公开(公告)号：US08946834B2

公开(公告)日：2015-02-03

申请号：US13409456

申请日：2012-03-01

Applicant: Yu-Jen Wang ,  Witold Kula ,  Guenole Jan

Inventor： Yu-Jen Wang ,  Witold Kula ,  Guenole Jan

IPC: G11C11/14 ,  H01L43/08 ,  G11C11/02 ,  H01F10/32 ,  G01R33/09

CPC classification number: G01R33/098 ,  G11B5/82 ,  G11C11/161 ,  H01F10/123 ,  H01F10/16 ,  H01F10/3231 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1143

Abstract: A CoFeB or CoFeNiB magnetic layer wherein the boron content is 25 to 40 atomic % and with a thickness

Abstract translation: 使用硼含量为25〜40原子％并且厚度<20埃的CoFeB或CoFeNiB磁性层来实现磁性器件中的高垂直磁各向异性和增强的热稳定性。 将Co，Ni，Fe或其合金制成的除尘层添加到CoFeB层的顶表面和底表面，以增加磁阻以及改善Hc和Hk。 另一实施例包括在CoFeB自由层中的非磁性金属插入。 具有升高的B含量的CoFeB层可以作为自由层偶极层或参考层并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。 热稳定性增加，使得在退火至至少400℃1小时后保留大量的Hk。 实现了Ku增强，并且用于STT-MRAM设计的存储单元的保留时间增加。

公开(公告)号：US08923038B2

公开(公告)日：2014-12-30

申请号：US13527173

申请日：2012-06-19

Applicant: Witold Kula ,  Gurtej S. Sandhu ,  Stephen J. Kramer

Inventor： Witold Kula ,  Gurtej S. Sandhu ,  Stephen J. Kramer

IPC: G11C11/15 ,  G11C11/00 ,  H01L29/82

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

Abstract: Methods of forming magnetic memory cells are disclosed. Magnetic and non-magnetic materials are formed into a primal precursor structure in an initial stress state of essentially no strain, compressive strain, or tensile strain. A stress-compensating material, e.g., a non-sacrificial, conductive material, is formed to be disposed on the primal precursor structure to form a stress-compensated precursor structure in a net beneficial stress state. Thereafter, the stress-compensated precursor structure may be patterned to form a cell core of a memory cell. The net beneficial stress state of the stress-compensated precursor structure lends to formation of one or more magnetic regions, in the cell core, exhibiting a vertical magnetic orientation without deteriorating a magnetic strength of the one or more magnetic regions. Also disclosed are memory cells, memory cell structures, semiconductor device structures, and spin torque transfer magnetic random access memory (STT-MRAM) systems.

Abstract translation: 公开了形成磁存储器单元的方法。 磁性和非磁性材料在基本上没有应变，压缩应变或拉伸应变的初始应力状态下形成原始前体结构。 形成应力补偿材料，例如非牺牲导电材料，以设置在原始前体结构上以在净有益应力状态下形成应力补偿前体结构。 此后，应力补偿前体结构可以被图案化以形成存储单元的单元芯。 应力补偿前体结构的净有益应力状态有助于在电池芯中形成一个或多个磁性区域，呈现垂直磁性取向而不会使一个或多个磁性区域的磁强度恶化。 还公开了存储器单元，存储单元结构，半导体器件结构和自旋转矩传递磁随机存取存储器（STT-MRAM）系统。

公开(公告)号：US08921961B2

公开(公告)日：2014-12-30

申请号：US13617432

申请日：2012-09-14

Applicant: Witold Kula ,  Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

Inventor： Witold Kula ,  Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

IPC: H01L29/82 ,  H01L21/02 ,  H01L21/00

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08

Abstract: An improved PMA STT MTJ storage element, and a method for forming it, are described. By inserting a suitable oxide layer between the storage and cap layers, improved PMA properties are obtained, increasing the potential for a larger Eb/kT thermal factor as well as a larger MR. Another important advantage is better compatibility with high processing temperatures, potentially facilitating integration with CMOS.

Abstract translation: 描述了改进的PMA STT MTJ存储元件及其形成方法。 通过在存储层和盖层之间插入合适的氧化物层，获得改进的PMA性质，增加更大的Eb / kT热因子的可能性以及较大的MR。 另一个重要的优点是更好的与高处理温度的兼容性，有可能促进与CMOS的集成。

公开(公告)号：US08722543B2

公开(公告)日：2014-05-13

申请号：US12804840

申请日：2010-07-30

Applicant: Rodolfo Belen ,  Rongfu Xiao ,  Tom Zhong ,  Witold Kula ,  Chyu-Jiuh Torng

Inventor： Rodolfo Belen ,  Rongfu Xiao ,  Tom Zhong ,  Witold Kula ,  Chyu-Jiuh Torng

