公开(公告)号：US20150247237A1

公开(公告)日：2015-09-03

申请号：US14594296

申请日：2015-01-12

Applicant: Applied Materials, Inc.

Inventor： Sungwon HA ,  Kwangduk Douglas LEE ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA-ALVAREZ ,  Martin Jay SEAMONS ,  Ziqing DUAN ,  Zheng John YE ,  Bok Hoen KIM ,  Lei JING ,  Ngoc LE ,  Ndanka MUKUTI

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/45565 ,  C23C16/4401 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32449

Abstract: Embodiments described herein relate to a faceplate for improving film uniformity. A semiconductor processing apparatus includes a pedestal, an edge ring and a faceplate having distinct regions with differing hole densities. The faceplate has an inner region and an outer region which surrounds the inner region. The inner region has a greater density of holes formed therethrough when compared to the outer region. The inner region is sized to correspond with a substrate being processed while the outer region is sized to correspond with the edge ring.

Abstract translation: 本文所述的实施例涉及一种用于提高膜均匀性的面板。 半导体处理装置包括具有不同孔洞密度区域的基座，边缘环和面板。 面板具有内部区域和围绕内部区域的外部区域。 当与外部区域相比时，内部区域具有通过其形成的更大密度的孔。 内部区域的尺寸被设计成与被处理的基底相对应，而外部区域的尺寸被设计成与边缘环相对应。

公开(公告)号：US20180230597A1

公开(公告)日：2018-08-16

申请号：US15432619

申请日：2017-02-14

Applicant: Applied Materials, Inc.

Inventor： Ying MA ,  Daemian RAJ ,  Martin Jay SEAMONS ,  Ankit POKHREL ,  Greg CHICHKANOFF ,  Yizhen ZHANG ,  Jingmei LIANG ,  Jay D. PINSON, II ,  Dongqing LI ,  Juan Carlos ROCHA-ALVAREZ

IPC: C23C16/505 ,  C23C16/455 ,  C23C16/458

Abstract: Embodiments disclosed herein generally relate to a plasma processing system. The plasma processing system includes a processing chamber, a chamber seasoning system, and a remote plasma cleaning system. The processing chamber has a chamber body defining a processing region and a plasma field. The chamber seasoning system is coupled to the processing chamber. The chamber seasoning system is configured to season the processing region and the plasma field. The remote plasma cleaning system is in communication with the processing chamber. The remote plasma cleaning system is configured to clean the processing region and the plasma field.

公开(公告)号：US20160017495A1

公开(公告)日：2016-01-21

申请号：US14799799

申请日：2015-07-15

Applicant: Applied Materials, Inc.

Inventor： Yihong CHEN ,  Kelvin CHAN ,  Martin Jay SEAMONS ,  Shaunak MUKHERJEE ,  Abhijit Basu MALLICK ,  Jianhua ZHOU ,  Kang Sub YIM

IPC: C23C16/505

CPC classification number: C23C16/505 ,  C23C16/325 ,  C23C16/4404 ,  C23C16/455 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02203 ,  H01L21/02274

Abstract: Embodiments disclosed herein generally include methods for forming porous low k dielectric films. In one embodiment, a method of forming a porous low k dielectric film on a substrate using PECVD and in situ radical curing in a processing chamber is disclosed. The method includes introducing radicals into a processing region of the processing chamber, introducing a gas mixture into the processing region of the processing chamber, forming a plasma in the processing region and depositing the porous low k dielectric film on the substrate.

Abstract translation: 本文公开的实施方案通常包括形成多孔低k电介质膜的方法。 在一个实施例中，公开了一种使用PECVD在基板上形成多孔低k电介质膜并在处理室中进行原位自由基固化的方法。 该方法包括将自由基引入处理室的处理区域，将气体混合物引入处理室的处理区域，在处理区域中形成等离子体，并在基板上沉积多孔低k电介质膜。

公开(公告)号：US20140017897A1

公开(公告)日：2014-01-16

申请号：US14028025

申请日：2013-09-16

Applicant: Applied Materials, Inc.

Inventor： Martin Jay SEAMONS ,  Sudha RATHI ,  Kwangduk Douglas LEE ,  Deenesh PADHI ,  Bok Hoen KIM ,  Chiu CHAN

IPC: H01L21/64

CPC classification number: H01L21/64 ,  C23C16/0272 ,  C23C16/26 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/31144

Abstract: Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a boron-containing amorphous carbon film is disclosed. The boron-containing amorphous carbon film comprises from about 10 to 60 atomic percentage of boron, from about 20 to about 50 atomic percentage of carbon, and from about 10 to about 30 atomic percentage of hydrogen.

Abstract translation: 本发明的实施例一般涉及集成电路的制造，特别涉及在半导体衬底上沉积含硼无定形碳层。 在一个实施方案中，公开了含硼无定形碳膜。 含硼无定形碳膜包含约10至60原子百分数的硼，约20至约50原子百分比的碳和约10至约30原子百分比的氢。

公开(公告)号：US20240379420A1

公开(公告)日：2024-11-14

申请号：US18781633

申请日：2024-07-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Shi YOU ,  He REN ,  Naomi YOSHIDA ,  Nikolaos BEKIARIS ,  Mehul NAIK ,  Martin Jay SEAMONS ,  Jingmei LIANG ,  Mei-Yee SHEK

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/67

Abstract: Embodiments herein provide for oxygen based treatment of low-k dielectric layers deposited using a flowable chemical vapor deposition (FCVD) process. Oxygen based treatment of the FCVD deposited low-k dielectric layers desirably increases the Ebd to capacitance and reliability of the devices while removing voids. Embodiments include methods and apparatus for making a semiconductor device including: etching a metal layer disposed atop a substrate to form one or more metal lines having a top surface, a first side, and a second side; depositing a passivation layer atop the top surface, the first side, and the second side under conditions sufficient to reduce or eliminate oxygen contact with the one or more metal lines; depositing a flowable layer of low-k dielectric material atop the passivation layer in a thickness sufficient to cover the one or more metal lines; and contacting the flowable layer of low-k dielectric material with oxygen under conditions sufficient to anneal and increase a density of the low-k dielectric material

公开(公告)号：US20220130722A1

公开(公告)日：2022-04-28

申请号：US17505521

申请日：2021-10-19

Applicant: Applied Materials, Inc.

