BIT TAGGING METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE DEVICE

    公开(公告)号:US20190189228A1

    公开(公告)日:2019-06-20

    申请号:US15890326

    申请日:2018-02-06

    摘要: A bit tagging method, a memory control circuit unit and a memory storage device are provided. The method includes: reading first memory cells according to a first reading voltage to generate a first codeword and determining whether the first codeword is a valid codeword, and the first codeword includes X bits; if not, reading the first memory cells according to a second reading voltage to generate a second codeword and determining whether the second codeword is the valid codeword, and the second codeword includes X bits; and if the second codeword is not the valid codeword and a Yth bit in the X bits of the first codeword is different from a Yth bit in the X bits of the second codeword, recording the Yth bit in the X bits as an unreliable bit, and Y is a positive integer less than or equal to X.

    Memory management method, memory control circuit unit and memory storage device

    公开(公告)号:US10310739B2

    公开(公告)日:2019-06-04

    申请号:US15690286

    申请日:2017-08-30

    IPC分类号: G06F12/00 G06F3/06 G06F12/02

    摘要: A memory management method is provided according to an exemplary embodiment of the disclosure. The method includes: obtaining a valid data parameter based on a valid data amount of valid data stored in a plurality of physical erasing units, and obtaining a first threshold value based on the valid data parameter. The method also includes: obtaining a first determination parameter based on a number of a plurality of first physical erasing units, and the first physical erasing units are physical erasing units being programmed for storing data by using a single-page programming mode. The method further includes: performing a garbage collection operation if the first determination parameter is greater than the first threshold value.

    Sampling module including delay locked loop, sampling unit, memory control unit, and data sampling method thereof

    公开(公告)号:US10297297B2

    公开(公告)日:2019-05-21

    申请号:US14578471

    申请日:2014-12-21

    摘要: A sampling circuit module, a memory control circuit unit, and a data sampling method, where the sampling circuit module includes a delay lock loop (DLL) and a sampling circuit. The DLL includes a clock control circuit, a clock delay circuit and a voltage control circuit. The clock control circuit performs a delay lock for a reference clock signal, so as to output a selecting signal. The clock delay circuit delays the reference clock signal according to the selecting signal, so as to output a delay clock signal. The voltage control circuit adjusts a driving voltage outputted to the clock control circuit and the clock delay circuit according to the selecting signal. The sampling circuit samples a data signal according to the delay clock signal. Accordingly, a delay ability of the DLL may be improved by adjusting the driving voltage.

    Data writing method, memory control circuit unit and memory storage apparatus

    公开(公告)号:US10235094B2

    公开(公告)日:2019-03-19

    申请号:US15060622

    申请日:2016-03-04

    发明人: Bo-Cheng Ko

    IPC分类号: G06F12/00 G06F3/06

    摘要: A data writing method, a memory control circuit unit, and a memory storage apparatus are provided. The method includes recording a flush command counting (FCC) value, and updating the FCC value whenever receiving a flush command from a host system. The method further includes getting a first physical erasing unit as an active physical unit and determining whether the FCC value is greater than a FCC value threshold. The method further includes setting a writing mode of the active physical unit as a first writing mode if the FCC value is greater than the FCC value threshold, and setting the writing mode of the active physical unit as a second writing mode if the FCC value is not greater than the FCC value threshold.

    DATA STORAGE METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT

    公开(公告)号:US20190065097A1

    公开(公告)日:2019-02-28

    申请号:US15798370

    申请日:2017-10-30

    IPC分类号: G06F3/06

    摘要: A data storage method is provided according to an exemplary embodiment of the disclosure. The method is configured for a rewritable non-volatile memory module. The method includes: performing a data merge operation; adjusting a data receiving amount per unit time for receiving to-be-written data from a host system according to a data storage state of the rewritable non-volatile memory module; storing the received to-be-written data into a buffer memory during the data merge operation being performed; and storing the data stored in the buffer memory into the rewritable non-volatile memory module.

    Data writing method, memory control circuit unit and memory storage apparatus for writing data from buffer memory and moving valid data

    公开(公告)号:US10203886B2

    公开(公告)日:2019-02-12

    申请号:US15080557

    申请日:2016-03-24

    发明人: Jia-Yan Huang

    IPC分类号: G06F12/00 G06F3/06

    摘要: A data writing method, a memory control circuit unit and a memory storage apparatus are provided. The method includes: determining whether receiving a predetermined command from a host system. The method also includes: if receiving the predetermined command from the host system, writing at least one buffer data from a buffer memory into a first physical erasing unit, selecting at least one second physical erasing unit from the physical erasing units, and writing at least one valid data of the at least one second physical erasing unit into the first physical erasing unit in response to the predetermined command.

    DATA STORAGE METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE DEVICE

    公开(公告)号:US20190034329A1

    公开(公告)日:2019-01-31

    申请号:US15706765

    申请日:2017-09-18

    发明人: Chih-Kang Yeh

    IPC分类号: G06F12/02 G06F3/06

    摘要: An exemplary embodiment of the disclosure provides a data storage method for a rewritable non-volatile memory module. The method includes: receiving first data; mapping a logical unit of the first data to a first physical unit of a first management unit and not storing the first data to the rewritable non-volatile memory module if a data content of the first data is identical to a data content of second data, and the second data is stored in the first physical unit; and storing logical-to-physical bit map information to a second physical unit in the first management unit, and the logical-to-physical bit map information corresponds to at least one logical-to-physical mapping table and is configured for identifying valid data in the first management unit.

    MEMORY MANAGEMENT METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE DEVICE

    公开(公告)号:US20190012080A1

    公开(公告)日:2019-01-10

    申请号:US15690286

    申请日:2017-08-30

    IPC分类号: G06F3/06 G06F12/02

    摘要: A memory management method is provided according to an exemplary embodiment of the disclosure. The method includes: obtaining a valid data parameter based on a valid data amount of valid data stored in a plurality of physical erasing units, and obtaining a first threshold value based on the valid data parameter. The method also includes: obtaining a first determination parameter based on a number of a plurality of first physical erasing units, and the first physical erasing units are physical erasing units being programmed for storing data by using a single-page programming mode. The method further includes: performing a garbage collection operation if the first determination parameter is greater than the first threshold value.