATANI

IPC分类号： H01L35/14 ,  B22F3/10 ,  H01L35/26 ,  H01L35/34 ,  H01L35/28 ,  C01B33/06 ,  C04B35/58

CPC分类号： H01L35/14 ,  B22F3/10 ,  B22F2302/45 ,  C01B33/06 ,  C04B35/58 ,  C22C1/02 ,  C22C1/04 ,  C22C23/00 ,  H01L35/22 ,  H01L35/26 ,  H01L35/28 ,  H01L35/34

摘要： Polycrystalline magnesium silicide containing only carbon as a dopant and having carbon distributed at the crystal grain boundaries and within the crystal grains, a thermoelectric conversion material obtained using the polycrystalline magnesium silicide, a sintered compact, a thermoelectric conversion element, and a thermoelectric conversion module, and methods for producing polycrystalline magnesium silicide and a sintered compact.

公开(公告)号：US20180178292A1

公开(公告)日：2018-06-28

申请号：US15850375

申请日：2017-12-21

申请人： Pioneer Astronautics

发明人： Mark Berggren ,  Robert Zubrin ,  Jonathan David Rasmussen

IPC分类号： B22F9/22 ,  C01B33/025 ,  C01B33/06 ,  C22B5/12 ,  C22B26/22 ,  B33Y70/00 ,  C25B1/04

CPC分类号： B22F9/22 ,  B22F2201/013 ,  B22F2201/04 ,  B22F2202/09 ,  B22F2301/058 ,  B22F2301/35 ,  B22F2999/00 ,  B33Y70/00 ,  C01B33/025 ,  C01B33/06 ,  C21B13/0073 ,  C21B15/00 ,  C22B5/12 ,  C22B26/22 ,  C25B1/04 ,  Y02E60/366 ,  Y02P10/216

摘要： Novel methods for the production of iron, silicon, and magnesium metal from extraterrestrial and terrestrial resources are described. The methods employ processing steps including metal oxide reduction using carbon monoxide, carbon, hydrogen, and methane. Methods to prepare, regenerate, and recycle reductants to minimize mining and purchase of fresh materials and to minimize carbon emissions are included.

公开(公告)号：US20180174851A1

公开(公告)日：2018-06-21

申请号：US15890465

申请日：2018-02-07

申请人： THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA

发明人： Robert W. Carpick ,  Frank Streller ,  Rahul Agarwal ,  Filippo Mangolini

IPC分类号： H01L21/285 ,  C01B33/06 ,  H01L29/45 ,  B81C1/00 ,  B81B3/00 ,  H01L29/84

CPC分类号： H01L21/28518 ,  B81B3/0086 ,  B81B2201/01 ,  B81B2203/04 ,  B81C1/00698 ,  B81C2201/0181 ,  C01B33/06 ,  H01L29/456 ,  H01L29/84

摘要： The disclosed subject matter provides thin films including a metal silicide and methods for forming such films. The disclosed subject matter can provide techniques for tailoring the electronic structure of metal thin films to produce desirable properties. In example embodiments, the metal silicide can comprise a platinum silicide, such as for example, PtSi, Pt2Si, or Pt3Si. For example, the disclosed subject matter provides methods which include identifying a desired phase of a metal silicide, providing a substrate, depositing at least two film layers on the substrate which include a first layer including amorphous silicon and a second layer including metal contacting the first layer, and annealing the two film layers to form a metal silicide. Methods can be at least one of a source-limited method and a kinetically-limited method. The film layers can be deposited on the substrate using techniques known in the art including, for example, sputter depositing.

