-
41.发明申请公开(公告)号：US20070230065A1
公开(公告)日：2007-10-04
申请号：US11760254
申请日：2007-06-08
申请人： Hiromi YUASA , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
发明人： Hiromi YUASA , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3912 , G11B5/3919 , G11B5/3922 , G11B5/3929 , G11B5/398 , H01F10/324 , H01L43/08
摘要： A magnetoresistance effect element a stacked film including a magnetization fixed layer in which the direction of magnetization is substantially fixed to one direction, and a magnetization free layer in which the direction of magnetization varies in response to an external magnetic field, an electrode connected to a part of a principal plane of the stacked film, the magnetoresistance effect element having a resistance varying in response to a relative angle between the direction of magnetization in the magnetization fixed layer and the direction of magnetization in the magnetization free layer, a sense current detecting the variation of the resistance being applied to the film planes of the magnetization fixed layer and the magnetization free layer via the electrode in a direction substantially perpendicular to the magnetization fixed layer and the magnetization free layer. The electrode includes a pillar electrode portion substantially perpendicularly extending from the principal plane of the stacked film, and a feed portion extending substantially in parallel to the principal plane of the stacked film and the pillar electrode portion has two conductive layers in the central portion and outer peripheral portion thereof, and the sense current being caused to flow in the opposite directions to each other in the central portion and the outer peripheral portion.
摘要翻译： 一种磁阻效应元件，包括磁化方向基本上固定在一个方向上的磁化固定层和磁化方向响应于外部磁场而变化的磁化自由层的堆叠膜，连接到 磁阻效应元件的电阻响应于磁化固定层中的磁化方向与磁化自由层中的磁化方向之间的相对角度而变化的磁阻效应元件的一部分， 在与磁化固定层和磁化自由层基本垂直的方向上，通过电极施加到磁化固定层和无磁化层的膜平面上的电阻的变化。 所述电极包括从所述层叠膜的主面大致垂直延伸的柱状电极部和与所述层叠膜的主面大致平行地延伸的供电部，所述柱电极部在所述中央部和外部具有两个导电层 其周边部分，并且感测电流在中心部分和外周部分中沿相反方向流动。
-
42.发明申请公开(公告)号：US20050152077A1
公开(公告)日：2005-07-14
申请号：US11072270
申请日：2005-03-07
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3906 , G11C11/16 , H01F10/324 , H01F10/3268 , H01L43/10 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12465 , Y10T428/12868 , Y10T428/12917 , Y10T428/12951 , Y10T428/265 , Y10T428/32
摘要： A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula FeaCobNic (where a+b+c=100 at %, and a≦75 at %, b≦75 at %, and c≦63 at %), or formed of an alloy having a body-centered cubic crystal structure.
摘要翻译： 磁阻装置包括磁化固定层，磁化自由层，形成在磁化固定层和磁化自由层之间的非磁性中间层，以及允许感测电流在基本垂直于堆叠平面的方向上流动的电极，包括 磁化钉扎层，非磁性中间层和无磁化层。 磁化固定层和无磁化层中的至少一个基本上由二元或三元合金形成，由二元或三元合金表示，其由式Fe / SUB>（其中a + b + c = 100at％，a≤75at％，b <= 75at％，c <= 63at％），或者由具有体心立方 晶体结构。
-
公开(公告)号：US20050083613A1
公开(公告)日：2005-04-21
申请号：US10968958
申请日：2004-10-21
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. Each magnetization direction of the first and second magnetization free layers is allowed to vary independently in response to a signal magnetic flux from a medium. The first and second magnetization free layers produce a magnetoresistance effect in accordance with the magnetization directions thereof.
-
44.发明授权公开(公告)号：US06690553B2
公开(公告)日：2004-02-10
申请号：US09837373
申请日：2001-04-19
IPC分类号： G11B5139
CPC分类号： H01F10/3268 , B82Y10/00 , B82Y25/00 , G11B5/09 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01L27/222 , H01L43/08
摘要： A magnetoresistance effect device comprises a magnetic multi-layer film having at least an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film, and a second ferromagnetic film formed in the order on the front surface portion of the substrate, the magnetic multi-layer film having giant magnetoresistance effect, at least the second ferromagnetic film having a shape corresponding to a magnetic field detecting portion. The bias magnetic field applying films are disposed on a conductive film of the magnetic multi-layer film at outer portions of both edge portions of the magnetic field detecting portion of the magnetoresistance effective film. Alternatively, the second ferromagnetic film has a first portion corresponding to the magnetic field detecting portion and a second portion corresponding to the outer portions of both the edge portions of the magnetic field detecting portion, the film thickness of the second portion being smaller than the film thickness of the first portion. The bias magnetic field applying films are formed at the outer portions of both the edge portions of the magnetic field detecting portion of the second ferromagnetic film. With the reversely structured magnetoresistance effect film and the laminate positions of the bias magnetic field applying films, in addition to suppressing the reproduction fringe and Barkhausen noise, the decrease of contact resistance, the suppression of insulation detect, and good linear response characteristic can be accomplished.
