公开(公告)号：US20210025056A1

公开(公告)日：2021-01-28

申请号：US16639449

申请日：2018-10-08

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Zheng John YE ,  Kwangduk Douglas LEE ,  Dong Hyung LEE ,  Vinay PRABHAKAR ,  Juan Carlos ROCHA-ALVAREZ ,  Xiaoquan MIN

IPC: C23C16/458 ,  H01J37/32 ,  C23C16/50

Abstract: Embodiments of the disclosure relate to an improved electrostatic chuck for use in a processing chamber to fabricate semiconductor devices. In one embodiment, a processing chamber includes a chamber body having a processing volume defined therein and an electrostatic chuck disposed within the processing volume. The electrostatic chuck includes a support surface with a plurality of mesas located thereon, one or more electrodes disposed within the electrostatic chuck, and a seasoning layer deposited on the support surface over the plurality of mesas. The support surface is made from an aluminum containing material. The one or more electrodes are configured to form electrostatic charges to electrostatically secure a substrate to the support surface. The seasoning layer is configured to provide cushioning support to the substrate when the substrate is electrostatically secured to the support surface.

公开(公告)号：US20170162417A1

公开(公告)日：2017-06-08

申请号：US15370682

申请日：2016-12-06

Applicant: Applied Materials, Inc.

Inventor： Zheng John YE ,  Hiroji HANAWA ,  Juan Carlos ROCHA-ALVAREZ ,  Pramit MANNA ,  Michael Wenyoung TSIANG ,  Allen KO ,  Wenjiao WANG ,  Yongjing LIN ,  Prashant Kumar KULSHRESHTHA ,  Xinhai HAN ,  Bok Hoen KIM ,  Kwangduk Douglas LEE ,  Karthik Thimmavajjula NARASIMHA ,  Ziqing DUAN ,  Deenesh PADHI

IPC: H01L21/683 ,  C23C16/505 ,  C23C16/458

CPC classification number: H01L21/6833 ,  C23C16/4586 ,  C23C16/509 ,  H01J37/32091 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556

Abstract: Techniques are disclosed for methods and apparatuses of an electrostatic chuck suitable for operating at high operating temperatures. In one example, a substrate support assembly is provided. The substrate support assembly includes a substantially disk-shaped ceramic body having an upper surface, a cylindrical sidewall, and a lower surface. The upper surface is configured to support a substrate thereon for processing the substrate in a vacuum processing chamber. The cylindrical sidewall defines an outer diameter of the ceramic body. The lower surface is disposed opposite the upper surface. An electrode is disposed in the ceramic body. A circuit is electrically connected to the electrode. The circuit includes a DC chucking circuit, a first RF drive circuit, and a second RF dive circuit. The DC chucking circuit, the first RF drive circuit and the second RF drive circuit are electrically coupled with the electrode.

公开(公告)号：US20170092511A1

公开(公告)日：2017-03-30

申请号：US15013547

申请日：2016-02-02

Applicant: Applied Materials, Inc.

Inventor： Saptarshi BASU ,  Jeongmin LEE ,  Paul CONNORS ,  Dale R. DU BOIS ,  Prashant Kumar KULSHRESHTHA ,  Karthik Thimmavajjula NARASIMHA ,  Brett BERENS ,  Kalyanjit GHOSH ,  Jianhua ZHOU ,  Ganesh BALASUBRAMANIAN ,  Kwangduk Douglas LEE ,  Juan Carlos ROCHA-ALVAREZ ,  Hiroyuki OGISO ,  Liliya KRIVULINA ,  Rick GILBERT ,  Mohsin WAQAR ,  Venkatanarayana SHANKARAMURTHY ,  Hari K. PONNEKANTI

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01L21/67069 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/32633 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/6708 ,  H01L21/67201 ,  H01L21/68785

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

公开(公告)号：US20160064209A1

公开(公告)日：2016-03-03

申请号：US14934923

申请日：2015-11-06

Applicant: Applied Materials, Inc.

Inventor： Kwangduk Douglas LEE ,  Sudha RATHI ,  Ramprakash SANKARAKRISHNAN ,  Martin Jay SEAMONS ,  Irfan JAMIL ,  Bok Hoen KIM

IPC: H01L21/02 ,  B08B7/00

Abstract: Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.

公开(公告)号：US20160049323A1

公开(公告)日：2016-02-18

申请号：US14824229

申请日：2015-08-12

Applicant: Applied Materials, Inc.

Inventor： Zheng John YE ,  Jay D. PINSON, II ,  Hiroji HANAWA ,  Jianhua ZHOU ,  Xing LIN ,  Ren-Guan DUAN ,  Kwangduk Douglas LEE ,  Bok Hoen KIM ,  Swayambhu P. BEHERA ,  Sungwon HA ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA- ALVAREZ ,  Prashant Kumar KULSHRESHTHA ,  Jason K. FOSTER ,  Mukund SRINIVASAN ,  Uwe P. HALLER ,  Hari K. PONNEKANTI

IPC: H01L21/683 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H01L21/68757 ,  H02N13/00

Abstract: Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.

