Invention Grant
US06519123B1 Method to manufacture magnetic tunneling elements using inductively coupled plasma
有权
使用电感耦合等离子体制造磁性隧道元件的方法
- Patent Title: Method to manufacture magnetic tunneling elements using inductively coupled plasma
- Patent Title (中): 使用电感耦合等离子体制造磁性隧道元件的方法
-
Application No.: US09392554Application Date: 1999-09-09
-
Publication No.: US06519123B1Publication Date: 2003-02-11
- Inventor: Junichi Sugawara , Eiji Nakashio , Seiji Kumagai , Yoshito Ikeda
- Applicant: Junichi Sugawara , Eiji Nakashio , Seiji Kumagai , Yoshito Ikeda
- Priority: JP10-263695 19980917
- Main IPC: G11B5139
- IPC: G11B5139
Abstract:
A magnetic tunneling element in which the tunnel current flows reliably to exhibit a stable magnetic tunneling effect. The magnetic tunneling element includes a first magnetic layer, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer. The tunnel barrier layer is a metal film oxidized by inductively coupled oxygen plasma and a second magnetic layer is formed on the tunnel barrier layer.
Information query
