公开(公告)号：US06229678B1

公开(公告)日：2001-05-08

申请号：US09011631

申请日：1999-01-07

Applicant: Song Sheng Xue ,  Patrick J. Ryan ,  James F. Dolejsi

Inventor： Song Sheng Xue ,  Patrick J. Ryan ,  James F. Dolejsi

IPC: G11B5139

CPC classification number: B82Y25/00 ,  G01R33/093 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932

Abstract: An improved magnetoresistive read sensor (100) and a method of fabricating magnetoresistive read sensor (100) that eliminates film removal is disclosed. The magnetoresistive sensor (100) is formed by positioning a first mask (128) on a gap layer (104) split into three regions due to subsequent layers. A first mask (128) is positioned on the central region of the gap layer (104) and a first hard-biasing material (106) is deposited onto the outside regions of the gap layer (104). The first mask (128) is removed and a magnetoresistive element (116) is deposited onto the outside regions of the first hard-biasing material (106) and the central region of gap layer (104), thereby forming an active region (122), a first passive region (124) and a second passive region (126) of the magnetoresistive sensor (100). A spacer layer (118) is deposited onto the magnetoresistive element (116) in all three regions and a soft adjacent layer (120) is deposited onto the spacer layer (118) in all three regions. A second mask (134) is positioned over the active region (122) of the sensor and a second hard-biasing material (110) is deposited onto the soft adjacent layer (120) in the first passive region (124) and the second passive region (126). The second mask (134) is removed and contacts (112, 114) are positioned onto the second hard- biasing material (110).

Abstract translation: 公开了改进的磁阻读取传感器（100）和制造消除膜去除的磁阻读取传感器（100）的方法。 通过将第一掩模（128）定位在由于后续层分裂成三个区域的间隙层（104）上而形成磁阻传感器（100）。 第一掩模（128）位于间隙层（104）的中心区域上，并且第一硬偏压材料（106）沉积在间隙层（104）的外部区域上。 去除第一掩模（128）并且将磁阻元件（116）沉积到第一硬偏压材料（106）的外部区域和间隙层（104）的中心区域上，由此形成有源区域（122） ，磁阻传感器（100）的第一无源区（124）和第二无源区（126）。 在所有三个区域中，隔离层（118）沉积到磁阻元件（116）上，并且在所有三个区域中将软相邻层（120）沉积到间隔层（118）上。 第二掩模（134）被定位在传感器的有源区域（122）上方，并且第二硬偏压材料（110）沉积在第一无源区域（124）中的软相邻层（120）上，并且第二被动 区域（126）。 移除第二掩模（134）并将触头（112,114）定位在第二硬质偏置材料（110）上。

公开(公告)号：US06788502B1

公开(公告)日：2004-09-07

申请号：US09388885

申请日：1999-09-02

Applicant: Hardayal (Harry) Singh Gill

Inventor： Hardayal (Harry) Singh Gill

IPC: G11B5139

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/012 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  G11B2005/3996

Abstract: A magnetic tunnel junction sensor is provided having a laminated free layer comprising a first sublayer formed of Co—Fe in contact with a spacer layer and a second sublayer formed of Ni—Fe—Mo. The Ni—Fe—Mo material of the second sublayer has a magnetocrystalline anisotropy constant, k, that is much smaller than that of Ni—Fe. Due to the small value of k of the Ni—Fe—Mo material used to fabricate the second sublayer of the free layer, the thickness of the Co—Fe first sublayer may be increased to improve manufacturability while retaining a low net stiffness of the free layer for high sensitivity of the MTJ sensor in response to signal fields from data magnetically recorded on a disk. The thicker Co—Fe first sublayer results in a higher magnetoresistance coefficient of the improved MTJ sensor.