IPC: H01L21/302 ,  H01L21/00

CPC classification number: H01L43/12 ,  Y10T428/12535 ,  Y10T428/24975 ,  Y10T428/266 ,  Y10T428/31504 ,  Y10T428/31678

Abstract: A composite hard mask is disclosed that prevents build up of metal etch residue in a MRAM device during etch processes that define an MTJ shape. As a result, MTJ shape integrity is substantially improved. The hard mask has a lower non-magnetic spacer, a middle conductive layer, and an upper sacrificial dielectric layer. The non-magnetic spacer serves as an etch stop during a pattern transfer with fluorocarbon plasma through the conductive layer. A photoresist pattern is transferred through the dielectric layer with a first fluorocarbon etch. Then the photoresist is removed and a second fluorocarbon etch transfers the pattern through the conductive layer. The dielectric layer protects the top surface of the conductive layer during the second fluorocarbon etch and during a substantial portion of a third RIE step with a gas comprised of C, H, and O that transfers the pattern through the underlying MTJ layers.

Abstract translation: 公开了一种复合硬掩模，其防止在限定MTJ形状的蚀刻工艺期间在MRAM器件中积累金属蚀刻残留物。 结果，MTJ形状完整性得到显着提高。 硬掩模具有较低的非磁性间隔物，中间导电层和上部牺牲介电层。 在通过导电层的氟碳等离子体的图案转印期间，非磁性间隔物用作蚀刻停止层。 光致抗蚀剂图案通过第一氟碳蚀刻转移通过电介质层。 然后去除光致抗蚀剂，并且第二氟碳蚀刻将图案转移通过导电层。 介电层在第二次氟碳蚀刻期间保护导电层的顶表面，并在第三次RIE步骤的大部分期间保护由C，H和O组成的气体，以将图案转移通过下面的MTJ层。

公开(公告)号：US20140017820A1

公开(公告)日：2014-01-16

申请号：US14032599

申请日：2013-09-20

Applicant: Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

Inventor： Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

IPC: H01L43/12

CPC classification number: H01L43/10 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3909 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A method for forming a MTJ in a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract translation: 公开了一种用于在自旋电子器件中形成MTJ的方法，并且包括在（Co / Ni）n组成的上覆层压层中增强垂直磁各向异性（PMA）的薄籽晶层。 种子层优选为NiCr，NiFeCr，Hf或其复合物。 此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。 叠层可以用作MTJ中的参考层，偶极子层或自由层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

公开(公告)号：US20130334630A1

公开(公告)日：2013-12-19

申请号：US13527173

申请日：2012-06-19

Applicant: Witold Kula ,  Gurtej S. Sandhu ,  Stephen J. Kramer

Inventor： Witold Kula ,  Gurtej S. Sandhu ,  Stephen J. Kramer

IPC: H01L29/82 ,  H01L21/8246

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

Abstract: Methods of forming magnetic memory cells are disclosed. Magnetic and non-magnetic materials are formed into a primal precursor structure in an initial stress state of essentially no strain, compressive strain, or tensile strain. A stress-compensating material, e.g., a non-sacrificial, conductive material, is formed to be disposed on the primal precursor structure to form a stress-compensated precursor structure in a net beneficial stress state. Thereafter, the stress-compensated precursor structure may be patterned to form a cell core of a memory cell. The net beneficial stress state of the stress-compensated precursor structure lends to formation of one or more magnetic regions, in the cell core, exhibiting a vertical magnetic orientation without deteriorating a magnetic strength of the one or more magnetic regions. Also disclosed are memory cells, memory cell structures, semiconductor device structures, and spin torque transfer magnetic random access memory (STT-MRAM) systems.

Abstract translation: 公开了形成磁存储器单元的方法。 磁性和非磁性材料在基本上没有应变，压缩应变或拉伸应变的初始应力状态下形成原始前体结构。 形成应力补偿材料，例如非牺牲导电材料，以设置在原始前体结构上以在净有益应力状态下形成应力补偿前体结构。 此后，应力补偿前体结构可以被图案化以形成存储单元的单元芯。 应力补偿前体结构的净有益应力状态有助于在电池芯中形成一个或多个磁性区域，呈现垂直磁性取向而不会使一个或多个磁性区域的磁强度恶化。 还公开了存储器单元，存储单元结构，半导体器件结构和自旋转矩传递磁随机存取存储器（STT-MRAM）系统。

公开(公告)号：US08492169B2

公开(公告)日：2013-07-23

申请号：US13136929

申请日：2011-08-15

Applicant: Wei Cao ,  Witold Kula ,  Chyu-Jiuh Torng

Inventor： Wei Cao ,  Witold Kula ,  Chyu-Jiuh Torng

IPC: H01L29/82 ,  H01L29/88 ,  G11C11/02

CPC classification number: H01L43/10 ,  B82Y40/00 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/12

