公开(公告)号：US20230015871A1

公开(公告)日：2023-01-19

申请号：US17780877

申请日：2021-05-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jie Huang ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jiayu He ,  Nianqi Yao ,  Feng Qu ,  Xiaochun Xu

IPC: H01L29/786 ,  H01L27/12

Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and an electronic device arc provided. The thin film transistor includes an active layer including multiple oxide layers which includes a channel layer, a transition layer and a first barrier layer, the channel layer is an layer with a highest carrier mobility, the channel layer is a crystalline or amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer, the first barrier layer and the transition layer are both crystalline oxide layers; a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are larger than a band gap of the channel layer.

公开(公告)号：US11289513B2

公开(公告)日：2022-03-29

申请号：US16074282

申请日：2018-01-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ke Wang ,  Hehe Hu ,  Xinhong Lu

IPC: H01L27/12

Abstract: A thin film transistor and a method for fabricating the same, an array substrate and a display device are provided. The thin film transistor includes an active layer and a protective layer being provided on and in direct contact with the active layer, the protective layer is provided corresponding to a channel region of the thin film transistor; the protective layer is made of an oxygen-enriched metallic oxide insulation material which will not introduce any new element into the active layer. In the thin film transistor and the method for fabricating the same, the array substrate and the display device provided by the present disclosure, the active layer can be protected from being damaged by the etchant for forming the source/drain, and no new element will be introduced into the active layer; thus the characteristics and the stability of the thin film transistor is improved.

公开(公告)号：US11219894B2

公开(公告)日：2022-01-11

申请号：US16647386

申请日：2019-09-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaochen Ma ,  Guangcai Yuan ,  Ce Ning ,  Xin Gu ,  Hehe Hu

IPC: B01L3/00 ,  B01L9/00 ,  G01N21/05 ,  G01N21/63

Abstract: A microfluidic channel structure and a fabrication method thereof, a microfluidic detecting device and a detecting method thereof are disclosed. The microfluidic channel structure includes a support portion; a foundation portion, provided on the support portion and including a first foundation and a second foundation spaced apart from each other; and a channel defining portion, provided on a side of the foundation portion that is away from the support portion and including a first channel layer and a second channel layer, the first channel layer covering the first foundation and the second channel layer covering the second foundation have a gap therebetween to define a microfluidic channel; and the first channel layer and the second channel layer are made of a same material.

公开(公告)号：US11133363B2

公开(公告)日：2021-09-28

申请号：US16556342

申请日：2019-08-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Ke Wang ,  Xinhong Lu ,  Hehe Hu ,  Wei Yang ,  Ce Ning

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423

Abstract: The present discloses an array substrate and a manufacturing method thereof, and a display device. The array substrate includes a first transistor and a second transistor. The first transistor includes a first active layer, a first gate, a first source and a first drain. The second transistor includes a second active layer, a second gate, a second source and a second drain. An orthographic projection of the second source on the base substrate and an orthographic projection of the second drain on the base substrate at least partially overlap. One of the second source and the second drain is in the same layer as and made from the same material as the first gate. The first source and the first drain are in the same layer as and made from the same material as the other of the second source and the second drain.

公开(公告)号：US11092866B2

公开(公告)日：2021-08-17

申请号：US16631331

申请日：2019-07-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hehe Hu ,  Xiaochen Ma ,  Guangcai Yuan ,  Ce Ning ,  Xin Gu

IPC: G02F1/1368 ,  G02F1/1362

Abstract: The present disclosure provides a display panel and a manufacturing method thereof, a driving method and a display device. The display panel includes: a base substrate and a thin film transistor on a surface of the base substrate. The thin film transistor includes: a gate, and a source and a drain arranged along a first direction, and a first passivation layer covering the gate, the source and the drain. a space region in which liquid crystal molecules are filled is formed in the first passivation layer. The space region is between the source and the drain. The source and the drain are configured to control rotation of the liquid crystal molecules.

