公开(公告)号：US20240321570A1

公开(公告)日：2024-09-26

申请号：US18433787

申请日：2024-02-06

申请人： Kioxia Corporation

发明人： Ayata HARAYAMA ,  Tsubasa IMAMURA

IPC分类号： H01L21/02 ,  H01L21/311

CPC分类号： H01L21/02211 ,  H01L21/31116

摘要： According to one embodiment, an etching method includes forming a first film on the inner wall surface of the recess by supplying a precursor including silicon to the recess. The etching method includes oxidizing an upper region of the first film on the inner wall surface by an oxidation process, thereby forming an oxidized portion in the upper region. The etching method includes silylating the oxidized portion by supplying a silylating agent to the recess and etching the recess after supplying the silylating agent to increase the depth of the recess.

公开(公告)号：US20230114349A1

公开(公告)日：2023-04-13

申请号：US18080838

申请日：2022-12-14

申请人： Kioxia Corporation

发明人： Chihiro ABE ,  Toshiyuki SASAKI ,  Hisataka HAYASHI ,  Mitsuhiro OMURA ,  Tsubasa IMAMURA

IPC分类号： H01L21/311 ,  H01L21/67 ,  H01L21/02 ,  H01J37/32

摘要： An etching method according to one embodiment, includes alternately switching a first step and a second step. The first step introduces a first gas containing a fluorine atom without supplying radiofrequency voltage to form a surface layer on a surface of a target cooled at a temperature equal to or lower than a liquefaction temperature of the first gas. The second step introduces a second gas gaseous at the first temperature and different from the first gas, and supplies the radiofrequency voltage, to generate plasma from the second gas to etch the target by sputtering using the plasma.

公开(公告)号：US20220077183A1

公开(公告)日：2022-03-10

申请号：US17197305

申请日：2021-03-10

申请人： Kioxia Corporation

发明人： Takaumi MORITA ,  Hisashi OKUCHI ,  Keiichi SAWA ,  Hiroyuki YAMASHITA ,  Toshiaki YANASE ,  Tsubasa IMAMURA

IPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11565

摘要： In one embodiment, a semiconductor device includes a substrate, and a plurality of electrode layers provided separately from each other in a first direction perpendicular to a surface of the substrate. The device further includes a first insulator, a charge storage layer, a second insulator, a first semiconductor region including silicon, and a second semiconductor region including silicon and carbon, which are provided in order on side faces of the electrode layers, wherein an interface between the first semiconductor region and the second insulator includes fluorine.

公开(公告)号：US20220399222A1

公开(公告)日：2022-12-15

申请号：US17694145

申请日：2022-03-14

申请人： Kioxia Corporation

发明人： Wu LI ,  Tsubasa IMAMURA ,  Yuto ITAGAKI ,  Minki CHOU

IPC分类号： H01L21/683 ,  H01L21/3065 ,  H01L21/311 ,  H01J37/32

摘要： A semiconductor device manufacturing apparatus according to an embodiment includes: a chamber; a holder provided in the chamber and capable of adsorbing a substrate, the holder including a recess on a surface, a first hole provided in the recess, and a second hole provided in the recess; a first gas passage connected to the first hole; a second gas passage connected to the second hole; a first valve provided in the first gas passage; a second valve provided in the second gas passage; a first gas supply pipe for supplying a first gas to the recess; and a gas discharge pipe for discharging a gas from the recess. The first gas passage and the second gas passage are connected to the first gas supply pipe, or the first gas passage and the second gas passage are connected to the gas discharge pipe.

