公开(公告)号：US12088709B2

公开(公告)日：2024-09-10

申请号：US17549651

申请日：2021-12-13

申请人： Kioxia Corporation

发明人： Yoshihiro Ohba

IPC分类号： H04L29/06 ,  H03M13/15 ,  H04L9/08 ,  H04L67/1097

CPC分类号： H04L9/0869 ,  H03M13/1515 ,  H04L9/0825 ,  H04L67/1097

摘要： An information processing apparatus or method that can share secret information by plural holders. The apparatus or method execute a control to: calculate or generate an encryption key and k key symbols from k random numbers; encrypt k information symbols using the encryption key to output k encrypted symbols; output any one of the k encrypted symbols and the k key symbols as k message symbols; output a flag indicating which one of the k encrypted symbols and the k key symbols are the k message symbols; encode the k message symbols with a maximum distance separable code to output n code symbols; and-output n code blocks from the n code symbols and the flag, wherein k is a positive integer of one or more, and n is a positive integer larger than k.

公开(公告)号：US20240298444A1

公开(公告)日：2024-09-05

申请号：US18583892

申请日：2024-02-22

申请人： Kioxia Corporation

发明人： Mitsuhiko NODA ,  Saori KASHIWADA

IPC分类号： H10B43/27 ,  H01L21/683 ,  H01L23/00 ,  H10B41/27 ,  H10B41/35 ,  H10B43/35

CPC分类号： H10B43/27 ,  H01L21/6835 ,  H01L24/08 ,  H01L24/80 ,  H10B41/27 ,  H10B41/35 ,  H10B43/35 ,  H01L2221/68386 ,  H01L2224/08145 ,  H01L2224/80224 ,  H01L2924/1438

摘要： According to one embodiment, a method of manufacturing a semiconductor device includes: forming a laser peeling film above a first semiconductor substrate; forming, inside the laser peeling film, a thermal diffusion layer including a member has a coefficient of thermal conductivity higher than that of the laser peeling film is distributed in a plane parallel to a front surface of the first semiconductor substrate; forming a circuit layer including a semiconductor circuit above the laser peeling film; bonding the first and a second semiconductor substrates; applying a laser beam to a back surface of the first semiconductor substrate; and peeling the first semiconductor substrate to maintain the circuit layer on a side of the second semiconductor substrate.

公开(公告)号：US20240297078A1

公开(公告)日：2024-09-05

申请号：US18586425

申请日：2024-02-24

申请人： Kioxia Corporation

发明人： Mariko SUMIYA ,  Takuro OKUBO

IPC分类号： H01L21/78 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/683 ,  H01L21/762 ,  H01L23/00 ,  H10B80/00

CPC分类号： H01L21/7813 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02614 ,  H01L21/32055 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/6835 ,  H01L21/76259 ,  H10B80/00 ,  H01L24/80 ,  H01L2221/68386 ,  H01L2224/80006 ,  H01L2924/1431

摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming a first insulator or a first conductor layer on a first substrate, forming a porous layer on the first insulator or the first conductor layer, forming a first film including a first device, above the porous layer, and forming a second film including a second device, on a second substrate. The method further includes bonding the first substrate and the second substrate to sandwich the first insulator or the first conductor layer, the porous layer, the first film, and the second film. The method further includes separating the first substrate and the second substrate such that the first insulator or the first conductor layer and a first portion of the porous layer remain above the first substrate, and a second portion of the porous layer remains above the second substrate.

公开(公告)号：US20240295991A1

公开(公告)日：2024-09-05

申请号：US18645482

申请日：2024-04-25

申请人： KIOXIA CORPORATION

发明人： Shinichi KANNO

IPC分类号： G06F3/06

CPC分类号： G06F3/0659 ,  G06F3/0604 ,  G06F3/064 ,  G06F3/0656 ,  G06F3/0679

摘要： According to one embodiment, a memory system checks a first total size indicative of a sum of data lengths specified by first write commands stored in a first submission queue of a host corresponding to a first stream. When the first total size is greater than or equal to a minimum write size, the memory system fetches a set of first write commands stored in the first submission queue, transfers first write data associated with the set of first write commands from a memory of the host to the memory system, and writes the first write data into a first write destination block allocated for the first stream.

公开(公告)号：US12080374B2

公开(公告)日：2024-09-03

申请号：US17898888

申请日：2022-08-30

申请人： KIOXIA CORPORATION

发明人： Masaki Fujiu ,  Hitoshi Shiga

IPC分类号： G11C7/06 ,  G11C7/12 ,  G11C7/22

CPC分类号： G11C7/065 ,  G11C7/12 ,  G11C7/222

摘要： A semiconductor storage device includes a memory string, a sense amplifier connected to the memory string, first, second, third, and fourth latch circuits that are each connected to the sense amplifier, a first wiring connected to the sense amplifier, the first latch circuit and the second latch circuit, a second wiring connected to the third latch circuit, a third wiring connected to the fourth latch circuit, a first switch transistor between the first wiring and the third wiring, a second switch transistor between the first wiring and the second wiring, and a third switch transistor between the second wiring and the third wiring.

