公开(公告)号：US20240292619A1

公开(公告)日：2024-08-29

申请号：US18586775

申请日：2024-02-26

申请人： Kioxia Corporation

发明人： Yasuaki NAKATA ,  Masayoshi TAGAMI ,  Koichi SAKATA ,  Miki TOSHIMA

IPC分类号： H10B43/27 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18 ,  H10B80/00

CPC分类号： H10B43/27 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H10B80/00 ,  H01L2224/08145 ,  H01L2224/80006 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/14511

摘要： A semiconductor storage device includes transistors disposed on a substrate; a first metal wiring layer disposed over the transistors at a first position, the first metal wiring layer including a first metal wiring; a stacked body, disposed above the first metal wiring layer, including a first conductive layers and first insulating layers alternately stacked; a pillar including a semiconductor layer that includes a first type impurity in an upper end and penetrates through the stacked body; and a second conductive layer disposed at a second position further from the substrate than the first position, overlapped with the first metal wiring or another metal wiring in the first metal wiring layer, and not electrically connected to any of the transistors, the first conductive layers, or the first metal wiring layer. The second conductive layer has a higher melting point than the first metal wiring.