公开(公告)号：US20180076042A1

公开(公告)日：2018-03-15

申请号：US15695269

申请日：2017-09-05

Applicant: Applied Materials, Inc.

Inventor： Rui CHENG ,  Ziqing DUAN ,  Milind GADRE ,  Praket P. JHA ,  Abhijit Basu MALLICK ,  Deenesh PADHI

IPC: H01L21/285 ,  H01L21/3205 ,  H01L21/02 ,  H01L21/3105 ,  C23C16/30

CPC classification number: H01L21/28525 ,  C23C16/045 ,  C23C16/24 ,  C23C16/30 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/32055

Abstract: Implementations described herein generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron-doped amorphous silicon layers on a semiconductor substrate. In one implementation, a method of forming a boron-doped amorphous silicon layer on a substrate is provided. The method comprises depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a boron-doped amorphous silicon layer on the patterned features and the exposed upper surface of the substrate and selectively removing the boron-doped amorphous silicon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the boron-doped amorphous silicon layer.

公开(公告)号：US20170004974A1

公开(公告)日：2017-01-05

申请号：US15185282

申请日：2016-06-17

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Abhijit Basu MALLICK

IPC: H01L21/3105 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/02164 ,  C23C16/02 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/033 ,  H01L21/0337 ,  H01L21/3213 ,  H01L21/76281 ,  H01L21/76283

Abstract: Embodiments described herein generally provide a method for filling features formed on a substrate. In one embodiment, a method for selectively forming a silicon oxide layer on a substrate is provided. The method includes selectively depositing a silicon oxide layer within a patterned feature formed on a surface of a substrate, wherein the patterned feature comprises one or more sidewalls and a deposition surface at a bottom of the patterned feature, the one or more sidewalls comprise a silicon oxide, a silicon nitride, or a combination thereof, the deposition surface essentially consists of silicon, and the selectively deposited silicon oxide layer is formed on the deposition surface by flowing tetraethyl orthosilicate (TEOS) and ozone over the patterned feature.

Abstract translation: 本文描述的实施例通常提供用于填充形成在基底上的特征的方法。 在一个实施例中，提供了在衬底上选择性地形成氧化硅层的方法。 该方法包括在形成在衬底的表面上的图案化特征中选择性地沉积氧化硅层，其中图案化特征包括在图案化特征的底部的一个或多个侧壁和沉积表面，所述一个或多个侧壁包括硅 氧化物，氮化硅或其组合，沉积表面基本上由硅组成，并且通过在图案化特征上流动原硅酸四乙酯（TEOS）和臭氧，在沉积表面上形成选择性沉积的氧化硅层。

公开(公告)号：US20160293483A1

公开(公告)日：2016-10-06

申请号：US15083590

申请日：2016-03-29

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Rui CHENG ,  Kelvin CHAN ,  Abhijit Basu MALLICK

IPC: H01L21/768

CPC classification number: H01L21/76846 ,  C23C16/045 ,  C23C16/16 ,  C23C16/342 ,  C23C16/46 ,  H01L21/28556 ,  H01L21/76864 ,  H01L21/76877

Abstract: Implementations of the present disclosure generally relate to methods for forming thin films in high aspect ratio feature definitions. In one implementation, a method of processing a substrate in a process chamber is provided. The method comprises flowing a boron-containing precursor comprising a ligand into an interior processing volume of a process chamber, flowing a nitrogen-containing precursor comprising the ligand into the interior processing volume and thermally decomposing the boron-containing precursor and the nitrogen-containing precursor in the interior processing volume to deposit a boron nitride layer over at least one or more sidewalls and a bottom surface of a high aspect ratio feature definition formed in and below a surface of a dielectric layer on the substrate.

Abstract translation: 本公开的实施方式一般涉及用于在高纵横比特征定义中形成薄膜的方法。 在一个实施方案中，提供了处理室中的衬底的处理方法。 该方法包括将包含配体的含硼前体流入处理室的内部处理体积，将含有配体的含氮前体流入内部处理体积并热分解含硼前体和含氮前体 在内部处理体积中，在形成在基板上的电介质层的表面中和下方的高纵横比特征定义的至少一个或多个侧壁和底表面上沉积氮化硼层。

公开(公告)号：US20160172239A1

公开(公告)日：2016-06-16

申请号：US14943913

申请日：2015-11-17

Applicant: Applied Materials, Inc.