Abstract translation: 提供了具有层叠自由层的磁性隧道结传感器，该层叠自由层包括由与间隔层接触的Co-Fe形成的第一子层和由Ni-Fe-Mo形成的第二子层。 第二子层的Ni-Fe-Mo材料具有比Ni-Fe小得多的磁晶各向异性常数k。 由于用于制造自由层的第二子层的Ni-Fe-Mo材料的k值较小，可以增加Co-Fe第一子层的厚度以提高可制造性，同时保持自由层的低净刚度 层，用于响应于磁盘上记录在磁盘上的数据的信号场，MTJ传感器的高灵敏度。 较厚的Co-Fe第一子层导致改进的MTJ传感器的较高的磁阻系数。

公开(公告)号：US06583966B2

公开(公告)日：2003-06-24

申请号：US09956360

申请日：2001-09-20

Applicant: Cherng-Chyi Han ,  Chyu Jiuh Torng ,  Mao-Min Chen

Inventor： Cherng-Chyi Han ,  Chyu Jiuh Torng ,  Mao-Min Chen

IPC: G11B5139

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3146 ,  G11B5/3163 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49025 ,  Y10T29/49032

Abstract: A high data-rate stitched pole magnetic read/write-head combining sputtered and plated high magnetic moment materials and a method for fabricating same. The plating and stitching aspects of this fabrication allow the formation of a very narrow write-head, while the sputtering permits the use of high magnetic moment materials having high resistivity and low coercivity.

Abstract translation: 组合溅射和​​电镀高磁矩材料的高数据速率缝合磁极读/写头及其制造方法。 该制造的电镀和缝合方面允许形成非常窄的写入头，而溅射允许使用具有高电阻率和低矫顽力的高磁矩材料。

公开(公告)号：US06519123B1

公开(公告)日：2003-02-11

申请号：US09392554

申请日：1999-09-09

Applicant: Junichi Sugawara ,  Eiji Nakashio ,  Seiji Kumagai ,  Yoshito Ikeda

Inventor： Junichi Sugawara ,  Eiji Nakashio ,  Seiji Kumagai ,  Yoshito Ikeda

IPC: G11B5139

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/06 ,  G11B5/3163 ,  G11B5/33 ,  G11B5/332 ,  G11B5/3903 ,  G11B2005/3996 ,  H01L43/08

Abstract: A magnetic tunneling element in which the tunnel current flows reliably to exhibit a stable magnetic tunneling effect. The magnetic tunneling element includes a first magnetic layer, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer. The tunnel barrier layer is a metal film oxidized by inductively coupled oxygen plasma and a second magnetic layer is formed on the tunnel barrier layer.

Abstract translation: 隧道电流可靠地流动以表现出稳定的磁隧道效应的磁隧道元件。 磁隧道元件包括第一磁性层，形成在第一磁性层上的隧道势垒层和形成在隧道势垒层上的第二磁性层。 隧道势垒层是通过电感耦合氧等离子体氧化的金属膜，在隧道势垒层上形成第二磁性层。

公开(公告)号：US06801411B1

公开(公告)日：2004-10-05

申请号：US09247882

申请日：1999-02-10

Applicant: Marcos Lederman ,  Matthew R. Gibbons

Inventor： Marcos Lederman ,  Matthew R. Gibbons

IPC: G11B5139

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/313 ,  G11B5/3903 ,  G11B5/3954 ,  G11B5/3967

Abstract: A dual-stripe current-pinned spin valve magnetoresistive read sensor includes a first soft ferromagnetic (FM) layer separated from a second soft FM layer by a first spacer layer formed of conductive material. The first spacer layer is also configured to receive a first biasing current for generating a first magnetic field of sufficient strength to saturate the first soft FM layer. The read sensor further includes a third soft FM layer and a fourth soft FM layer separated by a second spacer layer formed of conductive material. The second spacer layer is configured to receive a second biasing current for generating a second magnetic field of sufficient strength to saturate the fourth soft FM layer. An insulation layer also is disposed between the second soft FM layer and the third FM layer. The first and second biasing currents thereby pin magnetizations of the first and fourth soft FM layers, while having a combined negligible effect on magnetizations of substantial portions of the second and third soft ferromagnetic layers.

Abstract translation: 双条状电流钉扎自旋阀磁阻读取传感器包括通过由导电材料形成的第一间隔层与第二软FM层隔开的第一软铁磁（FM）层。 第一间隔层还被配置为接收第一偏置电流，用于产生具有足够强度的第一磁场以使第一软FM层饱和。 读取传感器还包括由导电材料形成的第二间隔层隔开的第三软FM层和第四软FM层。 第二间隔层被配置为接收第二偏置电流，用于产生具有足够强度的第二磁场以饱和第四软FM层。 绝缘层也设置在第二软FM层和第三FM层之间。 第一和第二偏置电流因此引起第一和第四软FM层的磁化，同时对第二和第三软铁磁层的实质部分的磁化具有组合的可忽略的影响。