公开(公告)号：US20210220824A1

公开(公告)日：2021-07-22

申请号：US16755911

申请日：2019-04-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ce Ning ,  Xiaochen Ma ,  Hehe Hu ,  Guangcai Yuan ,  Xin Gu

IPC: B01L3/00

Abstract: The present disclosure relates to a micro-channel device. The micro-channel device may include a micro-channel structure and a semiconductor junction. The micro-channel structure may include a base layer, a plurality of rails distributed on the base layer at intervals, and a cover layer comprising a plurality of columns. The cover layer and the base layer are configured to form a plurality of micro-channels. The semiconductor junction may include a P-type semiconductor layer, an intrinsic semiconductor layer and a N-type semiconductor layer stacked in a first direction.

公开(公告)号：US20210217784A1

公开(公告)日：2021-07-15

申请号：US16761335

申请日：2019-11-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhengliang Li ,  Jiayu He ,  Hehe Hu ,  Wenlin Zhang ,  Song Liu ,  Xiaochen Ma ,  Nianqi Yao ,  Jie Huang

IPC: H01L27/144

Abstract: An array substrate, a method for manufacturing an array substrate, and a display panel are provided. The array substrate includes: a base substrate; a thin film transistor on the base substrate; and a PIN diode on a side of the thin film transistor away from the base substrate, in a direction running away the base substrate from the thin film transistor, the PIN diode including a first electrical conduction type semiconductor layer and an intrinsic semiconductor layer and a second electrical conduction type semiconductor layer stacked in sequence, wherein a material from which the first electrical conduction type semiconductor layer is made includes one or more of following materials: metal oxide, metal sulfide, metal selenide, metal nitride, metal phosphide, or metal arsenide.

公开(公告)号：US10651212B2

公开(公告)日：2020-05-12

申请号：US16388349

申请日：2019-04-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hehe Hu

IPC: H01L27/32 ,  H01L27/12 ,  H01L21/82 ,  H01L27/02 ,  H01L21/027 ,  H01L21/3213 ,  H01L29/423

Abstract: A thin film transistor array substrate, a method for manufacturing the same and a display device are provided. The TFT array substrate includes: a substrate, and a gate electrode, a common electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode arranged on the substrate. The TFT array substrate further includes: a pixel electrode, arranged on the gate insulation layer, overlapped with and jointed to the drain electrode; a passivation layer, arranged on the gate insulation layer and a channel between the source and drain electrodes; and a common electrode line, arranged on a plane identical to the pixel electrode.

公开(公告)号：US20190267559A1

公开(公告)日：2019-08-29

申请号：US16115009

申请日：2018-08-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Song Liu ,  Yu Wen ,  Jianming Sun ,  Zhengliang Li ,  Xiaochen Ma ,  Hehe Hu ,  Wenlin Zhang ,  Jianhua Du ,  Ce Ning

IPC: H01L51/42 ,  H01L51/44

Abstract: The present disclosure relates to the field of display, in particular to a thin film transistor, a method for preparing the same, and a display device. The thin film transistor of the present disclosure includes a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, and a photoelectric conversion layer in contact with the gate electrode. The photoelectric conversion layer is configured to generate an induced potential in a light environment.

公开(公告)号：US10108291B2

公开(公告)日：2018-10-23

申请号：US15031257

申请日：2015-08-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD

Inventor： Hehe Hu

IPC: H01L27/00 ,  H01L29/00 ,  G06F3/041 ,  H01L29/66 ,  H01L29/786 ,  G06F3/042 ,  H01L27/12 ,  H01L29/22 ,  H01L29/24 ,  H01L29/16

Abstract: A thin-film transistor is provided. The thin film transistor includes a substrate; an active layer configured as a channel of the thin-film transistor, wherein the active layer is a mixture of oxide semiconductor and graphene; and a source and a drain.