摘要翻译： 磁阻效应器件包括至少具有反铁磁膜，第一铁磁膜，非磁性膜和在衬底的前表面部分上依次形成的第二铁磁膜的磁性多层膜，磁性多层膜 至少第二铁磁膜具有与磁场检测部分对应的形状。 偏磁场施加膜在磁阻效应膜的磁场检测部分的两个边缘部分的外部部分设置在磁性多层膜的导电膜上。 或者，第二铁磁膜具有对应于磁场检测部分的第一部分和对应于磁场检测部分的两个边缘部分的外部的第二部分，第二部分的膜厚度小于膜 第一部分的厚度。 偏磁场施加膜形成在第二铁磁膜的磁场检测部分的两个边缘部分的外部。 利用反向结构的磁阻效应膜和偏置磁场施加膜的叠层位置，除了抑制再生条纹和巴克豪森噪声之外，还可以实现接触电阻的降低，绝缘检测的抑制和良好的线性响应特性 。
-
45.发明授权公开(公告)号：US06495275B2
公开(公告)日：2002-12-17
申请号：US09927379
申请日：2001-08-13
申请人： Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
发明人： Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
IPC分类号： G11B5127
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/00 , G11B5/3143 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01F10/3259 , H01F10/3268 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/1193 , Y10T428/26 , Y10T428/265
摘要： A magnetoresistance effect element includes a free layer, a pinned layer and a non-magnetic intermediate layer interposed between the free layer and the pinned layer. Additionally, a metal barrier layer is provided adjacent to the first magnetic layer. An electron reflecting layer located adjacent to the metal barrier layer contains at least one selected from oxides, nitrides, carbides, fluorides, chlorides, sulfides and borides.
摘要翻译： 磁阻效应元件包括自由层，被钉扎层和介于自由层和钉扎层之间的非磁性中间层。 另外，金属阻挡层设置成与第一磁性层相邻。 位于金属阻挡层附近的电子反射层含有选自氧化物，氮化物，碳化物，氟化物，氯化物，硫化物和硼化物中的至少一种。
-
公开(公告)号：US06368706B1
公开(公告)日：2002-04-09
申请号：US09111884
申请日：1998-07-08
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , Y10S428/90 , Y10T428/11 , Y10T428/1114 , Y10T428/1121 , Y10T428/12458 , Y10T428/12875 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要： The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.
-
47.发明授权公开(公告)号：US06303218B1
公开(公告)日：2001-10-16
申请号：US09273496
申请日：1999-03-22
申请人： Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
发明人： Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
IPC分类号： G11B566
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/00 , G11B5/3143 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01F10/3259 , H01F10/3268 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/1193 , Y10T428/26 , Y10T428/265
摘要： According to the another aspect of the invention, a magnetoresistance effect element having a magnetoresistance effect film which includes a crystal growth controlling layer as one of films therein, characterized in that a roughness along a boundary between films overlying said crystal growth controlling layer is smaller than a roughness along a boundary between films underlying said crystal growth controlling layer is provided. According to the another aspect of the invention, a magnetoresistance effect element comprising a free layer, pinned layer and a non-magnetic intermediate layer interposed between said free layer and pinned layer, characterized in further comprising a metal barrier layer provided adjacent to said first magnetic layer, and an electron reflecting layer located adjacent to said metal barrier layer and containing at least one selected from oxides, nitrides, carbides, fluorides, chlorides, sulfides and borides is also provided.
摘要翻译： 根据本发明的另一方面，一种具有磁阻效应膜的磁电阻效应元件，其包括作为其中的膜之一的晶体生长控制层，其特征在于，沿着覆盖所述晶体生长控制层的膜之间的边界的粗糙度小于 提供沿着所述晶体生长控制层下面的膜之间的边界的粗糙度。 根据本发明的另一方面，一种磁阻效应元件，包括置于所述自由层和钉扎层之间的自由层，被钉扎层和非磁性中间层，其特征在于还包括与所述第一磁体相邻设置的金属阻挡层 还提供了与所述金属阻挡层相邻并且包含选自氧化物，氮化物，碳化物，氟化物，氯化物，硫化物和硼化物中的至少一种的电子反射层。
-
公开(公告)号：US6159593A
公开(公告)日：2000-12-12
申请号：US61070
申请日：1998-04-16
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , Y10S428/90 , Y10T428/11 , Y10T428/1114 , Y10T428/1121 , Y10T428/12458 , Y10T428/12875 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要： The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.
