公开(公告)号：US20190253368A1

公开(公告)日：2019-08-15

申请号：US16270954

申请日：2019-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungjin Kim ,  Yongsuk Kwon ,  Myeongcheol Kim ,  Yoonsung Nam ,  Hyongjin Ban ,  Sangsoo Lee

IPC: H04L12/58

CPC classification number: H04L51/02 ,  H04L51/06

Abstract: An electronic device may be configured to receive a message for a second external electronic device, from a first external electronic device through a first network associated with the first external electronic device among a plurality of rich communication suite (RCS) networks using a communication circuit, to determine whether to transmit the message based on a profile of the second external electronic device including at least one throttling metric for the first network among the plurality of RCS networks stored in a memory and a network state of the first network, and to convert the message based on a protocol of a second network and to transmit the converted message to the second external electronic device through the second network based on determining to transmit the message.

公开(公告)号：US10056339B2

公开(公告)日：2018-08-21

申请号：US15628349

申请日：2017-06-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeon-Woo Jang ,  Junghwan Park ,  Ramakanth Kappaganthu ,  Sungjin Kim ,  Junyong Noh ,  Jung-Hoon Han ,  Seung Soo Kim ,  Sungjin Kim ,  Sojung Lee

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H01L23/58

CPC classification number: H01L23/562 ,  H01L23/585 ,  H01L2924/3512

Abstract: A semiconductor device includes a substrate, a first insulation layer, data storage elements, a contact plug, and a first dummy dam. The first insulation layer is on the substrate and includes a pad region and a peripheral region adjacent to the pad region. The data storage elements are on the pad region of the first insulation layer. The contact plug penetrates the first insulation layer on the peripheral region. The first dummy dam penetrates the first insulation layer and is disposed between the data storage elements and the contact plug.

公开(公告)号：US09787221B2

公开(公告)日：2017-10-10

申请号：US14827675

申请日：2015-08-17

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Research & Business Foundation Sungkyunkwan University

Inventor： Seongmin Kim ,  Sungjin Kim ,  Sang-woo Kim

IPC: H01L41/113 ,  H02N2/18 ,  H01L41/37 ,  H01L41/18 ,  H02S10/10

CPC classification number: H02N2/18 ,  H01L41/113 ,  H01L41/183 ,  H01L41/37 ,  H01L51/4213 ,  H01L2251/301 ,  H02S10/10 ,  Y02E10/549 ,  Y02P70/521

Abstract: An energy generating device and a method of manufacturing the same are provided. The energy generating device includes a first electrode, a metal layer, including a regular arrangement of a plurality of patterns, disposed on the first electrode, an organic material layer positioned on the metal layer, and a piezoelectric layer interposed between the first electrode and the organic material layer.

公开(公告)号：US09412900B2

公开(公告)日：2016-08-09

申请号：US14603103

申请日：2015-01-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Hee Cho ,  Sungjin Kim ,  Munbo Shim ,  Yukeun Eugene Pak

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/16

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/16 ,  H01L33/32

Abstract: Example embodiments relate to a green-light emitting device including a quaternary quantum well on a vicinal c-plane. The light-emitting device includes a substrate having a vicinal c-plane surface and a light-emitting layer on the vicinal c-plane surface of the substrate. The light-emitting layer includes a quantum well layer of AlxInyGa1-x-yN and quantum barrier layers of InzGa1-zN disposed on and under the quantum well layer respectively, and 0

Abstract translation: 示例性实施例涉及在邻C平面上包括四元量子阱的绿色发光器件。 发光装置包括具有邻C面的基板和位于基板的邻近c面的发光层。 发光层包括分别设置在量子阱层上和下方的Al x In y Ga 1-x-y N的量子阱层和In z Ga 1-z N的量子势垒层，0

公开(公告)号：US20140184446A1

公开(公告)日：2014-07-03

申请号：US14142618

申请日：2013-12-27

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY ,  Samsung Electronics Co., Ltd

Inventor： Jeongho Park ,  Jiyun Seol ,  Yonghoon Lee ,  Minhyun Kim ,  Sungjin Kim ,  Uitae Hwang

IPC: H01Q3/34

CPC classification number: H01Q15/14 ,  H01Q5/42 ,  H01Q25/00

Abstract: A method and apparatus configures a beamforming coefficient based on the signal strength information without collecting channel information by adjusting the phase of the antennas through random perturbation. An antenna control method of a base station in a wireless communication system using a beamforming technique includes measuring nth received signal strength at nth phase of at least one receive antenna, measuring (n+1)th received signal strength at (n+1)th phase shifted randomly from the nth phase in one of forward and backward directions, and configuring a beamforming coefficient with the phase at which the received signal strength is greatest through comparison of received signal strengths. The random perturbation-based beamforming method and apparatus of the present disclosure is capable of configuring the beamforming coefficient appropriate for the normal cellular environment using a plurality analog array antenna without channel estimation overhead.

Abstract translation: 方法和装置基于信号强度信息配置波束形成系数，而不通过随机扰动调整天线的相位来收集信道信息。 在使用波束成形技术的无线通信系统中的基站的天线控制方法包括：测量第n个接收天线的第n个相位的第n个接收信号强度，测量第（n + 1）个第（n + 1）个接收信号强度 在正向和反向之一中从第n个相位随机移位，并且通过比较接收信号强度来配置具有接收信号强度最大的相位的波束形成系数。 本公开的基于随机扰动的波束成形方法和装置能够使用多个模拟阵列天线来配置适合于正常蜂窝环境的波束成形系数，而不需要信道估计开销。

公开(公告)号：US08749071B2

公开(公告)日：2014-06-10

申请号：US13908220

申请日：2013-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Sik Park ,  Sungjin Kim ,  Seungmo Kang

IPC: H01L29/45 ,  H01L23/48

CPC classification number: H01L23/53257 ,  H01L21/7682 ,  H01L21/76858 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device may include a first interlayer dielectric layer including a plurality of contacts, a plurality of interconnection patterns disposed on the first interlayer dielectric layer and connected to the contacts, respectively, and a second interlayer dielectric layer disposed on the first interlayer dielectric layer and covering the interconnection patterns. Each of the interconnection patterns may include a first metal pattern, a second metal pattern disposed on the first metal pattern, a first barrier pattern between the contact and the first metal pattern, and a second barrier pattern between the first metal pattern and the second metal pattern. The second metal pattern may expose a portion of a top surface of the second barrier pattern, and the second interlayer dielectric layer may include an air gap between the interconnection patterns adjacent to each other.

Abstract translation: 半导体器件可以包括：第一层间介质层，包括多个触点;多个互连图案，分别设置在第一层间电介质层上并分别连接到触点;以及第二层间介质层，设置在第一层间介质层上， 涵盖互连模式。 每个互连图案可以包括第一金属图案，设置在第一金属图案上的第二金属图案，接触件和第一金属图案之间的第一阻挡图案，以及第一金属图案和第二金属图案之间的第二阻挡图案 模式。 第二金属图案可以暴露第二阻挡图案的顶表面的一部分，并且第二层间电介质层可以包括彼此相邻的互连图案之间的气隙。