公开(公告)号：US20240321570A1

公开(公告)日：2024-09-26

申请号：US18433787

申请日：2024-02-06

申请人： Kioxia Corporation

发明人： Ayata HARAYAMA ,  Tsubasa IMAMURA

IPC分类号： H01L21/02 ,  H01L21/311

CPC分类号： H01L21/02211 ,  H01L21/31116

摘要： According to one embodiment, an etching method includes forming a first film on the inner wall surface of the recess by supplying a precursor including silicon to the recess. The etching method includes oxidizing an upper region of the first film on the inner wall surface by an oxidation process, thereby forming an oxidized portion in the upper region. The etching method includes silylating the oxidized portion by supplying a silylating agent to the recess and etching the recess after supplying the silylating agent to increase the depth of the recess.

公开(公告)号：US20220238345A1

公开(公告)日：2022-07-28

申请号：US17471684

申请日：2021-09-10

申请人： Kioxia Corporation

发明人： Atsushi TAKAHASHI ,  Ayata HARAYAMA ,  Yuya NAGATA

IPC分类号： H01L21/3065 ,  H01J37/305 ,  H01L21/306

摘要： A manufacturing method for a semiconductor device according to an embodiment includes performing first etching for forming a recess in a layer to be processed using a reactive ion etching method, performing a first treatment of supplying a silylation agent to the recess after the first etching, and performing second etching of etching at least a bottom surface of the recess using a reactive ion etching method after the first treatment.