Abstract: Reading margin is improved in a MTJ designed for MRAM applications by employing a pinned layer with an AP2/Ru/AP1 configuration wherein the AP1 layer is a CoFeB/CoFe composite and by forming a MgO tunnel barrier adjacent to the CoFe AP1 layer by a sequence that involves depositing and oxidizing a first Mg layer with a radical oxidation (ROX) process, depositing and oxidizing a second Mg layer with a ROX method, and depositing a third Mg layer on the oxidized second Mg layer. The third Mg layer becomes oxidized during a subsequent anneal. MTJ performance may be further improved by selecting a composite free layer having a Fe/NiFeHf or CoFe/Fe/NiFeHf configuration where the NiFeHf layer adjoins a capping layer in a bottom spin valve configuration. As a result, read margin is optimized simultaneously with improved MR ratio, a reduction in bit line switching current, and a lower number of shorted bits.

Abstract translation: 通过采用具有AP2 / Ru / AP1配置的钉扎层，其中AP1层是CoFeB / CoFe复合材料并且通过顺序形成与CoFe AP1层相邻的MgO隧道势垒，为MRAM应用设计的MTJ中的读取余量得到改善 其包括用自由基氧化（ROX）工艺沉积和氧化第一Mg层，用ROX法沉积和氧化第二Mg层，以及在氧化的第二Mg层上沉积第三Mg层。 在随后的退火中，第三Mg层变成氧化的。 通过选择具有Fe / NiFeHf或CoFe / Fe / NiFeHf构型的复合自由层，其中NiFeHf层与底部自旋阀结构中的覆盖层邻接，可以进一步改善MTJ性能。 结果，读取余量同时优化了MR比，降低了位线切换电流，并且更少的短路位数。

公开(公告)号：US20120286382A1

公开(公告)日：2012-11-15

申请号：US13068398

申请日：2011-05-10

Applicant: Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

Inventor： Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

IPC: H01L29/82 ,  H01L21/02

CPC classification number: H01L43/10 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3909 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract translation: 公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / Ni）n组合物等在上层叠层中提高垂直磁各向异性（PMA），其中n为2至30.种子层 优选为NiCr，NiFeCr，Hf，或其复合物，厚度为10〜100埃。 此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。 叠层可以用作MTJ中的参考层，偶极子层或自由层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

公开(公告)号：US20120280336A1

公开(公告)日：2012-11-08

申请号：US13068172

申请日：2011-05-04

Applicant: Guenole Jan ,  Ru Ying Tong ,  Witold Kula

Inventor： Guenole Jan ,  Ru Ying Tong ,  Witold Kula

IPC: H01L29/82 ,  H01L21/00

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic element is disclosed that has a composite free layer with a FM1/moment diluting/FM2 configuration wherein FM1 and FM2 are magnetic layers made of one or more of Co, Fe, Ni, and B and the moment diluting layer is used to reduce the perpendicular demagnetizing field. As a result, lower resistance x area product and higher thermal stability are realized when perpendicular surface anisotropy dominates shape anisotropy to give a magnetization perpendicular to the planes of the FM1, FM2 layers. The moment diluting layer may be a non-magnetic metal like Ta or a CoFe alloy with a doped non-magnetic metal. A perpendicular Hk enhancing layer interfaces with the FM2 layer and may be an oxide to increase the perpendicular anisotropy field in the FM2 layer. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.

Abstract translation: 公开了具有FM1 /力矩稀释/ FM2配置的复合自由层的磁性元件，其中FM1和FM2是由Co，Fe，Ni和B中的一种或多种构成的磁性层，并且力矩稀释层用于减少 垂直退磁场。 结果，当垂直表面各向异性支配形状各向异性以产生垂直于FM1，FM2层的平面的磁化时，实现较低的电阻x面积乘积和较高的热稳定性。 瞬时稀释层可以是非磁性金属如Ta或具有掺杂的非磁性金属的CoFe合金。 垂直Hk增强层与FM2层接合，并且可以是氧化物以增加FM2层中的垂直各向异性场。 磁性元件可以是自旋电子器件的一部分或用作域壁运动装置中的传播介质。

公开(公告)号：US20100258888A1

公开(公告)日：2010-10-14

申请号：US12803189

申请日：2010-06-21

Applicant: Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

Inventor： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

IPC: H01L29/82

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12

Abstract: An STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co60Fe20B20. of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.

Abstract translation: 利用转移自旋角动量作为改变自由层的磁矩方向的机构的STT-MTJ MRAM单元。 该器件包括形成在被钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，包含非晶态的自由层 Co60Fe20B20层。 分别在3和6埃的Fe的两个结晶层之间形成约20埃的厚度。 自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。 所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。