Inventor： Suketu Arun PARIKH ,  Martin Jay SEAMONS ,  Jingmei LIANG ,  Shuchi Sunil OJHA ,  Tom CHOI ,  Nitin K. INGLE ,  Sanjay NATARAJAN

IPC: H01L21/768

Abstract: A substrate processing method includes creating a mask on a top surface of a workpiece. A first portion of a gap fill material is overlaid by the mask and a second portion of the gap fill material is exposed through an opening in the mask. The method further includes exposing the workpiece to a plasma. The method further includes performing a first etching of the first portion of the gap fill material to create a first cavity while the second portion of the gap fill material remains in place, depositing a first metal-containing substance in the first cavity, performing a second etching of the second portion of the gap fill material to create a second cavity while the first metal-containing substance remains in place, and depositing a second metal-containing substance in the second cavity.

公开(公告)号：US20200381248A1

公开(公告)日：2020-12-03

申请号：US16817007

申请日：2020-03-12

Applicant: Applied Materials, Inc.

Inventor： Yong SUN ,  Praket Prakash JHA ,  Jingmei LIANG ,  Martin Jay SEAMONS ,  DongQing LI ,  Shashank SHARMA ,  Abhilash J. MAYUR ,  Wolfgang R. ADERHOLD

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/50 ,  C23C16/30

Abstract: A method of post-treating a dielectric film formed on a surface of a substrate includes positioning a substrate having a dielectric film formed thereon in a processing chamber and exposing the dielectric film to microwave radiation in the processing chamber at a frequency between 5 GHz and 7 GHz.

公开(公告)号：US20160017487A1

公开(公告)日：2016-01-21

申请号：US14472311

申请日：2014-08-28

Applicant: Applied Materials, Inc.

Inventor： Yihong CHEN ,  Shaunak MUKHERJEE ,  Martin Jay SEAMONS ,  Kelvin CHAN ,  Abhijit Basu MALLICK ,  Bok Hoen KIM ,  Jianhua ZHOU

IPC: C23C16/34 ,  C23C16/50 ,  C23C16/40 ,  C23C16/44

CPC classification number: C23C16/34 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/345 ,  C23C16/36 ,  C23C16/401 ,  C23C16/403

Abstract: A method of processing a substrate includes positioning the substrate within a processing zone of a processing chamber and removing an oxide layer from a surface of the substrate by introducing first radicals into the processing zone. The method further includes, after removing the oxide layer, introducing at least one first precursor gas into the processing zone and depositing at least one dielectric layer onto the surface by exposing the at least one first precursor gas to second radicals. After positioning the substrate within the processing zone, the substrate is not removed from the processing chamber until each of removing the oxide layer and depositing the at least one dielectric layer is performed.

Abstract translation: 一种处理衬底的方法包括将衬底定位在处理室的处理区内，并通过将第一自由基引入处理区从衬底的表面去除氧化物层。 该方法还包括在除去氧化物层之后，通过将至少一种第一前体气体暴露于第二自由基将至少一种第一前体气体引入到处理区域中并将至少一个电介质层沉积到表面上。 在将衬底定位在处理区域内之前，基板不会从处理室中移除，直到执行去除氧化物层和沉积至少一个电介质层。

公开(公告)号：US20200171536A1

公开(公告)日：2020-06-04

申请号：US16692841

申请日：2019-11-22

Applicant: Applied Materials, Inc.

Inventor： Martin Jay SEAMONS ,  Byung Kook AHN ,  Jingmei LIANG

IPC: B05D1/00 ,  C23C16/56 ,  B05D3/06

Abstract: Embodiments described herein provide a method of forming a silicon-and-oxygen-containing layer having covalent Si—O—Si bonds by cross-linking terminal silanol groups. The method includes positioning a substrate in a chamber. The substrate has one or more trenches including a width of 10 nanometers (nm) or less, and an aspect ratio of 2:1 or greater. The aspect ratio is defined by a ratio of a depth to the width of the one or more trenches. A silicon-and-oxygen-containing layer is disposed over the one or more trenches. The silicon-and-oxygen-containing layer has terminal silanol groups. The substrate is heated, and the silicon-and-oxygen-containing layer is exposed to an ammonia or amine group-containing precursor distributed across a process volume.

公开(公告)号：US20160064209A1

公开(公告)日：2016-03-03

申请号：US14934923

申请日：2015-11-06

Applicant: Applied Materials, Inc.

Inventor： Kwangduk Douglas LEE ,  Sudha RATHI ,  Ramprakash SANKARAKRISHNAN ,  Martin Jay SEAMONS ,  Irfan JAMIL ,  Bok Hoen KIM

IPC: H01L21/02 ,  B08B7/00

Abstract: Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.