公开(公告)号：US20230092237A1

公开(公告)日：2023-03-23

申请号：US17546772

申请日：2021-12-09

申请人： KIOXIA Corporation

发明人： Masanori MIZUKOSHI ,  Hisashi OKUCHI

IPC分类号： H01L27/24 ,  H01L23/48 ,  H01L45/00

摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming a first layer including a metal element on a substrate, and processing the first layer by dry etching. The method further includes removing a second layer formed on a lateral face of the first layer by wet etching, after processing the first layer, and forming a first film on the lateral face of the first layer by processing the lateral face of the first layer with a liquid, after removing the second layer. Furthermore, the substrate is not exposed to ambient air, after removing the second layer and before forming the first film.

公开(公告)号：US20220077183A1

公开(公告)日：2022-03-10

申请号：US17197305

申请日：2021-03-10

申请人： Kioxia Corporation

发明人： Takaumi MORITA ,  Hisashi OKUCHI ,  Keiichi SAWA ,  Hiroyuki YAMASHITA ,  Toshiaki YANASE ,  Tsubasa IMAMURA

IPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11565

摘要： In one embodiment, a semiconductor device includes a substrate, and a plurality of electrode layers provided separately from each other in a first direction perpendicular to a surface of the substrate. The device further includes a first insulator, a charge storage layer, a second insulator, a first semiconductor region including silicon, and a second semiconductor region including silicon and carbon, which are provided in order on side faces of the electrode layers, wherein an interface between the first semiconductor region and the second insulator includes fluorine.

公开(公告)号：US20240318344A1

公开(公告)日：2024-09-26

申请号：US18736869

申请日：2024-06-07

申请人： Kioxia Corporation

发明人： Ryosuke NIWA ,  Hisashi OKUCHI

IPC分类号： C25D11/02

CPC分类号： C25D11/022

摘要： According to one embodiment, a anodization apparatus includes: a first process tank used for an anodization process on a first portion of a substrate; a second process tank provided inside of the first process tank and used for the anodization process on a second portion of the substrate; a first electrolyte supply unit configured to supply a first electrolyte to the first process tank; a second electrolyte supply unit configured to supply a second electrolyte to the second process tank; a retainer configured to retain the substrate; a first electrode provided above the first process tank and/or the second process tank; and a second electrode provided below the first process tank and the second process tank.

公开(公告)号：US20220280969A1

公开(公告)日：2022-09-08

申请号：US17404898

申请日：2021-08-17

申请人： Kioxia Corporation

发明人： Yurika KANNO ,  Hisashi OKUCHI ,  Yohei YAMAMOTO

IPC分类号： B05C9/10 ,  B05C11/10

摘要： In one embodiment, a substrate treatment apparatus includes a mixer configured to mix a first liquid including a metal element and a second liquid being basicity to generate a third liquid including the metal element and being basicity. The apparatus further includes a supplier configured to supply the third liquid to a substrate. The apparatus further includes a first flow path configured to convey the third liquid from the mixer to the supplier not through a filter that removes particles from the third liquid.