Inventor： Deenesh PADHI ,  Yihong CHEN ,  Kelvin CHAN ,  Abhijit Basu MALLICK ,  Alexandros T. DEMOS ,  Mukund SRINIVASAN

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L23/5329 ,  C23C16/30 ,  C23C16/452 ,  C23C16/45523 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02167 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/76834 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Implementations described herein generally relate to the formation of a silicon and aluminum containing layer. Methods described herein can include positioning a substrate in a process region of a process chamber; delivering a process gas to the process region, the process gas comprising an aluminum-containing gas and a silicon-containing gas; activating a reactant gas comprising a nitrogen-containing gas, a hydrogen containing gas, or combinations thereof; delivering the reactant gas to the process gas to create a deposition gas that deposits a silicon and aluminum containing layer on the substrate; and purging the process region. The above elements can be performed one or more times to deposit an etch stop stack.

Abstract translation: 本文描述的实施方案一般涉及形成含硅和铝的层。 本文所述的方法可以包括将基底定位在处理室的处理区域中; 将工艺气体输送到所述工艺区域，所述工艺气体包括含铝气体和含硅气体; 活化包含含氮气体，含氢气体或其组合的反应气体; 将反应气体输送到工艺气体以产生在衬底上沉积含硅和铝的层的沉积气体; 并清除过程区域。 可以执行上述元件一次或多次以沉积蚀刻停止叠层。

公开(公告)号：US20160133489A1

公开(公告)日：2016-05-12

申请号：US14589990

申请日：2015-01-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Karthik JANAKIRAMAN ,  Abhijit Basu MALLICK ,  Hari K. PONNEKANTI ,  Mandyam SRIRAM ,  Alexandros T. DEMOS ,  Mukund SRINIVASAN ,  Juan Carlos ROCHA-ALVAREZ ,  Dale R. DUBOIS

IPC: H01L21/67 ,  C23C16/458 ,  H01L21/687 ,  C23C14/58 ,  C23C14/50 ,  B05C13/00 ,  C23C16/56

CPC classification number: H01L21/67207 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67213 ,  H01L21/67709 ,  H01L21/6776

Abstract: An apparatus and method for processing a substrate in a processing system containing a deposition chamber, a treatment chamber, and an isolation region, separating the deposition chamber from the treatment is described herein. The deposition chamber deposits a film on a substrate. The treatment chamber receives the substrate from the deposition chamber and alters the film deposited in the deposition chamber with a film property altering device. Processing systems and methods are provided in accordance with the above embodiment and other embodiments.

Abstract translation: 本文描述了一种用于在包含沉积室，处理室和隔离区域的处理系统中处理衬底的装置和方法，将沉积室与处理分离。 沉积室在基板上沉积膜。 处理室从沉积室接收衬底并且利用膜性质改变装置改变沉积在沉积室中的膜。 根据上述实施例和其他实施例提供处理系统和方法。

公开(公告)号：US20160049331A1

公开(公告)日：2016-02-18

申请号：US14923957

申请日：2015-10-27

Applicant: Applied Materials, Inc.

Inventor： Mehul B. NAIK ,  Abhijit Basu MALLICK ,  Kiran V. THADANI ,  Zhenjiang CUI

IPC: H01L21/768

CPC classification number: H01L21/76885 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76867 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53261 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention generally relate to methods for forming a metal structure and passivation layers. In one embodiment, metal columns are formed on a substrate. The metal columns are doped with manganese, aluminum, zirconium, or hafnium. A dielectric material is deposited over and between the metal columns and then cured to form a passivation layer on vertical surfaces of the metal columns.