公开(公告)号：US12079060B2

公开(公告)日：2024-09-03

申请号：US17991718

申请日：2022-11-21

申请人： KIOXIA CORPORATION

发明人： Akihiro Kimura ,  Hiroki Matsushita

IPC分类号： G06F3/06 ,  G06F1/3234 ,  G06F11/14 ,  G06F12/02 ,  G11C5/14

CPC分类号： G06F1/3275 ,  G06F3/0619 ,  G06F11/1456 ,  G06F11/1458 ,  G06F12/0246 ,  G11C5/141 ,  G06F2212/1032 ,  G06F2212/7203 ,  Y02D10/00

摘要： According to one embodiment, the memory system includes a nonvolatile semiconductor memory, a data buffer, a volatile memory for storing a management table uniquely associates the user data with an address of the physical storage region of nonvolatile semiconductor memory, a controller that carries out a force quit process for writing the user data stored in a data buffer, the management table stored in volatile memory into the nonvolatile semiconductor memory, and a storage battery. The controller starts the force quit process prior to the power supply of the internal power supply regulator is switched from an external power supply to the storage battery.

公开(公告)号：US12078922B2

公开(公告)日：2024-09-03

申请号：US17472387

申请日：2021-09-10

申请人： Kioxia Corporation

发明人： Takashi Sato ,  Takeshi Suto ,  Satoshi Mitsugi

IPC分类号： G03F1/42 ,  G01B11/27 ,  G03F7/00 ,  G03F9/00 ,  H01L23/544

CPC分类号： G03F1/42 ,  G01B11/27 ,  G03F7/0002 ,  G03F9/7042 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/54466

摘要： A template of one embodiment includes an alignment mark. The alignment mark includes a first main pattern and a first auxiliary pattern. In the first main pattern, a first part and a second part are disposed according to a predetermined repeating pattern. The first auxiliary pattern is configured as a pattern opposite to the repeating pattern in a region outside an end of the first main pattern.

公开(公告)号：US20240292620A1

公开(公告)日：2024-08-29

申请号：US18586787

申请日：2024-02-26

申请人： Kioxia Corporation

发明人： Takahiro KOTOU

IPC分类号： H10B43/27

CPC分类号： H10B43/27

摘要： A semiconductor memory device is provided with a stacked body in which a plurality of conductive layers and a plurality of insulating layers are alternately stacked by one layer, a first separation layer that penetrates an uppermost conductive layer of the stacked body and at least one conductive layer continuous with the uppermost conductive layer in the stacking direction among the plurality of conductive layers, extends in the stacked body in a first direction intersecting the stacking direction, and selectively separates one or more conductive layers including the uppermost conductive layer in a second direction that intersects with the stacking direction and the first direction, a first contact that extends from an upper side of the stacked body and is connected to any one of the one or more conductive layers, and a second contact that extends from the upper side of the stacked body, is connected to any one of the plurality of conductive layers lower than the one or more conductive layers, and has a diameter, which is larger than that of an upper surface of the first contact, on an upper surface.

公开(公告)号：US20240292619A1

公开(公告)日：2024-08-29

申请号：US18586775

申请日：2024-02-26

申请人： Kioxia Corporation

发明人： Yasuaki NAKATA ,  Masayoshi TAGAMI ,  Koichi SAKATA ,  Miki TOSHIMA

IPC分类号： H10B43/27 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18 ,  H10B80/00

CPC分类号： H10B43/27 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H10B80/00 ,  H01L2224/08145 ,  H01L2224/80006 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/14511

摘要： A semiconductor storage device includes transistors disposed on a substrate; a first metal wiring layer disposed over the transistors at a first position, the first metal wiring layer including a first metal wiring; a stacked body, disposed above the first metal wiring layer, including a first conductive layers and first insulating layers alternately stacked; a pillar including a semiconductor layer that includes a first type impurity in an upper end and penetrates through the stacked body; and a second conductive layer disposed at a second position further from the substrate than the first position, overlapped with the first metal wiring or another metal wiring in the first metal wiring layer, and not electrically connected to any of the transistors, the first conductive layers, or the first metal wiring layer. The second conductive layer has a higher melting point than the first metal wiring.

公开(公告)号：US20240290666A1

公开(公告)日：2024-08-29

申请号：US18588275

申请日：2024-02-27

申请人： Kioxia Corporation

发明人： Makoto MORIYAMA ,  Tsubasa IMAMURA ,  Takaki HASHIMOTO ,  Ai FURUBAYASHI

IPC分类号： H01L21/66 ,  G01B11/06 ,  G01K11/00 ,  H01L21/311

CPC分类号： H01L22/26 ,  G01B11/06 ,  G01K11/00 ,  H01L21/31116 ,  H01L21/31144

摘要： According to one embodiment, a method for manufacturing a semiconductor device includes: preparing a substrate, the substrate including: a workpiece film; and a mask pattern formed on the workpiece film, the mask pattern including a light shielding layer that shields light; and etching the workpiece film exposed from the mask pattern, in which the etching of the workpiece film includes: irradiating a back surface of the substrate with light before the etching; observing first interference light generated by interference between first reflected light reflected by the back surface of the substrate and second reflected light transmitted through the substrate and reflected by a bottom surface of the workpiece film; observing second interference light generated by interference between the first reflected light and third reflected light transmitted through the substrate and the workpiece film and reflected without being transmitted through an upper surface of the workpiece film; calculating a thickness of the workpiece film based on the first interference light and the second interference light; and performing the etching under an etching condition based on the thickness of the workpiece film calculated from the first interference light and the second interference light.