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    Waveguide path coupling-type photodiode
    1.
    发明授权
    Waveguide path coupling-type photodiode 有权
    波导路耦合型光电二极管

    公开(公告)号：US08467637B2

    公开(公告)日：2013-06-18

    申请号：US12598162

    申请日：2008-04-30

    Applicant: Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

    Inventor： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

    IPC: G02B6/12 ,  G02B6/26 ,  H01L29/47

    CPC classification number: H01L31/022408 ,  B82Y20/00 ,  G02B6/1226 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/02325

    Abstract: In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2 ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.

    Abstract translation: 在波导路耦合型光电二极管中，相邻地配置有半导体光吸收层和光波导路径芯。 由至少一层形成的电极安装在半导体光吸收层和光波导路径芯的边界部分。 电极以（1/100）λ到λλ通过光波导路径芯透射的光的波长的间隔排列。 至少一部分电极嵌入在半导体光吸收层中。 从半导体光吸收层的表面嵌入深度是不大于λ/（2ns）[ns：半导体光吸收层的折射率]的值。 至少一层电极由可以表面等离子体激发的材料构成。

    PHOTODETECTOR, OPTICAL COMMUNICATION DEVICE EQUIPPED WITH THE SAME, METHOD FOR MAKING OF PHOTODETECTOR, AND METHOD FOR MAKING OF OPTICAL COMMUNICATION DEVICE
    2.
    发明申请
    PHOTODETECTOR, OPTICAL COMMUNICATION DEVICE EQUIPPED WITH THE SAME, METHOD FOR MAKING OF PHOTODETECTOR, AND METHOD FOR MAKING OF OPTICAL COMMUNICATION DEVICE 有权
    光电转换器，配备该光通信设备的光通信设备，光电转换器的制作方法和光通信设备的制作方法

    公开(公告)号：US20130113064A1

    公开(公告)日：2013-05-09

    申请号：US13810360

    申请日：2011-06-15

    Applicant: Daisuke Okamoto ,  Junichi Fujikata

    Inventor： Daisuke Okamoto ,  Junichi Fujikata

    IPC: H01L31/0232

    CPC classification number: G02B6/12004 ,  G02B6/4214 ,  G02B6/4246 ,  G02F1/00 ,  H01L31/1035 ,  H01L31/105 ,  H01L31/1085

    Abstract: The present invention provides a photodetector which solves the problem of low sensitivity of a photodetector, an optical communication device equipped with the same, and a method for making the photodetector, and a method for making the optical communication device. The photodetector includes a substrate, a lower cladding layer arranged on the substrate, an optical waveguide arranged on the lower cladding layer, an intermediate layer arranged on the optical waveguide, a optical absorption layer arranged on the intermediate layer, a pair of electrodes arranged on the optical absorption layer, and wherein the optical absorption layer includes a IV-group or III-V-group single-crystal semiconductor, and the optical absorption layer absorbs an optical signal propagating through the optical waveguide.

    Abstract translation: 本发明提供了一种解决光电检测器的灵敏度低的问题的光检测器，配备该光检测器的光通信装置及其制造方法，以及制造该光通信装置的方法。 该光检测器包括基板，布置在基板上的下包覆层，布置在下包层上的光波导，布置在光波导上的中间层，布置在中间层上的光吸收层，一对电极， 所述光吸收层，其中所述光吸收层包括IV族或III-V族单晶半导体，并且所述光吸收层吸收通过所述光波导传播的光信号。

    Optical phase modulation element and optical modulator using the same
    3.
    发明授权
    Optical phase modulation element and optical modulator using the same 有权
    光相位调制元件和使用其的光调制器

    公开(公告)号：US08116600B2

    公开(公告)日：2012-02-14

    申请号：US12526107

    申请日：2007-12-25

    Applicant: Daisuke Okamoto ,  Masafumi Nakada ,  Junichi Fujikata

    Inventor： Daisuke Okamoto ,  Masafumi Nakada ,  Junichi Fujikata

    IPC: G02F1/01 ,  G02F1/035

    CPC classification number: G02B6/1226 ,  B82Y20/00 ,  G02B6/12007 ,  G02F1/015 ,  G02F1/025 ,  G02F2202/20 ,  G02F2203/10 ,  G02F2203/50

    Abstract: Provided is a small-size optical phase modulation element and an optical modulator using it. The optical phase modulation element includes a Plasmon waveguide having a clad made of a metal material having a complex dielectric constant having a negative real part in the used wavelength and a core formed by a dielectric metal material having a complex dielectric constant having a positive real part in the used wavelength. The Plasmon waveguide is connected to an optical waveguide including a clad and a core both having a complex dielectric constant having a positive real part. The core of the Plasmon waveguide and the core of the optical waveguide are formed, at least partially, of the same semiconductor material. The Plasmon waveguide has a function to phase-modulate the incident light when voltage is applied.