Abstract translation: 本发明的实施例一般涉及用于形成金属结构和钝化层的方法。 在一个实施例中，在衬底上形成金属柱。 金属柱掺杂有锰，铝，锆或铪。 介电材料沉积在金属柱之上和之间，然后固化以在金属柱的垂直表面上形成钝化层。

公开(公告)号：US20150228463A1

公开(公告)日：2015-08-13

申请号：US14619138

申请日：2015-02-11

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Martin Jay SEAMONS ,  Abhijit Basu MALLICK ,  Bok Hoen KIM ,  Mukund SRINIVASAN

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32862 ,  C23C16/26 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32357

Abstract: Methods for cleaning a processing chamber to remove amorphous carbon containing residuals from the processing chamber are provided. The cleaning process utilizes a low frequency RF bias power during the cleaning process. In one embodiment, a method of cleaning a processing chamber includes supplying a cleaning gas mixture into a processing chamber, applying a RF bias power of about 2 MHz or lower to a substrate support assembly disposed in the processing chamber to form a plasma in the cleaning gas mixture in the processing chamber, and removing deposition residuals from the processing chamber.

Abstract translation: 提供了用于清洁处理室以从处理室去除含有残留物的无定形碳的方法。 清洁过程在清洁过程中利用低频RF偏置功率。 在一个实施例中，清洁处理室的方法包括将清洁气体混合物供应到处理室中，向设置在处理室中的基板支撑组件施加约2MHz或更低的RF偏置功率以在清洁中形成等离子体 处理室中的气体混合物，并且从处理室去除沉积残余物。

公开(公告)号：US20150214039A1

公开(公告)日：2015-07-30

申请号：US14590624

申请日：2015-01-06

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Kiran V. THADANI ,  Abhijit Basu MALLICK

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/56 ,  H01J37/32449 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/68742 ,  H01L21/68792

Abstract: Implementations described herein generally relate to methods for dielectric gap-fill. In one implementation, a method of depositing a silicon oxide layer on a substrate is provided. The method comprises introducing a cyclic organic siloxane precursor and an aliphatic organic siloxane precursor into a deposition chamber, reacting the cyclic organic siloxane precursor and the aliphatic organic siloxane precursor with atomic oxygen to form the silicon oxide layer on a substrate positioned in the deposition chamber, wherein the substrate is maintained at a temperature between about 0° C. and about 200° C. as the silicon oxide layer is formed, wherein the silicon oxide layer is initially flowable following deposition, and wherein a ratio of a flow rate of the cyclic organic siloxane precursor to a flow rate of the aliphatic organic siloxane precursor is at least 2:1 and curing the deposited silicon oxide layer.

Abstract translation: 本文描述的实现方式通常涉及电介质间隙填充的方法。 在一个实施方案中，提供了在衬底上沉积氧化硅层的方法。 该方法包括将环状有机硅氧烷前体和脂族有机硅氧烷前体引入沉积室，使环状有机硅氧烷前体与脂族有机硅氧烷前体与原子氧反应，在位于沉积室中的基底上形成氧化硅层， 其中当形成氧化硅层时，所述衬底保持在约0℃至约200℃之间的温度，其中所述氧化硅层在沉积后最初可流动，并且其中所述循环 有机硅氧烷前体与脂族有机硅氧烷前体的流速为至少2:1，并固化沉积的氧化硅层。

公开(公告)号：US20150196933A1

公开(公告)日：2015-07-16

申请号：US14574101

申请日：2014-12-17

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Kiran V. THADANI ,  Abhijit Basu MALLICK

IPC: B05D3/06 ,  B05D3/02 ,  B05D3/04

CPC classification number: H01L21/02216 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/67115

Abstract: Embodiments of the invention generally relate to methods of curing a carbon/silicon-containing low k material. The methods generally include delivering a deposition precursor to the processing region, the deposition precursor comprising a carbon/silicon-containing precursor, forming a remote plasma in the presence of an oxygen containing precursor, delivering the activated oxygen containing precursor to the deposition precursor to deposit a carbon/silicon-containing low k material on the substrate and curing the carbon/silicon-containing low k material in the presence of a carbon oxide gas.

Abstract translation: 本发明的实施方案一般涉及固化含碳/含硅低k材料的方法。 所述方法通常包括将沉积前体输送到处理区域，沉积前体包括含碳/硅的前体，在含氧前体存在下形成远程等离子体，将活化的含氧前体输送到沉积前体以沉积 在基底上的含碳/硅的低k材料，并在碳氧化物气体存在下固化碳/含硅低k材料。