公开(公告)号：US06690553B2

公开(公告)日：2004-02-10

申请号：US09837373

申请日：2001-04-19

Applicant: Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Hiromi Fuke ,  Kazuhiro Saito ,  Masashi Sahashi

Inventor： Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Hiromi Fuke ,  Kazuhiro Saito ,  Masashi Sahashi

IPC: G11B5139

CPC classification number: H01F10/3268 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/09 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  H01L27/222 ,  H01L43/08

Abstract: A magnetoresistance effect device comprises a magnetic multi-layer film having at least an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film, and a second ferromagnetic film formed in the order on the front surface portion of the substrate, the magnetic multi-layer film having giant magnetoresistance effect, at least the second ferromagnetic film having a shape corresponding to a magnetic field detecting portion. The bias magnetic field applying films are disposed on a conductive film of the magnetic multi-layer film at outer portions of both edge portions of the magnetic field detecting portion of the magnetoresistance effective film. Alternatively, the second ferromagnetic film has a first portion corresponding to the magnetic field detecting portion and a second portion corresponding to the outer portions of both the edge portions of the magnetic field detecting portion, the film thickness of the second portion being smaller than the film thickness of the first portion. The bias magnetic field applying films are formed at the outer portions of both the edge portions of the magnetic field detecting portion of the second ferromagnetic film. With the reversely structured magnetoresistance effect film and the laminate positions of the bias magnetic field applying films, in addition to suppressing the reproduction fringe and Barkhausen noise, the decrease of contact resistance, the suppression of insulation detect, and good linear response characteristic can be accomplished.

Abstract translation: 磁阻效应器件包括至少具有反铁磁膜，第一铁磁膜，非磁性膜和在衬底的前表面部分上依次形成的第二铁磁膜的磁性多层膜，磁性多层膜 至少第二铁磁膜具有与磁场检测部分对应的形状。 偏磁场施加膜在磁阻效应膜的磁场检测部分的两个边缘部分的外部部分设置在磁性多层膜的导电膜上。 或者，第二铁磁膜具有对应于磁场检测部分的第一部分和对应于磁场检测部分的两个边缘部分的外部的第二部分，第二部分的膜厚度小于膜 第一部分的厚度。 偏磁场施加膜形成在第二铁磁膜的磁场检测部分的两个边缘部分的外部。 利用反向结构的磁阻效应膜和偏置磁场施加膜的叠层位置，除了抑制再生条纹和巴克豪森噪声之外，还可以实现接触电阻的降低，绝缘检测的抑制和良好的线性响应特性 。

公开(公告)号：US06215631B1

公开(公告)日：2001-04-10

申请号：US08947875

申请日：1997-10-09

Applicant: Junichi Fujikata ,  Masafumi Nakada

Inventor： Junichi Fujikata ,  Masafumi Nakada

IPC: G11B5139

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268 ,  H01L43/08

Abstract: A magnetoresistive effect film has a lamination of an antiferromagnetic thin film, a magnetic thin film that is in contact with the antiferromagnetic thin film, a non-magnetic thin film that is in contact with the magnetic film, and another magnetic thin film that is in contact with the non-magnetic thin film. With a bias magnetic field of Hr on the antiferromagnetic thin film and a coercivity Hc2 of the other magnetic thin film, the condition Hc2

Abstract translation: 磁阻效应膜具有反铁磁性薄膜，与反铁磁性薄膜接触的磁性薄膜，与磁性膜接触的非磁性薄膜以及与磁性薄膜接触的另一种磁性薄膜 与非磁性薄膜接触。 在反铁磁薄膜上具有Hr的偏置磁场和另一磁性薄膜的矫顽力Hc2，满足条件Hc2