公开(公告)号：US20240290666A1

公开(公告)日：2024-08-29

申请号：US18588275

申请日：2024-02-27

申请人： Kioxia Corporation

发明人： Makoto MORIYAMA ,  Tsubasa IMAMURA ,  Takaki HASHIMOTO ,  Ai FURUBAYASHI

IPC分类号： H01L21/66 ,  G01B11/06 ,  G01K11/00 ,  H01L21/311

CPC分类号： H01L22/26 ,  G01B11/06 ,  G01K11/00 ,  H01L21/31116 ,  H01L21/31144

摘要： According to one embodiment, a method for manufacturing a semiconductor device includes: preparing a substrate, the substrate including: a workpiece film; and a mask pattern formed on the workpiece film, the mask pattern including a light shielding layer that shields light; and etching the workpiece film exposed from the mask pattern, in which the etching of the workpiece film includes: irradiating a back surface of the substrate with light before the etching; observing first interference light generated by interference between first reflected light reflected by the back surface of the substrate and second reflected light transmitted through the substrate and reflected by a bottom surface of the workpiece film; observing second interference light generated by interference between the first reflected light and third reflected light transmitted through the substrate and the workpiece film and reflected without being transmitted through an upper surface of the workpiece film; calculating a thickness of the workpiece film based on the first interference light and the second interference light; and performing the etching under an etching condition based on the thickness of the workpiece film calculated from the first interference light and the second interference light.

公开(公告)号：US20230307520A1

公开(公告)日：2023-09-28

申请号：US17898224

申请日：2022-08-29

申请人： KIOXIA CORPORATION

发明人： Takuya KIKUCHI ,  Yuya NAGATA ,  Masaya TODA ,  Kappei IMAMURA ,  Tsubasa IMAMURA

IPC分类号： H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L29/42384 ,  H01L29/66969 ,  H01L29/7869 ,  H01L27/1225

摘要： According to one embodiment, a method for manufacturing a semiconductor device includes forming an electrode layer on a film containing indium and etching portions of the electrode layer left exposed by a mask layer until at least a portion of the film is exposed. A spacer film is formed to cover an upper surface of the electrode layer, side surfaces of the electrode layer, and an exposed upper surface of the film. The spacer film on the upper surface of the electrode layer and the exposed upper surface of the film is removed while leaving the spacer film on the side surfaces of the electrode layer. The exposed upper surface of the film is exposed to a reductive gas plasma to reduce portions of the film. These reduced portions of the film are then etched with a chemical solution.

公开(公告)号：US20230274942A1

公开(公告)日：2023-08-31

申请号：US17902751

申请日：2022-09-02

申请人： KIOXIA CORPORATION

发明人： Hiroshi NAMBU ,  Junichi HASHIMOTO ,  Tsubasa IMAMURA

IPC分类号： H01L21/311

CPC分类号： H01L21/31116

摘要： According to one embodiment, a method for manufacturing a semiconductor device includes placing a substrate having a to-be-processed layer on a stage within an etching chamber and supplying an etching gas into the etching chamber while keeping the stage at a first temperature to perform an etching treatment to etch the to-be-processed layer on the substrate by using a reactive ion etching method. After the etching treatment, and without exposing the substrate to the atmosphere, supplying an inert gas into the etching chamber while keeping the stage at a second temperature, which is higher than the first temperature, to perform a high-temperature treatment to heat the to-be-processed layer.

公开(公告)号：US20220406611A1

公开(公告)日：2022-12-22

申请号：US17643543

申请日：2021-12-09

申请人： Kioxia Corporation

发明人： Atsushi TAKAHASHI ,  Tsubasa IMAMURA ,  Wu LI ,  Yuto ITAGAKI ,  Minki CHOU

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/02

摘要： A method for manufacturing a semiconductor device according to an embodiment is a method for manufacturing a semiconductor device including performing a first etching process of forming a recess in a layer to be processed formed on a substrate by reactive ion etching using a first gas, performing a first process of supplying hydrogen radicals to the recess by using a second gas containing hydrogen in a state where a temperature of the substrate is equal to or more than 200° C. and equal to or less than 350° C. after the first etching process, and performing a second etching process of etching a bottom surface of the recess by reactive ion etching using a third gas after the first process.

公开(公告)号：US20210090893A1

公开(公告)日：2021-03-25

申请号：US16801879

申请日：2020-02-26

申请人： KIOXIA CORPORATION

发明人： Tsubasa IMAMURA

IPC分类号： H01L21/308 ,  H01L21/033

摘要： According to one embodiment, a pattern forming method includes forming an organic layer on a first layer. The organic layer has a first region having a first thickness and a first width, a second region having a second thickness and a second width, and a third region located between the first region and the second region. The third region has a third thickness less than each of the first thickness and the second thickness and a third width. A second layer containing silicon oxide is then formed on a surface of the organic layer in a process chamber of a reactive ion etching device. The third region is then etched in the process chamber using the second layer as a mask.