    Abstract translation: 提供了一种小尺寸光相位调制元件和使用它的光调制器。 光学相位调制元件包括具有由金属材料制成的包层的等离子体波导，所述金属材料具有在所使用的波长中具有负实部的复介电常数和由具有正实部的复介电常数的介电金属材料形成的芯 在使用的波长。 等离子体波导连接到包括具有正实部的复介电常数的包层和芯的光波导。 至少部分地由相同的半导体材料形成等离子体波导的核心和光波导的核心。 等离子体波导具有在施加电压时对入射光进行相位调制的功能。

    OPTICAL MODULATION STRUCTURE AND OPTICAL MODULATOR
    4.
    发明申请
    OPTICAL MODULATION STRUCTURE AND OPTICAL MODULATOR 有权
    光学调制结构和光学调制器

    公开(公告)号：US20110311178A1

    公开(公告)日：2011-12-22

    申请号：US13202680

    申请日：2010-02-18

    Applicant: Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

    Inventor： Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

    IPC: G02F1/025

    CPC classification number: G02F1/025

    Abstract: The components are a lower clad layer (102), a first silicon layer (103) that is formed on the lower clad layer (102) as a single body made of silicon of a first conduction type and has a slab region (105) that is disposed at a core (104) and on both sides of the core (104) and connects to the core, a concave section (104a) that is formed in the top surface of the core (104), and a second silicon layer (109) of a second conduction type that is formed inside the concave section (104a) with an intervening dielectric layer (108) to fill the inside of the concave section (104a).

    Abstract translation: 这些部件是下包层（102），第一硅层（103），其形成在下包层（102）上，作为由第一导电类型的硅制成的单体，并具有板区域（105） 设置在芯部（104）处并且在芯部（104）的两侧并且连接到芯部，形成在芯部（104）的顶表面中的凹部（104a）和第二硅层（ 109），其形成在所述凹部（104a）的内部，并具有填充所述凹部（104a）的内部的中间介电层（108）。

    PHOTODIODE
    7.
    发明申请
    PHOTODIODE 有权
    光电

    公开(公告)号：US20100013040A1

    公开(公告)日：2010-01-21

    申请号：US12518729

    申请日：2007-12-13

    Applicant: Daisuke Okamoto ,  Junichi FuJikata ,  Kenichi Nishi ,  Keishi Ohashi

    Inventor： Daisuke Okamoto ,  Junichi FuJikata ,  Kenichi Nishi ,  Keishi Ohashi

    IPC: H01L31/0232

    CPC classification number: H01L31/1085 ,  H01L31/022408 ,  H01L31/02325

    Abstract: A photodiode includes: an upper spacer layer including a semiconductor transparent to incident light; a metal periodic structure provided on the upper spacer layer and arranged to induce surface plasmon, the metal periodic structure including first and second electrodes including portions arranged alternately on the upper spacer layer; a light absorption layer formed under the upper spacer layer and including a semiconductor having a refractive index higher than that of the upper spacer layer; and a lower spacer layer formed under the light absorption layer and having a refractive index smaller than that of the light absorption layer. Each of the first and second electrodes forms a Schottky barrier junction with the upper spacer layer.

    Abstract translation: 光电二极管包括：包括对入射光透明的半导体的上间隔层; 金属周期结构，设置在上间隔层上并且布置成诱导表面等离子体激元，金属周期结构包括第一和第二电极，包括交替设置在上间隔层上的部分; 形成在所述上间隔层下方并且具有折射率高于所述上间隔层的折射率的半导体的光吸收层; 以及形成在光吸收层下面并且具有比光吸收层的折射率小的折射率的下间隔层。 第一和第二电极中的每一个与上间隔层形成肖特基势垒结。

    Spin tunnel magnetoresistive effect film and element, magnetoresistive sensor using same, magnetic apparatus, and method for manufacturing same
    9.
    发明申请
    Spin tunnel magnetoresistive effect film and element, magnetoresistive sensor using same, magnetic apparatus, and method for manufacturing same 有权
    旋转隧道磁阻效应膜和元件，使用其的磁阻传感器，磁性装置及其制造方法

    公开(公告)号：US20050019610A1

    公开(公告)日：2005-01-27

    申请号：US10923990

    申请日：2004-08-23

    Applicant: Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori

    Inventor： Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori

    IPC: G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/12 ,  G11B5/64

    CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3268 ,  H01L43/12 ,  Y10T428/1114

    Abstract: In a spin tunnel magnetoresistive effect film in which a magnetic thin film to which an exchange bias is applied by exchange coupling via an anti-ferromagnetic thin film and a magnetic thin film that detects a magnetic field are laminated, a magnetic thin film or an anti-ferromagnetic thin film (PtMn, PdMn, NiMn) is laminated onto an underlayer (Ta, Zr, Hf), the surface roughness thereof being in the range from 0.1 to 5 Angstroms. A means used to control the surface roughness introduces into the film growing chamber oxygen, nitrogen, hydrogen, or a gas mixture thereof into a vacuum of 10−6 Torr to 10−9 Torr, reduces the substrate temperature to 0° C. or lower during film growth, or oxidizes an underlayer. The lower electrode layer material used is a film laminate of a high-permeability amorphous magnetic material and a non-magnetic metallic layer.

    Abstract translation: 在通过反铁磁性薄膜进行交换耦合而施加了交换偏压的磁性薄膜和检测磁场的磁性薄膜的自旋隧道磁阻效应薄膜中，形成磁性薄膜或抗反射膜 将铁磁性薄膜（PtMn，PdMn，NiMn）层压到底层（Ta，Zr，Hf）上，其表面粗糙度在0.1〜5埃的范围内。 用于控制表面粗糙度的手段将氧气，氮气，氢气或其气体混合物引入10 -6 Torr至10 -9 Torr的真空中，将衬底温度降至0° C.或更低，或氧化底层。 所使用的下电极层材料是高磁导率非晶磁性材料和非磁性金属层的膜层叠体。

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