Abstract translation: 本公开的实施例提供了一种静电卡盘，用于在高温下维持在等离子体反应器中正在加工的基板的平坦度。 在一个实施例中，静电卡盘包括联接到支撑杆的卡盘体，卡盘主体具有基底支撑表面，卡盘体的体积电阻率值约为1×107ohm-cm至约1×1015ohm- 在约250℃至约700℃的温度下，以及嵌入在本体中的电极，电极耦合到电源。 在一个实例中，卡盘主体由氮化铝材料组成，已经被观察到能够在沉积或蚀刻过程期间优化约600℃或更高的夹持性能，或任何其他使用高工作温度和 基板夹紧功能。

公开(公告)号：US20150371851A1

公开(公告)日：2015-12-24

申请号：US14655404

申请日：2014-01-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Kwangduk Douglas LEE ,  Wonseok LEE ,  Martin Jay SEAMONS

IPC: H01L21/033 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/0332 ,  C23C16/26 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/3081 ,  H01L21/31144

Abstract: Methods for forming an amorphous carbon layer with desired film mechanical strength low film stress as well as optical film properties are provided. In one embodiment, a method of forming an amorphous carbon layer includes forming a plasma of a deposition gas mixture including a hydrocarbon gas supplied in a processing chamber by application of a RF source power, applying a low frequency RF bias power and a high frequency RF bias power to a first electrode disposed in the processing chamber, controlling a power ratio of the high frequency to the low frequency RF bias power, and forming an amorphous carbon layer on a substrate disposed in the processing chamber.

Abstract translation: 提供了形成具有期望的膜机械强度低膜应力的非晶碳层以及光学膜性质的方法。 在一个实施方案中，形成无定形碳层的方法包括通过施加RF源功率，施加低频RF偏置功率和施加高频RF偏压功率来形成包括在处理室中供应的烃气体的沉积气体混合物的等离子体 将偏置功率设置在处理室中的第一电极，控制高频与低频RF偏置功率的功率比，以及在设置在处理室中的衬底上形成无定形碳层。

公开(公告)号：US20150228463A1

公开(公告)日：2015-08-13

申请号：US14619138

申请日：2015-02-11

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Martin Jay SEAMONS ,  Abhijit Basu MALLICK ,  Bok Hoen KIM ,  Mukund SRINIVASAN

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32862 ,  C23C16/26 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32357

Abstract: Methods for cleaning a processing chamber to remove amorphous carbon containing residuals from the processing chamber are provided. The cleaning process utilizes a low frequency RF bias power during the cleaning process. In one embodiment, a method of cleaning a processing chamber includes supplying a cleaning gas mixture into a processing chamber, applying a RF bias power of about 2 MHz or lower to a substrate support assembly disposed in the processing chamber to form a plasma in the cleaning gas mixture in the processing chamber, and removing deposition residuals from the processing chamber.

Abstract translation: 提供了用于清洁处理室以从处理室去除含有残留物的无定形碳的方法。 清洁过程在清洁过程中利用低频RF偏置功率。 在一个实施例中，清洁处理室的方法包括将清洁气体混合物供应到处理室中，向设置在处理室中的基板支撑组件施加约2MHz或更低的RF偏置功率以在清洁中形成等离子体 处理室中的气体混合物，并且从处理室去除沉积残余物。

公开(公告)号：US20140273461A1

公开(公告)日：2014-09-18

申请号：US14201700

申请日：2014-03-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Kwangduk Douglas LEE ,  Martin Jay SEAMONS ,  Matthew D. SCOTNEY-CASTLE ,  Martin A. HILKENE ,  Ludovic GODET

IPC: H01L21/314 ,  H01L21/311

CPC classification number: H01L21/02115 ,  C23C16/26 ,  C23C16/56 ,  H01J37/32412 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/0332 ,  H01L21/31155

Abstract: Methods for forming a hydrogen implanted amorphous carbon layer with desired film mechanical strength as well as optical film properties are provided. In one embodiment, a method of a hydrogen implanted amorphous carbon layer includes providing a substrate having a material layer disposed thereon, forming an amorphous carbon layer on the material layer, and ion implanting hydrogen ions from a hydrogen containing gas into the amorphous carbon layer to form a hydrogen implanted amorphous carbon layer.

Abstract translation: 提供了形成具有期望膜机械强度的氢注入非晶碳层以及光学膜性质的方法。 在一个实施例中，氢注入非晶碳层的方法包括提供其上设置有材料层的基板，在所述材料层上形成无定形碳层，以及将氢离子从含氢气体注入到所述非晶碳层中至 形成氢注入非晶碳层。