-
公开(公告)号：US06088195A
公开(公告)日：2000-07-11
申请号：US827122
申请日：1997-03-27
申请人： Yuzo Kamiguchi , Kazuhiro Saito , Hideaki Fukuzawa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
发明人： Yuzo Kamiguchi , Kazuhiro Saito , Hideaki Fukuzawa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G01R33/09 , G11B5/39 , G11C11/15 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/16 , H01F10/18 , H01F10/187 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/3281 , H01L43/08 , G11B2005/3996 , G11B5/3916 , G11B5/3932 , G11B5/3967 , H01F10/3295
摘要： A magnetoresistance effect element is provided with a laminated film which is composed of a first ferromagnetic conductive layer, a non-magnetic conductive layer superposed on the first ferromagnetic film, and a second ferromagnetic conductive layer superposed on the non-magnetic conductor layer, and which is provided with a pair of electrodes formed on the laminated film, wherein at least one of the first and second magnetic conductive layers comprises at least a first ferromagnetic layer and a second ferromagnetic film, for example, Co alloy films whose directions of axis of easy magnetization are different from each other. Furthermore, this element is a magnetoresistance effect element provided with a spin valve film having a non-magnetic layer disposed between a first magnetic layer composed of a laminated film of such a ferromagnetic film as a Co based magnetic alloy and a soft magnetic layer, and a second magnetic layer, wherein the soft magnetic layer is composed of a soft magnetic material laminated film of a soft magnetic material film of one kind or soft magnetic material films of two or more kinds, and values of their magnetization M.sub.s (T), film thickness d(nm), and anisotropic magnetic field H.sub.k (Oe) satisfy .SIGMA.(M.sub.s .times.d.times.H.sub.k)>30(Tnm Oe).
摘要翻译： 磁阻效应元件设置有由第一铁磁性导电层，叠置在第一铁磁膜上的非磁性导电层和叠加在非磁性导体层上的第二铁磁性导电层构成的层叠膜， 设置有形成在层压膜上的一对电极，其中第一和第二导电层中的至少一个至少包括第一铁磁层和第二铁磁膜，例如Co合金膜的方向的轴线方向 磁化彼此不同。 此外，该元件是具有自旋阀膜的磁阻效应元件，该自旋阀膜具有设置在由作为Co基磁性合金的这种铁磁膜的层叠膜构成的第一磁性层和软磁性层之间的非磁性层，以及 第二磁性层，其中软磁性层由一种软磁性材料膜或两种或多种软磁性材料膜的软磁性材料层压膜及其磁化强度Ms（T），膜 厚度d（nm）和各向异性磁场Hk（Oe）满足SIGMA（MsxdxHk）> 30（Tnm Oe）。
-
公开(公告)号：US6043515A
公开(公告)日：2000-03-28
申请号：US931523
申请日：1997-09-16
申请人： Yuzo Kamiguchi , Yuzo Hirayama , Masashi Sahashi
发明人： Yuzo Kamiguchi , Yuzo Hirayama , Masashi Sahashi
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/0425 , G02F3/026 , H01S2301/173 , H01S5/0607 , H01S5/32341 , H01S5/3404
摘要： An optical semiconductor device has a structure in which a semiconductor active layer is sandwiched by a p-type semiconductor cladding layer and an n-type semiconductor cladding layer and a p-type contact layer is formed on the p-type semiconductor cladding layer side and an n-type contact layer is formed on the n-type semiconductor cladding layer side, wherein two ferromagnetic layers are formed on the n-type contact layer and two ferromagnetic layers are formed on the p-type contact layer. Magnetization directions of a pair of ferromagnetic layers vertically opposed to each other are set to be parallel to each other, and the magnetization directions of adjacent ferromagnetic layers are inverted to each other.
摘要翻译： 光半导体器件具有这样的结构，其中半导体有源层被p型半导体包层和n型半导体包覆层夹在中间，p型接触层形成在p型半导体包层侧， 在n型半导体包层侧形成n型接触层，其中在n型接触层上形成两个铁磁层，并在p型接触层上形成两个铁磁层。 将彼此垂直相对的一对铁磁层的磁化方向设定为彼此平行，并且相邻的铁磁层的磁化方向相互反转。
-
-
-
-
-
-
-
-
-
搜索结果
87 条记录 (耗时 0.035 秒)