公开(公告)号：US06671140B1

公开(公告)日：2003-12-30

申请号：US09576775

申请日：2000-05-23

Applicant: Nobuyuki Ishiwata

Inventor： Nobuyuki Ishiwata

IPC: G11B5139

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0005

Abstract: A first magnetic layer (3) is laminated on a magnetic yoke film (2) forming a closed magnetic circuit containing a magnetic gap so as to be magnetically coupled to the magnetic yoke film (2), and a magnetic separation layer (4), a second magnetic layer (5) and an antiferromagnetic layer (6) are laminated on the first magnetic layer (3). Further, a pair of electrodes (1, 7) are formed so that the laminate comprising the above layers is sandwiched between the electrodes. A permanent magnet film 8 is disposed to apply a bias magnetic field to the first magnetic layer (3). The magnetic separation layer (4) is formed of an insulator. Tunnel current is made to flow between the electrodes (1, 7) through the magnetic separation layer (4), and magnetic signals in the magnetic yoke film (2) are detected by using the antiferromagnetic tunnel magnetoresistance effect that the tunnel current is varied in accordance with variation of the difference in the magnetization direction between the first magnetic layer (3) and the second magnetic layer (5).

Abstract translation: 第一磁性层（3）层压在磁轭膜（2）上，形成包含磁隙的闭合磁路以与磁轭膜（2）磁耦合，以及磁分离层（4）， 在第一磁性层（3）上层叠第二磁性层（5）和反铁磁性层（6）。 此外，形成一对电极（1,7），使得包含上述层的层压体夹在电极之间。 设置永磁体膜8以向第一磁性层（3）施加偏置磁场。 磁分离层（4）由绝缘体形成。 使隧道电流通过磁分离层（4）在电极（1,7）之间流动，并且通过使用隧道电流变化的反铁磁隧道磁阻效应来检测磁轭膜（2）中的磁信号 根据第一磁性层（3）和第二磁性层（5）之间的磁化方向的差异的变化。

公开(公告)号：US06636399B2

公开(公告)日：2003-10-21

申请号：US09927364

申请日：2001-08-13

Applicant: Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Hiromi Fuke ,  Kazuhiro Saito ,  Masashi Sahashi

Inventor： Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Hiromi Fuke ,  Kazuhiro Saito ,  Masashi Sahashi

IPC: G11B5139

CPC classification number: H01F10/3268 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/09 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  H01L27/222 ,  H01L43/08

Abstract: A magnetoresistance effect device comprises a magnetic multi-layer film having at least an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film, and a second ferromagnetic film formed in the order on the front surface portion of the substrate, the magnetic multi-layer film having giant magnetoresistance effect, at least the second ferromagnetic film having a shape corresponding to a magnetic field detecting portion. The bias magnetic field applying films are disposed on a conductive film of the magnetic multi-layer film at outer portions of both edge portions of the magnetic field detecting portion of the magnetoresistance effective film. Alternatively, the second ferromagnetic film has a first portion corresponding to the magnetic field detecting portion and a second portion corresponding to the outer portions of both the edge portions of the magnetic field detecting portion, the film thickness-of the second portion being smaller than the film thickness of the first portion. The bias magnetic field applying films are formed at the outer portions of both the edge portions of the magnetic field detecting portion of the second ferromagnetic film. With the reversely structured magnetoresistance effect film and the laminate positions of the bias magnetic field applying films, in addition to suppressing the reproduction fringe and Barkhausen noise, the decrease of contact resistance, the suppression of insulation detect, and good linear response characteristic can be accomplished.

公开(公告)号：US06552879B2

公开(公告)日：2003-04-22

申请号：US09768631

申请日：2001-01-23

Applicant: Steven Howard Voldman

Inventor： Steven Howard Voldman

IPC: G11B5139

CPC classification number: G11B5/40 ,  G11B5/3103 ,  G11B5/3967

Abstract: An ESD protective circuit is described which has a very low, variable turn-on threshold by using a shunting MOSFET which has an isolated substrate/body which is connected to an electrode that is provided in addition to the gate, source and drain electrodes. A variable gate voltage which is preferably a function of an ESD voltage is used to trigger the MOSFET into conduction. A voltage is applied to the substrate/body of the MOSFET to lower the turn-on voltage. The voltage on the substrate allows the turn-on voltage to be adjusted for different applications and/or to be adjusted dynamically to respond to events. The substrate voltage is also preferably derived from the ESD voltage. Preferably the MOSFET has an epitaxial region with an electrode and a subcollector with an electrode. The epitaxial region electrode can be connected to the gate to improve the turn-on performance. The subcollector electrode can be connected to the substrate/body electrode to contribute to lowering the turn-on voltage. A preferred embodiment uses an ESD protective device according to the invention to protect a magnetic transducer in a data storage system.