公开(公告)号：US20180021747A1

公开(公告)日：2018-01-25

申请号：US15541583

申请日：2016-03-15

申请人： Dow Corning Corporation

发明人： Mark Berglund ,  Aaron Coppernoll ,  Patrick James Harder ,  Dimitris Katsoulis ,  Vladimir Pushkarev

IPC分类号： B01J8/18 ,  C01B33/06 ,  C01B33/107

CPC分类号： B01J8/1836 ,  B01J8/1818 ,  B01J8/1827 ,  B01J2208/00407 ,  B01J2208/0053 ,  B01J2208/00681 ,  B01J2208/00805 ,  C01B33/06 ,  C01B33/1071

摘要： A method is useful for maintaining a uniformly fluidized bed in a fluidized bed apparatus. The method includes the steps of charging a mixture of particles including copper silicide particles and fluidization additive particles into the fluidized bed apparatus, and uniformly fluidizing the particles at a temperature of at least 400° C. in the fluidized bed apparatus.

公开(公告)号：US20170200949A1

公开(公告)日：2017-07-13

申请号：US15314421

申请日：2015-05-26

申请人： KABUSHIKI KAISHA TOYOTA JIDOSHOKKI

发明人： Masanori HARATA ,  Takashi MOHRI

IPC分类号： H01M4/38 ,  H01M10/0525 ,  H01G11/86 ,  C01B33/06 ,  H01G11/50

CPC分类号： H01M4/386 ,  C01B33/06 ,  H01G11/30 ,  H01G11/50 ,  H01G11/86 ,  H01M10/052 ,  H01M10/0525 ,  Y02E60/13 ,  Y02T10/7022

摘要： A negative electrode active material having improved electron conductivity is provided.A reaction between an acid and a copper-containing calcium silicide represented by CaCuxSiy is caused, and a heat treatment is performed in a non-oxidizing atmosphere on the reaction product, to obtain a copper-containing silicon material. The copper-containing silicon material contains Si and copper in an amorphous phase, and fine copper silicide is uniformly deposited within the amorphous phase. Thus, electron conductivity improves. Therefore, a secondary battery in which the negative electrode active material is used as a negative electrode has improved rate characteristics and also has an increased charge/discharge capacity.

公开(公告)号：US20160332149A1

公开(公告)日：2016-11-17

申请号：US15110229

申请日：2015-01-19

申请人： KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY ,  HANWHA CHEMICAL CORPORATION

发明人： WON CHOON CHOI ,  YONG KI PARK ,  WOO HYUNG LEE ,  HWI MIN SEO ,  NA YOUNG KANG ,  JOO HEE HAN ,  DONG HO LEE ,  GUI RYONG AHN ,  GIL HO KIM

IPC分类号： B01J23/755 ,  B01J10/00 ,  B01J37/02 ,  C01B33/107 ,  B01J23/72 ,  B01J35/02

CPC分类号： B01J23/755 ,  B01J4/002 ,  B01J10/007 ,  B01J21/06 ,  B01J23/72 ,  B01J35/026 ,  B01J37/0209 ,  B01J2523/00 ,  C01B33/06 ,  C01B33/1071 ,  C01B33/10763 ,  B01J2523/17 ,  B01J2523/31 ,  B01J2523/41 ,  B01J2523/842 ,  B01J2523/847

摘要： A method for preparing trichlorosilane according to an embodiment of the present invention comprises the steps of: supplying surface-modified metal silicide and metal grade silicon to a reaction unit; supplying silicon tetrachloride and hydrogen to the reaction unit; and supplying a product, which is generated by a reaction of metal grade silicon, silicon tetrachloride, and hydrogen in the presence of metal silicide in the reaction unit, to a separation unit, and separating a trichlorosilane component. In cases where a silicon tetrachloride hydrochlorination reaction is performed using the method for preparing trichlorosilane according to the embodiment of the present invention, the yield of trichlorosilane can be raised.

摘要翻译： 根据本发明实施方案的制备三氯硅烷的方法包括以下步骤：向反应单元提供表面改性的金属硅化物和金属级硅; 向反应单元供应四氯化硅和氢气; 在金属硅化物的存在下，通过金属级硅，四氯化硅和氢气在反应单元中的反应产生的产物分离成分离单元，分离出三氯硅烷组分。 在使用本发明的实施方式的三氯硅烷的制造方法进行四氯化氢氢氯化反应的情况下，可以提高三氯硅烷的产率。